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1. 发明公开

EP1800348A4 WIRELESS CHIP AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：无线芯片及其制造方法
公开(公告)号：EP1800348A4
公开(公告)日：2015-09-16
申请号：EP05772669
申请日：2005-08-10
申请人： SEMICONDUCTOR ENERGY LAB
发明人： DAIRIKI KOJI , MARUYAMA JUNYA , TAMURA TOMOKO , SUGIYAMA EIJI , DOZEN YOSHITAKA
IPC分类号： H01L29/786 , H01L21/02 , H01L21/336 , H01L27/12
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648

2. 发明公开

EP1920459A4 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：法半导体器件
公开(公告)号：EP1920459A4
公开(公告)日：2012-07-25
申请号：EP06768415
申请日：2006-07-27
申请人： SEMICONDUCTOR ENERGY LAB
发明人： TAKAHASHI HIDEKAZU , SUGIYAMA EIJI
IPC分类号： H01L21/3205 , H01L21/683 , H01L23/485 , H01L27/12
CPC分类号： H01L21/84 , H01L21/6835 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/6835 , H01L2221/68368 , H01L2221/68386 , H01L2223/6677 , H01L2224/0332 , H01L2224/0355 , H01L2224/0391 , H01L2224/0508 , H01L2224/05082 , H01L2224/05116 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05169 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05173 , H01L2224/05178 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05188 , H01L2224/05339 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/32225 , H01L2224/83 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01054 , H01L2924/01058 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/07802 , H01L2924/12044 , H01L2924/13069 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device of the present invention is provided including the steps of forming a first conductive layer over a substrate; forming a second conductive layer containing a conductive particle and resin over the first conductive layer; and increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam. By including the step of laser beam irradiation, the portion where the first conductive layer and the second conductive layer are in contact with each other can be increased and defective electrical connection between the first conductive layer and the second conductive layer can be improved.

3. 发明专利

JP2014160826A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014160826A
公开(公告)日：2014-09-04
申请号：JP2014045961
申请日：2014-03-10
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OTANI HISASHI , SUGIYAMA EIJI
IPC分类号： H01L27/092 , G06K19/07 , H01L21/822 , H01L21/8238 , H01L27/04
CPC分类号： H01L23/295 , H01L21/56 , H01L23/3157 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can increase reliability against an external force, especially a pressing force while ensuring a circuit scale or a memory capacity.SOLUTION: A semiconductor device comprises: a pair of structures in each of which a plurality of layers, especially three and more layers of fiber bodies of an organic compound or an inorganic compound are laminated and an organic resin is impregnated in the laminate; and an element layer provided between the pair of structures. The element layer and the structures can be fastened to each other by thermal compression bond. Or, a layer for fastening the element layer and the structures may be provided. Or, by layering a plurality of fiber bodies on the element layer and subsequently impregnating the organic resin in the fiber bodies, the structure fastened to the element layer can be formed.
摘要翻译：要解决的问题：提供一种能够在确保电路规模或存储容量的同时提高抵抗外力，特别是按压力的可靠性的半导体器件。解决方案：半导体器件包括：一对结构，其中每一个都具有多个的层，特别是有机化合物或无机化合物的三层以上的纤维体层叠，有机树脂浸渍在层叠体中; 以及设置在所述一对结构之间的元件层。元件层和结构可以通过热压接而彼此紧固。或者，可以提供用于紧固元件层和结构的层。或者，通过在元件层上层叠多个纤维体并随后将有机树脂浸渍在纤维体中，可以形成紧固到元件层的结构。

4. 发明专利

JP2012248895A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012248895A
公开(公告)日：2012-12-13
申请号：JP2012196755
申请日：2012-09-07
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TAKAHASHI HIDEKAZU , SUGIYAMA EIJI
IPC分类号： H01L21/3205 , G06K19/07 , G06K19/077 , H01L21/768 , H01L23/522
CPC分类号： H01L21/84 , H01L21/6835 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/6835 , H01L2221/68368 , H01L2221/68386 , H01L2223/6677 , H01L2224/0332 , H01L2224/0355 , H01L2224/0391 , H01L2224/0508 , H01L2224/05082 , H01L2224/05116 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05169 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05173 , H01L2224/05178 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05188 , H01L2224/05339 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/32225 , H01L2224/83 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01054 , H01L2924/01058 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/07802 , H01L2924/12044 , H01L2924/13069 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device with higher reliability.SOLUTION: A manufacturing method for a semiconductor device includes the steps of: forming a first conductive layer on a substrate; forming a second conductive layer containing resin and a gold, silver, or copper conductive particle (also called conductive microparticle) on the first conductive layer; and irradiating the second conductive layer with a laser beam to increase the area (portion) where the first conductive layer and the second conductive layer are in contact with each other. Even in the case where the second conductive layer including the conductive particle and the resin is formed on the first conductive layer, the step of irradiation with the laser beam can increase the portion where the first conductive layer and the second conductive layer are in contact with each other and suppress the poor electrical connection between the first conductive layer and the second conductive layer.
摘要翻译：解决的问题：提供具有更高可靠性的半导体器件的制造方法。解决方案：半导体器件的制造方法包括以下步骤：在衬底上形成第一导电层; 在所述第一导电层上形成含有树脂和金，银或铜导电粒子（也称为导电性微粒）的第二导电层; 以及用激光束照射第二导电层以增加第一导电层和第二导电层彼此接触的面积（部分）。即使在第一导电层上形成包括导电粒子和树脂的第二导电层的情况下，激光束照射的步骤也可以增加第一导电层和第二导电层与第二导电层接触的部分并且抑制第一导电层和第二导电层之间的差的电连接。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012212917A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012212917A
公开(公告)日：2012-11-01
申请号：JP2012139924
申请日：2012-06-21
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OTANI HISASHI , SUGIYAMA EIJI
IPC分类号： H01L23/29 , G06K19/07 , G06K19/077 , H01L23/31
CPC分类号： H01L23/295 , H01L21/56 , H01L23/3157 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose reliability can be increased against an external force, particularly a pressing force, while securing a circuit scale or a memory capacity.SOLUTION: A semiconductor device includes: a pair of structures 101 and 102 in which a stack of plural layers, especially three or more layers, of organic or inorganic compound fiber bodies 101a to 101c and 102a to 102c is impregnated with an organic resin 104; and an element layer 103 provided between the pair of structures 101 and 102. The element layer 103 and the structures 101 and 102 can be fastened by thermal crimping. Alternatively, a layer may be provided for fastening the element layer 103 and the structures 101 and 102. Further alternatively, after the plural fiber bodies 101a to 101c and 102a to 102c are overlapped on the element layer 103, the fiber bodies 101a to 101c and 102a to 102c are impregnated with the organic resin 104, so that the structures 101 and 102 fastened on the element layer 103 can be formed.
摘要翻译：要解决的问题：提供一种半导体器件，其在确保电路规模或存储器容量的同时可以抵抗外力，特别是按压力而增加其可靠性。解决方案：半导体器件包括：一对结构101和102，其中有机或无机复合纤维体101a至101c和102a至102c的多层，特别是三层或更多层的堆叠浸渍有机树脂104; 以及设置在一对结构101和102之间的元件层103.元件层103和结构101和102可以通过热卷曲紧固。或者，可以提供用于紧固元件层103和结构101和102的层。或者，在多个纤维体101a至101c和102a至102c重叠在元件层103上之后，纤维体101a至101c和 102a-102c用有机树脂104浸渍，从而可以形成紧固在元件层103上的结构101和102。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2009054145A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009054145A
公开(公告)日：2009-03-12
申请号：JP2008191272
申请日：2008-07-24
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , KOYAMA JUN , KATO KIYOSHI , KOEN TAKAAKI , YAKUBO HIROTO , YANAGISAWA MAKOTO , OTANI HISASHI , SUGIYAMA EIJI , HORIKOSHI NOZOMI
IPC分类号： G06K19/077 , G06K19/07
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a wireless communication function, which has high reliability against an external force, in particular, pressing force, and prevents electrostatic breakdown in an integrated circuit without interfering with reception of a radio wave. SOLUTION: The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna for transmitting a signal or power included in a received radio wave to the on-chip antenna contactlessly. The integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a conductivity of approximately 10 6 Ω/cm 2 to 10 14 Ω/cm 2 in surface resistance value is formed on at least one surface of each structure body. The conductive film can be formed either on the integrated circuit and on-chip antenna side or on the opposite side. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有无线通信功能的半导体器件，其具有相对于外力的高可靠性，特别是按压力，并且防止集成电路中的静电击穿而不干扰无线电波的接收。解决方案：半导体器件包括连接到集成电路的片上天线和用于将接收的无线电波中包括的信号或功率无接触地发送到片上天线的增强天线。集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。导电膜的导电率约为10 -6 / SP 2Ω/ cm 2 SP SP 2 / SP SP 2 / SP SP 表面电阻值形成在每个结构体的至少一个表面上。导电膜可以形成在集成电路和片上天线侧或相反侧上。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009016808A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009016808A
公开(公告)日：2009-01-22
申请号：JP2008146459
申请日：2008-06-04
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OTANI HISASHI , SUGIYAMA EIJI
IPC分类号： H01L23/29 , G06K19/07 , G06K19/077 , H01L23/31
CPC分类号： H01L23/295 , H01L21/56 , H01L23/3157 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having improved reliability against outer force, particularly, pressing while securing a circuit scale or a memory capacity. SOLUTION: The semiconductor device includes a pair of structures each having organic or inorganic compound fabrics built up in a plurality of layers, particularly, in three or more layers and impregnated with an organic resin, and an element layer provided between the pair of structures. The element layer and the structures are fixed to each other with heat press bonding. It is acceptable to provide a layer for fixing the element layer to the structures. Otherwise, after the plurality of fabrics are laid on the element layer, the fabrics are impregnated with the organic resin to form the structures fixed to the element layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有提高的抵抗外力的可靠性的半导体器件，特别是在确保电路规模或存储器容量的同时进行压制。解决方案：半导体器件包括一对结构，每个结构都具有以多层，特别是三层或更多层形成并浸渍有机树脂的有机或无机复合织物，以及设置在该对之间的元件层的结构。元件层和结构通过热压粘合彼此固定。提供用于将元件层固定到结构体的层是可以接受的。否则，在将多个织物放置在元件层上之后，织物用有机树脂浸渍以形成固定在元件层上的结构。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008004893A Semiconductor device and method of fabricating same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008004893A
公开(公告)日：2008-01-10
申请号：JP2006175611
申请日：2006-06-26
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MICHIMAE YOSHITAKA , AOKI TOMOYUKI , TAKAHASHI HIDEKAZU , YAMADA HIROMI , SUGIYAMA EIJI , OGITA KO , KUSUMOTO NAOTO
IPC分类号： H01L29/786 , B42D15/10 , G06K19/07 , G06K19/077 , H01L21/02 , H01L21/336 , H01L27/12
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a thinner, easily bendable semiconductor device which sufficiently takes advantage of employing a flexible substrate and also a method of fabricating the semiconductor device. SOLUTION: The semiconductor device has at least one surface covered with an insulating layer which functions as a protective substrate, the insulating layer being formed on a conductive layer which functions as an antenna such that a ratio of a film thickness of the insulating layer in the portion where the insulating layer does not cover the conductive layer is at least ≥1.2 to the film thickness of the conductive layer and a ratio of a film thickness of the insulating layer laid over the conductive layer is at least 0.2 or more to the film thickness of the conductive layer. In addition, the semiconductor device is configured such that no conductive film is exposed but an insulating film covering a TFT or a conductive film is exposed in any of the side surfaces of the semiconductor device. Furthermore, in a fabrication process, a substrate provided with a supporting member on the surface is employed as a substrate covering the device formation layer side. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供充分利用柔性基板的更薄，易弯曲的半导体器件以及制造半导体器件的方法。解决方案：半导体器件具有覆盖有用作保护衬底的绝缘层的至少一个表面，绝缘层形成在用作天线的导电层上，使得绝缘层的膜厚比绝缘层不覆盖导电层的部分中的层与导电层的膜厚成比例至少≥1.2，并且布置在导电层上的绝缘层的膜厚比例至少为0.2以上至导电层的膜厚度。此外，半导体器件被配置为使得没有导电膜被暴露，但是覆盖TFT或导电膜的绝缘膜暴露在半导体器件的任何侧表面中。此外，在制造工艺中，使用在表面上设置有支撑构件的基板作为覆盖器件形成层侧的基板。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007073948A Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007073948A
公开(公告)日：2007-03-22
申请号：JP2006217695
申请日：2006-08-10
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TAKAHASHI HIDEKAZU , SUGIYAMA EIJI
IPC分类号： H01L21/02 , G06K19/07 , G06K19/077 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L2924/01047
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device with higher reliability. SOLUTION: The method of fabricating the semiconductor device includes a step of forming a first conductive layer on a substrate; a step of forming a second conductive layer containing conductive particles (also referred to as conductive fine particles) of gold, silver, or copper, and a resin on the first conductive layer; and a step of irradiating the second conductive layer with a laser beam to expand an area (part), where the first conductive layer and the second conductive layer come into contact with each other. Since the method includes the step of irradiating the second conductive layer with the laser beam, even when the second conductive layer composed of the conductive particles and the resin is formed on the first conductive layer, it is possible to expand the part where the first conductive layer and the second conductive layer come into contact with each other, and to repair an faulty electrical connection between the first conductive layer and the second conductive layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有更高可靠性的半导体器件的方法。解决方案：制造半导体器件的方法包括在衬底上形成第一导电层的步骤; 在第一导电层上形成含有金，银或铜的导电性微粒（也称为导电性微粒）和树脂的第二导电层的工序; 以及用激光束照射第二导电层以扩大第一导电层和第二导电层彼此接触的区域（部分）的步骤。由于该方法包括用激光束照射第二导电层的步骤，所以即使在第一导电层上形成由导电粒子和树脂构成的第二导电层，也可以扩大第一导电性层和第二导电层彼此接触，并且修复第一导电层和第二导电层之间的故障电连接。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006093678A Wireless chip and method of manufacturing the same 有权
标题翻译：无线芯片及其制造方法
公开(公告)号：JP2006093678A
公开(公告)日：2006-04-06
申请号：JP2005241709
申请日：2005-08-23
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： ORIKI KOJI , MARUYAMA JUNYA , TAMURA TOMOKO , SUGIYAMA EIJI , MICHIMAE YOSHITAKA
IPC分类号： H01L29/786 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L27/12 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To reduce the cost of a wireless chip or reduce the cost of a wireless chip by mass producing the wireless chip, and provide a small and lightweight wireless chip. SOLUTION: The present invention provides the wireless chip in which a thin-film integrated circuit exfoliated from a glass substrate or a quartz substrate is disposed on a first base substrate and a second base substrate. The wireless chip of the present invention has a small size, a small thickness, and a light weight as compared with a wireless chip made up of a silicon substrate. The thin-film integrated circuit included in the wireless chip of the present invention has at least an N-type thin-film transistor of LDD (Lightly Doped Drain) structure, a P-type thin-film transistor of single drain structure, and a conductive layer acting as an antenna. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过大量生产无线芯片来降低无线芯片的成本或降低无线芯片的成本，并提供小而轻便的无线芯片。解决方案：本发明提供一种无线芯片，其中从玻璃基板或石英基板剥离的薄膜集成电路设置在第一基板和第二基板上。与由硅基板构成的无线芯片相比，本发明的无线芯片尺寸小，厚度小，重量轻。包括在本发明的无线芯片中的薄膜集成电路至少具有LDD（轻掺杂漏极）结构的N型薄膜晶体管，单漏极结构的P型薄膜晶体管和作为天线的导电层。版权所有（C）2006，JPO＆NCIPI

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