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1. 发明专利

JP2008266102A Method for manufacturing silicon single crystal by fz (floating zone) method 有权
标题翻译：通过FZ（浮动区）方法制造硅单晶的方法
公开(公告)号：JP2008266102A
公开(公告)日：2008-11-06
申请号：JP2007115009
申请日：2007-04-25
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , UEDA RYOSUKE , SATO TOSHIYUKI , SUGITA YOSHIKANE
IPC分类号： C30B29/06 , C30B13/26
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal by using an FZ method, the crystal having uniform resistivity distribution in a crystal plane as the important characteristic of the product.
SOLUTION: The method for manufacturing a silicon single crystal by using the FZ method includes partially heating and melting a source silicon crystal material with an induction heating coil to form a melting zone and moving the melting zone to grow a single crystal, wherein the single crystal is grown while rotating both of the source silicon crystal material and the single crystal and alternately changing the rotation direction of the single crystal in a normal direction and in a reverse direction. The ratio of the normal rotation angle in the normal rotation to the reverse rotation angle in the reverse rotation is 0.1 to 0.6, and the rotation speed in the normal or reverse rotation is controlled to 10 to 30 rpm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了通过使用FZ法提供一种制造单晶硅的方法，该晶体在晶面中具有均匀的电阻率分布，作为产品的重要特性。解决方案：通过使用FZ方法制造单晶硅的方法包括用感应加热线圈部分地加热和熔化源硅晶体材料以形成熔化区并移动熔融区以生长单晶，其中单晶在同时旋转源硅晶体材料和单晶体的同时生长，并且在正常方向和相反方向上交替地改变单晶的旋转方向。正转中的正转旋转角与反转中的反转角的比例为0.1〜0.6，将正转或反转的转速控制在10〜30rpm。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008087984A Method for production of silicon single crystal, apparatus for controlling production of silicon single crystal, and program 有权
标题翻译：生产硅单晶的方法，用于控制硅单晶生产的设备和程序
公开(公告)号：JP2008087984A
公开(公告)日：2008-04-17
申请号：JP2006267287
申请日：2006-09-29
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , SATO TOSHIYUKI
IPC分类号： C30B29/06 , C30B13/12
CPC分类号： C30B13/12 , C30B29/06 , Y10T117/1008
摘要： PROBLEM TO BE SOLVED: To provide a silicon single crystal-producing method which enables production of a grown crystal having a resistivity distribution equivalent to that of the single crystal product obtained by a conventional FZ method even when a silicon crystal having been pulled by a CZ method is used. SOLUTION: In the silicon single crystal-producing method using an FZ method, a P-type or N-type silicon crystal pulled by a CZ method is used as a raw material 6, and while supplying an impurity having the same conductivity type as that of the raw material 6 by a gas doping apparatus 4, the material is recrystallized by an induction heating coil 3 to prepare a single crystal product 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种硅单晶制造方法，其能够生产具有与通过常规FZ法获得的单晶产品的电阻率分布相当的电阻率分布的生长晶体，即使当被拉取的硅晶体使用CZ方法。解决方案：在使用FZ法的硅单晶制造方法中，使用通过CZ法拉伸的P型或N型硅晶体作为原料6，并且在提供具有相同导电性的杂质的同时通过气体掺杂装置4类型与原料6类似，材料通过感应加热线圈3重结晶以制备单晶产品8.版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010132470A Method for producing silicon single crystal by fz method 有权
标题翻译：通过FZ方法生产硅单晶的方法
公开(公告)号：JP2010132470A
公开(公告)日：2010-06-17
申请号：JP2008307620
申请日：2008-12-02
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by using an FZ (Floating Zone) method. SOLUTION: The method for producing a silicon single crystal by using the FZ method includes using a P-type silicon crystal formed by a CZ method as a raw material rod, and then forming an N-type silicon single crystal by performing gas-doping with an N-type impurity. At that time, the gas-doping amount of the impurity is adjusted so that the resistivity of the N-type silicon single crystal becomes lower than that of the raw material rod. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供通过使用FZ（浮动区）方法制造硅单晶的方法。解决方案：使用FZ方法制造单晶硅的方法包括使用通过CZ法形成的P型硅晶体作为原料棒，然后通过进行气体形成N型硅单晶用N型杂质掺杂。此时，调整杂质的气体掺杂量，使得N型硅单晶的电阻率低于原料棒的电阻率。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008266090A Silicon crystal material and method for manufacturing fz (floating-zone) silicon single crystal using the material 有权
标题翻译：硅晶体材料和使用材料制造FZ（浮动区）硅单晶的方法
公开(公告)号：JP2008266090A
公开(公告)日：2008-11-06
申请号：JP2007113904
申请日：2007-04-24
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , SHIRAISHI YUTAKA
IPC分类号： C30B29/06 , C30B13/00
CPC分类号： C30B29/06 , C30B13/00 , C30B15/206
摘要： PROBLEM TO BE SOLVED: To provide a silicon crystal material of a large diameter having a dislocation or a polycrystalline structure, which is a silicon crystal material having a dislocation or a polycrystalline structure manufactured by using a CZ method and which is used as a source rod for manufacturing a single crystal by an FZ (floating zone) method and has a grip part to be vertically suspended in an FZ furnace without causing cracks or fracture. SOLUTION: The silicon crystal material to be used for manufacturing a silicon single crystal by using the FZ method is a crystal manufactured by CZ method and having the dislocation or the polycrystalline structure, and comprises a seed crystal part, a shoulder part grown from the seed crystal part and having the diameter gradually increasing, a cylindrical straight barrel part, and a tail part having the diameter gradually decreasing. Before the material is taken out from the CZ furnace after the crystal growth in the furnace, the material is subjected to a slow cooling process of gradually cooling to a predetermined temperature for a predetermined time. The material shows residual stress of not more than 0.6 MPa at 300°C or lower. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有位错或多晶结构的大直径硅晶体材料，其是具有通过使用CZ方法制造的位错或多晶结构的硅晶体材料，并且其被用作用于通过FZ（浮动区域）方法制造单晶的源极棒，并且具有垂直悬挂在FZ炉中的夹持部分而不引起裂纹或断裂。解决方案：通过使用FZ法制造硅单晶的硅晶体材料是通过CZ法制造并具有位错或多晶结构的晶体，并且包括晶种部分，肩部部分生长从籽晶部分开始直径逐渐增大的圆筒直筒部分和直径逐渐减小的尾部。在炉中晶体生长之后将材料从CZ炉中取出之后，将材料进行缓慢冷却，逐渐冷却至预定温度一段预定时间。该材料在300℃以下显示不大于0.6MPa的残余应力。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2013144641A Silicon crystal material and method for producing the same 有权
标题翻译：硅晶体材料及其制造方法
公开(公告)号：JP2013144641A
公开(公告)日：2013-07-25
申请号：JP2013080816
申请日：2013-04-08
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , UEDA RYOSUKE
IPC分类号： C30B29/06 , C30B13/32
摘要： PROBLEM TO BE SOLVED: To provide a silicon crystal material, which is produced by a CZ method and used as a raw material rod in the production of a silicon single crystal by an FZ method, and has a part to be gripped so that it is loaded in a crystal growing furnace for the FZ method without the need of mechanical processing, and to provide a method for producing the silicon crystal material.SOLUTION: The silicon crystal material, produced by a CZ method and used in the production of a silicon single crystal by an FZ method, includes: a shoulder part 5 whose diameter is progressively enlarged; a columnar straight body part 2; a tail part 6 whose diameter is progressively reduced; and a part to be gripped 9 which is connected to a narrowed down part 4 formed at an upper part of the shoulder part 5, and is gripped when a pin, formed so as to be freely taken in and out of a gripping rod of a gripping tool, is inserted into a recessed part 9a of the part to be gripped 9 to allow loading into a furnace and single crystal growth, in the production of a silicon single crystal by the FZ method. The part to be gripped 9 is a seed crystal 9 used in the silicon crystal production process by the CZ method.
摘要翻译：要解决的问题：提供一种通过CZ法生产的硅晶体材料，用于通过FZ法生产硅单晶时用作原料棒，并且具有被夹持的部分，使得它是装载在用于FZ方法的晶体生长炉中，而不需要机械加工，并且提供一种制造硅晶体材料的方法。解决方案：通过CZ方法制造并用于生产硅单晶的硅晶体材料通过FZ法形成的晶体包括：直径逐渐扩大的肩部5; 柱状直体部2; 其直径逐渐减小的尾部6; 以及与肩部5的上部形成的狭窄部4连接的被夹持部9，并且当形成为能够自由地进出的夹持棒时被夹持，夹持工具插入到待夹持部件9的凹部9a中，以通过FZ方法生产硅单晶，从而能够加载到炉中并且单晶生长。待夹持的部分9是通过CZ方法在硅晶体生产过程中使用的晶种9。

6. 发明专利

JP2012101980A Apparatus for producing silicon single crystal, method for producing silicon single crystal, and method for processing induction heating coil 有权
标题翻译：用于生产硅单晶的装置，用于生产硅单晶的方法和用于加工感应加热线圈的方法
公开(公告)号：JP2012101980A
公开(公告)日：2012-05-31
申请号：JP2010252329
申请日：2010-11-10
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： NEZAKI MASARU , SOGO SHINJI
IPC分类号： C30B29/06 , C30B13/20
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon single crystal by an FZ (floating zone melting) method suppressible of a cooling water channel from being oxidized, a method for producing the silicon single crystal, and a method for processing an induction heating coil.SOLUTION: The apparatus for producing the silicon single crystal by the FZ method includes: a reactor for growing the silicon single crystal by the FZ method; a raw material holding tool stored in the reactor, and holding a raw silicon material serving as a raw material of the silicon single crystal; and the induction heating coil 4 stored in the reactor, and heating partially the raw silicon material to form a molten zone, and freezing the molten zone to grow the silicon single crystal. The induction heating coil 4 has, in its inside, the cooling water channel 44, through which cooling water for cooling the induction heating coil 4 flows, and which is formed with a coating film 45 for preventing the oxidation by the cooling water.
摘要翻译：要解决的问题：提供一种通过抑制冷却水通道被氧化的FZ（浮动区域熔融）方法制造单晶硅的装置，制造单晶硅的方法和加工感应加热线圈。解决方案：通过FZ方法制造硅单晶的装置包括：通过FZ法生长硅单晶的反应器; 储存在反应器中的原料保持工具，并保持作为硅单晶原料的原料硅材料; 和感应加热线圈4，并且部分地加热原料硅以形成熔融区，并使熔融区冷冻以使硅单晶生长。感应加热线圈4在其内部具有用于冷却感应加热线圈4的冷却水流过的冷却水通道44，并且形成有用于防止冷却水氧化的涂膜45。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2013139388A Silicon crystal material and method for producing the same 有权
标题翻译：硅晶体材料及其制造方法
公开(公告)号：JP2013139388A
公开(公告)日：2013-07-18
申请号：JP2013080817
申请日：2013-04-08
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , UEDA RYOSUKE
IPC分类号： C30B29/06 , C30B13/32
摘要： PROBLEM TO BE SOLVED: To provide a silicon crystal material which is produced by the CZ method, used as a raw material rod for producing a silicon single crystal by the FZ method and has a gripped portion that enables loading of the silicon crystal material into a crystal growth furnace employing the FZ method without requiring mechanical processing, and a method for producing the same.SOLUTION: The silicon crystal material is produced by the CZ method and used for producing a silicon single crystal by the FZ method. The silicon crystal material has: a shoulder portion 5 that gradually grows in diameter; a cylindrical straight body 2; a tail portion 6 that gradually reduces in diameter; and a gripped portion 8 that is formed above the shoulder portion 5 or below the tail portion 6, gripped by being hooked by claws of a gripper from the side surface when producing a silicon single crystal by the FZ method, and enables loading of the silicon crystal material into a furnace and growth of a single crystal. The gripped portion 8 is formed in the silicon crystal production process by the CZ method in a similar way as in the shoulder portion 5, the straight body portion 2, and the tail portion 6.
摘要翻译：要解决的问题：提供一种通过CZ法生产的硅晶体材料，其用作通过FZ法制造单晶硅的原料棒，并且具有能够将硅晶体材料装载到采用FZ法而不需要机械加工的晶体生长炉及其制造方法。解决方案：硅晶体材料通过CZ法制造，用于通过FZ法制造单晶硅。硅晶体材料具有：直径逐渐增长的肩部5; 圆柱形直体2; 直径逐渐减小的尾部6; 以及形成在肩部5上方或尾部6下方的夹持部8，通过FZ方法制造硅单晶时，由夹持器的爪从侧面钩住，并且能够加载硅将晶体材料加入炉中并生长出单晶。夹紧部分8以与肩部5，直体部分2和尾部6相同的方式通过CZ方法在硅晶体生产过程中形成。

8. 发明专利

JP2012106892A Method for manufacturing silicone single crystal, apparatus for manufacturing silicone single crystal, and method for calculating resistivity distribution of silicone single crystal 有权
标题翻译：制造硅胶单晶的方法，制造硅胶单晶的装置和计算硅单晶的电阻分布的方法
公开(公告)号：JP2012106892A
公开(公告)日：2012-06-07
申请号：JP2010257974
申请日：2010-11-18
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , SUGITA YOSHIKANE
IPC分类号： C30B29/06 , C30B13/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicone single crystal, which can more securely manufacture a single crystal whose resistivity distribution in the longitudinal direction is the same.SOLUTION: The method for manufacturing a silicone single crystal by the FZ method of manufacturing the single crystal 10 having a straight barrel part 10a having the same diameter and diameter-expansion/contraction parts 10b, 10c whose diameters expand or contract by heating a raw silicon material 9 to from a melt zone 11, and solidifying the melt zone 11 while supplying a dopant to the melt zone 11, comprises a straight barrel part-formation step of forming the straight barrel part 10a while supplying the dopant to the melt zone 11 corresponding to the straight barrel part 10a, and a diameter expansion/contraction part-formation step of forming the diameter-expansion/contraction parts 10b, 10c while supplying the dopant to the melt zone 11 corresponding to the diameter-expansion/contraction parts 10b, 10c before and/or after the straight barrel part-formation step, wherein the supply condition of the dopant in the diameter expansion/contraction part-formation step is altered to the supply condition of the dopant in the straight barrel part-formation step, based on a predetermined alteration condition.
摘要翻译：要解决的问题：提供一种可以更可靠地制造在长度方向上的电阻率分布相同的单晶的硅酮单晶的制造方法。解决方案：通过制造单晶10的单晶10制造方法，该单晶10具有直径和直径 - 扩张/收缩部分10b，10c的直筒部分10a，其直径通过加热直径膨胀或收缩来自熔融区域11的原料硅材料9，并且在熔融区域11中提供掺杂剂的同时使熔融区域11固化，包括形成直筒部分10a的直筒部分形成步骤，同时向熔体提供掺杂剂对应于直筒部分10a的区域11，以及直径扩张/收缩部分形成步骤，其形成直径扩张/收缩部分10b，10c，同时向对应于直径扩张/收缩部分的熔体区域11提供掺杂剂 10b，10c在直筒部分形成步骤之前和/或之后，其中直径膨胀/收缩部分形成步骤中的掺杂剂的供应状态改变为基于预定的改变条件，直筒形成步骤中的掺杂剂的供给条件。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008184374A Silicon crystal material and its manufacture process 有权
标题翻译：硅晶体及其制造工艺
公开(公告)号：JP2008184374A
公开(公告)日：2008-08-14
申请号：JP2007021044
申请日：2007-01-31
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , UEDA RYOSUKE
IPC分类号： C30B29/06 , C30B13/04
CPC分类号： C30B29/06 , C30B13/285 , C30B13/32 , C30B15/22
摘要： PROBLEM TO BE SOLVED: To provide a silicon crystal material which is manufactured by the CZ method, used for a material rod for the manufacture of silicon single crystals by the FZ method and has a support part with which the material is fitted in the crystal growth furnace of the FZ method without the need for machining. SOLUTION: The silicon crystal material manufactured by the CZ silicon crystal manufacturing method has a support part 3 formed in the CZ silicon crystal manufacturing method and serving for growing a single crystal in a crystal manufacturing apparatus by the FZ method as well as shoulder 5, straight body 2, tail 6. The seed crystal used for the silicon crystal manufacture by the CZ method constitutes the support part. Its manufacturing method comprises forming a protrusion or a dent around the outer circumference of body 2 or a dent on shoulder 5 of body 2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过CZ方法制造的硅晶体材料，其用于通过FZ方法制造单晶硅材料棒，并具有安装材料的支撑部分 FZ方法的晶体生长炉无需加工。解决方案：通过CZ硅晶体制造方法制造的硅晶体材料具有以CZ硅晶体制造方法形成的支撑部分3，用于通过FZ方法在晶体制造装置中生长单晶，并且肩部 5，直体2，尾部6.用于通过CZ方法制造的硅晶体的晶种构成支撑部分。其制造方法包括在主体2的外周或身体2的肩部5上形成突起或凹陷。（C）2008，JPO＆INPIT

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