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1. 发明专利

JP2014038919A Diode, power transmission system, and connection connector for power source line 有权
标题翻译：二极管，电力传输系统和电源线的连接连接器
公开(公告)号：JP2014038919A
公开(公告)日：2014-02-27
申请号：JP2012179770
申请日：2012-08-14
申请人： Univ Of Tokushima , 国立大学法人徳島大学
发明人： ONO YASUO , GO KINPEI
IPC分类号： H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a diode such as a Schottky barrier diode that allows achieving a reduction in on-resistance even in having a lateral structure in which an anode electrode and a cathod electrode exist on the same plane, achieving high withstand voltage without using a field-plate structure, and is excellent in frequency characteristics.SOLUTION: A diode has an anode electrode and a cathod electrode provided at one sides of semiconductor layers 12 and 13. The anode electrode is divided into a plurality of anode electrodes, the divided anode electrode 14 being mutually connected with metal wiring 16, being surrounded by the cathod electrode 15, and having a shape in which the aspect ratio is 5 or less. Typically, the cathod electrode 15 surrounding each divided anode electrode 14 is integrally formed, and each divided anode electrode 14 has a dot shape.
摘要翻译：要解决的问题：为了提供诸如肖特基势垒二极管的二极管，即使在同一平面上存在阳极电极和阴极电极的横向结构，也可以实现导通电阻的降低，实现高耐压而没有使用场板结构，频率特性优异。解决方案：二极管具有设置在半导体层12和13的一侧的阳极电极和阴极电极。阳极电极分为多个阳极电极，分隔的阳极电极14与金属布线16相互连接，被阴极电极15包围，并且具有纵横比为5以下的形状。通常，围绕每个分开的阳极电极14的阴极电极15一体形成，并且每个分开的阳极电极14具有点状。

2. 发明专利

JP2007311475A Semiconductor photodetector 有权
标题翻译： SEMICONDUCTOR PHOTODETEOROR
公开(公告)号：JP2007311475A
公开(公告)日：2007-11-29
申请号：JP2006137713
申请日：2006-05-17
申请人： Pawdec:Kk , Univ Of Tokushima , 国立大学法人徳島大学 , 株式会社パウデック
发明人： ONO YASUO , KAWAI HIROHARU , OKADA MASAYA , GO KINPEI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor photodetector that detects only ultraviolet light or light of a shorter wavelength with extremely high photosensitivity, and also, can be easily manufactured without using a p-type layer. SOLUTION: The semiconductor photodetector is composed by providing a second semiconductor layer 3, whose band gap is larger than that of a first semiconductor layer 2 on the first semiconductor layer 2; a third semiconductor layer 4 whose band gap is smaller than that of the second semiconductor layer 3 and larger than photon energy corresponding to the shortest wavelength of visible light, and which forms a type I hetero-junction together with the second semiconductor layer 3 on the second semiconductor layer 3; a first electrode 5 on the first semiconductor layer 2; and a second electrode 6 on the third semiconductor layer 4. Electron holes, which are generated by optical absorption performed by the third semiconductor layer 4 during operation, are accumulated on the interface between the third semiconductor layer 4 and the second semiconductor layer 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体光电检测器，其仅检测紫外线或具有极高光敏性的较短波长的光，并且也可以容易地制造而不使用p型层。解决方案：半导体光电探测器是通过提供第二半导体层3构成的，该第二半导体层3的带隙大于第一半导体层2上的第一半导体层2的带隙; 第三半导体层4的带隙比第二半导体层3的带隙小，并且大于与可见光的最短波长相对应的光子能量，并且与第二半导体层3一起形成I型异质结第二半导体层3; 第一半导体层2上的第一电极5; 以及第三半导体层4上的第二电极6.在第三半导体层4和第二半导体层3之间的界面上累积由工作时由第三半导体层4进行的光吸收而产生的电子空穴。 P>版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2014023069A Microwave rectifier circuit, and rectenna circuit and non-contact connector including the same 有权
标题翻译：微波整流器电路，以及包括其的接收电路和非接触连接器
公开(公告)号：JP2014023069A
公开(公告)日：2014-02-03
申请号：JP2012162115
申请日：2012-07-20
申请人： Univ Of Tokushima , 国立大学法人徳島大学
发明人： ONO YASUO
IPC分类号： H01P5/02 , H01P1/212 , H04B1/18
摘要： PROBLEM TO BE SOLVED: To achieve a microwave rectifier circuit eliminating reflection of not only a higher harmonic wave but a fundamental wave to have furthermore excellent high conversion efficiency, and a rectenna circuit including the microwave rectifier circuit.SOLUTION: A microwave rectifier circuit is provided with: a higher harmonic wave filter part 20 blocking a reflection wave of a higher harmonic wave, on an input side of a diode part 30 including a rectifier diode D; and an impedance matching part 10 reducing the reflection of the fundamental wave in an input wave reflected at the diode part 30 to substantially zero by a transmission line and a reactance element or a stab connected to the transmission line, on a further input side of the higher harmonic wave filter part 20.
摘要翻译：要解决的问题：为了实现微波整流电路，消除不仅高次谐波而且基波的反射，而且具有进一步优异的高转换效率，以及包括微波整流电路的整流天线电路。解决方案：提供微波整流电路具有：在包括整流二极管D的二极管部分30的输入侧上阻挡高次谐波的反射波的高次谐波滤波器部分20; 以及阻抗匹配部10，其将在二极管部30反射的输入波中的基波的反射通过传输线和连接到传输线的电抗元件或连接线传播到基本上为零，在另一输入侧高次谐波滤波器20。

4. 发明专利

JP2009099613A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009099613A
公开(公告)日：2009-05-07
申请号：JP2007267047
申请日：2007-10-12
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , Univ Of Tokushima , トヨタ自動車株式会社 , 国立大学法人徳島大学 , 株式会社豊田中央研究所
发明人： SUGIMOTO MASAHIRO , UEDA HIROYUKI , UESUGI TSUTOMU , KACHI TORU , ONO YASUO , GO KINPEI , HU CHENGYU
IPC分类号： H01L21/28 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form an ohmic electrode by repairing damage by etching.
SOLUTION: A method of manufacturing a semiconductor device comprises: a surface layer forming step of forming a heterogeneous surface layer on a surface of a p-type nitride semiconductor; an etching step of exposing the surface of the p-type nitride semiconductor by removing part of the surface layer; an annealing step of subjecting the p-type nitride semiconductor after the etching step to a heating process; and an electrode forming step of forming electrodes on the surface of the p-type nitride semiconductor after the annealing step. The annealing step is characterized by being executed in a nitrogen or oxygen atmosphere at 700-1,200°C.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过蚀刻修复损伤来形成欧姆电极。解决方案：制造半导体器件的方法包括：在p型氮化物半导体的表面上形成非均匀表面层的表面层形成步骤; 蚀刻步骤，通过去除表面层的一部分来暴露p型氮化物半导体的表面; 在蚀刻步骤之后对p型氮化物半导体进行加热处理的退火步骤; 以及在退火步骤之后在p型氮化物半导体的表面上形成电极的电极形成步骤。退火步骤的特征在于在氮气或氧气氛中在700-1200℃下进行。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009246810A High-frequency signal transmission apparatus 有权
标题翻译：高频信号传输装置
公开(公告)号：JP2009246810A
公开(公告)日：2009-10-22
申请号：JP2008092956
申请日：2008-03-31
申请人： Univ Of Tokushima , 国立大学法人徳島大学
发明人： ONO YASUO , OKUYAMA YUKA
IPC分类号： H01P1/203
摘要： PROBLEM TO BE SOLVED: To achieve an apparatus capable of transmitting a direct current power or a low-frequency signal and efficiently transmitting a high-frequency signal between resonators. SOLUTION: In a high-frequency signal apparatus 1, an open-ring-shaped resonator 2 and an output line 3 connecting to the resonator 2 for performing input/output of a high-frequency signal to/from the resonator are formed on different planes. The high-frequency signal apparatus 1 carries out electromagnetic coupling of the resonators 2 formed on both planes to transmit a high-frequency signal. The high-frequency signal has a wavelength which serves as a standing wave in the resonator 2. In at least one resonator 2, a direct current line 5 is connected to a node of the standing wave so as to input a low-frequency signal or a direct current power. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：实现能够发送直流电力或低频信号并且有效地在谐振器之间传输高频信号的装置。解决方案：在高频信号装置1中，形成连接到谐振器2的开环形谐振器2和输出线3，用于向谐振器输入/输出高频信号在不同的飞机上。高频信号装置1执行形成在两个平面上的谐振器2的电磁耦合，以发送高频信号。高频信号具有在谐振器2中作为驻波的波长。在至少一个谐振器2中，直流线5连接到驻波的节点，以便输入低频信号或直流电源。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009038070A Nitride semiconductor device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2009038070A
公开(公告)日：2009-02-19
申请号：JP2007198552
申请日：2007-07-31
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , Univ Of Tokushima , トヨタ自動車株式会社 , 国立大学法人徳島大学 , 株式会社豊田中央研究所
发明人： SUGIMOTO MASAHIRO , UEDA HIROYUKI , UESUGI TSUTOMU , KACHI TORU , ONO YASUO , GO KINPEI , HU CHENGYU
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40 , H01L33/44 , H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor device comprising a p-type nitride semiconductor layer, an insulating film covering the nitride semiconductor layer and formed with a through hole, and a metal film in contact with the nitride semiconductor layer exposed at the bottom face of the through hole, which method being able to actualize good ohmic characteristics.
SOLUTION: A silicon oxide film 4 is formed on the surface of a p-type gallium nitride layer 2. Then, part of the silicon oxide film 4 is etched, and a through hole 6 reaching the surface of the gallium nitride layer 2 is formed. Then, silicon 8 adhered to the surface of the gallium nitride layer 2 is removed. Then, a metal film in contact with the surface of the gallium nitride layer 2 is formed. Then, the gallium nitride layer 2, the silicon oxide film 4, and the metal film are heat-treated. The process for removing the silicon 8 and the process for forming the metal film are carried out under atmosphere containing no silicon.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种氮化物半导体器件的制造方法，该氮化物半导体器件包括p型氮化物半导体层，覆盖氮化物半导体层并形成有通孔的绝缘膜，以及与氮化物半导体层暴露在通孔的底面，该方法能够实现良好的欧姆特性。解决方案：在p型氮化镓层2的表面上形成氧化硅膜4.然后，蚀刻氧化硅膜4的一部分，并且到达氮化镓层表面的通孔6 形成2。然后，去除附着在氮化镓层2的表面上的硅8。然后，形成与氮化镓层2的表面接触的金属膜。然后，对氮化镓层2，氧化硅膜4和金属膜进行热处理。去除硅8的工艺和形成金属膜的工艺在不含硅的气氛下进行。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008067012A High frequency signal transmission device 有权
标题翻译：高频信号传输装置
公开(公告)号：JP2008067012A
公开(公告)日：2008-03-21
申请号：JP2006242098
申请日：2006-09-06
申请人： Ryukoku Univ , Univ Of Tokushima , 国立大学法人徳島大学 , 学校法人龍谷大学
发明人： ONO YASUO , AWAI IKUO , SATO HIROAKI , SUGA RYOTA
IPC分类号： H01P5/02 , H01L23/12 , H01P1/203
摘要： PROBLEM TO BE SOLVED: To provide a high frequency signal transmission device capable of efficiently transmitting a high frequency signal between circuits on different planes. SOLUTION: In a high frequency signal transmission device 1 being a device for transmitting a high frequency signal between circuits on different planes P-a and P-b, a resonator 2 having a structure having a part of a closed curve line opened or a spiral structure and an input/output line 3 which is connected to the resonator 2 and inputs/outputs the high frequency signal to/from the resonator 2 are formed on each plane, and the high frequency signal is transmitted by electromagnetic coupling between resonators 2 formed on both planes. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够在不同平面上的电路之间有效地发送高频信号的高频信号传输装置。解决方案：在作为用于在不同平面Pa和Pb上的电路之间传输高频信号的装置的高频信号传输装置1中，具有打开的一部分闭合曲线的结构的谐振器2或螺旋结构并且在每个平面上形成连接到谐振器2并且向谐振器2输入/输出高频信号的输入/输出线3，并且通过在两者上形成的谐振器2之间的电磁耦合来传输高频信号飞机。版权所有（C）2008，JPO＆INPIT

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