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1. 发明专利

JP2006074038A Field-effect transistor containing organic semiconductor layer 有权
标题翻译：包含有机半导体层的场效应晶体管
公开(公告)号：JP2006074038A
公开(公告)日：2006-03-16
申请号：JP2005242231
申请日：2005-08-24
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： RUSSEL DAVID , NEWSOME CHRISTOPHER , KUGLER THOMAS , LI SHUNPU
IPC分类号： H01L29/786 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L51/00 , H01L51/05 , H01L51/10
CPC分类号： H01L51/0545 , H01L51/0019 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0541 , H01L51/105
摘要： PROBLEM TO BE SOLVED: To provide a simpler separate means in place of a conventional means by providing the region of an implantation substance between the source electrode of a field-effect transistor and a functional organic semiconductor layer.
SOLUTION: The field-effect transistor (10) containing a metal or a carbon source electrode (14) and a functional organic semiconductor layer (28) is formed. A columnar implantation substance (48) passing through the layer (28) is extended to contact the electrode (14) and the layer (28). The column facilitates a charged carrier to move between the electrode (14) and the layer (28). The organic compounds such as 3-hexyl thiophene, polyallylamine, a poly(3,4-ethylene dioxy thiophene)-polystyrene sulfonic acid or polyaniline are desirable as the implantation substance.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过在场效应晶体管的源电极和功能性有机半导体层之间提供注入物质的区域来提供更简单的单独装置来代替常规手段。解决方案：形成含有金属或碳源电极（14）和功能性有机半导体层（28）的场效应晶体管（10）。穿过层（28）的柱状注入物质（48）被延伸以接触电极（14）和层（28）。该柱有助于带电载体在电极（14）和层（28）之间移动。有机化合物如3-己基噻吩，聚烯丙胺，聚（3,4-亚乙基二氧噻吩） - 聚苯乙烯磺酸或聚苯胺是所需的植入物质。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008288239A Patterning method and manufacturing method of tft 审中-公开
标题翻译： TFT的绘图方法和制造方法
公开(公告)号：JP2008288239A
公开(公告)日：2008-11-27
申请号：JP2007128859
申请日：2007-05-15
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： LI SHUNPU , TAM SIMON , MCCONNELL ANGELA , WEINING CHEN
IPC分类号： H01L21/336 , H01L21/288 , H01L21/306 , H01L21/3205 , H01L21/768 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To impart different patterns to a plurality of layers, respectively. SOLUTION: The patterning method includes a process (a) of executing emboss processing to a first layer of a multilayer structure having the first layer and a second layer by using an embossing tool with at least two portions of different heights so that a concave pattern having a shallow portion and a deep portion can be imparted to the first layer; a process (b) of etching the second layer via the first layer so that the base surface of the second layer may be exposed on the bottom of the deep portion; and a process (c) of etching the first layer so that the surface of the second layer may be exposed on the bottom of the shallow portion. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：分别向多个层赋予不同的图案。图案化方法包括：通过使用具有不同高度的至少两个部分的压花工具对具有第一层和第二层的多层结构的第一层执行压花加工的工艺（a），使得可以向第一层施加具有浅部和深部的凹形图案; 经由所述第一层蚀刻所述第二层的步骤（b），使得所述第二层的所述基面可能暴露在所述深部的底部; 以及蚀刻第一层的处理（c），使得第二层的表面可以暴露在浅部的底部。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008041729A Tft (thin film transistor), electric circuit, electron device and electronic instrument as well as these manufacturing method 有权
标题翻译： TFT（薄膜晶体管），电路，电子器件和电子仪器，如这些制造方法
公开(公告)号：JP2008041729A
公开(公告)日：2008-02-21
申请号：JP2006210595
申请日：2006-08-02
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： LI SHUNPU
IPC分类号： H01L21/336 , H01L21/28 , H01L21/288 , H01L29/417 , H01L29/786 , H01L51/05
CPC分类号： H01L29/4908 , H01L51/0005 , H01L51/0022 , H01L51/0037
摘要： PROBLEM TO BE SOLVED: To provide a technique for facilitating the manufacture of TFT through liquid process. SOLUTION: The manufacturing method comprises processes of: forming a gate electrode 12 on the predetermined site of a base layer 11; etching the base layer while employing the gate electrode 12 as etching mask so as to obtain two recesses 20a, 20b separated by the predetermined site; forming a dielectric layer 13 on the gate electrode 12 and two recesses 20a, 20b so as to obtain a dielectric layer 13 which fringes two recessed regions corresponding to two recesses 20a, 20b and a projected region corresponding to the predetermined site; arranging a function liquid containing a conductive material in the two recessed regions; heating the function liquid in two recess regions so as to form a source electrode 15a and a drain electrode 15b from the conductive material; and covering the source electrode 15a and the drain electrode 15b by the semiconductor layer 16. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种便于通过液体处理制造TFT的技术。解决方案：制造方法包括以下步骤：在基层11的预定位置上形成栅电极12; 在使用栅电极12作为蚀刻掩模的同时蚀刻基底层，以获得由预定位置分开的两个凹部20a，20b; 在栅电极12上形成电介质层13和两个凹槽20a，20b，以获得对应于两个凹部20a，20b的两个凹陷区域和对应于预定位置的投影区域的电介质层13。在所述两个凹陷区域中布置含有导电材料的功能液体; 在两个凹部区域中加热功能液，以从导电材料形成源电极15a和漏电极15b; 并且通过半导体层16覆盖源电极15a和漏电极15b。版权所有：（C）2008，JPO＆INPIT

4. 发明专利

JP2008027944A Method for forming surface energy difference bank, patterning method, bank structure, electronic circuit, electronic device, and electronic apparatus 有权
标题翻译：形成表面能量差异银行，图案方法，银行结构，电子电路，电子设备和电子设备的方法
公开(公告)号：JP2008027944A
公开(公告)日：2008-02-07
申请号：JP2006195190
申请日：2006-07-18
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： LI SHUNPU , NEWSOME CHRISTOPHER , CHU DAPING
IPC分类号： H01L21/28 , H01L21/288
CPC分类号： H01L27/101 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/288 , H01L27/11502 , H01L27/11585
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a surface energy difference bank composed of a self-organization molecular film uniformly even on a non-flat object plane by microcontact printing.
SOLUTION: The method for forming a surface energy difference bank comprises a step for arranging the material 30 of self-organization molecular film in contact regions 16, 17 and 18, consisting of a plurality of distal end faces 14a of a plurality of elastic elements 14 projecting from the proximal portion 12 of a stamp; and a step for transferring the material 30 from the contact regions 16, 17 and 18 to an object plane 24 by touching the contact regions 16, 17 and 18 to the object plane 24, such that the surface energy difference banks 34, 35 and 36 consisting of a plurality of dots 32 corresponding to the plurality of elastic elements 14 are obtained on the object plane 24.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过微接触印刷在非平坦物体平面上均匀地由自组织分子膜形成的表面能差异库的方法。解决方案：用于形成表面能量差分库的方法包括将自组织分子膜的材料30布置在接触区域16,17和18中的步骤，该接触区域16,17和18由多个的多个顶端面14a 从印模的近端部分12突出的弹性元件14; 以及通过将接触区域16,17和18接触到物平面24，将材料30从接触区域16,17和18转移到物平面24的步骤，使得表面能量差分组34,35和36 在物平面24上获得与多个弹性元件14对应的多个点32组成。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007149680A Photoelectric conversion element and its manufacturing method 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：JP2007149680A
公开(公告)日：2007-06-14
申请号：JP2006316011
申请日：2006-11-22
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： LI SHUNPU , ISHIDA MASAYA
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： H01G9/2031 , B82Y30/00 , H01G9/2068 , H01L51/0004 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a pattern structure in manufacturing an electrochemical cell, including a soft contact printing and an ink-jet printing. SOLUTION: The manufacturing method of a patterned structure in manufacturing a pigment sensitized solar cell includes a process in which a first conductive layer is laminated on a base plate, a process in which a patterned template layer is formed on the first conductive layer by a soft contact printing and, as a result, a pattern array of neighboring cells arranged with a gap each other is formed on the first conductive layer, and a process in which a metal oxide particle dispersed solution is ink-jet printed on a plurality of cells among the pattern array of the above neighboring cells to form a patterned metal oxide layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造电化学电池的图案结构的制造方法，包括软接触印刷和喷墨印刷。解决方案：在制造颜料敏化太阳能电池中的图案化结构的制造方法包括其中第一导电层层压在基板上的工艺，其中在第一导电层上形成图案化模板层的工艺通过软接触印刷，结果，在第一导电层上形成有彼此间隔开的相邻单元的图案阵列，并且将金属氧化物颗粒分散溶液喷墨印刷在多个上的工序的上述相邻单元的图案阵列之间的单元以形成图案化的金属氧化物层。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007083723A Production process of substrate which has areas different in hydrohilicity and lipophilicity in one surface 有权
标题翻译：在一个表面上在水合物和亲油性中不同的基质的生产过程
公开(公告)号：JP2007083723A
公开(公告)日：2007-04-05
申请号：JP2006254972
申请日：2006-09-20
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： KUGLER THOMAS , LI SHUNPU , NEWSOME CHRISTOPHER , RUSSEL DAVID
IPC分类号： B32B9/00 , C08J7/06 , C08J7/12 , H01L33/00 , H01L51/00 , H05K1/00 , H05K3/12
CPC分类号： H05K3/125 , B82Y20/00 , B82Y30/00 , H01L51/0004 , H01L51/0012 , H01L51/0097 , H01L2251/105 , H01L2251/5369 , H05K1/0393 , H05K3/1208 , H05K2203/013 , H05K2203/095 , H05K2203/097 , H05K2203/1173 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a substrate production process, in which areas of substantially different wettability are formed properly on a flexible substrate. SOLUTION: The invention relates to the substrate with uneven wettability on its surface. the uneven wettability consists of neighboring areas different in hydrophilicity and/or lipophilicity. The invention also relates to the production process of such substrates, and micro electronic components where electric functional materials are deposited on such substrates. The invention provides the production process of the flexible substrate with uneven wettability. The production process comprises a step to form a first area comprising an inorganic material on a substrate precursor so as to form the substrate, wherein at least a part of the inorganic material is exposed on the surface of the substrate, and the first area makes a pattern on the substrate precursor. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板制造工艺，其中在柔性基板上适当地形成基本上不同的润湿性的区域。解决方案：本发明涉及在其表面上具有不均匀润湿性的基材。不均匀的润湿性由亲水性和/或亲油性不同的相邻区域组成。本发明还涉及这种基板的制造方法以及其中电功能材料沉积在这种基板上的微电子部件。本发明提供了具有不均匀润湿性的柔性基材的生产方法。该制造方法包括在基板前体上形成包含无机材料的第一区域以形成基板的步骤，其中至少一部分无机材料暴露在基板的表面上，并且第一区域形成图案在基板前体上。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006332636A Method of forming hetero-junction in organic semiconductor polymer 有权
标题翻译：在有机半导体聚合物中形成异质结的方法
公开(公告)号：JP2006332636A
公开(公告)日：2006-12-07
申请号：JP2006123033
申请日：2006-04-27
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NEWSOME CHRISTOPHER , KUGLER THOMAS , LI SHUNPU , RUSSEL DAVID
IPC分类号： H01L51/40 , B41M5/00 , B41M5/50 , B41M5/52 , H01L21/368 , H01L29/786 , H01L33/00 , H01L51/00 , H01L51/05 , H01L51/42 , H01L51/50 , H05B33/10
CPC分类号： H01L51/0005 , H01L51/0007 , H01L51/424 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a hetero-junction of adjacent first and second organic semiconductor polymer layers.
SOLUTION: First, a first organic semiconductor polymer layer 12 is formed on a substrate 10. Then, the solution of a film formation material is deposited on it. Since the first organic semiconductor polymer 12 is insoluble to this solution, it is not influenced. A temporary film 14 having a thickness of 20 nm is formed by drying. Then, the solution 16 of the second organic semiconductor polymer dissolved in an organic solvent is deposited on the above temporary film 14, and is made to dry. The thickness of the above temporary film 14 is set so that a part for the thickness may be permeated between the time durations by which the solution 15 of the above second organic semiconductor polymer is dried. Thereby, the temporary film 14 is decomposed without giving a damage to the first organic semiconductor polymer layer 12, and the second organic semiconductor layer 19 is formed so that it may touch on the above first organic semiconductor polymer layer 12.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供形成相邻的第一和第二有机半导体聚合物层的异质结的方法。解决方案：首先，在基板10上形成第一有机半导体聚合物层12.然后，在其上沉积成膜材料的溶液。由于第一有机半导体聚合物12不溶于该溶液，因此不受影响。通过干燥形成厚度为20nm的临时膜14。然后，将溶解在有机溶剂中的第二有机半导体聚合物溶液16沉积在上述临时膜14上，使其干燥。上述临时膜14的厚度被设定为使得可以在上述第二有机半导体聚合物的溶液15干燥的时间间隔之间渗透厚度部分。因此，临时膜14不会对第一有机半导体聚合物层12造成损害而分解，并且形成第二有机半导体层19，使得其可以接触上述第一有机半导体聚合物层12。版权所有：（C）2007，JPO＆INPIT

8. 发明专利

JP2006041495A Method of manufacturing semiconductor element from dispersed particle of semiconductor 有权
标题翻译：从半导体分散粒子制造半导体元件的方法
公开(公告)号：JP2006041495A
公开(公告)日：2006-02-09
申请号：JP2005180203
申请日：2005-06-21
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： KUGLER THOMAS , NEWSOME CHRISTOPHER , RUSSEL DAVID , LI SHUNPU
IPC分类号： H01L29/786 , H01L21/208 , H01L21/336 , H01L21/368 , H01L51/00 , H01L51/05 , H01L51/50 , H05B33/10
CPC分类号： H01L21/02568 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L51/0003 , H01L51/0037 , H01L51/0053 , H01L51/007 , H01L51/0545
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor elements from dispersed particles of a semiconductor.
SOLUTION: This invention is a method of manufacturing semiconductor elements, such as films or the like. The method comprises a first process (i) of laminating a suspension containing first semiconductor particles and a solution containing a second semiconductor or its precursor on the surface of a board so as to produce a mixture containing the first semiconductor particles suspended in a liquid phase containing the second semiconductor or its precursor on the board and a second process (ii) of solidifying the mixture so as to form semiconductor elements containing the first semiconductor particles in a second semiconductor matrix which electrically connects the first semiconductor adjacent particles together. The first and second semiconductor are of the same conductivity type and formed of the same or other materials. The semiconductor elements are high enough in bulk charge carrier mobility and suitable for use in a microprocessor or other high-performance electric devices even when they are not subjected to sintering after lamination.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供从半导体的分散颗粒制造半导体元件的方法。解决方案：本发明是制造诸如膜等的半导体元件的方法。该方法包括在板的表面上层压包含第一半导体颗粒的悬浮液和含有第二半导体或其前体的溶液的第一工艺（i），以产生包含悬浮在液相中的第一半导体颗粒的混合物第二半导体或其前体，以及使混合物固化的第二工艺（ii），以便在将第一半导体相邻颗粒电连接在一起的第二半导体矩阵中形成包含第一半导体颗粒的半导体元件。第一和第二半导体具有相同的导电类型并且由相同或其它材料形成。半导体元件在体积电荷载流子迁移率方面足够高，并且即使在层压之后它们不经历烧结时也适用于微处理器或其它高性能电子器件。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2008130866A Surface reforming method and pattern formation method 审中-公开
标题翻译：表面改质方法和图案形成方法
公开(公告)号：JP2008130866A
公开(公告)日：2008-06-05
申请号：JP2006315193
申请日：2006-11-22
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NEWSOME CHRISTOPHER , LI SHUNPU , CHU DAPING
IPC分类号： H01L21/3205 , B05D1/36 , B05D1/40 , B05D3/10 , H01L21/288 , H01L21/312 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/76826 , H01L21/288 , H01L21/31058
摘要： PROBLEM TO BE SOLVED: To prepare a pattern on a target object using an inkjet printing method, the target object having a nonflat surface. SOLUTION: The surface reforming method includes a step A of forming a BCB layer on a surface of a target object, and a step B of exposing the top surface of the BCB to a CF 4 plasma. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2007243192A Method for manufacturing electronic device and embossing tool 有权
标题翻译：制造电子设备和制造工具的方法
公开(公告)号：JP2007243192A
公开(公告)日：2007-09-20
申请号：JP2007056695
申请日：2007-03-07
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： LI SHUNPU , NEWSOME CHRISTOPHER , RUSSEL DAVID , KUGLER THOMAS
IPC分类号： H01L21/288 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L51/0005 , H01L21/0337 , H01L51/0037 , H01L2251/105 , Y10T156/1039
摘要： PROBLEM TO BE SOLVED: To provide a manufacture of a capacitor structure having good insulating property, and to provide ink-jet printing and embossing technology which can form a short channel in TFT manufacturing process. SOLUTION: The method for manufacturing an electronic device has a step of embossing surfaces of work-pieces 200, 202 using an embossing tool 204, and forming a microstructure having at least two levels of thickness contrast on the work-pieces, and a step of depositing fluid 208 containing a functional material onto the microstructure. Preferably, the step of depositing the fluid 208 comprises the ink-jet printing, and the embossing tool 204 for creating the microstructure on the work-pieces 200, 202 comprises a first surface and steps of at least two different heights relative to the first surface. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有良好绝缘性能的电容器结构的制造，并提供可在TFT制造工艺中形成短沟道的喷墨印刷和压花技术。解决方案：电子设备的制造方法具有使用压花工具204对工件200,202的表面进行压花，并且在工件上形成具有至少两层厚度对比度的微观结构的步骤，以及将包含功能材料的流体208沉积到微结构上的步骤。优选地，沉积流体208的步骤包括喷墨打印，并且用于在工件200,202上形成微结构的压花工具204包括第一表面和相对于第一表面的至少两个不同高度的步骤。版权所有（C）2007，JPO＆INPIT

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