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1. 发明申请

US20070134435A1 Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films 审中-公开
标题翻译：改善低介电常数薄膜的灰化/湿蚀刻损伤电阻和积分稳定性的方法
公开(公告)号：US20070134435A1
公开(公告)日：2007-06-14
申请号：US11304847
申请日：2005-12-13
申请人： Sang Ahn , Alexandros Demos , Hichem M'Saad
发明人： Sang Ahn , Alexandros Demos , Hichem M'Saad
IPC分类号： C23C16/00 , C08J7/04
CPC分类号： C23C16/401 , C08J7/065 , C08J7/08 , C08J7/12 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633
摘要： A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.
摘要翻译：提供了一种从包含两种有机硅化合物的混合物在室中的衬底上沉积低介电常数膜的方法。该混合物还可包括烃化合物和氧化气体。第一有机硅化合物每Si原子平均具有一个或多个Si-C键。第二有机硅化合物具有比Si原子中Si-C键的平均数大于第一有机硅化合物中每Si原子的Si-C键的平均数。低介电常数膜具有良好的等离子/湿蚀刻损伤电阻，良好的机械性能和期望的介电常数。

2. 发明申请

US20080099920A1 MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS 审中-公开
标题翻译：低K纳米多孔膜的多段固化
公开(公告)号：US20080099920A1
公开(公告)日：2008-05-01
申请号：US11876668
申请日：2007-10-22
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： H01L23/538 , B32B3/00
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

3. 发明申请

US20050230834A1 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US20050230834A1
公开(公告)日：2005-10-20
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： C23C16/40 , C23C16/50 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/469 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

4. 发明申请

US20060289795A1 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：US20060289795A1
公开(公告)日：2006-12-28
申请号：US11383383
申请日：2006-05-15
申请人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
发明人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , H01J2237/2001
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。在一个实施例中，真空室包括阴极，阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

5. 发明申请

US20060192150A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20060192150A1
公开(公告)日：2006-08-31
申请号：US11414649
申请日：2006-04-27
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

6. 发明申请

US20060272772A1 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 有权
标题翻译：真空反应室与X灯加热器
公开(公告)号：US20060272772A1
公开(公告)日：2006-12-07
申请号：US11425974
申请日：2006-06-22
申请人： Amir Al-Bayati , Lester D'Cruz , Alexandros Demos , Dale Dubois , Khaled Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Rocha-Alvarez , Ashish Shah , Takashi Shimizu
发明人： Amir Al-Bayati , Lester D'Cruz , Alexandros Demos , Dale Dubois , Khaled Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Rocha-Alvarez , Ashish Shah , Takashi Shimizu
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

7. 发明申请

US20060027764A1 Methodology for determining electron beam penetration depth 失效
标题翻译：确定电子束穿透深度的方法
公开(公告)号：US20060027764A1
公开(公告)日：2006-02-09
申请号：US11006305
申请日：2004-12-06
申请人： Josephine Liu , Alexandros Demos , Hichem M'Saad
发明人： Josephine Liu , Alexandros Demos , Hichem M'Saad
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/32935
摘要： The Grunn equation: Depth = 0.046 ⁢ ⁢ ( V acc ) n ρ is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.
摘要翻译： Grunn方程式： $深度=0.046（Vacc）rho被修改以准确地预测电子束穿透到目标材料中的深度。形成两层叠层，其包含覆盖在比目标材料更大的对电子束敏感性的检测材料上的目标材料的厚度。目标材料暴露于不同能量的电子束辐射，其中阈值能量导致检测材料的物理性质改变低于标记对应于目标材料厚度的穿透深度的预定值。利用阈值能量（Vacc），目标材料厚度（Depth）和已知目标材料密度（rho），计算Grunn方程的数值“n”以适应实验结果。如此修改，Grunn方程准确地预测了不同能量的电子束穿透到目标材料中的深度。$

8. 发明申请

US20050239293A1 POST TREATMENT OF LOW K DIELECTRIC FILMS 有权
标题翻译：低K电介质膜的后处理
公开(公告)号：US20050239293A1
公开(公告)日：2005-10-27
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
IPC分类号： H01L21/314 , H01L21/316 , H01L21/4763 , H01L21/26 , H01L21/31 , H01L21/324 , H01L21/42 , H01L21/469 , H01L21/477
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

9. 发明申请

US20050224722A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20050224722A1
公开(公告)日：2005-10-13
申请号：US11002600
申请日：2004-12-01
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

10. 发明申请

US20060231524A1 TECHNIQUES FOR THE USE OF AMORPHOUS CARBON (APF) FOR VARIOUS ETCH AND LITHO INTEGRATION SCHEMES 失效
标题翻译：使用不规则碳（APF）进行各种ETCH和LITHO积分方案的技术
公开(公告)号：US20060231524A1
公开(公告)日：2006-10-19
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Christopher Bencher
发明人： Wei Liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Christopher Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

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