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1. 发明公开

EP0836222A1 Interconnect structure comprising semiconductor material 失效
标题翻译： Leitungsstruktur aus Halbleitermaterial
公开(公告)号：EP0836222A1
公开(公告)日：1998-04-15
申请号：EP97117393.5
申请日：1997-10-08
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Niuya, Takayuki , Yang, Ming
IPC分类号： H01L21/28 , H01L23/532
CPC分类号： H01L27/10873 , H01L21/28061 , H01L21/76838 , H01L23/53257 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An interconnect for a semiconductor device, comprising: a first region 304 over a substrate 300, said first region having a first resistivity; a second region 306 over said first region, said second region having a lower resistivity than said first region; and a third region 308 over said second region, said third region having a higher resistivity than said second region. The first region is preferably a layer of polysilicon deposited over a gate oxide layer 302. The second region is a silicide, such as tungsten disilicide, and the third region is preferably polysilicon.
摘要翻译：一种用于半导体器件的互连，包括：在衬底300上的第一区域304，所述第一区域具有第一电阻率; 在所述第一区域之上的第二区域306，所述第二区域具有比所述第一区域低的电阻率; 以及在所述第二区域之上的第三区域308，所述第三区域具有比所述第二区域更高的电阻率。第一区域优选是沉积在栅极氧化物层302上的多晶硅层。第二区域是硅化物，例如二硅化钨，第三区域优选是多晶硅。

2. 发明公开

EP2063464A3 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：一种用于生产半导体器件的过程中氧化结构的方法
公开(公告)号：EP2063464A3
公开(公告)日：2009-06-17
申请号：EP09153586.4
申请日：1998-10-13
申请人： Texas Instruments Incorporated
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song C.
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/3205
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90
摘要： A method of fabricating, in a semiconductor processing chamber, an electrical device (100). The method comprising: forming an oxidizable insulating layer (104) over a semiconductor substrate (102); forming a silicon-containing structure (108) on said oxidizable insulating layer; forming a conductive structure (110, 112) on said silicon-containing structure; and oxidizing a portion of said oxidizable insulating layer and said silicon-containing structure while leaving said conductive structure substantially unoxidized by introducing O 2 and H 2 in the semiconductor processing chamber in an explosive reaction. The reaction between said O 2 and H 2 does not increase the pressure in the processing chamber beyond a predetermined safe level.
摘要翻译：的制造方法，在半导体处理腔室，以电气设备（100）的方法。该方法包括：形成在半导体衬底（102）可氧化绝缘层（104）上; 上形成可氧化的含硅结构（108）所述绝缘层; 形成于所述含硅结构的导电结构（110，112）; 和氧化所述可氧化绝缘层和所述含硅结构的一部分，同时保留在爆炸性反应中的半导体处理腔室引入O 2和H 2基本上未氧化的所述导电结构。所述O 2和H 2之间的反应在不增加超过预定的安全水平的处理室中的压力。

3. 发明授权

EP0910119B1 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：一种用于制造半导体器件的过程中氧化结构的方法
公开(公告)号：EP0910119B1
公开(公告)日：2009-06-03
申请号：EP98308341.1
申请日：1998-10-13
申请人： Texas Instruments Incorporated
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/3205
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90

4. 发明公开

EP0910119A2 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：一种用于制造半导体器件的过程中氧化结构的方法
公开(公告)号：EP0910119A2
公开(公告)日：1999-04-21
申请号：EP98308341.1
申请日：1998-10-13
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/3205
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90
摘要： An embodiment of the instant invention is a method of oxidizing a first feature (feature 108 and/or feature 104 of FIGURE 1 and feature 314 of FIGURE 3) while leaving a second feature substantially unoxidized (features 110 and 112 of FIGURE 1 and features 310 and 312 of FIGURE 3), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of a gas selected from the group consisting of: O 2 , N 2 O, CO 2 , H 2 O, and any combination thereof, and the hydrogen-containing gas is comprised of H 2 . The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.
摘要翻译：在本发明的一个实施方式是氧化的第一特征的方法，同时留下一个第二特征基本上未氧化（设有图1的110和112和特征310（特征108和/或特征。图1和图3的特征314的104）和图3），由对所述第一和第二功能，以向含氧气体和一个单独的含氢气体的方法312。优选地，所述含氧气体包含选自下组中选出的气体的：O2，N2O，CO2，H2O，和它们的任意组合，和含氢气体包括H 2的。第一特征，优选地，包含多晶硅，氧化硅，或介电材料制成，并且所述第二特征是，优选地，钨由。

5. 发明授权

EP2063464B1 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：用于在制造半导体器件期间氧化结构的方法
公开(公告)号：EP2063464B1
公开(公告)日：2017-11-29
申请号：EP09153586.4
申请日：1998-10-13
申请人： Texas Instruments Incorporated
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song C.
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/321 , H01L49/02
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90
摘要： A method of fabricating, in a semiconductor processing chamber, an electrical device (100). The method comprising: forming an oxidizable insulating layer (104) over a semiconductor substrate (102); forming a silicon-containing structure (108) on said oxidizable insulating layer; forming a conductive structure (110, 112) on said silicon-containing structure; and oxidizing a portion of said oxidizable insulating layer and said silicon-containing structure while leaving said conductive structure substantially unoxidized by introducing O 2 and H 2 in the semiconductor processing chamber in an explosive reaction. The reaction between said O 2 and H 2 does not increase the pressure in the processing chamber beyond a predetermined safe level.

6. 发明公开

EP2063464A2 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：一种用于制造半导体器件的过程中氧化结构的方法
公开(公告)号：EP2063464A2
公开(公告)日：2009-05-27
申请号：EP09153586.4
申请日：1998-10-13
申请人： Texas Instruments Incorporated
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song C.
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/3205
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90
摘要： A method of fabricating, in a semiconductor processing chamber, an electrical device (100). The method comprising: forming an oxidizable insulating layer (104) over a semiconductor substrate (102); forming a silicon-containing structure (108) on said oxidizable insulating layer; forming a conductive structure (110, 112) on said silicon-containing structure; and oxidizing a portion of said oxidizable insulating layer and said silicon-containing structure while leaving said conductive structure substantially unoxidized by introducing O 2 and H 2 in the semiconductor processing chamber in an explosive reaction. The reaction between said O 2 and H 2 does not increase the pressure in the processing chamber beyond a predetermined safe level.

7. 发明授权

EP0844667B1 Process of fabricating a storage capacitor for DRAM memory cell 失效
标题翻译：一种制备存储电容器用于DRAM存储器单元的过程
公开(公告)号：EP0844667B1
公开(公告)日：2002-10-02
申请号：EP97119999.7
申请日：1997-11-14
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Niuya, Takayuki
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/76897 , H01L27/10817 , H01L27/10855 , H01L27/10894 , H01L28/91

8. 发明公开

EP0910119A3 Method for oxidizing a structure during the fabrication of a semiconductor device 有权
标题翻译：一种用于制造半导体器件的过程中氧化结构的方法
公开(公告)号：EP0910119A3
公开(公告)日：2001-02-07
申请号：EP98308341.1
申请日：1998-10-13
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Lin, Boyang , Hwang, Ming , Niuya, Takayuki , Park, Song
IPC分类号： H01L21/316 , H01L21/311 , H01L21/28 , H01L21/3205
CPC分类号： H01L28/82 , H01L21/28061 , H01L21/32105 , H01L28/90
摘要： An embodiment of the instant invention is a method of oxidizing a first feature (feature 108 and/or feature 104 of FIGURE 1 and feature 314 of FIGURE 3) while leaving a second feature substantially unoxidized (features 110 and 112 of FIGURE 1 and features 310 and 312 of FIGURE 3), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of a gas selected from the group consisting of: O 2 , N 2 O, CO 2 , H 2 O, and any combination thereof, and the hydrogen-containing gas is comprised of H 2 . The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.
摘要翻译：的制造方法，在半导体处理腔室，以电气设备（100）的方法。该方法包括：形成在半导体衬底（102）可氧化绝缘层（104）上; 上形成可氧化的含硅结构（108）所述绝缘层; 形成于所述含硅结构的导电结构（110，112）; 和氧化所述可氧化绝缘层和所述含硅结构的一部分，同时保留在爆炸性反应中的半导体处理腔室引入O 2和H 2基本上未氧化的所述导电结构。所述O 2和H 2之间的反应在不增加超过预定的安全水平的处理室中的压力。

9. 发明公开

EP0844667A3 Storage capacitor for DRAM memory cell and the process of fabricating the same 失效
标题翻译：相同的存储电容器，用于制备DRAM的存储单元和处理的
公开(公告)号：EP0844667A3
公开(公告)日：2000-01-19
申请号：EP97119999.7
申请日：1997-11-14
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Niuya, Takayuki
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/76897 , H01L27/10817 , H01L27/10855 , H01L27/10894 , H01L28/91
摘要： A process for fabricating a crown-cell capacitor in a memory integrated circuit. The process includes the step of forming a transistor having a contact region 353 at a surface of a semiconductor substrate 300. The transistor, with the exception of the contact region, is covered with a first material 362, 366 and the first material and the contact region are then covered with a layer of a second material 370. The portion of the second layer covering the contact region is removed to expose the contact region so that the removal of the portions of the second layer forms a cavity characterized by a bottom formed of the first material and sides formed of the second material. Further steps in the process include forming a first conductive layer 372 in the cavity to contact the contact region and conform to the bottom and sides, forming a dielectric layer 376 over the first conductive layer, and forming a second conductive layer 378 over the dielectric layer.

10. 发明公开

EP0844667A2 Storage capacitor for DRAM memory cell and the process of fabricating the same 失效
标题翻译： SpeicherkondensatorfürDRAM-Speicherzelle und Verfahren zur Herstellung desselben
公开(公告)号：EP0844667A2
公开(公告)日：1998-05-27
申请号：EP97119999.7
申请日：1997-11-14
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Niuya, Takayuki
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/76897 , H01L27/10817 , H01L27/10855 , H01L27/10894 , H01L28/91
摘要： A process for fabricating a crown-cell capacitor in a memory integrated circuit. The process includes the step of forming a transistor having a contact region 353 at a surface of a semiconductor substrate 300. The transistor, with the exception of the contact region, is covered with a first material 362, 366 and the first material and the contact region are then covered with a layer of a second material 370. The portion of the second layer covering the contact region is removed to expose the contact region so that the removal of the portions of the second layer forms a cavity characterized by a bottom formed of the first material and sides formed of the second material. Further steps in the process include forming a first conductive layer 372 in the cavity to contact the contact region and conform to the bottom and sides, forming a dielectric layer 376 over the first conductive layer, and forming a second conductive layer 378 over the dielectric layer.
摘要翻译：一种用于在存储器集成电路中制造冠电池电容器的工艺。该方法包括在半导体衬底300的表面形成具有接触区域353的晶体管的步骤。除接触区域外的晶体管被第一材料362,366覆盖，并且第一材料和接触区域然后被第二材料层370覆盖。覆盖接触区域的第二层的部分被去除以暴露接触区域，使得去除第二层的部分形成空腔，其特征在于由第一材料和由第二材料形成的侧面。该方法中的其它步骤包括在空腔中形成第一导电层372以接触接触区域并与底部和侧面相符合，在第一导电层上形成电介质层376，并在介电层上形成第二导电层378 。

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