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    • 8. 发明授权
    • Method for cleaning semiconductor wafer
    • 半导体晶片清洗方法
    • US09082610B2
    • 2015-07-14
    • US14113329
    • 2012-05-11
    • Tatsuo AbeHitoshi Kabasawa
    • Tatsuo AbeHitoshi Kabasawa
    • C23G1/02H01L21/02
    • H01L21/02052
    • The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided.
    • 本发明提供了一种清洗半导体晶片的方法,其中该方法包括以下顺序的HF清洗,臭氧水清洗和HF清洗的清洗步骤至少一次,其中在清洗方法中最后进行的HF清洗 半导体晶片进行清洁,使得通过臭氧水形成在半导体晶片的表面上的氧化膜未被完全去除并且在半导体晶片的表面上保持其厚度的一部分。 结果,提供了一种用于清洁半导体晶片的方法,其中可以在半导体晶片的清洁中同时减少金属杂质水平和颗粒水平。
    • 9. 发明申请
    • METHOD FOR CLEANING SEMICONDUCTOR WAFER
    • 清洗半导体波形的方法
    • US20130233344A1
    • 2013-09-12
    • US13989605
    • 2011-11-01
    • Hitoshi KabasawaTatsuo Abe
    • Hitoshi KabasawaTatsuo Abe
    • H01L21/02
    • H01L21/02041H01L21/02052
    • The present invention is a method for cleaning a semiconductor wafer comprising the steps of cleaning the semiconductor wafer with an SC1 cleaning solution, cleaning the semiconductor wafer cleaned by the SC1 cleaning solution with hydrofluoric acid, and cleaning the semiconductor wafer cleaned by the hydrofluoric acid with ozonated water having an ozone concentration of 3 ppm or more, wherein an etching removal of the semiconductor wafer with the SC1 cleaning solution is made 0.1 to 2.0 nm, whereby a method for cleaning a semiconductor wafer in which worsening of the surface roughness of the wafer due to cleaning can be reduced and cleaning of the wafer can be carried out effectively can be provided.
    • 本发明是一种清洗半导体晶片的方法,包括以下步骤:用SC1清洗液清洗半导体晶片,用氢氟酸清洗由SC1清洗液清洗的半导体晶片,并清洗由氢氟酸清洗的半导体晶片, 臭氧浓度为3ppm以上的臭氧化水,其中用SC1清洗液对半导体晶片进行的蚀刻去除为0.1〜2.0nm,由此提供一种清洗半导体晶片的方法,其中晶片的表面粗糙度变差 由于清洗可以减少,可以有效地进行晶片的清洗。
    • 10. 发明授权
    • Water and method for storing silicon wafer
    • 用于储存硅晶片的水和方法
    • US08303722B2
    • 2012-11-06
    • US10276483
    • 2002-03-11
    • Tatsuo AbeKenichi KanazawaAkira MiyashitaNorio Kashimura
    • Tatsuo AbeKenichi KanazawaAkira MiyashitaNorio Kashimura
    • B08B7/00B08B3/00B08B7/04
    • H01L21/02052
    • There is provided a storage water of a silicon wafer wherein a liquid temperature of the storage water is 0 to 18° C. And there is provided a shower water of a silicon wafer wherein a liquid temperature of the shower water is 0 to 18° C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer wherein the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18° C., and is then stored in liquid using a storage water of which liquid temperature is 0 to 18° C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it wherein degradation of the wafer quality can be prevented.
    • 提供储存水的液体温度为0〜18℃的硅晶片的储存水。另外,提供了一种硅晶片的淋浴水,其中淋浴水的液温为0〜18℃ 将晶片储存在储存水中,并使用淋浴水淋浴。 本发明还涉及一种用于储存硅晶片的方法,其中使用液体温度为0至18℃的淋浴水将硅晶片淋浴,然后使用液体温度为0的储水将其储存在液体中 从而可以提供一种用于储存硅晶片的水,一种储存硅晶片的方法,一种用于淋浴的水以及一种用于淋浴的方法,其中可以防止晶片质量的降低。