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1. 发明授权

US06483111B1 Thermal infrared-detector array and method of fabrication thereof 有权
标题翻译：热红外探测器阵列及其制造方法
公开(公告)号：US06483111B1
公开(公告)日：2002-11-19
申请号：US09394095
申请日：1999-09-13
申请人： Tomohiro Ishikawa , Masafumi Kimata
发明人： Tomohiro Ishikawa , Masafumi Kimata
IPC分类号： G01J520
CPC分类号： H01L27/14649 , G01J5/20 , H01L27/14689
摘要： A thermal infrared-detector array has semiconductor-junction elements as detectors. It has high sensitivity and low noise and is fabricated in semiconductor-fabrication process. The semiconductor-junction elements are located in a monocrystalline silicon layer overlying a silicon-oxide layer on a monocrystalline silicon substrate. A signal-output circuit reading out signals from the detector elements includes transistors located on the monocrystalline silicon substrate.
摘要翻译：热红外检测器阵列具有作为检测器的半导体结元件。它具有高灵敏度和低噪声，并且在半导体制造工艺中制造。半导体结元件位于单晶硅衬底上的硅氧化物层上的单晶硅层中。从检测器元件读出信号的信号输出电路包括位于单晶硅衬底上的晶体管。

2. 发明授权

US5998816A Sensor element with removal resistance region 失效
标题翻译：具有去除电阻区域的传感器元件
公开(公告)号：US5998816A
公开(公告)日：1999-12-07
申请号：US926974
申请日：1997-09-10
申请人： Yoshiyuki Nakaki , Tomohiro Ishikawa , Masashi Ueno , Hisatoshi Hata , Masafumi Kimata
发明人： Yoshiyuki Nakaki , Tomohiro Ishikawa , Masashi Ueno , Hisatoshi Hata , Masafumi Kimata
IPC分类号： G01D21/00 , B81B3/00 , B81C1/00 , G01P15/08 , H01L21/302 , H01L21/3065 , H01L37/02 , H01L27/20 , H01L29/84
CPC分类号： H01L37/02 , B81C1/00571 , G01P15/0802 , B81B2201/0278 , B81B2207/015 , B81C2201/014 , Y10S73/01 , Y10S73/04
摘要： A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
摘要翻译：一种传感器元件，设置有具有半导体电路的硅衬底，形成在硅衬底上并连接到半导体电路的感测元件部分，以及通过去除感测元件部分下方的硅衬底部分形成的空腔部分，其中在半导体电路和空腔部分之间的硅衬底中提供具有抵抗衬底移除的去除电阻区域。

3. 发明授权

US6031231A Infrared focal plane array 失效
标题翻译：红外焦平面阵列
公开(公告)号：US6031231A
公开(公告)日：2000-02-29
申请号：US927407
申请日：1997-09-10
申请人： Masafumi Kimata , Tomohiro Ishikawa , Kazuhiko Tsutsumi , Hisatoshi Hata
发明人： Masafumi Kimata , Tomohiro Ishikawa , Kazuhiko Tsutsumi , Hisatoshi Hata
IPC分类号： G01J1/02 , G01J5/02 , G01J5/10 , G01J5/12 , H01L27/14 , H01L27/146 , H01L35/32 , H01L37/02 , H04N5/33 , G01J5/20
CPC分类号： H01L27/14649 , G01J5/08 , G01J5/0853 , G01J5/10 , H01L37/02
摘要： A two-dimensional infrared focal plane array of temperature detecting units is provided with the temperature detecting units being arranged for every pixel in a two-dimensional arrangement on a semiconductor substrate. Each temperature detecting unit is formed integrally with readout circuitry. Each temperature detecting unit further has a temperature detecting portion which is supported by support legs made of a high thermal resistance material to reduce heat flow to the semiconductor substrate. Each temperature detecting unit also has a temperature detecting element with an infrared ray absorbing portion which is spliced by at least one splicing pillar with the temperature detecting element.
摘要翻译：温度检测单元的二维红外焦平面阵列设置有温度检测单元，其布置在半导体基板上的二维布置中的每个像素。每个温度检测单元与读出电路整体形成。每个温度检测单元还具有温度检测部分，其由由高热阻材料制成的支撑腿支撑，以减少对半导体基板的热流。每个温度检测单元还具有温度检测元件，其具有通过至少一个具有温度检测元件的拼接柱拼接的红外线吸收部分。

4. 发明授权

US5998778A Focal plane array and driving method therefor 失效
标题翻译：焦平面阵列及其驱动方法
公开(公告)号：US5998778A
公开(公告)日：1999-12-07
申请号：US934081
申请日：1997-09-19
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H04N5/3728 , H04N3/14
CPC分类号： H04N3/1537 , H04N3/1575
摘要： A focal plane array comprising two-dimensionally arranged photodetectors, charge transfer devices, transfer gates and a pixel row selection circuit, the focal plane array being operated in such a manner that the signal charges are read out from the photodetectors to vertical charge transfer device in one horizontal retrace period and the signal charges stored in the vertical charge transfer device are transferred to outside of a photodetector array region, wherein the pixel row selection circuit comprises a shift register and a switching transistor connected between the shift register and the transfer gates; and by combination of driving the shift resister and driving the switching transistor the horizontal line is selected so that a photodetector from which signal charge is to be read out is selected.
摘要翻译：包括二维布置的光电检测器，电荷转移装置，传输门和像素行选择电路的焦平面阵列，焦平面阵列以这样的方式操作，即将信号电荷从光电探测器读出到垂直电荷转移装置一个水平回扫周期和存储在垂直电荷转移装置中的信号电荷被转移到光电检测器阵列区域的外部，其中像素行选择电路包括连接在移位寄存器和传输门之间的移位寄存器和开关晶体管; 并且通过驱动移位寄存器并驱动开关晶体管的组合，选择水平线，使得选择要从其读出信号电荷的光电检测器。

5. 发明授权

US5444484A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US5444484A
公开(公告)日：1995-08-22
申请号：US979912
申请日：1992-11-23
申请人： Naoki Yutani , Masafumi Kimata
发明人： Naoki Yutani , Masafumi Kimata
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N3/14
CPC分类号： H04N3/1512 , H04N3/1575
摘要： A solid-state imaging device includes a two-dimensional array of photodetectors, a TG scanner outputting a selection pulse for reading out signal charges stored in the photodetectors, an interlace circuit receiving the selection pulse from said TG scanner and converting the selection pulse to a field storage mode operation pulse or to a frame storage mode operation pulse, and an interlace switching circuit receiving the pulse from said interlace circuit and switching the array of photodetectors between the field storage mode and the frame storage mode. The switching between the frame storage mode and the field storage mode is controlled by an external control signal. Therefore, the solid-state imaging device can select an optimum interlace system according to background conditions and the brightness and size of objects imaged.
摘要翻译：固态成像装置包括光电检测器的二维阵列，输出用于读出存储在光电检测器中的信号电荷的选择脉冲的TG扫描器，从所述TG扫描器接收选择脉冲并将选择脉冲转换为场存储模式操作脉冲或帧存储模式操作脉冲，以及隔行切换电路，其接收来自所述隔行电路的脉冲，并且在场存储模式和帧存储模式之间切换光电检测器阵列。帧存储模式和现场存储模式之间的切换由外部控制信号控制。因此，固态成像装置可以根据背景条件和成像对象的亮度和大小来选择最佳隔行扫描系统。

6. 发明授权

US4831426A Solid state image sensing device and a method of manufacturing the same 失效
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US4831426A
公开(公告)日：1989-05-16
申请号：US890518
申请日：1986-07-30
申请人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
发明人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
IPC分类号： H01L31/00 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14887 , H01L27/14831
摘要： Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.
摘要翻译：扩散自对准MOS晶体管被施加到固态图像感测装置，以便以自对准方式形成控制区域（80），其中从形成在半导体（1）上的光信号检测区域（70）读取信号电荷，对电荷转移区域（30）进行控制。

7. 发明授权

US4652925A Solid state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4652925A
公开(公告)日：1987-03-24
申请号：US698521
申请日：1985-02-05
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H04N5/30 , H01L27/148 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A solid state imaging device comprises a plurality of photodetectors (111 to 149) disposed two-dimensionally on a semiconductor substrate and a plurality of vertical charge transfer devices (411 to 431 and 511 to 528). Transfer gates (211 to 249) are provided in association with the respective photodetector (111 to 149) and the respective vertical charge transfer devices so as to be disposed therebetween. The transfer gates (211 to 249) are electrically connected for each group of three transfer gates in a horizontal direction, a driving signal being applied selectively to each group from a scanning circuit (300). Accordingly, by means of one of the groups of the transfer gates (211 to 249), to which a driving signal is selectively applied from the scanning circuit (300), a signal charge generated in the corresponding ones of the photodetectors (111 to 149) is transferred to the vertical charge transfer devices (411 to 431 and 511 to 528). By means of the vertical charge transfer devices (411 to 431 and 511 to 528), a signal charge in an arbitrary row is transferred to a horizontal charge transfer device through storage gates (610, 620 and 630). Consequently, for each vertical transfer, only a signal charge corresponding to one picture element is contained in a vertical line and accordingly if overflow of a signal charge occurs, a blooming phenomenon will never occur.
摘要翻译：固态成像装置包括在半导体衬底上二维设置的多个光电探测器（111至149）和多个垂直电荷转移装置（411至431和511至528）。与相应的光电检测器（111至149）和各个垂直电荷转移装置相关联地设置转移门（211至249）以便设置在它们之间。传输门（211至249）在水平方向上对于每组三个传输门电连接，驱动信号从扫描电路（300）选择性地施加到每个组。因此，通过从扫描电路（300）选择性地施加驱动信号的传输门（211〜249）中的一组，在相应的光检测器（111〜149）中产生的信号电荷）转移到垂直电荷转移装置（411至431和511至528）。通过垂直电荷转移装置（411至431和511至528），任意行中的信号电荷通过存储门（610,620和630）传送到水平电荷转移装置。因此，对于每个垂直传输，只有与一个像素相对应的信号电荷被包含在垂直线中，因此如果发生信号电荷的溢出，则不会发生开花现象。

8. 发明授权

US4581539A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4581539A
公开(公告)日：1986-04-08
申请号：US519904
申请日：1983-08-03
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374 , H01J40/14
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A solid-state image sensor comprises photo sensors (111 to 114, 211 to 214 and 311 to 314), transfer gates (121 to 124, 221 to 224 and 321 to 324), a selecting circuit (800), vertical charge transferring elements (130, 230 and 330) and a driving circuit (900) for applying clock signals to the vertical charge transferring elements. When the vertical charge transferring elements receive signal charge from the photo sensors, the vertical charge transferring elements constitute respectively a continuous potential well, and then transfer of the signal charge in the vertical charge transferring elements is performed by controlling the clock signals applied to the vertical charge transferring elements so as to move a potential barrier successively toward the moving direction of the charge.
摘要翻译：固态图像传感器包括光传感器（111至114,211至214和311至314），传输门（121至124,221至224和321至324），选择电路（800），垂直电荷转移元件（130,230和330）以及用于向垂直电荷转移元件施加时钟信号的驱动电路（900）。当垂直电荷转移元件从光电传感器接收信号电荷时，垂直电荷转移元件分别构成连续势阱，然后通过控制施加到垂直电荷转移元件的时钟信号来执行垂直电荷转移元件中的信号电荷的转移电荷转移元件，以朝向电荷的移动方向依次移动势垒。

9. 发明申请

US20070120982A1 Imaging Device 有权
标题翻译：成像设备
公开(公告)号：US20070120982A1
公开(公告)日：2007-05-31
申请号：US11553577
申请日：2006-10-27
申请人： Masaya OITA , Hiromichi Tanaka , Masafumi Kimata
发明人： Masaya OITA , Hiromichi Tanaka , Masafumi Kimata
IPC分类号： H04N5/225 , H04N9/04
CPC分类号： H04N5/2357 , H04N5/23245 , H04N5/235 , H04N5/3456 , H04N5/3559 , H04N5/37457
摘要： In an imaging device having an all-pixel read mode for reading signals from all pixels and a pixel downsampling read mode for reading signals by appropriately discarding pixels, adjacent ones of pixels use a floating diffusion capacitance, an amplifying transistor, a reset switch and a selection switch in common. In the pixel downsampling read mode, not only a primary capacitance but also a photodiode in each pixel to be discarded are used as capacitances for storing signal charges transferred from transfer switches. This makes it possible to lower the gate voltage of the amplifying transistor as compared with the case of using only the primary capacitance as a capacitance for storing signal charges transferred from a transfer switch to reduce the sensitivity of the pixels, thereby reducing the occurrence of flicker.
摘要翻译：在具有用于从所有像素读取信号的全像素读取模式和用于通过适当地丢弃像素来读取信号的像素下采样读取模式的成像装置中，相邻的像素使用浮动扩散电容，放大晶体管，复位开关和选择开关共同。在像素下采样读取模式中，不仅要将要丢弃的每个像素中的一次电容，而且还将光电二极管用作用于存储从转换开关传送的信号电荷的电容。与仅使用一次电容作为用于存储从转换开关传送的信号电荷的电容的情况相比，可以降低放大晶体管的栅极电压，以降低像素的灵敏度，从而减少闪烁的发生。

10. 发明授权

US4808834A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4808834A
公开(公告)日：1989-02-28
申请号：US20194
申请日：1987-02-26
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/372 , H04N5/374 , H01J40/14
CPC分类号： H01L27/14831
摘要： A CSD type solid-state image sensor comprises an n-type semiconductor substrate (10), p-type impurity regions (20, 30, 40) formed thereon spaced apart from each other, a photodetector portion (21) formed on the p-type impurity region (20), a transfer gate selecting circuit (700) formed on the p-type impurity region (30) and a vertical charge transfer device driving circuit (800) formed on the p-type impurity region (40). The photodetector portion (21) comprises a photodetector (101), a transfer gate (7) and a vertical charge transfer device (8), and the transfer gate (7) and the vertical charge transfer device (8) have a common gate electrode (201). The potential in the p-type impurity region (20) is set to -V.sub.PW by a power supply (50), while the potential in the p-type impurity regions (30, 40) is set to -V.sub.SW (V.sub.PW
摘要翻译： CSD型固态图像传感器包括n型半导体衬底（10），彼此间隔开形成的p型杂质区（20,30,40），形成在p型杂质区上的p型杂质区（20,30,40）形成在p型杂质区（30）上的传输栅选择电路（700）和形成在p型杂质区（40）上的垂直电荷转移装置驱动电路（800）。光电检测器部分（21）包括光电检测器（101），传输门（7）和垂直电荷转移装置（8），传输门（7）和垂直电荷转移装置（8）（201）。 p型杂质区域（20）中的电位通过电源（50）设定为-VPW，而p型杂质区域（30,40）中的电位设定为-VSW（VPW

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