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1. 发明授权

US4295058A Radiant energy activated semiconductor switch 失效
标题翻译：辐射能激活半导体开关
公开(公告)号：US4295058A
公开(公告)日：1981-10-13
申请号：US46568
申请日：1979-06-07
申请人： Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
发明人： Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
IPC分类号： H03K17/13 , H03K17/79 , H03K17/94 , H03K17/72 , H03K17/687
CPC分类号： H03K17/79 , H03K17/136 , H03K17/941 , Y10S136/293 , Y10T307/773
摘要： Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.
摘要翻译：公开了各种电路和辐射能响应传感器装置的组合，例如连接到源极和漏极连接到晶闸管的栅极和阴极的耗尽型FET的栅极的光伏二极管，以提供半导体开关，其被触发成导通仅仅通过少量的辐射能量，而不需要第二触发能量源，并且还提供对不需要的dv / dt和温度引起的接通的抗扰性。公开了各种操作模式，包括晶闸管自触发为导通，和/或具有光激活型本身，并且通过入射光直接触发和/或由光响应二极管偏压触发，和/ 或者由连接到晶闸管门的第二组光伏二极管提供的小偏压触发。公开了提供零交叉点火的其它组合。

2. 发明授权

US4112458A Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50.degree. C 失效
标题翻译：硅晶闸管对低温敏感，温度低于50℃时具有热开关特性{20 {0 C
公开(公告)号：US4112458A
公开(公告)日：1978-09-05
申请号：US652192
申请日：1976-01-26
申请人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
发明人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
IPC分类号： H01L29/74 , G01K7/01 , H01L29/66
CPC分类号： H01L29/66992 , G01K7/01
摘要： Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30.degree. C to +150.degree. C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50.degree. C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature.
摘要翻译：能够在-30℃至+ 150℃范围内的预定温度下本身可在高电阻状态和低电阻状态之间切换的热敏硅晶闸管; 该固有开关温度不仅比迄今为止还要低，而且可以预测地确定。在低于50℃的温度下，两端子断开电压通常等于二分之一Vmax，其中Vmax是晶闸管相对于温度的两端触发电压的最大值。

3. 发明授权

US3971056A Semiconductor temperature switches 失效
标题翻译：半导体温度开关
公开(公告)号：US3971056A
公开(公告)日：1976-07-20
申请号：US550838
申请日：1975-02-18
申请人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman , Lawrence E. Van Horn
发明人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman , Lawrence E. Van Horn
IPC分类号： G01K7/01 , G05D23/20 , H01L29/66 , H03K17/94 , H01L23/56 , H01L29/74 , H02P1/44 , H03K3/35
CPC分类号： H01L29/66992 , G01K7/01 , G05D23/20 , H01L24/01 , H03K17/94 , H01L2924/16152
摘要： Germanium semiconductor temperature switches are described which are capable of intrinsically switching between high and low resistance states within a temperature range up to 55.degree.C, and are adapted for operating at voltages up to 400 volts. These temperature switches are disclosed in various configurations. Basic circuits for adjusting the temperatures at which such switches switch within a range are disclosed. Preferred methods of making the same are also disclosed.
摘要翻译：描述了锗半导体温度开关，其能够在高达55℃的温度范围内本质上在高电阻和低电阻状态之间切换，并且适于在高达400伏的电压下工作。以各种结构公开了这些温度开关。公开了用于调节这种开关在一定范围内切换的温度的基本电路。还公开了制备其的优选方法。

4. 再颁专利

USRE30514E Thermally self-protected power switching semiconductor device 失效
标题翻译：热自保功率开关半导体器件
公开(公告)号：USRE30514E
公开(公告)日：1981-02-10
申请号：US21789
申请日：1979-03-19
申请人： Roy Hyink , Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
发明人： Roy Hyink , Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
IPC分类号： G05D23/20 , H02H5/04 , H03K17/08 , H03K17/082 , H03K17/73
CPC分类号： G05D23/20 , H02H5/044 , H03K17/0824 , H03K17/73 , H03K2017/0806
摘要： A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.

5. 发明授权

US4206646A Transducer combining comparator or converter function with sensor function 失效
标题翻译：传感器组合比较器或转换器功能与传感器功能
公开(公告)号：US4206646A
公开(公告)日：1980-06-10
申请号：US946179
申请日：1978-09-27
申请人： Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , Robert W. Lade
发明人： Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , Robert W. Lade
IPC分类号： G01D5/246 , G01K7/01 , G01K7/00
CPC分类号： G01D5/246 , G01K7/01
摘要： A transducer is disclosed which provides a digital indication of a sensed analog condition without the need of an analog to digital (A/D) converter or a comparator. A condition responsive element having a true abrupt switching characteristic at a known breakover voltage as a function of a condition being sensed is biased by a voltage source preferably supplying a periodic voltage as a known function of time. The point during the voltage source cycle at which the condition responsive element switches to its other state is determined by the sensed condition. Preferably, a clock of known frequency is enabled when the condition responsive element is in one of its states, whereby clock pulses are counted during an interval whose duration is determined by the sensed condition. The number of clock pulses counted is a digital value of the analog condition being sensed because: (i) the clock frequency is known; (ii) the voltage/time relation of the voltage source is known; and (iii) the voltage/sensed condition relation of the condition responsive element is known. A thermally sensitive thyristor is specifically disclosed for the condition responsive element.
摘要翻译：公开了一种传感器，其提供感测模拟状态的数字指示，而不需要模数（A / D）转换器或比较器。具有作为感测条件的函数的已知的断开电压具有真正的突变切换特性的条件响应元件被优选地提供作为已知时间功能的周期性电压的电压源偏置。在状态响应元件切换到其它状态的电压源周期期间的点由感测到的条件确定。优选地，当条件响应元件处于其状态之一时，已知频率的时钟被使能，从而在其持续时间由感测到的条件确定的间隔期间对时钟脉冲进行计数。计数的时钟脉冲的数量是由于（i）时钟频率已知的，感测的模拟条件的数字值; （ii）电压源的电压/时间关系是已知的; 以及（iii）条件响应元件的电压/感测条件关系是已知的。专门针对条件响应元件公开了一种热敏晶闸管。

6. 发明授权

US4184126A Temperature sensitive astable multivibrator 失效
标题翻译：温度敏感的非饱和多谐振荡器
公开(公告)号：US4184126A
公开(公告)日：1980-01-15
申请号：US946181
申请日：1978-09-27
申请人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
发明人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
IPC分类号： G01K3/00 , G01K7/01 , G01K7/00 , H03K3/282
CPC分类号： G01K7/01 , G01K3/005
摘要： A temperature sensitive thyristor is incorporated with an astable multivibrator to provide active temperature sensing. Below the switching temperature Tsw of the thyristor, an oscillatory signal is present at the output of the multivibrator. When the temperature exceeds Tsw, oscillation ceases because of the shunt path provided through the thyristor when it intrinsically switches to its low resistance on state above Tsw. Cooling results in resumption of oscillation. This is a "fail-safe" arrangement because component failure also provides a warning condition (absence of oscillation).
摘要翻译：温度敏感晶闸管与不稳定的多谐振荡器并入，以提供主动温度感测。在晶闸管的开关温度Tsw之下，振荡信号存在于多谐振荡器的输出端。当温度超过Tsw时，由于通过晶闸管提供的分流路径，当其本质上切换到Tsw以上的低电阻时，振荡停止。冷却导致振荡恢复。这是一个“故障安全”的安排，因为组件故障也提供了一个警告条件（没有振荡）。

7. 发明授权

US4087848A Thermally self-protected power switching semiconductor device 失效
标题翻译：热自保功率开关半导体器件
公开(公告)号：US4087848A
公开(公告)日：1978-05-02
申请号：US725105
申请日：1976-09-20
申请人： Roy Hyink , Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
发明人： Roy Hyink , Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
IPC分类号： G05D23/20 , H02H5/04 , H03K17/08 , H03K17/082 , H03K17/73
CPC分类号： G05D23/20 , H02H5/044 , H03K17/0824 , H03K17/73 , H03K2017/0806
摘要： A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.
摘要翻译：公开了一种半导体器件，其包括热耦合到功率开关晶闸管的温度敏感晶闸管，并且与其并联电连接。温度敏感晶闸管感测功率开关晶闸管的温度，并通过分流栅极电流自动响应于预定温度高于预定温度，以防止功率开关晶闸管过热。该装置还可包括第二温度敏感晶闸管，其具有比第一晶闸管更低的开关温度并与功率开关晶闸管的栅极串联连接，由此后者可以仅在由开关限制的限定温度范围内被触发导通温度敏感晶闸管的温度。通常也关闭和正常使用设备。

8. 发明授权

US4529998A Amplified gate thyristor with non-latching amplified control transistors across base layers 失效
标题翻译：具有非锁存放大控制晶体管的放大栅极晶闸管跨基极层
公开(公告)号：US4529998A
公开(公告)日：1985-07-16
申请号：US391803
申请日：1982-06-24
申请人： Robert W. Lade , Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman
发明人： Robert W. Lade , Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman
IPC分类号： H01L27/06 , H01L29/74
CPC分类号： H01L29/7428 , H01L27/0694
摘要： A diode is integrated on a common substrate with a thyristor to form a parasitic transistor in the gate circuit of the thyristor for amplifying gate current thereto. In addition, gate sensitivity is further enhanced by this formation because the injection efficiency across the thyristor anode-base junction is increased, thus reducing the amount of gate current necessary to trigger the thyristor. The diode cathode, diode anode and substrate form an emitter, base and collector, respectively, of the parasitic transistor. The junction formed by the substrate and the thyristor anode region is forward biased and supplies collector current for the parasitic transistor, this junction being inactive with respect to the junction formed by the substrate and the diode anode region. Thus gate current flowing through the diode to the gate of the thyristor is increased by the additional collector current afforded by the parasitic transistor. This parasitic transistor formation enables the use of a shorted-emitter thyristor while also achieving a high degree of gate sensitivity without the usual drawbacks of temperature and dv/dt sensitivity associated with a nonshorted-emitter high gate sensitivity thyristor.
摘要翻译：二极管集成在具有晶闸管的公共衬底上，以在晶闸管的栅极电路中形成用于放大栅极电流的寄生晶体管。此外，由于这种形成进一步增强栅极灵敏度，因为跨越晶闸管阳极 - 基极结的注入效率增加，从而减少触发晶闸管所需的栅极电流量。二极管阴极，二极管阳极和衬底分别形成寄生晶体管的发射极，基极和集电极。由衬底和晶闸管阳极区形成的结正向偏置，并为寄生晶体管提供集电极电流，该结对于由衬底和二极管阳极区形成的结无效。因此，通过由寄生晶体管提供的附加集电极电流，流过二极管的栅极电流增加到晶闸管的栅极。这种寄生晶体管形成使得能够使用短路发射极晶闸管，同时也实现高度的栅极灵敏度，而没有与非发射极高栅极灵敏度晶闸管相关的温度和dv / dt灵敏度的常见缺点。

9. 发明授权

US4458287A Thermally protected semiconductor with accurate phase control 失效
标题翻译：具有精确相位控制的热保护半导体
公开(公告)号：US4458287A
公开(公告)日：1984-07-03
申请号：US421940
申请日：1982-09-23
申请人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
发明人： Stanley V. Jaskolski , Robert W. Lade , Herman P. Schutten , Gordon B. Spellman
IPC分类号： H03K17/08 , H03K17/082 , H02H5/04
CPC分类号： H03K17/0824 , H03K2017/0806
摘要： A power thyristor is provided with a pair of antiseries back to back diode junctions forming an open base transistor thermally coupled to the thyristor and electrically connected between the thyristor gate and cathode. The diode junctions shunt gate current above a given sensed temperature of the power thyristor, for protecting the latter by preventing turn-on thereof. The diode junctions have nonsymmetrical leakage current characteristics to insure protective shunting of forward gate drive in one direction but blocking leakage in the other direction to prevent draining a reverse charged phasing capacitor. The latter is thus charged beginning from the same starting reference point in each cycle whereby to insure accurate phase control in an AC gating system.
摘要翻译：功率晶闸管具有一对反电容背对背二极管结，形成热耦合到晶闸管的开放式基极晶体管，并电连接在晶闸管栅极和阴极之间。二极管将电流闸流电流分流到功率晶闸管的给定感测温度以上，以防止其接通。二极管接头具有非对称的漏电流特性，以确保正向栅极驱动在一个方向上的保护分流，但阻止另一个方向的泄漏，以防止排出反向充电相控电容器。因此，后者在每个循环中从相同的起始参考点开始充电，从而确保AC选通系统中的精确相位控制。

10. 发明授权

US4323793A Thyristor having widened region of temperature sensitivity with respect to breakover voltage 失效
标题翻译：晶闸管相对于转折电压具有加宽的温度敏感区域
公开(公告)号：US4323793A
公开(公告)日：1982-04-06
申请号：US94074
申请日：1979-11-14
申请人： Herman P. Schutten , Stanley V. Jaskolski , Gordon B. Spellman , Robert W. Lade , Michael J. Schutten
发明人： Herman P. Schutten , Stanley V. Jaskolski , Gordon B. Spellman , Robert W. Lade , Michael J. Schutten
IPC分类号： H03K17/72
CPC分类号： H03K17/72
摘要： An external resistance is presented between the gate and cathode of a thermally sensitive thyristor which varies in accordance with a changing voltage applied across the thyristor. The changing voltage sweeps the varying external resistance through its operating range which in turn expands the region of temperature sensitivity with respect to breakover voltage by sweeping the shifting curves of switching temperature vs. gate to cathode resistance for the thyristor. In preferred form, a field effect transistor (FET) (10) is connected between the gate (8) and cathode (4) of the thermally sensitive thyristor (6) and is biased by the same voltage supply applied across the thyristor. The FET presents an external gate to cathode resistance which varies in accordance with the changing bias level on the FET, which is the same changing bias applied across the thyristor. The range of variance of this added external resistance must be between 10,000 ohms and 1 megohm. The breakover voltage of the thyristor can be made to vary slowly with respect to temperature, rather than exhibiting sharp drop in a narrow critical temperature region.
摘要翻译：在热敏晶闸管的栅极和阴极之间呈现外部电阻，其根据施加在晶闸管上的变化的电压而变化。变化的电压通过其工作范围扫描变化的外部电阻，通过扫描晶闸管的开关温度与栅极至阴极电阻的移位曲线，从而扩展相对于分解电压的温度灵敏度区域。在优选形式中，场效应晶体管（FET）（10）连接在热敏晶闸管（6）的栅极（8）和阴极（4）之间，并被施加在晶闸管两端的相同电源施加偏压。 FET呈现外部栅极至阴极电阻，其根据FET上改变的偏置电平而变化，这是跨晶闸管施加的相同的变化偏置。该外加电阻的方差范围必须在10,000欧姆和1兆欧之间。可以使晶闸管的转折电压相对于温度变化缓慢，而不是在窄的临界温度区域显示出急剧的下降。

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