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    • 3. 发明申请
    • METHOD FOR DETECTING DEFECTS THAT EXHIBIT REPETITIVE PATTERNS
    • 用于检测展示重复图案的缺陷的方法
    • US20060097729A1
    • 2006-05-11
    • US10985313
    • 2004-11-09
    • Diane BrownWolfgang Goubau
    • Diane BrownWolfgang Goubau
    • G01R31/08
    • G01R31/2831
    • A method for detecting defects in devices that are fabricated in repetitive patterns upon the surface of a substrate by the, repetitive utilization of masks and similar devices. A mask flaw will become manifest in a series of defective devices as the mask is successively utilized. The detection of repetitive defects is undertaken by determining the electrical resistance of devices in a group, such as a column, fabricated upon the wafer surface, where the repetitive defect will occur multiple times. The mean electrical resistance of the group is determined and a percent deviation of each device from the mean is then determined. The percent deviation of all of the devices in the group are multiplied together to create a multiplied percent deviation number and the multiplied percent deviation number is then compared with a figure of merit value to make a determination of whether defective devices exist within the group.
    • 一种用于通过重复使用掩模和类似装置来检测在衬底表面上以重复图案制造的器件中的缺陷的方法。 当连续使用掩模时,掩模缺陷将在一系列有缺陷的装置中变得显现。 通过确定在晶片表面上制造的诸如柱的组中的器件的电阻,其中重复缺陷将发生多次,来进行重复缺陷的检测。 确定组的平均电阻,然后确定每个装置与平均值的百分比偏差。 将组中所有设备的百分比偏差相乘以产生相乘百分比偏差数,然后将乘法百分比偏差数与品质因数值进行比较,以确定组内是否存在缺陷设备。
    • 6. 发明授权
    • Method for detecting defects that exhibit repetitive patterns
    • 检测显示重复图案的缺陷的方法
    • US07095239B2
    • 2006-08-22
    • US10985313
    • 2004-11-09
    • Diane L. BrownWolfgang Goubau
    • Diane L. BrownWolfgang Goubau
    • G01R31/08G01R31/26
    • G01R31/2831
    • A method for detecting defects in devices that are fabricated in repetitive patterns upon the surface of a substrate by the, repetitive utilization of masks and similar devices. A mask flaw will become manifest in a series of defective devices as the mask is successively utilized. The detection of repetitive defects is undertaken by determining the electrical resistance of devices in a group, such as a column, fabricated upon the wafer surface, where the repetitive defect will occur multiple times. The mean electrical resistance of the group is determined and a percent deviation of each device from the mean is then determined. The percent deviation of all of the devices in the group are multiplied together to create a multiplied percent deviation number and the multiplied percent deviation number is then compared with a figure of merit value to make a determination of whether defective devices exist within the group.
    • 一种用于通过重复使用掩模和类似装置来检测在衬底表面上以重复图案制造的器件中的缺陷的方法。 当连续使用掩模时,掩模缺陷将在一系列有缺陷的装置中变得显现。 通过确定在晶片表面上制造的诸如柱的组中的器件的电阻,其中重复缺陷将发生多次,来进行重复缺陷的检测。 确定组的平均电阻,然后确定每个装置与平均值的百分比偏差。 将组中所有设备的百分比偏差相乘以产生相乘百分比偏差数,然后将乘法百分比偏差数与品质因数值进行比较,以确定组内是否存在缺陷设备。