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1. 发明申请

US20110215340A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

2. 发明申请

US20090022193A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

3. 发明授权

US08030677B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08030677B2
公开(公告)日：2011-10-04
申请号：US12375118
申请日：2007-07-13
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

4. 发明授权

US07852891B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07852891B2
公开(公告)日：2010-12-14
申请号：US12258881
申请日：2008-10-27
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

5. 发明授权

US07501667B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07501667B2
公开(公告)日：2009-03-10
申请号：US11084526
申请日：2005-03-21
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

6. 发明授权

US07816696B2 Nitride semiconductor device and method for manufacturing same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07816696B2
公开(公告)日：2010-10-19
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L29/267 , H01L21/332
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

7. 发明授权

US07704860B2 Nitride-based semiconductor device and method for fabricating the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US07704860B2
公开(公告)日：2010-04-27
申请号：US10597575
申请日：2005-11-15
申请人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01S5/32341 , H01S2304/12
摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.
摘要翻译：根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区垂直生长区域横向生长。在箭头A所示的方向上测量的垂直生长区域的各自尺寸的总和＆Sgr X以及在相同方向上测量的横向生长区域的各自尺寸的总和＆Sgr; Y满足不等式＆lt; Sgr; X /＆S; Y> 1.0。

8. 发明申请

US20080272462A1 Nitride-Based Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20080272462A1
公开(公告)日：2008-11-06
申请号：US10597575
申请日：2005-11-15
申请人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L21/20 , H01L29/201
CPC分类号： H01S5/22 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01S5/32341 , H01S2304/12
摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.
摘要翻译：根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区垂直生长区域横向生长。在箭头A所指的方向上测量的垂直生长区域的各自尺寸的大小和在相同方向上测量的横向生长区域的各自尺寸的总和SigmaY的和ΣX满足SigmaX / SigmaY> 1.0的不等式。

9. 发明申请

US20070217460A1 NITRIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070217460A1
公开(公告)日：2007-09-20
申请号：US11568336
申请日：2005-04-20
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
IPC分类号： H01S5/30 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/0075 , H01S5/2201 , H01S5/305 , H01S5/3216 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1: x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.
摘要翻译：根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 选择性地生长Al x N晶体的步骤（C）（0≤x，y，z <= 1：x + y + z = 1）104，在多个条纹脊的上表面上，含有N，N，N，第一浓度的n型杂质; 和步骤（D），生长Al 2 O 3 / （0 <= x'，y'，z'<= 1：x'）。 + y'+ z'= 1）106在Al x N y晶体104中，Al x x < 包含低于第一浓度的第二浓度的n型杂质，并且连接每两个相邻的Al x x的子晶体106 在具有Al x Si 2 O 3的N z晶体104中，Ga 3+ 在＆lt; SUB＆gt;＆lt; SUB＆gt;＆lt; / SUB＆gt;＆lt;＆lt;＆lt; 形成一个氮化物半导体层120。

10. 发明授权

US07056756B2 Nitride semiconductor laser device and fabricating method thereof 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07056756B2
公开(公告)日：2006-06-06
申请号：US10611851
申请日：2003-07-03
申请人： Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/0425
摘要： A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109) that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer (102) and the outermost surface of the p-type nitride semiconductor layer (108); a step to flatten the surface of the insulating film (109); and a step to form an n-type electrode (111) and a p-type electrode (110) electrically connected to the n-type nitride semiconductor layer (102) and the p-type nitride semiconductor layer (108), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.
摘要翻译：一种用于制造氮化物半导体激光器件的方法，包括：暴露n型氮化物半导体层（102）和p型氮化物半导体层（108）的表面的步骤; 覆盖多层半导体表面的步骤; 具有大于n型氮化物半导体层（102）的露出表面与p型氮化物半导体层（108）的最外表面之间的电平差的绝缘膜（109）; 平坦化绝缘膜（109）的表面的步骤; 以及分别形成与n型氮化物半导体层（102）和p型氮化物半导体层（108）电连接的n型电极（111）和p型电极（110）的步骤。该方法可以获得高可靠性并且具有优异的散热性能的氮化物半导体激光器件。

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