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1. 发明授权

US5922223A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5922223A
公开(公告)日：1999-07-13
申请号：US749847
申请日：1996-11-15
申请人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80.degree. C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate. The apparatus includes a ceramic plate formed with a discharge coil fixing groove and mounted on the dielectric plate, and the planar spiral discharge coil is mounted on the ceramic plate.
摘要翻译：一种等离子体处理方法和装置，其中在合适的气体被引入真空容器中时进行评价，然后通过高频放电线圈电源将高频电压施加到螺旋放电线圈，同时真空容器的内部保持在足够的压力下，由此通过电介质板在真空容器内产生高频磁场，使得由于高频磁场而通过感应场加速电子，以在真空容器内产生用于处理衬底的等离子体，其特征在于，通过平面加热器将电介质板加热至80℃以上，由此沉积在电介质板上的薄膜的厚度大大降低，从而抑制灰尘产生，从而显着降低维护频率电介质板所需的。该装置包括形成有放电线圈固定槽并安装在电介质板上的陶瓷板，并且平面螺旋放电线圈安装在陶瓷板上。

2. 发明授权

US5711850A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5711850A
公开(公告)日：1998-01-27
申请号：US651606
申请日：1996-05-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路的导线，并通过连接电缆连接到高频电源。在向放电线圈施加高频电压的同时，在真空容器内产生等离子体，以处理设置在基板电极上的基板。

3. 发明授权

US5558722A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5558722A
公开(公告)日：1996-09-24
申请号：US528164
申请日：1995-09-14
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
摘要翻译：等离子体处理装置包括真空容器，基板电极，部分或全部具有多个螺旋或螺旋构造的放电线圈，高频电源以及通过连接到放电线圈的匹配电路并且经由连接电缆与高频电源连接，通过向放电线圈施加高频电压，对真空容器内产生等离子体，以处理设置在基板电极上的基板。

4. 发明授权

US07205250B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07205250B2
公开(公告)日：2007-04-17
申请号：US10801551
申请日：2004-03-17
申请人： Yoshihiro Yanagi , Ichiro Nakayama
发明人： Yoshihiro Yanagi , Ichiro Nakayama
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/306 , H01L21/3065 , H01L21/31138 , H01L21/32136
摘要： A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.
摘要翻译：等离子体处理方法和装置显示出降低等离子体处理的处理对象基板上的电荷量并防止等离子体损伤和介质击穿的优异特性。在处理对象基板被等离子体处理之前，处理对象基板的上下表面同时经受主要由惰性气体组成的气体中的弱等离子体，这使得可以中和加工对象基板上的电荷，物体衬底。惰性气体是Ar，He，N 2 H 2，H 2 2和气化的H 2 O 2气体中的任何一种，或这些气体的混合气体气体。

5. 发明申请

US20050037629A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050037629A1
公开(公告)日：2005-02-17
申请号：US10801551
申请日：2004-03-17
申请人： Yoshihiro Yanagi , Ichiro Nakayama
发明人： Yoshihiro Yanagi , Ichiro Nakayama
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/469
CPC分类号： H01L21/306 , H01L21/3065 , H01L21/31138 , H01L21/32136
摘要： Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of charges electrified on a plasma-processed processing-object substrate and preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.
摘要翻译：等离子体处理方法和装置显示了降低在等离子体处理的处理对象基板上带电的电荷量并防止等离子体损伤和介质击穿的优异特性。在处理对象基板被等离子体处理之前，处理对象基板的上下表面同时经受主要由惰性气体组成的气体中的弱等离子体，这使得可以中和加工对象基板上的电荷，物体衬底。惰性气体是Ar，He，N 2，H 2和蒸发的H 2 O气体中的任何一种或这些气体的混合气体。

6. 发明授权

US5888413A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5888413A
公开(公告)日：1999-03-30
申请号：US656851
申请日：1996-05-30
申请人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： C23C16/507 , H01J37/32 , C23F1/02 , C23F1/08
CPC分类号： H01J37/321 , C23C16/507
摘要： In a plasma processing method, a substrate is processed by placing the substrate on an electrode in a vacuum chamber, introducing a gas into the vacuum chamber while discharging gas from inside vacuum chamber, applying a high frequency voltage to a spiral discharge coil while keeping the vacuum chamber internally at a pressure to generate a plasma inside the vacuum chamber. At least one of the control parameters of gas type, gas flow rate, pressure, magnitudes of high frequency powers applied to the coil and the electrode, and their high frequency power frequencies is varied while the substrate is processed. The method includes a step of allowing a plasma density in-plane distribution to be controlled in accordance with the timing of varying any of the control parameters.
摘要翻译：在等离子体处理方法中，通过将基板放置在真空室中的电极上，将真空室内的气体导入真空室，同时从真空室内排出气体，同时向螺旋放电线圈施加高频电压，同时保持真空室内部处于压力下，以在真空室内产生等离子体。在处理衬底时，气体类型，气体流量，压力，施加到线圈和电极的高频功率的大小及其高频功率频率的控制参数中的至少一个是变化的。该方法包括根据改变任何控制参数的定时来控制等离子体密度面内分布的步骤。

7. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

8. 发明授权

US08652953B2 Plasma doping method with gate shutter 失效
标题翻译：等离子体掺杂法与栅极快门
公开(公告)号：US08652953B2
公开(公告)日：2014-02-18
申请号：US13560648
申请日：2012-07-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。提供了用于向样品电极提供高频电力的高频电源。通过驱动闸门并覆盖通过门来增强处理的均匀性。

9. 发明授权

US07759254B2 Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device 有权
标题翻译：形成杂质导入层的方法，用于清洗待加工物体的方法，用于引入杂质的方法及其制造方法
公开(公告)号：US07759254B2
公开(公告)日：2010-07-20
申请号：US10569464
申请日：2004-08-25
申请人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/2236
摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.
摘要翻译：公开了一种形成杂质导入层的方法。该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行固体基质。

10. 发明申请

US20100098837A1 PLASMA DOPING METHOD AND APPARATUS 失效
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20100098837A1
公开(公告)日：2010-04-22
申请号：US12648142
申请日：2009-12-28
申请人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/52 , H05H1/24 , C23C16/448
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

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