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1. 发明申请

US20040257312A1 Display device 有权
公开(公告)号：US20040257312A1
公开(公告)日：2004-12-23
申请号：US10813591
申请日：2004-03-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Jun Koyama , Hajime Kimura
IPC分类号： G09G003/30
CPC分类号： H01L27/3276 , G09G3/3225 , G09G3/3233 , G09G3/3275 , G09G2300/0417 , G09G2300/0426 , G09G2300/0465 , G09G2300/0842 , G09G2320/0209 , G09G2320/0214 , G09G2320/0223 , G09G2320/0233 , G09G2320/029 , G09G2330/02 , G09G2330/028 , H01L27/124 , H01L27/3244 , H01L29/78621 , H01L29/78627
摘要： There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix.

2. 发明申请

US20040239598A1 Electro luminescence display and method of testing the same 有权
标题翻译：电致发光显示及其测试方法
公开(公告)号：US20040239598A1
公开(公告)日：2004-12-02
申请号：US10866681
申请日：2004-06-15
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Jun Koyama
IPC分类号： G09G003/30
CPC分类号： G09G3/006 , G09G3/3233 , G09G3/3275 , G09G3/3291 , G09G2300/0426 , G09G2300/0809 , G09G2300/0842 , G09G2330/08 , G09G2330/12 , H01L27/32 , H01L27/3244 , Y10S345/904
摘要： To increase the proportion of the perfects to the whole lot of final products and to reduce the cost for active matrix EL display devices by checking the operation of a TFT substrate before depositing an EL material. A capacitor for testing is connected to a drain terminal of a driving TFT in a pixel portion to observe charging and discharging of the capacitor. Whether the driving TFT is normal or not is judged by the observation, so that the rejects can be removed before the manufacturing process is completed.
摘要翻译：通过在沉积EL材料之前检查TFT基板的工作，增加完美对最终产品的比例，降低有源矩阵EL显示装置的成本。用于测试的电容器连接到像素部分中的驱动TFT的漏极端子，以观察电容器的充电和放电。通过观察判断驱动TFT是否正常，从而可以在制造过程完成之前去除废品。

3. 发明申请

US20040201509A1 D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them 失效
标题翻译： D / A转换器电路，并入D / A转换电路的半导体器件及其制造方法
公开(公告)号：US20040201509A1
公开(公告)日：2004-10-14
申请号：US10823745
申请日：2004-04-14
申请人： Semiconductor Energy Laboratory Co., Ltd. , Sharp Kabushiki Kaisha
发明人： Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kazuhiko Miyata
IPC分类号： H03M001/66
CPC分类号： H01L27/0802 , H01L21/268 , H01L28/20 , H01L2924/0002 , H03M1/685 , H03M1/76 , H01L2924/00
摘要： D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which includes a plurality of resistors R0 to R7 connected in series with each other between reference voltages, and a plurality of switching elements S0 to S3 connected with each connection node of the resistors R0 to R7, wherein: each of the resistors R0 to R7 is a thin film element crystallized by linear laser irradiation; disposing all forming parts of the resistors configuring the resistor string 11 within a laser irradiation area 19; and crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with the same laser shot.
摘要翻译：通过提高构成电阻串的电阻器的电阻值的相对精度来提供具有更高精度的D / A转换。本发明的D / A转换器电路的制造方法包括以下步骤：形成电阻串11，其包括在参考电压之间串联连接的多个电阻器R0至R7，以及多个开关元件S0至 S3与电阻器R0至R7的每个连接节点连接，其中：电阻器R0至R7中的每一个是通过线性激光照射而结晶的薄膜元件; 将构成电阻器串11的电阻的所有形成部分设置在激光照射区域19内; 并用相同的激光照射结晶设置在激光照射区域内的电阻器的所有形成部分。

4. 发明申请

US20040197971A1 Process of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US20040197971A1
公开(公告)日：2004-10-07
申请号：US10831617
申请日：2004-04-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Hidehito Kitakado
IPC分类号： G09G003/36 , H01L021/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1274 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device having high operating performance and reliability is disclosed, and its fabrication process is also disclosed. In an n-channel type TFT 302, an Lov region 207 is disposed, whereby a TFT structure highly resistant to hot carriers is realized. Further, in an n-channel type TFT 304 forming a pixel portion, Loff regions 217 to 220 are disposed, whereby a TFT structure having a low OFF-current value is realized. In this case, in the Lov region, the n-type impurity element exists at a concentration higher than that of the Loff regions, and the whole of the n-type impurity region (b) which constitutes the Lov region is sufficiently activated by optical annealing, so that a good junction portion is formed between the n-type impurity region and the channel forming region.
摘要翻译：公开了具有高操作性能和可靠性的半导体器件，并且还公开了其制造工艺。在n沟道型TFT 302中，设置有Lov区域207，由此实现了对热载流子具有高耐受性的TFT结构。此外，在形成像素部的n沟道型TFT304中，设置Loff区域217〜220，由此实现具有低截止电流值的TFT结构。在这种情况下，在Lov区域中，n型杂质元素以比Loff区域高的浓度存在，构成Lov区域的n型杂质区域（b）全部被光学退火，使得在n型杂质区域和沟道形成区域之间形成良好的接合部分。

5. 发明申请

US20040178978A1 D/A conversion circuit and semiconductor device 失效
公开(公告)号：US20040178978A1
公开(公告)日：2004-09-16
申请号：US10810573
申请日：2004-03-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Jun Koyama , Mitsuaki Osame , Yukio Tanaka , Munehiro Azami , Naoko Yano , Shou Nagao
IPC分类号： G09G003/36
CPC分类号： H01L27/1214 , G09G3/20 , G09G3/2011 , G09G3/3677 , G09G3/3688 , G09G2310/0218 , G09G2310/027 , G09G2310/0297 , H01L21/84 , H01L29/04 , H03K17/6872 , H03K17/693 , H03M1/682 , H03M1/765
摘要： A D/A conversion circuit with a small area is provided. In the D/A conversion circuit, according to a digital signal transmitted from address lines of an address decoder, one of four gradation voltage lines is selected. A circuit including two N-channel TFTs is connected in series to a circuit including two P-channel TFT, and a circuit including the circuits connected in series to each other is connected in parallel to each of the gradation voltage lines. Further, an arrangement of the circuit including the two N-channel TFTs and the circuit including the two P-channel TFTs is reversed for every gradation voltage line. By this, the crossings of wiring lines in the D/A conversion circuit becomes small and the area can be made small.

6. 发明申请

US20040169723A1 Information processing system 失效
公开(公告)号：US20040169723A1
公开(公告)日：2004-09-02
申请号：US10799627
申请日：2004-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuji Kawasaki , Jun Koyama , Futoshi Ishi , Shunpei Yamazaki
IPC分类号： H04N007/14 , H04N001/40
CPC分类号： H04N7/147 , A61B3/145 , A61B5/165 , G06F3/013 , G06T7/00 , G06T11/00 , G06T11/60 , H04N5/2621 , H04N2005/2726
摘要： In an information processing system provided with a camera and a microphone, for transmitting and receiving information of a user to and from another information processing system through a transmission lime, image data of the user obtained by a camera is stored in a memory in advance. When one user communicates another user, image data of the one user is obtained by the camera and is synthesized with the image data stored in the memory in advance by image-processing. The clothes, hair, background, make-up etc. of the one user are made different to reality and the image data are transmitted to the another user in the communication.

7. 发明申请

US20040135181A1 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US20040135181A1
公开(公告)日：2004-07-15
申请号：US10742872
申请日：2003-12-23
申请人： Semiconductor Energy Laboratory Co., Ltd. a Japan corporation
发明人： Shunpei Yamazaki , Jun Koyama , Kazutaka Inukai
IPC分类号： H01L031/062
CPC分类号： H01L27/3272 , G09G3/30 , G09G3/3225 , G09G2300/0465 , G09G2300/0842 , G09G2310/0251 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/78621 , H01L29/78627
摘要： There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different from the layer on which a gate wiring (145) is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring (145) so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.
摘要翻译：提供了一种电子设备，其中防止了设备的劣化，并且在不使用黑色掩模的情况下提高了孔径比，并且不增加掩模的数量。在电子设备中，第一电极（113）设置在不同于其上设置有栅极布线（145）的层作为栅电极的另一层上，并且像素开关TFT的半导体层叠加在栅极布线（145），以便被遮光。因此，抑制了TFT的劣化，并且实现了高的开口率。

8. 发明申请

US20040094765A1 Semiconductor device and semiconductor display device 有权
公开(公告)号：US20040094765A1
公开(公告)日：2004-05-20
申请号：US10700198
申请日：2003-11-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L029/04
CPC分类号： H01L27/105 , G02F1/13454 , G09G3/3688 , G09G3/3696 , G09G2320/0276 , H01L27/11526 , H01L27/11546 , H01L27/1277 , H01L27/1296 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the memory are constituted by TFTs, and are integrally formed on the same insulating substrate. A semiconductor display device includes a pixel region in which a plurality of TFTs are arranged in matrix; a driver for switching the plurality of TFTs; a picture signal supply source for supplying a picture signal; a control circuit for carrying out gamma correction of the picture signal; and a memory for storing data used in the gamma correction of the picture signal. The plurality of TFTs, the driver, the control circuit, and the memory are integrally formed on the same insulating substrate.

9. 发明申请

US20040065882A1 Semiconductor device and process for production thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040065882A1
公开(公告)日：2004-04-08
申请号：US10453034
申请日：2003-06-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Hiroshi Shibata , Takeshi Fukunaga
IPC分类号： H01L031/0376 , H01L031/20 , H01L031/036 , H01L029/04
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
摘要翻译：本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。半导体在同一衬底上具有驱动电路和像素部分。其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。该结构在小面积上提供了大的存储电容。

10. 发明申请

US20040042707A1 Electronic circuit device 失效
标题翻译：电子电路装置
公开(公告)号：US20040042707A1
公开(公告)日：2004-03-04
申请号：US10649661
申请日：2003-08-28
申请人： Semiconductor Energy , Sharp Kabushiki Kaisha
发明人： Shigeki Imai , Tomoyuki Nagai , Shunpei Yamazaki , Jun Koyama
IPC分类号： G02B006/12
CPC分类号： G02B6/43
摘要： An object of the present invention is to provide an electronic circuit device capable of reducing the occurrence of electromagnetic waves associated with the propagation of a signal by utilizing light as a signal. The electronic circuit device has a transparent substrate (hereinafter written as a substrate) over which an optical sensor and an optical shutter and an electronic circuit composed of thin film transistors (TFTs) are formed. An optical signal is inputted from an external into the electronic circuit device, the optical signal is directly irradiated on the optical sensor over the substrate, and penetrates through the substrate, and inputted into an optical sensor over another substrate. The optical sensor converts the optical signal into an electronic signal, and the circuit over the substrate operates. A control signal controls the optical shutter, a light is inputted from the external into this optical shutter, and whether it is transmitted or it is interrupted is determined, whereby the signal is taken out.
摘要翻译：本发明的目的是提供一种能够通过利用光作为信号来减少与信号的传播相关联的电磁波的发生的电子电路装置。该电子电路装置具有形成由光电传感器和光学快门以及由薄膜晶体管（TFT）组成的电子电路的透明基板（以下称为基板）。光信号从外部输入到电子电路装置中，光信号直接照射在基板上的光学传感器上，并穿透基板，并在另一个基板上输入到光学传感器。光学传感器将光学信号转换成电子信号，并且衬底上的电路工作。控制信号控制光学快门，确定从外部将光输入该光学快门，以及是否发送或中断光信号，从而取出信号。

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