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1. 发明授权

US6159858A Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry 失效
标题翻译：含有锰氧化物的浆料和使用这种浆料的半导体器件的制造方法
公开(公告)号：US6159858A
公开(公告)日：2000-12-12
申请号：US884165
申请日：1997-06-27
申请人： Sadahiro Kishii , Ko Nakamura , Yoshihiro Arimoto , Akiyoshi Hatada , Rintaro Suzuki , Naruo Ueda , Kenzo Hanawa
发明人： Sadahiro Kishii , Ko Nakamura , Yoshihiro Arimoto , Akiyoshi Hatada , Rintaro Suzuki , Naruo Ueda , Kenzo Hanawa
IPC分类号： C03C19/00 , C09G1/02 , C09K3/14 , C09K13/04 , H01L21/02 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L21/302
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1409 , C09K3/1463 , C09K3/1472 , C09K13/04 , H01L21/02065 , H01L21/02074 , H01L21/31053 , H01L21/3212
摘要： A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
摘要翻译：浆料含有MnO 2或其它氧化锰作为磨料颗粒的主要成分。此外，公开了使用这种氧化锰研磨剂的研磨工艺和使用这种抛光工艺的半导体器件的制造工艺。

2. 发明授权

US5877089A Slurry containing manganese oxide 失效
标题翻译：含有氧化锰的浆料
公开(公告)号：US5877089A
公开(公告)日：1999-03-02
申请号：US14246
申请日：1998-01-27
申请人： Sadahiro Kishii , Akiyoshi Hatada , Rintaro Suzuki , Hiroshi Horie , Yoshihiro Arimoto , Ko Nakamura
发明人： Sadahiro Kishii , Akiyoshi Hatada , Rintaro Suzuki , Hiroshi Horie , Yoshihiro Arimoto , Ko Nakamura
IPC分类号： C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/463
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/463
摘要： A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
摘要翻译：浆料含有MnO 2或其它氧化锰作为磨料颗粒的主要成分。此外，公开了使用这种氧化锰研磨剂的研磨工艺和使用这种抛光工艺的半导体器件的制造工艺。

3. 发明授权

US5763325A Fabrication process of a semiconductor device using a slurry containing manganese oxide 失效
标题翻译：使用含有氧化锰的浆料的半导体器件的制造方法
公开(公告)号：US5763325A
公开(公告)日：1998-06-09
申请号：US674507
申请日：1996-07-02
申请人： Sadahiro Kishii , Akiyoshi Hatada , Rintaro Suzuki , Hiroshi Horie , Yoshihiro Arimoto , Ko Nakamura
发明人： Sadahiro Kishii , Akiyoshi Hatada , Rintaro Suzuki , Hiroshi Horie , Yoshihiro Arimoto , Ko Nakamura
IPC分类号： C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/463
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/463
摘要： A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
摘要翻译：浆料含有MnO 2或其它氧化锰作为磨料颗粒的主要成分。此外，公开了使用这种氧化锰研磨剂的研磨工艺和使用这种抛光工艺的半导体器件的制造工艺。

4. 发明授权

US6114247A Polishing cloth for use in a CMP process and a surface treatment thereof 失效
标题翻译：用于CMP工艺的抛光布及其表面处理
公开(公告)号：US6114247A
公开(公告)日：2000-09-05
申请号：US884549
申请日：1997-06-27
申请人： Ko Nakamura , Sadahiro Kishii , Yoshihiro Arimoto
发明人： Ko Nakamura , Sadahiro Kishii , Yoshihiro Arimoto
IPC分类号： B24B53/017 , B24D11/00 , B24D13/12 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/3105 , H01L21/321 , H01L21/302
CPC分类号： B24B53/013 , B24B37/044 , B24B53/017 , C09G1/02 , H01L21/02065 , H01L21/02074 , H01L21/31053 , H01L21/3212
摘要： A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 .mu.m or less are formed on the polishing cloth with an interval of about 55 .mu.m or less as a result of the polishing.
摘要翻译：制造半导体器件的方法包括通过在抛光布上通过浆料进行的化学机械抛光工艺来抛光衬底的表面的步骤。进行研磨，由此抛光的结果，在研磨布上以约55μm以下的间隔形成高度约30μm以下的凸起。

5. 发明授权

US5904609A Polishing apparatus and polishing method 失效
标题翻译：抛光设备和抛光方法
公开(公告)号：US5904609A
公开(公告)日：1999-05-18
申请号：US637433
申请日：1996-04-25
申请人： Atsushi Fukuroda , Yoshihiro Arimoto , Ko Nakamura
发明人： Atsushi Fukuroda , Yoshihiro Arimoto , Ko Nakamura
IPC分类号： B24B37/04 , G05B19/416 , B24B49/00
CPC分类号： B24B37/005 , G05B19/4163 , G05B2219/45199 , G05B2219/45232 , G05B2219/49085
摘要： A polishing apparatus comprises a first surface plate for supporting a polishing object, a driving mechanism for rotating the first surface plate, a second surface plate arranged so as to oppose to the first surface plate, an abrasive cloth stuck to the second surface plate, a vibration detector attached to the first surface plate or the second surface plate for detecting vibration in polishing, a controlling portion for controlling polishing operation of the first surface plate and the second surface plate, and signal analyzing unit for analyzing vibration intensity detected by the a vibration detector through frequency analysis, integrating the vibration intensity relative to time, and transmitting a polishing stop signal to stop polishing operation of the first surface plate and the second surface plate to the controlling portion when variation in a resultant integral value relative to time is less than a first reference value or when the resultant integral value is less than a second reference value.
摘要翻译：抛光装置包括用于支撑抛光对象的第一表面板，用于旋转第一表面板的驱动机构，与第一表面板相对布置的第二表面板，粘附到第二表面板的研磨布，振动检测器，附接到第一表面板或第二表面板，用于检测抛光中的振动;控制部分，用于控制第一表面板和第二表面板的抛光操作;以及信号分析单元，用于分析由振动检测的振动强度检测器通过频率分析，相对于时间的振动强度积分，并且当所得到的积分值相对于时间的变化小于时，传递抛光停止信号以停止将第一表面板和第二表面板的抛光操作到控制部分第一参考值或当所得积分值小于seco时 nd参考值。

6. 发明授权

US08497537B2 Semiconductor device with ferro-electric capacitor 失效
标题翻译：具有铁电电容器的半导体器件
公开(公告)号：US08497537B2
公开(公告)日：2013-07-30
申请号：US12128088
申请日：2008-05-28
申请人： Wensheng Wang , Ko Nakamura
发明人： Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/02
CPC分类号： H01L21/02107 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.
摘要翻译：半导体器件具有漏电流小的铁电电容，即使在小型化时也具有较少的工艺劣化。半导体器件包括：形成在半导体衬底中的半导体元件; 夹层绝缘膜和具有氢/水分屏蔽功能的下绝缘屏蔽膜，形成覆盖半导体元件的叠层; 形成在下绝缘屏蔽膜上方的导电粘附增强膜; 以及包含形成在导电性粘合增强膜上的下电极的铁电电容器，形成在下电极上的铁电膜，并且设置在俯视图中的下电极内;以及上电极，形成在铁电膜，并且设置在平面图所示的铁电膜内，其中，导电性粘附增强膜具有提高下部电极的附着力和降低铁电体的漏电流的功能。

7. 发明授权

US07816150B2 Fabrication process of semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US07816150B2
公开(公告)日：2010-10-19
申请号：US11933684
申请日：2007-11-01
申请人： Ko Nakamura
发明人： Ko Nakamura
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method for fabricating a semiconductor device includes the steps of forming a first ferroelectric film over a lower electrode, crystallizing the first ferroelectric film, forming a second ferroelectric film in an amorphous state over the first ferroelectric film so as to fill voids existing on a surface of the first ferroelectric film, and forming an upper electrode over the second ferroelectric film of the amorphous state, wherein the crystallizing step of the first ferroelectric film is conducted by a thermal annealing process at a temperature of 585° C. or higher.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在下电极上形成第一铁电体膜，使第一铁电体膜结晶，在第一铁电体膜上形成非晶状态的第二铁电体膜，以填充存在于表面上的空隙并且在非晶状态的第二铁电体膜上形成上电极，其中第一强电介质膜的结晶步骤通过热退火工艺在585℃或更高的温度下进行。

8. 发明授权

US07078242B2 Manufacturing method of semiconducter device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07078242B2
公开(公告)日：2006-07-18
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01I21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

9. 发明申请

US20050136556A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20050136556A1
公开(公告)日：2005-06-23
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/8234 , H01L21/00 , H01L21/02 , H01L21/8246 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

10. 发明授权

US6121326A Substituted alkyltetraamine derivatives 失效
标题翻译：取代的烷基四胺衍生物
公开(公告)号：US6121326A
公开(公告)日：2000-09-19
申请号：US477824
申请日：2000-01-05
申请人： Atsushi Yamamoto , Ko Nakamura , Masanori Otsuka
发明人： Atsushi Yamamoto , Ko Nakamura , Masanori Otsuka
IPC分类号： A61K31/165 , A61K31/135 , A61K31/22 , A61K31/235 , A61P1/00 , A61P11/00 , A61P25/00 , A61P27/14 , A61P29/00 , A61P43/00 , C07C233/04 , C07C233/11 , C07C233/40 , C07C235/34 , A01N37/18
CPC分类号： C07C235/34
摘要： Compounds which are useful as a tachykinin antagonist are substituted alkyltetraamine derivatives which are represented by the following formula (I) or a pharmaceutically acceptable salt, a complex compound or a solvate thereof. ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are the same or different and each is a phenyl group which may be substituted with one or more hydroxyl, lower alkoxy and/or acyloxy group(s). The compounds are useful as an anti-inflammatory agent, anti-allergic agent, analgesic, antiemetic, agent for irritable colon syndrome, agent for dermal disease, agent for vasospastic disease, agent for cerebral ischemic disease, antidepressant, antianxiety agent, agent for autoimmune disease, antispasmodic, and as a muscle relaxant, etc.
摘要翻译：可用作速激肽拮抗剂的化合物是由下式（I）表示的取代烷基四胺衍生物或其药学上可接受的盐，配位化合物或其溶剂化物。其中R 1，R 2，R 3和R 4相同或不同，并且各自为可被一个或多个羟基，低级烷氧基和/或酰氧基取代的苯基。该化合物可用作抗炎剂，抗过敏剂，止痛剂，止吐剂，刺激性结肠综合征剂，皮肤病药剂，血管痉挛症药剂，脑缺血病药，抗抑郁药，抗焦虑剂，自身免疫药疾病，解痉药，肌肉松弛剂等

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