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1. 发明授权

US06721637B2 Hybrid vehicle 有权
标题翻译：混合动力汽车
公开(公告)号：US06721637B2
公开(公告)日：2004-04-13
申请号：US10196162
申请日：2002-07-17
申请人： Tatsuo Abe , Eiji Inada
发明人： Tatsuo Abe , Eiji Inada
IPC分类号： B60R604
CPC分类号： B60W20/12 , B60K6/48 , B60K6/543 , B60L15/20 , B60L2240/62 , B60L2240/622 , B60L2240/70 , B60L2250/16 , B60W10/06 , B60W10/08 , B60W10/26 , B60W20/00 , B60W2510/244 , B60W2550/402 , B60W2710/08 , Y02T10/6221 , Y02T10/6269 , Y02T10/6291 , Y02T10/645 , Y02T10/7275 , Y02T10/7291 , Y02T90/16 , Y02T90/162 , Y10S903/918
摘要： A point at which an external power supply is installed is registered in map data in a map information device as a base point. An EV running area centered on the base point is registered as map data in the map information device, and EV running is performed when a vehicle is in the EV running area.
摘要翻译：在地图信息装置的地图数据中登记安装了外部电源的点作为基点。将以基点为中心的EV行驶区域作为地图数据登记在地图信息装置中，并且当车辆处于EV行驶区域时执行EV行驶。

2. 发明授权

US06814170B2 Hybrid vehicle 失效
标题翻译：混合动力汽车
公开(公告)号：US06814170B2
公开(公告)日：2004-11-09
申请号：US10196163
申请日：2002-07-17
申请人： Tatsuo Abe , Eiji Inada
发明人： Tatsuo Abe , Eiji Inada
IPC分类号： B60K100
CPC分类号： B60W20/13 , B60K6/48 , B60K6/543 , B60L15/20 , B60L2240/62 , B60L2250/16 , B60W10/06 , B60W10/08 , B60W10/26 , B60W20/00 , B60W2510/244 , B60W2550/402 , Y02T10/6221 , Y02T10/6269 , Y02T10/6291 , Y02T10/645 , Y02T10/7275 , Y02T10/7291 , Y02T90/16 , Y02T90/162 , Y10S903/918 , Y10T477/23
摘要： A point at which an external power supply is installed is registered in map data in a map information device as a base point. An EV running area centered on the aforesaid base point is registered as map data in the aforesaid map information device. When running towards the base point from outside the EV running area, while performing HEV running before arriving in the EV running area, the charge value of the battery is increased beforehand. Hence, when the vehicle enters the EV running area, it switches to EV running.
摘要翻译：在地图信息装置的地图数据中登记安装了外部电源的点作为基点。以上述基点为中心的EV行驶区域在上述地图信息装置中登记为地图数据。当从EV运行区域外面向基点运行时，在进入EV运行区域之前执行HEV运行时，预先增加电池的充电值。因此，当车辆进入EV运行区域时，切换到EV运行。

3. 发明授权

US09725587B2 Injection molded article 有权
公开(公告)号：US09725587B2
公开(公告)日：2017-08-08
申请号：US13876867
申请日：2011-09-30
申请人： Tomoyuki Fujisawa , Tatsuo Abe
发明人： Tomoyuki Fujisawa , Tatsuo Abe
IPC分类号： C08L25/06 , B29C45/26 , B29C45/00 , B29C45/17 , B29C45/73
CPC分类号： C08L25/06 , B29C45/0005 , B29C45/0013 , B29C45/0025 , B29C45/0046 , B29C45/1703 , B29C45/174 , B29C45/2669 , B29C2045/0044 , B29C2045/1722 , B29C2045/7356 , B29C2045/7393
摘要： An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 μm or less from a surface of the weld is parallel to the surface of the weld.

4. 发明申请

US20070252444A1 Canned Linear Motor Armature and Canned Linear Motor 失效
标题翻译：罐装线性电机电枢和直线电机
公开(公告)号：US20070252444A1
公开(公告)日：2007-11-01
申请号：US11597249
申请日：2005-04-01
申请人： Kenichi Sadakane , Toru Shikayama , Tatsuo Abe , Akio Sakai , Shusaku Yoshida
发明人： Kenichi Sadakane , Toru Shikayama , Tatsuo Abe , Akio Sakai , Shusaku Yoshida
IPC分类号： H02K41/02
CPC分类号： H02K41/031 , H02K3/24 , H02K3/44 , H02K3/47 , H02K5/128 , H02K5/225 , H02K9/19
摘要： In the canned linear motor armature, both the side surfaces of the armature winding (18) are fixed by two winding fixing frames (4) so as to sandwich the armature winding in between them in the longitudinal direction. A refrigerant passage (5) is provided in a space between the can (3) and the winding fixing frame (4). A seal material (24) is provided in a gap between a case (2) and the winding fixing frame (4) to prevent a refrigerant supplied to the refrigerant passage (5) from leaking to the armature winding (18) sandwiched in between the two winding fixing frames (4) to impregnate the armature winding (18) with the refrigerant. A waterproof film is adhered onto a surface of the winding fixing frame (4) where the refrigerant comes into contact.
摘要翻译：在固定线性电动机电枢中，电枢绕组（18）的两个侧面由两个绕组固定框架（4）固定，以将电枢绕组沿长度方向夹在它们之间。在罐（3）和卷绕固定框架（4）之间的空间中设置制冷剂通道（5）。密封材料（24）设置在壳体（2）和绕组固定框架（4）之间的间隙中，以防止供给制冷剂通道（5）的制冷剂泄漏到夹在其间的电枢绕组（18）两个卷绕的固定框架（4），用制冷剂浸渍电枢绕组（18）。防水膜粘附到制冷剂接触的卷绕固定框架（4）的表面上。

5. 发明申请

US20130203932A1 INJECTION MOLDED ARTICLE 有权
标题翻译：注射成型品
公开(公告)号：US20130203932A1
公开(公告)日：2013-08-08
申请号：US13876867
申请日：2011-09-30
申请人： Tomoyuki Fujisawa , Tatsuo Abe
发明人： Tomoyuki Fujisawa , Tatsuo Abe
IPC分类号： C08L25/06
CPC分类号： C08L25/06 , B29C45/0005 , B29C45/0013 , B29C45/0025 , B29C45/0046 , B29C45/1703 , B29C45/174 , B29C45/2669 , B29C2045/0044 , B29C2045/1722 , B29C2045/7356 , B29C2045/7393
摘要： An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 μm or less from a surface of the weld is parallel to the surface of the weld.
摘要翻译：一种注射成型热塑性树脂组合物的注射成型体，该热塑性树脂组合物包含100质量份热塑性树脂和50质量份以下的填料和着色金属颜料中的至少一种，其中至少存在一个焊缝，以及存在于焊接表面的50μm以下的截面深度内的填料的95质量％以上的长直径平行于焊接面。

6. 发明授权

US07663270B2 Canned linear motor armature and canned linear motor 失效
标题翻译：罐装线性电机电枢和罐装线性电机
公开(公告)号：US07663270B2
公开(公告)日：2010-02-16
申请号：US11597249
申请日：2005-04-01
申请人： Kenichi Sadakane , Toru Shikayama , Tatsuo Abe , Akio Sakai , Shusaku Yoshida
发明人： Kenichi Sadakane , Toru Shikayama , Tatsuo Abe , Akio Sakai , Shusaku Yoshida
IPC分类号： H02K41/02
CPC分类号： H02K41/031 , H02K3/24 , H02K3/44 , H02K3/47 , H02K5/128 , H02K5/225 , H02K9/19
摘要： In the canned linear motor armature, both the side surfaces of the armature winding (18) are fixed by two winding fixing frames (4) so as to sandwich the armature winding in between them in the longitudinal direction. A refrigerant passage (5) is provided in a space between the can (3) and the winding fixing frame (4). A seal material (24) is provided in a gap between a case (2) and the winding fixing frame (4) to prevent a refrigerant supplied to the refrigerant passage (5) from leaking to the armature winding (18) sandwiched in between the two winding fixing frames (4) to impregnate the armature winding (18) with the refrigerant. A waterproof film is adhered onto a surface of the winding fixing frame (4) where the refrigerant comes into contact.
摘要翻译：在固定线性电动机电枢中，电枢绕组（18）的两个侧面由两个绕组固定框架（4）固定，以将电枢绕组沿长度方向夹在它们之间。在罐（3）和卷绕固定框架（4）之间的空间中设置制冷剂通道（5）。密封材料（24）设置在壳体（2）和绕组固定框架（4）之间的间隙中，以防止供给制冷剂通道（5）的制冷剂泄漏到夹在其间的电枢绕组（18）两个卷绕的固定框架（4），用制冷剂浸渍电枢绕组（18）。防水膜粘附到制冷剂接触的卷绕固定框架（4）的表面上。

7. 发明授权

US06374834B1 Substrate processing method and processing apparatus 失效
标题翻译：基板处理方法和处理装置
公开(公告)号：US06374834B1
公开(公告)日：2002-04-23
申请号：US09629301
申请日：2000-07-31
申请人： Tatsuo Abe , Tsutomu Doi
发明人： Tatsuo Abe , Tsutomu Doi
IPC分类号： B08B312
CPC分类号： H01L21/02052 , H01L21/67051 , Y10S134/902
摘要： This invention provides a cleaning method of cleaning a laser mark formed on a semiconductor wafer. A semiconductor wafer is rotated in a circumferential direction, and a laser mark is detected indirectly or directly in a non-contact manner. Rotation of the semiconductor wafer is controlled on the basis of detection of the laser mark, and an ultrasonic vibration-applied processing solution is sprayed to the laser mark.
摘要翻译：本发明提供一种清洁形成在半导体晶片上的激光标记的清洗方法。半导体晶片在圆周方向上旋转，并且以非接触的方式间接地或直接地检测激光标记。基于激光标记的检测来控制半导体晶片的旋转，并将超声波振动施加处理液喷射到激光标记。

8. 发明授权

US4041137A Method of producing aluminum fluoride 失效
标题翻译：生产氟化铝的方法
公开(公告)号：US4041137A
公开(公告)日：1977-08-09
申请号：US670215
申请日：1976-03-25
申请人： Tatsuo Abe , Toshiki Okamoto , Takao Sakakura , Tatsuo Tateno
发明人： Tatsuo Abe , Toshiki Okamoto , Takao Sakakura , Tatsuo Tateno
IPC分类号： B01D53/68 , B01D53/77 , C01F7/50
CPC分类号： C01F7/50
摘要： In the production of aluminum fluoride, a fluorine compound is absorbed from a gas containing the fluorine compound into a gas absorbing liquor comprising water containing alumina or hydrated alumina, or an aqueous aluminum fluoride solution containing alumina or hydrated alumina, and the absorbed fluorine compound is reacted with alumina or hydrated alumina to precipitate hydrated aluminum fluoride of high quality.
摘要翻译：在氟化铝的制造中，氟化合物从含氟化合物的气体吸收到含有氧化铝或水合氧化铝的水的气体吸收液中，或含有氧化铝或水合氧化铝的氟化铝水溶液中，被吸收的氟化合物为与氧化铝或水合氧化铝反应，沉淀出高质量的水合氟化铝。

9. 发明授权

US09082610B2 Method for cleaning semiconductor wafer 有权
标题翻译：半导体晶片清洗方法
公开(公告)号：US09082610B2
公开(公告)日：2015-07-14
申请号：US14113329
申请日：2012-05-11
申请人： Tatsuo Abe , Hitoshi Kabasawa
发明人： Tatsuo Abe , Hitoshi Kabasawa
IPC分类号： C23G1/02 , H01L21/02
CPC分类号： H01L21/02052
摘要： The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided.
摘要翻译：本发明提供了一种清洗半导体晶片的方法，其中该方法包括以下顺序的HF清洗，臭氧水清洗和HF清洗的清洗步骤至少一次，其中在清洗方法中最后进行的HF清洗半导体晶片进行清洁，使得通过臭氧水形成在半导体晶片的表面上的氧化膜未被完全去除并且在半导体晶片的表面上保持其厚度的一部分。结果，提供了一种用于清洁半导体晶片的方法，其中可以在半导体晶片的清洁中同时减少金属杂质水平和颗粒水平。

10. 发明申请

US20130233344A1 METHOD FOR CLEANING SEMICONDUCTOR WAFER 审中-公开
标题翻译：清洗半导体波形的方法
公开(公告)号：US20130233344A1
公开(公告)日：2013-09-12
申请号：US13989605
申请日：2011-11-01
申请人： Hitoshi Kabasawa , Tatsuo Abe
发明人： Hitoshi Kabasawa , Tatsuo Abe
IPC分类号： H01L21/02
CPC分类号： H01L21/02041 , H01L21/02052
摘要： The present invention is a method for cleaning a semiconductor wafer comprising the steps of cleaning the semiconductor wafer with an SC1 cleaning solution, cleaning the semiconductor wafer cleaned by the SC1 cleaning solution with hydrofluoric acid, and cleaning the semiconductor wafer cleaned by the hydrofluoric acid with ozonated water having an ozone concentration of 3 ppm or more, wherein an etching removal of the semiconductor wafer with the SC1 cleaning solution is made 0.1 to 2.0 nm, whereby a method for cleaning a semiconductor wafer in which worsening of the surface roughness of the wafer due to cleaning can be reduced and cleaning of the wafer can be carried out effectively can be provided.
摘要翻译：本发明是一种清洗半导体晶片的方法，包括以下步骤：用SC1清洗液清洗半导体晶片，用氢氟酸清洗由SC1清洗液清洗的半导体晶片，并清洗由氢氟酸清洗的半导体晶片，臭氧浓度为3ppm以上的臭氧化水，其中用SC1清洗液对半导体晶片进行的蚀刻去除为0.1〜2.0nm，由此提供一种清洗半导体晶片的方法，其中晶片的表面粗糙度变差由于清洗可以减少，可以有效地进行晶片的清洗。

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