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1. 发明申请

US20200227635A1 Diffusive Memristor and Device for Synaptic Emulator 审中-公开
公开(公告)号：US20200227635A1
公开(公告)日：2020-07-16
申请号：US16142310
申请日：2018-09-26
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Mark McLean , Qing Wu , Mark Barnell
IPC分类号： H01L45/00 , H01L27/24 , G06N3/063
摘要： A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.

2. 发明公开

US20240046083A1 MEMRISTIVE CELLULAR NEURAL NETWORK 审中-公开
公开(公告)号：US20240046083A1
公开(公告)日：2024-02-08
申请号：US18358139
申请日：2023-07-25
申请人： University of Massachusetts
发明人： Qiangfei Xia , Vigneshwar Ravichandran , Tina Maurer
IPC分类号： G06N3/065
CPC分类号： G06N3/065
摘要： A system includes a sensor, a plurality of cells, and a processor. The sensor includes a plurality of transducers arranged on a planar surface and includes a first transducer and a second transducer. The first transducer is configured to produce an analog output signal corresponding to a detected input signal. The cells are arranged in a network and include a first and a second cell and are disposed proximate the sensor in a three-dimensional stacking fashion. The first transducer and the second transducer are electrically coupled to the first cell and the second cell in one-to-one relation. The first cell includes a plurality of inputs and a first cell output. Each input is coupled to an output of a corresponding plurality of neighboring cells. The first cell includes a first memristor and a bridge circuit configured to receive the analog output signal and provide a current corresponding to the detected input signal in a pixel-parallel fashion. The processor is coupled to the network and generates a parameter associated with a weight for each cell of the plurality of cells.

3. 发明申请

US20190244088A1 Artificial Neurons Using Diffusive Memristor 审中-公开
公开(公告)号：US20190244088A1
公开(公告)日：2019-08-08
申请号：US16270848
申请日：2019-02-08
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Mark McLean , Qing Wu
IPC分类号： G06N3/063 , G06N3/04 , G06N3/06 , G06N3/08
CPC分类号： G06N3/063 , G06N3/0454 , G06N3/061 , G06N3/08
摘要： A diffusive memristor device and an electronic device for emulating a biological neuron is disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises an oxide doped with a metal.

4. 发明申请

US20160351256A1 RESISTIVE MEMORY 有权
标题翻译：电阻记忆
公开(公告)号：US20160351256A1
公开(公告)日：2016-12-01
申请号：US14563375
申请日：2014-12-08
申请人： University of Massachusetts
发明人： Qiangfei Xia
IPC分类号： G11C13/00 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , G11C13/0002 , G11C13/0014 , G11C13/0023 , G11C13/0069 , G11C2213/33 , G11C2213/52 , G11C2213/77 , H01L27/2409 , H01L45/1233 , H01L45/1273 , H01L45/145 , H01L45/1675
摘要： A memory device includes one or more first semiconductor ridges formed on a first semiconductor wafer. The first semiconductor ridges are configured to be first electrodes. The memory device also includes one or more second semiconductor ridges formed on a second semiconductor wafer. The second semiconductor ridges are configured to be second electrodes and are placed orthogonally on top of the first semiconductor ridges forming a crossbar structure, with sharp edges of the first semiconductor ridges coupled to sharp edges of the second semiconductor ridges. Each area of coupling of a first semiconductor ridge and a second semiconductor ridge is configured to be a memory cell. In addition, the memory device includes a compound layer covering the sharp edges of at least one of the first semiconductor ridges or the second semiconductor ridges. The compound layer is configured to be a switching layer.
摘要翻译：存储器件包括形成在第一半导体晶片上的一个或多个第一半导体脊。第一半导体脊被配置为第一电极。存储器件还包括形成在第二半导体晶片上的一个或多个第二半导体脊。第二半导体脊被配置为第二电极，并且正交地放置在形成横梁结构的第一半导体脊的顶部上，其中第一半导体脊的尖锐边缘耦合到第二半导体脊的尖锐边缘。第一半导体脊和第二半导体脊的耦合的每个区域被配置为存储单元。此外，存储器件包括覆盖第一半导体脊或第二半导体脊中的至少一个的尖锐边缘的复合层。复合层被配置为开关层。

5. 发明申请

US20210382696A1 TRUE RANDOM NUMBER GENERATOR (TRNG) CIRCUIT USING A DIFFUSIVE MEMRISTOR 有权
公开(公告)号：US20210382696A1
公开(公告)日：2021-12-09
申请号：US17407587
申请日：2021-08-20
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Hao Jiang
IPC分类号： G06F7/58 , H01L45/00 , H03K3/84
摘要： A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.

6. 发明申请

US20190303744A1 CAPACITIVE ARTIFICIAL NEURAL NETWORKS 审中-公开
公开(公告)号：US20190303744A1
公开(公告)日：2019-10-03
申请号：US16371736
申请日：2019-04-01
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Zhongrui Wang , Qing Wu , Mark R. McLean
IPC分类号： G06N3/04 , H01L45/00 , H01L49/02 , H01L29/788 , H01L29/51 , H01L29/423 , H01L27/092 , H01L29/49
摘要： In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.

7. 发明申请

US20190303104A1 TRUE RANDOM NUMBER GENERATOR (TRNG) CIRCUIT USING A DIFFUSIVE MEMRISTOR 审中-公开
公开(公告)号：US20190303104A1
公开(公告)日：2019-10-03
申请号：US16367623
申请日：2019-03-28
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Hao Jiang
IPC分类号： G06F7/58 , H01L45/00 , H03K3/84
摘要： A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.

8. 发明授权

US10740672B2 Capacitative artificial neural networks 有权
公开(公告)号：US10740672B2
公开(公告)日：2020-08-11
申请号：US16371736
申请日：2019-04-01
申请人： University of Massachusetts
发明人： Jianhua Yang , Qiangfei Xia , Zhongrui Wang , Qing Wu , Mark R. McLean
IPC分类号： G06N3/04 , H01L45/00 , H01L49/02 , H01L29/51 , H01L29/423 , H01L27/092 , H01L29/49 , H01L29/788
摘要： In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.

9. 发明授权

US10580679B2 Method of transfer printing and articles manufactured therefrom 有权
公开(公告)号：US10580679B2
公开(公告)日：2020-03-03
申请号：US15762262
申请日：2016-09-22
申请人： THE UNIVERSITY OF MASSACHUSETTS
发明人： Qiangfei Xia , Peng Lin
IPC分类号： H01L21/683 , G06F7/00 , G03F7/34 , B81C1/00 , G03F7/40 , G03F7/20 , B82Y40/00 , H01L23/58 , C23C14/34 , C23C14/04 , C23C14/08 , G03F7/00
摘要： Disclosed herein is a method comprising disposing on a first substrate a two-dimensional exfoliatable material; patterning an exfoliatable material using a photoresist in a manner such that a portion of the photoresist remains in contact with the two-dimensional exfoliatable material after the patterning; disposing a polymer layer on the two-dimensional exfoliatable material to form a printing block; contacting a substrate with the printing block; and removing the polymer layer and the photoresist from the printing block to leave behind the patterned exfoliatable material on the substrate.

10. 发明申请

US20180287058A1 MEMRISTOR DEVICE 审中-公开
公开(公告)号：US20180287058A1
公开(公告)日：2018-10-04
申请号：US15471878
申请日：2017-03-28
申请人： University of Massachusetts
发明人： Qiangfei Xia , Hao Jiang , Jianhua Yang
IPC分类号： H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/146 , G11C11/5685 , G11C13/0007 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C2213/15 , G11C2213/52 , H01L45/08 , H01L45/1233 , H01L45/1253
摘要： A resistance switching device is disclosed and is fabricated to create a memristor device. The memristor device includes a substrate and a platinum bottom electrode formed on the substrate. A tantalum top electrode is formed opposite the bottom electrode, and an electrical insulator layer is disposed between the top electrode and the bottom electrode, wherein the electrical insulator layer comprises hafnium oxide. In an alternate implementation, a titanium nitride layer is deposited on the substrate, which then allows a reduced thickness platinum bottom electrode layer to be deposited on the titanium nitride layer.

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