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1. 发明申请

US20120171785A1 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120171785A1
公开(公告)日：2012-07-05
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

2. 发明授权

US08652854B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08652854B2
公开(公告)日：2014-02-18
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

3. 发明授权

US08153448B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08153448B2
公开(公告)日：2012-04-10
申请号：US12453451
申请日：2009-05-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

4. 发明授权

US07547933B2 Semiconductor device and manufacturing method of a semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07547933B2
公开(公告)日：2009-06-16
申请号：US10695643
申请日：2003-10-29
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

5. 发明授权

US07176132B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07176132B2
公开(公告)日：2007-02-13
申请号：US10695642
申请日：2003-10-29
申请人： Naoya Sashida , Katsuyoshi Matsuura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Naoya Sashida , Katsuyoshi Matsuura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , H01L21/3144 , H01L27/0629
摘要： There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.
摘要翻译：提供了在半导体衬底上形成绝缘膜的步骤，激发具有其中键合有氢和氮的分子结构的气体的等离子体并随后将等离子体照射到绝缘膜上的步骤，形成在绝缘膜上具有自取向特性的物质形成的自取向层，以及在自取向层上形成具有自取向特性的导电性物质的第一导电膜的工序。

6. 发明授权

US07029984B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07029984B2
公开(公告)日：2006-04-18
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译：公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。将第一膜沉积工艺的膜沉积温度设定为至少600℃

7. 发明申请

US20050215006A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050215006A1
公开(公告)日：2005-09-29
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/8246 , H01L21/84 , H01L27/04 , H01L27/105 , H01L27/115 , H04B3/00
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译：公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。将第一膜沉积工艺的膜沉积温度设定为至少600℃

8. 发明申请

US20080061331A1 Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080061331A1
公开(公告)日：2008-03-13
申请号：US11657461
申请日：2007-01-25
申请人： Wensheng Wang , Masaki Kurasawa
发明人： Wensheng Wang , Masaki Kurasawa
IPC分类号： H01L29/94
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/56
摘要： An impurity-doped PZT film in an amorphous state doped with La, Ca, Sr, Si, Nb and/or the like is formed on a Pt film composing a bottom electrode film. Next, crystallization annealing for the impurity-doped PZT film is performed. Next, a PZT film is formed on the impurity-doped PZT film by an MOCVD method. Thereafter, an IrOX film, an IrOY film and an Ir film are formed on the PZT film.
摘要翻译：在构成底电极膜的Pt膜上形成掺杂有La，Ca，Sr，Si，Nb等的非晶状态的杂质掺杂PZT膜。接下来，进行掺杂杂质的PZT膜的结晶退火。接着，通过MOCVD法在杂质掺杂的PZT膜上形成PZT膜。此后，在PZT膜上形成IrO x X膜，IrO Y Y膜和Ir膜。

9. 发明申请

US20120276659A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120276659A1
公开(公告)日：2012-11-01
申请号：US13544995
申请日：2012-07-10
申请人： Wensheng WANG , Masaki Kurasawa
发明人： Wensheng WANG , Masaki Kurasawa
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/56
摘要： An impurity-doped PZT film in an amorphous state doped with La, Ca, Sr, Si, Nb and/or the like is formed on a Pt film composing a bottom electrode film. Next, crystallization annealing for the impurity-doped PZT film is performed. Next, a PZT film is formed on the impurity-doped PZT film by an MOCVD method. Thereafter, an IrOX film, an IrOY film and an Ir film are formed on the PZT film.
摘要翻译：在构成底电极膜的Pt膜上形成掺杂有La，Ca，Sr，Si，Nb等的非晶状态的杂质掺杂PZT膜。接下来，进行掺杂杂质的PZT膜的结晶退火。接着，通过MOCVD法在杂质掺杂的PZT膜上形成PZT膜。此后，在PZT膜上形成IrOX膜，IrOY膜和Ir膜。

10. 发明授权

US07674634B2 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07674634B2
公开(公告)日：2010-03-09
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together.The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有大量的极化电荷的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

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