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1. 发明申请

US20130134427A1 TRANSISTOR, DISPLAY, AND ELECTRONIC APPARATUS 有权
标题翻译：晶体管，显示器和电子设备
公开(公告)号：US20130134427A1
公开(公告)日：2013-05-30
申请号：US13678580
申请日：2012-11-16
申请人： Sony Corporation
发明人： Shinichi Ushikura , Akihiro Nomoto , Ryouichi Yasuda , Akira Yumoto , Nobuhide Yoneya , Shimpei Tsujikawa
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/283 , H01L29/786 , H01L33/0041 , H01L51/0097 , H01L51/0545 , H01L51/105
摘要： A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.
摘要翻译：晶体管包括：栅电极; 面向所述栅极的半导体层之间具有绝缘层; 电连接到所述半导体层的一对源极 - 漏极电极; 以及设置在所述一对源极 - 漏极电极和所述半导体层中的每一个之间的载流子的移动路径中的接触层，所述接触层具有被所述源极 - 漏极电极覆盖的端面。

2. 发明申请

US20150179707A1 TRANSISTOR, DISPLAY, AND ELECTRIC APPARATUS 有权
标题翻译：晶体管，显示器和电气设备
公开(公告)号：US20150179707A1
公开(公告)日：2015-06-25
申请号：US14611465
申请日：2015-02-02
申请人： Sony Corporation
发明人： Shinichi Ushikura , Akihiro Nomoto , Ryouichi Yasuda , Akira Yumoto , Nobuhide Yoneya , Shimpei Tsujikawa
IPC分类号： H01L27/28 , H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L27/283 , H01L29/786 , H01L33/0041 , H01L51/0097 , H01L51/0545 , H01L51/105
摘要： A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.
摘要翻译：晶体管包括：栅电极; 面向所述栅极的半导体层之间具有绝缘层; 电连接到所述半导体层的一对源极 - 漏极电极; 以及设置在所述一对源极 - 漏极电极和所述半导体层中的每一个之间的载流子的移动路径中的接触层，所述接触层具有被所述源极 - 漏极电极覆盖的端面。

3. 发明授权

US08981375B2 Transistor, display, and electronic apparatus 有权
标题翻译：晶体管，显示器和电子设备
公开(公告)号：US08981375B2
公开(公告)日：2015-03-17
申请号：US13678580
申请日：2012-11-16
申请人： Sony Corporation
发明人： Shinichi Ushikura , Akihiro Nomoto , Ryouichi Yasuda , Akira Yumoto , Nobuhide Yoneya , Shimpei Tsujikawa
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L33/00 , H01L29/786 , H01L51/10 , H01L51/05
CPC分类号： H01L27/283 , H01L29/786 , H01L33/0041 , H01L51/0097 , H01L51/0545 , H01L51/105
摘要： A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.
摘要翻译：晶体管包括：栅电极; 面向所述栅极的半导体层之间具有绝缘层; 电连接到所述半导体层的一对源极 - 漏极电极; 以及设置在所述一对源极 - 漏极电极和所述半导体层中的每一个之间的载流子的移动路径中的接触层，所述接触层具有被所述源极 - 漏极电极覆盖的端面。

4. 发明申请

US20140363919A1 SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US20140363919A1
公开(公告)日：2014-12-11
申请号：US14470734
申请日：2014-08-27
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/05 , H01L27/28 , H01L51/10
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，使有机绝缘材料与有机半导体材料。

5. 发明授权

US08866132B2 Semiconductor device and electronic unit 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US08866132B2
公开(公告)日：2014-10-21
申请号：US13671588
申请日：2012-11-08
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/00 , H01L27/32 , H01L27/28
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，使有机绝缘材料与有机半导体材料。

6. 发明申请

US20130119383A1 SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US20130119383A1
公开(公告)日：2013-05-16
申请号：US13671588
申请日：2012-11-08
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/10 , H01L29/786 , H01L21/336
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，有机绝缘材料使有机绝缘材料与有机半导体材料。

7. 发明授权

US09214496B2 Transistor, display, and electric apparatus 有权
标题翻译：晶体管，显示器和电器
公开(公告)号：US09214496B2
公开(公告)日：2015-12-15
申请号：US14611465
申请日：2015-02-02
申请人： Sony Corporation
发明人： Shinichi Ushikura , Akihiro Nomoto , Ryouichi Yasuda , Akira Yumoto , Nobuhide Yoneya , Shimpei Tsujikawa
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L27/28 , H01L33/00 , H01L29/786 , H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L27/283 , H01L29/786 , H01L33/0041 , H01L51/0097 , H01L51/0545 , H01L51/105
摘要： A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.
摘要翻译：晶体管包括：栅电极; 面向所述栅极的半导体层之间具有绝缘层; 电连接到所述半导体层的一对源极 - 漏极电极; 以及设置在所述一对源极 - 漏极电极和所述半导体层中的每一个之间的载流子的移动路径中的接触层，所述接触层具有被所述源极 - 漏极电极覆盖的端面。

8. 发明授权

US08999776B2 Semiconductor device and electronic unit 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US08999776B2
公开(公告)日：2015-04-07
申请号：US14470734
申请日：2014-08-27
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/00 , H01L51/05 , H01L51/10 , H01L27/28
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，有机绝缘材料使有机绝缘材料与有机半导体材料。

9. 发明申请

US20140070193A1 TRANSISTOR, METHOD OF MANUFACTURING TRANSISTOR, METHOD OF MANUFACTURING SEMICONDUCTOR UNIT, AND METHOD OF MANUFACTURING DISPLAY UNIT 审中-公开
标题翻译：晶体管，制造晶体管的方法，制造半导体单元的方法和制造显示单元的方法
公开(公告)号：US20140070193A1
公开(公告)日：2014-03-13
申请号：US14017791
申请日：2013-09-04
申请人： Sony Corporation
发明人： Akihiro Nomoto , Mao Katsuhara , Kenichi Kurihara
IPC分类号： H01L51/05
CPC分类号： H01L51/0512 , H01L51/0014
摘要： A method of manufacturing a transistor includes: forming a gate electrode; forming a laminated film of an organic insulating film and an organic semiconductor film with a gate insulating film therebetween, the laminated film being opposed to the gate electrode; and patterning the organic semiconductor film.
摘要翻译：制造晶体管的方法包括：形成栅电极; 在其间形成有机绝缘膜和有机半导体膜的层压膜，其间具有栅极绝缘膜，所述层叠膜与所述栅电极相对; 并构图有机半导体膜。

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