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1. 发明申请

WO2008005412A2 ULTRASHALLOW SEMICONDUCTOR CONTACT BY OUTDIFFUSION FROM A SOLID SOURCE 审中-公开
标题翻译：超声波半导体与固体源输出接触
公开(公告)号：WO2008005412A2
公开(公告)日：2008-01-10
申请号：PCT/US2007/015321
申请日：2007-06-29
申请人： SANDISK 3D LLC , HERNER, S., Brad , RADIGAN, Steven, J.
发明人： HERNER, S., Brad , RADIGAN, Steven, J.
CPC分类号： H01L27/1021 , H01L21/02425 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/2254
摘要： The surface of a conductive layer such as a conductive nitride, a conductive suicide, a metal, or metal alloy or compound, is exposed to a dopant gas which provides an n-type or p-type dopant. The dopant gas may be included in a plasma. Semiconductor material, such as silicon, germanium, or their alloys, is deposited directly on the surface which has been exposed to the dopant gas. During and subsequent to deposition, dopant atoms diffuse into the deposited semiconductor, forming a thin heavily doped region and making a good ohmic contact between the semiconductor material and the underlying conductive layer.
摘要翻译：诸如导电氮化物，导电硅化物，金属或金属合金或化合物的导电层的表面暴露于提供n型或p型掺杂剂的掺杂气体中。掺杂气体可以包括在等离子体中。诸如硅，锗或其合金的半导体材料直接沉积在暴露于掺杂气体的表面上。在沉积期间和之后，掺杂剂原子扩散到沉积的半导体中，形成薄的重掺杂区域，并在半导体材料和下面的导电层之间形成良好的欧姆接触。

2. 发明申请

WO2007143387A3 CONDUCTIVE HARD MASK TO PROTECT PATTERNED FEATURES DURING TRENCH ETCH 审中-公开
公开(公告)号：WO2007143387A3
公开(公告)日：2007-12-13
申请号：PCT/US2007/069450
申请日：2007-05-22
申请人： SANDISK 3D LLC , RADIGAN, Steven, J. , RAGHURAM, Usha , DUNTON, Samuel, V. , KONEVECKI, Michael, W.
发明人： RADIGAN, Steven, J. , RAGHURAM, Usha , DUNTON, Samuel, V. , KONEVECKI, Michael, W.
IPC分类号： H01L27/102 , H01L21/768
摘要： A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.

3. 发明申请

WO2009045347A1 METHOD FOR REDUCING PILLAR STRUCTURE DIMENSIONS OF A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：减少半导体器件的支柱结构尺寸的方法
公开(公告)号：WO2009045347A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/011215
申请日：2008-09-26
申请人： SANDISK 3D LLC , CHEN, Yung-tin , CHAN, Michael , POON, Paul , RADIGAN, Steven, J.
发明人： CHEN, Yung-tin , CHAN, Michael , POON, Paul , RADIGAN, Steven, J.
IPC分类号： H01L21/027 , G03F7/40
CPC分类号： H01L21/0274 , G03F7/40
摘要： A method creates pillar structures on a semiconductor wafer and includes the steps of providing a layer of semiconductor. A layer of photoresist is applied over the layer of semiconductor. The layer of photoresist is exposed with an initial pattern of light to effect the layer of photoresist. The photoresist layer is then etched away to provide a photoresist pattern to create the pillar structures. The photoresist pattern is processed in the layer of photoresist after the step of exposing the layer of photoresist and prior to the step of etching to reduce the dimensions of the photoresist pattern in the layer of photoresist.
摘要翻译：一种方法在半导体晶片上形成柱结构，并且包括提供半导体层的步骤。一层光致抗蚀剂被施加在半导体层上。光致抗蚀剂层用初始图案曝光以实现光致抗蚀剂层。然后蚀刻掉光致抗蚀剂层以提供光致抗蚀剂图案以产生柱结构。在曝光光致抗蚀剂层的步骤之前和蚀刻步骤之前，在光致抗蚀剂层中处理光致抗蚀剂图案，以减小光致抗蚀剂层中的光刻胶图案的尺寸。

4. 发明申请

WO2006105326A1 MASKING OF REPEATED OVERLAY AND ALIGNMENT MARKS TO ALLOW REUSE OF PHOTOMASKS IN A VERTICAL STRUCTURE 审中-公开
标题翻译：重复覆盖和对准标记的掩蔽以允许在垂直结构中重新使用光刻胶
公开(公告)号：WO2006105326A1
公开(公告)日：2006-10-05
申请号：PCT/US2006/011715
申请日：2006-03-31
申请人： SANDISK 3D, LLC , CHEN, Yung-Tin , PETTI, Christopher, J. , RADIGAN, Steven, J. , KUMAR, Tanmay
发明人： CHEN, Yung-Tin , PETTI, Christopher, J. , RADIGAN, Steven, J. , KUMAR, Tanmay
IPC分类号： G03F9/00 , G03F7/20 , H01L23/00
CPC分类号： H01L27/0688 , G03F7/70633 , G03F9/7084 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446
摘要： In formation of monolithic three dimensional memory arrays, a photomask may be used more than once. Reuse of a photomask creates second, third or more instances of reference marks used by the stepper to achieve alignment (alignment marks) and to measure alignment achieved (overlay marks) directly above prior instances of the same reference mark. The prior instances of the same reference mark may cause interference with the present instance of the reference mark, complicating alignment and measurement. Using the methods of the present invention, blocking structure is created vertically interposed between subsequent instances of the same reference mark, preventing interference.
摘要翻译：在形成单片三维存储器阵列时，可以使用光掩模多于一次。重新使用光掩模创建步进器使用的第二，第三或更多个参考标记实例，以实现对齐（对齐标记）并且直接在相同参考标记的先前实例之上测量对齐（覆盖标记）。相同参考标记的先前实例可能引起对参考标记的当前实例的干扰，使对准和测量复杂化。使用本发明的方法，垂直地插入相同参考标记的后续实例之间的阻挡结构，以防止干扰。

5. 发明公开

EP1866701A1 MASKING OF REPEATED OVERLAY AND ALIGNMENT MARKS TO ALLOW REUSE OF PHOTOMASKS IN A VERTICAL STRUCTURE 审中-公开
标题翻译：屏蔽反复叠加和校准标记，以使光掩模的回用垂直结构
公开(公告)号：EP1866701A1
公开(公告)日：2007-12-19
申请号：EP06748959.1
申请日：2006-03-31
申请人： Sandisk 3D, LLC
发明人： CHEN, Yung-Tin , PETTI, Christopher, J. , RADIGAN, Steven, J. , KUMAR, Tanmay
IPC分类号： G03F9/00 , G03F7/20 , H01L23/00
CPC分类号： H01L27/0688 , G03F7/70633 , G03F9/7084 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446
摘要： In formation of monolithic three dimensional memory arrays, a photomask may be used more than once. Reuse of a photomask creates second, third or more instances of reference marks used by the stepper to achieve alignment (alignment marks) and to measure alignment achieved (overlay marks) directly above prior instances of the same reference mark. The prior instances of the same reference mark may cause interference with the present instance of the reference mark, complicating alignment and measurement. Using the methods of the present invention, blocking structure is created vertically interposed between subsequent instances of the same reference mark, preventing interference.

6. 发明申请

WO2011008767A2 METHOD OF MAKING DAMASCENE DIODES USING SACRIFICIAL MATERIAL 审中-公开
标题翻译：使用牺牲材料制造大马士革二极管的方法
公开(公告)号：WO2011008767A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/041836
申请日：2010-07-13
申请人： SANDISK 3D LLC , MAKALA, Raghuveer , DUNTON, Vance , TANAKA, Yoichiro , MAXWELL, Steven , ZHANG, Tong , RADIGAN, Steven, J.
发明人： MAKALA, Raghuveer , DUNTON, Vance , TANAKA, Yoichiro , MAXWELL, Steven , ZHANG, Tong , RADIGAN, Steven, J.
IPC分类号： H01L27/10
CPC分类号： H01L27/1021 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/16
摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
摘要翻译：制造半导体器件的方法包括：在底层上形成包括种子材料的第一层;在第一层上形成包括牺牲材料的第二层，牺牲材料不同于种子将第一层和第二层图案化成多个分离的特征;在多个分离的特征之间形成绝缘填充材料;从分离的特征移除牺牲材料以在绝缘填充材料中形成多个开口; 种子材料暴露在多个开口中，并且在暴露的种子材料上在多个开口中生长半导体材料。

7. 发明申请

WO2009045348A1 LINER FOR TUNGSTEN/SILICON DIOXIDE INTERFACE IN MEMORY 审中-公开
标题翻译：内存中的TUNGSTEN /二氧化硅界面
公开(公告)号：WO2009045348A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/011216
申请日：2008-09-26
申请人： SANDISK 3D LLC , TANAKA, Yoichiro , RADIGAN, Steven, J. , RAGHURAM, Usha
发明人： TANAKA, Yoichiro , RADIGAN, Steven, J. , RAGHURAM, Usha
IPC分类号： H01L27/102
CPC分类号： H01L27/101 , H01L27/1021
摘要： A semiconductor wafer assembly includes a base of dielectric. A layer of silicon is deposited thereover. A metal hard mask is deposited over the silicon. A dielectric hard mask is deposited over the metal hard mask. Photoresist is deposited over the dielectric hard mask, whereby a plurality of sacrificial columns is formed from the layer of metal hard mask through the photoresist such that the sacrificial columns extend out from the silicon layer. An interface layer is disposed between the layer of conductive material and the layer of hard mask to enhance adhesion between each of the plurality of sacrificial columns and the layer of conductive material to optimize the formation of junction diodes out of the silicon by preventing the plurality of sacrificial columns from being detached from the layer of silicon prematurely due to the sacrificial columns peeling or falling off.
摘要翻译：半导体晶片组件包括电介质基体。一层硅沉积在其上。金属硬掩模沉积在硅上。电介质硬掩模沉积在金属硬掩模上。光致抗蚀剂沉积在电介质硬掩模上，由此通过光致抗蚀剂从金属硬掩模层形成多个牺牲柱，使得牺牲柱从硅层延伸出来。界面层设置在导电材料层和硬掩模层之间，以增强多个牺牲柱和导电材料层之间的粘附力，以通过防止多个牺牲柱由于牺牲柱脱落或脱落而过早地与硅层分离。

8. 发明申请

WO2010062515A1 METHOD OF MAKING PILLARS USING PHOTORESIST SPACER MASK 审中-公开
标题翻译：使用光电隔离膜掩模制作支柱的方法
公开(公告)号：WO2010062515A1
公开(公告)日：2010-06-03
申请号：PCT/US2009/061643
申请日：2009-10-22
申请人： SANDISK 3D LLC , CHEN, Yung-Tin , WANG, Chun-Ming , RADIGAN, Steven, J.
发明人： CHEN, Yung-Tin , WANG, Chun-Ming , RADIGAN, Steven, J.
IPC分类号： H01L21/033
CPC分类号： H01L21/0337
摘要： A method of making a device includes forming a first hard mask layer over an underlying layer, forming first features over the first hard mask layer, forming a first spacer layer over the first features, etching the first spacer layer to form a first spacer pattern and to expose top of the first features, removing the first features, patterning the first hard mask using the first spacer pattern as a mask to form first hard mask features, removing the first spacer pattern. The method also includes forming second features over the first hard mask features, forming a second spacer layer over the second features, etching the second spacer layer to form a second spacer pattern and to expose top of the second features, removing the second features, etching the first hard mask features using the second spacer pattern as a mask to form second hard mask features, and etching at least part of the underlying layer using the second hard mask features as a mask.
摘要翻译：制造器件的方法包括在下层上形成第一硬掩模层，在第一硬掩模层上形成第一特征，在第一特征上形成第一间隔层，蚀刻第一间隔层以形成第一间隔图案，为了暴露第一特征的顶部，去除第一特征，使用第一间隔图案作为掩模来图案化第一硬掩模以形成第一硬掩模特征，去除第一间隔图案。该方法还包括在第一硬掩模特征上形成第二特征，在第二特征上形成第二间隔层，蚀刻第二间隔层以形成第二间隔图案并暴露第二特征的顶部，去除第二特征，蚀刻第一硬掩模使用第二间隔图案作为掩模形成第二硬掩模特征，并且使用第二硬掩模特征作为掩模蚀刻至少部分下层。

9. 发明申请

WO2009134323A1 METHOD FOR FABRICATING SELF-ALIGNED COMPLIMENTARY PILLAR STRUCTURES AND WIRING 审中-公开
标题翻译：用于制作自对准的复合支柱结构和接线的方法
公开(公告)号：WO2009134323A1
公开(公告)日：2009-11-05
申请号：PCT/US2009/002400
申请日：2009-04-17
申请人： SANDISK 3D LLC , CHEN, Yung-Tin , WANG, Chun-Ming , RADIGAN, Steven, J. , PETTI, Christopher, J. , MAXWELL, Steven
发明人： CHEN, Yung-Tin , WANG, Chun-Ming , RADIGAN, Steven, J. , PETTI, Christopher, J. , MAXWELL, Steven
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139 , H01L27/1021
摘要： A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, selectively removing the spaced apart features, filling a space between a first sidewall spacer and a second sidewall spacer with a filler feature, selectively removing the sidewall spacers to leave a plurality of the filler features spaced apart from each other, and etching the at least one device layer using the filler feature as a mask.
摘要翻译：制造半导体器件的方法包括在衬底上形成至少一个器件层，在所述至少一个器件层上形成至少两个间隔的特征，在所述至少两个特征上形成侧壁间隔物，选择性地去除间隔开的特征，用填料特征填充第一侧壁间隔物和第二侧壁间隔物之间的空间，选择性地去除侧壁间隔物以留下彼此间隔开的多个填料特征，并使用填料特征来蚀刻至少一个器件层，如一个面具

10. 发明授权

EP2191508B1 LINER FOR TUNGSTEN/SILICON DIOXIDE INTERFACE IN MEMORY 失效转让
标题翻译： COVER用于在存储器中钨/二氧化硅接口
公开(公告)号：EP2191508B1
公开(公告)日：2011-06-29
申请号：EP08836145.6
申请日：2008-09-26
申请人： Sandisk 3D LLC
发明人： TANAKA, Yoichiro , RADIGAN, Steven, J. , RAGHURAM, Usha
IPC分类号： H01L21/8229 , H01L27/102
CPC分类号： H01L27/101 , H01L27/1021
摘要： A semiconductor wafer assembly includes a base of dielectric. A layer of silicon is deposited thereover. A metal hard mask is deposited over the silicon. A dielectric hard mask is deposited over the metal hard mask. Photoresist is deposited over the dielectric hard mask, whereby a plurality of sacrificial columns is formed from the layer of metal hard mask through the photoresist such that the sacrificial columns extend out from the silicon layer. An interface layer is disposed between the layer of conductive material and the layer of hard mask to enhance adhesion between each of the plurality of sacrificial columns and the layer of conductive material to optimize the formation of junction diodes out of the silicon by preventing the plurality of sacrificial columns from being detached from the layer of silicon prematurely due to the sacrificial columns peeling or falling off.

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