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1. 发明授权

US07692177B2 Resistance variable memory element and its method of formation 有权
标题翻译：电阻变量记忆元件及其形成方法
公开(公告)号：US07692177B2
公开(公告)日：2010-04-06
申请号：US11480412
申请日：2006-07-05
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L47/00
CPC分类号： C23C16/305 , C23C14/0623 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1616 , H01L45/1625 , Y10T428/12694
摘要： A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
摘要翻译：本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层，形成在第一硫族化物玻璃层上形成的第一金属含层上。含金属薄层优选为银层。可以在薄银层上方形成电极。电极优选不含银。

2. 发明授权

US07542319B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
标题翻译：硫族化物玻璃恒流装置及其制造和操作方法
公开(公告)号：US07542319B2
公开(公告)日：2009-06-02
申请号：US11653883
申请日：2007-01-17
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： G11C27/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

3. 发明授权

US07223627B2 Memory element and its method of formation 有权
标题翻译：记忆元素及其形成方法
公开(公告)号：US07223627B2
公开(公告)日：2007-05-29
申请号：US10988836
申请日：2004-11-16
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： C23C16/305 , C23C14/0623 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1616 , H01L45/1625 , Y10T428/12694
摘要： A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
摘要翻译：本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层，形成在第一硫族化物玻璃层上形成的第一金属含层上。含金属薄层优选为银层。可以在薄银层上方形成电极。电极优选不含银。

4. 发明授权

US06912147B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
标题翻译：硫族化物玻璃恒流装置及其制造和操作方法
公开(公告)号：US06912147B2
公开(公告)日：2005-06-28
申请号：US10876664
申请日：2004-06-28
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： C03C3/32 , C03C17/02 , G05F1/44 , G11C16/02 , H01L27/00 , H01L29/06 , H01L45/00 , G11C13/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

5. 发明授权

US06891749B2 Resistance variable ‘on ’ memory 有权
标题翻译：电阻变量'on'记忆
公开(公告)号：US06891749B2
公开(公告)日：2005-05-10
申请号：US10077872
申请日：2002-02-20
申请人： Kristy A. Campbell , John T. Moore , Terry L. Gilton
发明人： Kristy A. Campbell , John T. Moore , Terry L. Gilton
IPC分类号： G11C13/02 , G11C16/02 , H01L45/00 , G11C11/00
CPC分类号： G11C13/0011 , G11C13/0004 , G11C2213/51 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providing a differential electrochemical potential across the resistance variable memory element which causes the resistance variable memory element to write to a predetermined “on” state. The resistance variable memory element is stabilized in a low resistance “on” state by the differential electrochemical potential. The first electrode preferably is a platinum electrode and the second electrode is preferably a silver electrode. The method and circuitry further includes a reverse refresh for stabilizing the resistance variable memory element in a high resistance state by applying a reverse voltage to the memory element.
摘要翻译：一种电阻可变存储元件和方法，用于通过提供连接到电阻可变材料的第一和第二电极来稳定电阻可变存储元件，由此第一和第二电极包括能够在电阻可变存储元件两端提供差分电化学电位的材料，电阻变量存储元件写入预定的“开”状态。电阻可变存储元件通过差分电化学电位稳定在低电阻“导通”状态。第一电极优选为铂电极，第二电极优选为银电极。所述方法和电路还包括用于通过向存储元件施加反向电压来将电阻可变存储元件稳定在高电阻状态的反向刷新。

6. 发明授权

US06867114B2 Methods to form a memory cell with metal-rich metal chalcogenide 有权
标题翻译：用金属富金属硫族化物形成记忆电池的方法
公开(公告)号：US06867114B2
公开(公告)日：2005-03-15
申请号：US10231779
申请日：2002-08-29
申请人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
发明人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
IPC分类号： H01L27/24 , H01L45/00 , H01L21/04
CPC分类号： H01L45/1675 , H01L27/2463 , H01L45/085 , H01L45/143 , H01L45/1641
摘要： The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide. One embodiment of the process implants oxygen to silver selenide to form selenium oxide. The selenium oxide is then removed by annealing, which results in silver-rich silver selenide. Advantageously, the processes can dope silver into a variety of materials, including non-transparent materials, with relatively high uniformity and with relatively precise control.
摘要翻译：本发明涉及电阻可变材料单元或可编程金属化单元的制造。本文所述的方法可形成金属富金属硫族化物，例如富银硒化银。有利的是，该方法可以形成富含金属的金属硫属元素化物，而不需要使用光致激发技术，而不会直接沉积金属。例如，该过程可以从硒化银中除去硒。该方法的一个实施方案是将氧沉积到硒化银以形成氧化硒。然后通过退火除去氧化硒，这导致富银银硒化银。有利的是，该方法可以将银掺杂到各种材料中，包括非透明材料，具有相对高的均匀性和相对精确的控制。

7. 发明授权

US07518212B2 Graded GexSe100-x concentration in PCRAM 有权
标题翻译：在PCRAM中分级GexSe100-x浓度
公开(公告)号：US07518212B2
公开(公告)日：2009-04-14
申请号：US11195642
申请日：2005-08-03
申请人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
发明人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
IPC分类号： H01L29/00
CPC分类号： H01L45/1683 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/1658
摘要： The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.
摘要翻译：本发明提供了一种PCRAM元件的设计，其结合了多种不同化学计量的含金属的硒化锗玻璃层。本发明还提供了制造所公开的PCRAM结构的方法。

8. 发明授权

US07459764B2 Method of manufacture of a PCRAM memory cell 有权
标题翻译： PCRAM存储单元的制造方法
公开(公告)号：US07459764B2
公开(公告)日：2008-12-02
申请号：US10886676
申请日：2004-07-09
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L29/00
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/1658
摘要： The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
摘要翻译：本发明提供一种形成电阻可变存储元件和所得元件的方法。该方法包括形成其中具有开口的绝缘层; 形成凹陷在所述开口中的含金属层; 在所述开口内和所述含金属层上形成电阻变化材料; 并且处理电阻可变材料和含金属层以产生在开口内含有扩散金属的电阻变化材料。

9. 发明申请

US20080212357A1 Simultaneous read circuit for multiple memory cells 有权
公开(公告)号：US20080212357A1
公开(公告)日：2008-09-04
申请号：US12073056
申请日：2008-02-28
申请人： Kristy A. Campbell , Terry L. Gilton
发明人： Kristy A. Campbell , Terry L. Gilton
IPC分类号： G11C13/00 , G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C7/06 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C13/004 , G11C2207/066 , G11C2213/31 , G11C2213/77
摘要： A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing state.

10. 发明授权

US07366030B2 Simultaneous read circuit for multiple memory cells 有权
标题翻译：多个存储单元同时读取电路
公开(公告)号：US07366030B2
公开(公告)日：2008-04-29
申请号：US10766010
申请日：2004-01-29
申请人： Kristy A. Campbell , Terry L. Gilton
发明人： Kristy A. Campbell , Terry L. Gilton
IPC分类号： G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C7/06 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C13/004 , G11C2207/066 , G11C2213/31 , G11C2213/77
摘要： A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing state.
摘要翻译：一种存储器件，其包括使用快速傅里叶变换分析电路在单个互连上的多个存储器单元的同时读取电路设计。同时读取电路可以与任何存储器类型存储信息一起用作能量吸收状态。

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