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    • 4. 发明授权
    • Insulated metal substrates and process for the production thereof
    • 绝缘金属基板及其制造方法
    • US5230788A
    • 1993-07-27
    • US828679
    • 1992-01-31
    • Jacques RabietPhilippe GimenezRemi GuillouClaude Drapier
    • Jacques RabietPhilippe GimenezRemi GuillouClaude Drapier
    • C25D11/12H05K1/05H05K3/38H05K3/44
    • C25D11/12H05K1/053H05K3/44H05K2201/0116H05K2203/0315H05K2203/1147H05K3/386
    • The disclosure relates to insulated metal substrates and to a process for producing these substrates. These substrates have an aluminium base, an insulant constituted by an alumina film obtained by anodizing at least one of the faces of said base and at least one metal film which is to be transformed by chemical etching into a network of conductors. The alumina film is formed by a uniform compact zone adhering to the aluminium and having a thickness in excess of 500 nm and a porous layer with a rough outer surface. The process of making these substrates includes a step during which at least one of the faces of the aluminium base undergoes a treatment in a porous anodization layer forming bath and then in a barrier anodization layer forming bath. The invention is used in the production of substrates for single face, double face, with metallized holes, and multilayer conductive circuits. The substrates produced have a planar or non-planar configuration, and may also have resistive networks.
    • 本公开涉及绝缘金属基板和制造这些基板的方法。 这些基材具有铝基材,由氧化铝膜构成的绝缘体,该氧化铝膜通过阳极氧化所述基材的至少一个面和通过化学蚀刻转化为导体网络的至少一个金属膜而获得。 氧化铝膜由粘附在铝上的厚度超过500nm的均匀致密区域和具有粗糙外表面的多孔层形成。 制造这些基材的方法包括以下步骤:铝基材的至少一个表面在多孔阳极氧化层形成浴中进行处理,然后在阻挡阳极氧化层形成浴中进行处理。 本发明用于单面,双面,带有金属化孔的基板和多层导电电路的制造。 所生产的基板具有平面或非平面配置,并且还可以具有电阻网络。