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    • 1. 发明授权
    • Apparatus and method for planar end-point detection during
chemical-mechanical polishing
    • 化学机械抛光过程中平面端点检测的装置和方法
    • US5738562A
    • 1998-04-14
    • US590541
    • 1996-01-24
    • Trung Tri DoanGurtej Singh SandhuMalcolm K. Grief
    • Trung Tri DoanGurtej Singh SandhuMalcolm K. Grief
    • B24B37/013B24B49/12B24B49/16
    • B24B37/013B24B49/12
    • A chemical-mechanical polishing apparatus includes a slurry-wetted polishing pad attached to a substantially planar surface of a platen. A wafer carrier is positioned in close proximity to the platen, and it has a substantially planar surface to which one side of a semiconductor wafer is removably attachable so that an opposing side of the semiconductor wafer is disposed against the polishing pad. An actuator imparts a translational motion to the platen so that the polishing pad moves relative to and in polishing contact with the semiconductor wafer. A sensor detects a change in the imparted translational motion corresponding to a change in the coefficient of friction between the polishing pad and the opposing side of the semiconductor wafer indicative of a planar end point on the opposing side of the semiconductor wafer. The sensor preferably includes a laser and a laser detector using a laser reflection or laser interferometric method to detect the change in the imparted translational motion. Also, the apparatus preferably includes a controller coupled to the sensor and the actuator to adjust the actuator in response to the sensor detecting a change in the imparted translational motion.
    • 化学机械抛光装置包括附着在压板的基本平坦的表面上的浆液润湿的抛光垫。 晶片载体被定位成靠近压板,并且其具有基本平坦的表面,半导体晶片的一侧可移除地附接到该表面,使得半导体晶片的相对侧抵靠抛光垫设置。 致动器向平台施加平移运动,使得抛光垫相对于半导体晶片相对于其和与半导体晶片进行抛光接触而移动。 传感器检测对应于抛光垫和半导体晶片的相反侧之间的摩擦系数的变化的赋予的平移运动的变化,其指示半导体晶片的相对侧上的平面终点。 传感器优选地包括激光器和使用激光反射或激光干涉法的激光检测器来检测所赋予的平移运动的变化。 此外,该装置优选地包括耦合到传感器和致动器的控制器,以响应于传感器来检测致动器的变化来调节致动器。
    • 2. 发明授权
    • Electrical contact with diffusion barrier
    • 与扩散屏障电接触
    • US5136362A
    • 1992-08-04
    • US618490
    • 1990-11-27
    • Malcolm K. GriefTrung Doan
    • Malcolm K. GriefTrung Doan
    • H01L21/768H01L23/485H01L29/45
    • H01L21/76856H01L21/76843H01L21/76846H01L21/76855H01L23/485H01L29/45H01L2924/0002
    • A device is provided by forming a diffusion barrier at the interface between a metalized contact and the surface of a semiconductor substrate. A three-layer sandwich is formed over the contact region and then annealed in free nitrogen. The sandwich is made of a titanium nitride layer interposed between layers of titanium. During the anneal, material from the titanium layer adjacent to the substrate migrates thereinto to produce a highly conductive diffusion region of titanium silicide. Concurrently during the anneal the other layer of titanium, which is exposed to the nitrogen atmosphere, is converted into a backing layer of titanium nitride which enhances the barrier effect of the titanium nitride layer at the center of the sandwich structure. The conversion of titanium to titanium nitride causes a physical expansion in the layer involved. This serves to enhance the thickness of the barrier layer at all locations, but of particular significance at the corners of the contact well. A diffusion region of controlled depth and the deposition of minimal amounts of titanium remote from the contact side itself are advantageous results of the disclosed process.
    • 通过在金属化接触和半导体衬底的表面之间的界面处形成扩散阻挡层来提供器件。 在接触区域上形成三层夹层,然后在游离氮中退火。 夹层由夹在钛层之间的氮化钛层制成。 在退火期间,与邻近衬底的钛层的材料迁移到其中以产生钛硅化物的高导电性扩散区。 同时在退火过程中,暴露于氮气氛下的另一层钛转化为氮化钛背衬层,这增强了氮化钛层在夹层结构中心的阻挡作用。 钛转化为氮化钛会导致所涉层的物理膨胀。 这用于增强所有位置处的阻挡层的厚度,但在接触孔的角部具有特别的意义。 受控深度的扩散区域和远离接触侧本身的最小量钛的沉积是所公开的方法的有利结果。
    • 8. 发明授权
    • Method of forming a configuration of interconnections on a semiconductor
device having a high integration density
    • 在具有高积分密度的半导体器件上形成互连结构的方法
    • US4936950A
    • 1990-06-26
    • US339029
    • 1989-04-14
    • Trung T. DoanLeendert De BruinMalcolm K. GriefHarald Godon
    • Trung T. DoanLeendert De BruinMalcolm K. GriefHarald Godon
    • H01L21/3205H01L21/768H01L23/52
    • H01L21/76877
    • A method of the kind consisting in that a contact is obtained with an active zone (11) carried by a semiconductor substrate (10) by means of conductive contact studs (18a) located in the contact openings (16c) of an isolating layer (12) and in that then a metallic configuration of interconnections (22) is formed establishing the conductive connection with the conductive contact studs (18a). A separation layer (13) is provided between the isolating layer (12) and the conductive layer (18), which can be eliminated selectively with respect to the isolating layer (12). Thus, the isolating layer (12) retains its original flatness and the conductive contact studs (18a) have an upper level (20) exceeding slightly the level (21) of the isolating layer (12), thus favoring the contact between these contact studs (18a) and the metallic configuration of interconnections (22). Application in microcircuits having a high integration density.
    • 一种方法,其特征在于,通过位于隔离层(12)的接触开口(16c)中的导电接触柱(18a),通过由半导体衬底(10)承载的有源区(11)获得接触, ),然后形成互连(22)的金属构造,以与导电触头柱(18a)建立导电连接。 隔离层(13)设置在隔离层(12)和导电层(18)之间,可以相对于隔离层(12)选择性去除。 因此,绝缘层(12)保持其原始平坦度,并且导电触头柱(18a)具有超过隔离层(12)的水平面(21)的上部水平(20),因此有利于这些触头柱之间的接触 (18a)和互连(22)的金属构造。 应用于具有高集成密度的微电路。