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1. 发明授权

US4400528A Process for methylating silicon compounds 失效
标题翻译：甲基化硅化合物的方法
公开(公告)号：US4400528A
公开(公告)日：1983-08-23
申请号：US372499
申请日：1982-04-28
申请人： Reinhold Artes , Volker Frey , Werner Graf , Norbert Zeller
发明人： Reinhold Artes , Volker Frey , Werner Graf , Norbert Zeller
IPC分类号： C07F7/08 , C07F7/12
CPC分类号： C07F7/125 , C07F7/0801 , C07F7/0827
摘要： A process for methylating silicon compounds containing halogen and at least 2 silicon atoms and optionally carbon and hydrogen atoms as the only atoms in the molecule, which comprises reacting a silicon compound containing halogen and at least two silicon atoms per molecule, such as hexachlorodisilane or 1,1,2,2-tetrachloro-1,2-dimethyldisilane or mixtures of such silanes with tetramethylsilane in the presence of at least one organoaluminum compound having the general formulaR.sub.a AlY.sub.3-a'where R represents the same or different alkyl radicals having from 1 to 4 carbon atoms, Y represents halogen, hydrogen or hydrocarbon radicals having from 1 to 10 carbon atoms which are bonded to the aluminum atom via oxygen and which are free of aliphatic multiple bonds, and a is 1, 2 or 3, or an in situ formed compound obtained from the reaction of such aluminum compound, with at least one other reactant present in the reaction mixture, at least one silane of the general formulaR.sub.b.sup.1 H.sub.c SiCl.sub.4-b-cand hydrogen halide, where R.sup.1 represents the same or different hydrocarbon radicals which are free of aliphatic multiple bonds and have from 1 to 10 carbon atoms, b is 0, 1, 2 or 3, and c is 1, 2 or 3, with the proviso that the sum of b+c may not exceed 4.
摘要翻译：使含有卤素和至少2个硅原子以及任选的碳原子和氢原子的硅化合物甲基化的方法作为分子中唯一的原子，其包括使每分子含有卤素和至少两个硅原子的硅化合物如六氯二硅烷或1 ，1,2,2-四氯-1,2-二甲基硅烷或这些硅烷与四甲基硅烷的混合物在至少一种具有通式RaAlY 3-a'的有机铝化合物的存在下，其中R表示相同或不同的具有1个至4个碳原子，Y表示卤素，氢或具有1至10个碳原子的烃基，其通过氧键键合到铝原子上并且不含脂族多重键，并且a是1,2或3，或由这种铝化合物与反应混合物中存在的至少一种其它反应物反应获得的至少一种通式为Rb 1 HcSiCl 4 -bc的硅烷和水罗格列酮，其中R1表示相同或不同的不含脂族多重键且具有1-10个碳原子的烃基，b为0,1,2或3，c为1,2或3，条件是 b + c的总和不得超过4。

2. 发明授权

US4209454A Preparation of hydrocarbonoxy containing polysiloxanes 失效
标题翻译：含烃氧基聚硅氧烷的制备
公开(公告)号：US4209454A
公开(公告)日：1980-06-24
申请号：US973982
申请日：1978-12-28
申请人： Werner Graf , Volker Frey , Peter John , Norbert Zeller
发明人： Werner Graf , Volker Frey , Peter John , Norbert Zeller
IPC分类号： C08G77/00 , C07F7/18 , C08G77/02 , C08G77/06 , C08G77/18 , C08G77/22 , C08G77/50 , C07F7/04
CPC分类号： C08G77/18 , C08G77/02 , C08G77/06 , C08G77/50
摘要： This invention relates to an improved process for preparing polysiloxanes having hydrocarbon radicals bonded to silicon atoms via oxygen, by reacting a halosilane with an alcohol and water in the presence of the desired polysiloxane, the improvement which comprises continuously introducing into a reactor equipped with a column and possibly a reflux condenser and the desired polysiloxane, an alcohol, water and, if necessary, an acid catalyst which promotes the condensation of Si-bonded condensable groups, in an amount such that the reactor contains at least 5 percent by weight of alcohol and 0.001 to 5 percent by weight of catalyst, based on the weight of the alcohol, catalyst and polysiloxane present in the reactor in which the contents of the reactor are heated to the reflux temperature and the halosilane is introduced into the column at least one meter above the bottom of the column while continuously removing the polysiloxane from the reactor at the same rate as it is formed.
摘要翻译：本发明涉及一种制备具有通过氧连接到硅原子上的烃基的聚硅氧烷的改进方法，通过卤代硅烷与醇和水在所需的聚硅氧烷的存在下反应，其改进包括连续地引入装有柱的反应器以及可能的回流冷凝器和所需的聚硅氧烷，醇，水和必要时促进Si键合的可缩合基团缩合的酸催化剂，其量使得反应器含有至少5重量％的醇和基于反应器中存在的醇，催化剂和聚硅氧烷的重量，催化剂的重量为0.001至5重量％，其中将反应器的内容物加热至回流温度，并将卤代硅烷引入塔中至少一米以上柱的底部，同时以与形成的相同的速率从反应器中连续除去聚硅氧烷。

3. 发明授权

US4425387A Method for preparing solid objects 失效
标题翻译：固体物质的制备方法
公开(公告)号：US4425387A
公开(公告)日：1984-01-10
申请号：US414162
申请日：1982-09-02
申请人： Werner Graf , Volker Frey , Hans-Gunter Rose
发明人： Werner Graf , Volker Frey , Hans-Gunter Rose
IPC分类号： C08G77/00 , C08G77/38 , C08G77/398 , C08G77/48 , C08G77/56 , A21D4/00
CPC分类号： C08G77/398 , C08G77/56 , Y10T428/31663
摘要： A process for preparing a solid object which comprises molding a composition obtained from the reaction of polysiloxanes having at least 3 silicon atoms per molecule and containing SiOC-bonded organic radicals and optionally, SiC-bonded organic radicals, with boric acid anhydride, and thereafter exposing the molded object to moisture.
摘要翻译：一种制备固体物体的方法，其包括将由每分子具有至少3个硅原子并且含有SiOC键合的有机基团和任选的与SiC键合的有机基团的聚硅氧烷反应获得的组合物与硼酸酐模制，然后暴露模制物体潮湿。

4. 发明授权

US4176130A Process for preparing acyloxysilanes and acyloxysiloxanes 失效
标题翻译：制备酰氧基硅烷和酰氧基硅氧烷的方法
公开(公告)号：US4176130A
公开(公告)日：1979-11-27
申请号：US974200
申请日：1978-12-28
申请人： Peter John , Wolfgang Feichtner , Werner Graf , Volker Frey
发明人： Peter John , Wolfgang Feichtner , Werner Graf , Volker Frey
IPC分类号： C07F7/08 , C07F7/18
CPC分类号： C07F7/1896 , C07F7/0874 , C07F7/0885
摘要： This invention relates to an improved process for preparing acyloxysilanes and acyloxysiloxanes which comprises conducting an aliphatic carboxylic acid in vapor form upwards from the bottom of a column countercurrent to the flow of a chlorosilane in which the carboxylic acid is introduced into the column at such a rate that the carboxylic acid does not exceed about 1.3 mol per gram atom of Si-bonded chlorine in the column while removing the acyloxysilane from the bottom of the column.The acyloxysiloxanes are prepared by conducting an aliphatic carboxylic acid upwards from the bottom of a column in vapor form countercurrent to the flow of a chlorosilane while introducing up to about 10 percent by weight of water based on the weight of the carboxylic acid into the column and removing the acyloxysiloxane from the bottom of the column.
摘要翻译：本发明涉及一种制备酰氧基硅烷和酰氧基硅氧烷的改进方法，其包括将蒸气形式的脂族羧酸从塔的底部向上与氯代硅烷的流动逆流相接触，其中羧酸以这样的速率引入塔中羧酸在柱中不超过约1.3mol /克原子的Si键合氯，同时从柱底除去酰氧基硅烷。酰氧基硅氧烷是通过以与氯硅烷流相反的蒸气形式从塔底向上导入脂族羧酸而制备的，同时基于羧酸重量加入到塔中约10重量％的水，从柱的底部除去酰氧基硅氧烷。

5. 发明授权

US4158010A Process for preparing organosilanes 失效
标题翻译：制备有机硅烷的方法
公开(公告)号：US4158010A
公开(公告)日：1979-06-12
申请号：US902462
申请日：1978-05-03
申请人： Werner Graf , Peter John , Volker Frey
发明人： Werner Graf , Peter John , Volker Frey
IPC分类号： B01J31/00 , C07B61/00 , C07F7/08 , C07F7/12
CPC分类号： C07F7/0801 , C07F7/0827 , C07F7/125
摘要： An improved process for converting an organosilane which comprises reacting at least one silane (A) having the formulaR.sub.a SiCl.sub.4-awith at least one silane (B) which differs from silane (A) and has the formulaR.sub.b SiCl.sub.4-bin the presence of an organoaluminum compound having the formulaR.sub.c.sup.1 AlY.sub.3-cand at least one silane (C) having the formulaR.sub.b H.sub.c SiCl.sub.4-b-cand from 0.1 to 5 percent by weight based on the weight of silanes (A), (B) and (C) of a hydrogen halide, in which R is a hydrocarbon radical having from 1 to 10 carbon atoms and is free of aliphatic unsaturation, R.sup.1 is an alkyl radical having from 1 to 4 carbon atoms, Y is selected from the group consisting of halogen, hydrogen or hydrocarbon radicals having from 1 to 10 carbon atoms which are bonded to the aluminum via oxygen and are free of aliphatic unsaturation, a is 2, 3 or 4, b is 0, 1, 2 or 3 and c is 1, 2 or 3 and the sum of b+c cannot exceed 4.
摘要翻译：一种用于转化有机硅烷的改进方法，其包括使至少一种具有式RaSiCl4-a的硅烷（A）与不同于硅烷（A）的至少一个硅烷（B）反应并具有式RbSiCl4-b的存在具有式Rc1AlY3-c和至少一种具有式RbHcSiCl4-bc的硅烷（C）的ORGANOALUMUMUMUM化合物和基于重量的0.1至5％的氢化钠（A），（B）和（C）卤化物，其中R是具有1至10个碳原子且不含脂族不饱和基团的烃基，R 1是具有1至4个碳原子的烷基，Y选自卤素，氢或烃基具有1至10个碳原子，其通过氧连接到铝上并且不含脂族不饱和度，a是2,3或4，b是0,1,2或3，c是1,2或3，并且总和的b + c不能超过4。

6. 发明授权

US10550765B2 Energy storage device and method for storing energy 有权
公开(公告)号：US10550765B2
公开(公告)日：2020-02-04
申请号：US16345315
申请日：2017-10-26
申请人： Peter Ortmann , Werner Graf
发明人： Peter Ortmann , Werner Graf
IPC分类号： F01K3/00 , F02C6/14 , F28D17/00 , F02C1/04 , F01K25/00
摘要： An energy storage device having: a high-temperature regenerator containing a solid, particularly porous storage material (S); a working gas (A) as the heat transfer medium to transfer heat between the storage material (S) and the working gas (A) flowing through; and a charging circuit and a discharging circuit for the working gas (A). The charging circuit is designed such that starting from a pre-heating unit at least one first heat transfer duct of a recuperator, a first compressor (HO), the high-temperature regenerator, a second heat transfer duct of the recuperator and then a first expander are interconnected, thus forming a circuit, so as to conduct fluid. The first compressor is coupled with the first expander, and the first compressor forms part of a first piston machine (K1) and the first expander forms part of a second piston machine (K2), the piston machines (K1, K2) being operable either as a compressor or as an expander such that the first compressor of the charging circuit forms a second expander in the discharging circuit and that the first expander of the charging circuit forms a second compressor in the discharging circuit. The high-temperature regenerator can be connected to either the charging circuit or the discharging circuit to conduct fluid and can be controlled such that the high-temperature regenerator, the compressor and the expander form either part of the charging circuit or part of the discharging circuit. The charging circuit, the discharging circuit and the high-temperature regenerator have the same working gas (A) so that the working gas (A) comes into direct contact with the storage material of the high-temperature regenerator both in the charging circuit and in the discharging circuit.

7. 发明授权

US07838928B2 Word line to bit line spacing method and apparatus 有权
标题翻译：字线到位线间距法和装置
公开(公告)号：US07838928B2
公开(公告)日：2010-11-23
申请号：US12134740
申请日：2008-06-06
申请人： Werner Graf , Lars Heineck , Martin Popp
发明人： Werner Graf , Lars Heineck , Martin Popp
IPC分类号： H01L29/792
CPC分类号： H01L21/76232 , H01L21/743 , H01L27/10882 , H01L27/10885 , H01L27/10891
摘要： In one embodiment, a memory cell includes a bit line arranged in a semiconductor substrate and a bit line contact region arranged adjacent the bit line. A word line is arranged above the bit line contact region in a trench formed in the semiconductor substrate. A generally U-shaped insulating layer is arranged in a bottom region of the trench and separates the bit line and the bit line contact region from the word line.
摘要翻译：在一个实施例中，存储单元包括布置在半导体衬底中的位线和布置在位线附近的位线接触区域。在形成在半导体衬底中的沟槽中的位线接触区域上方布置字线。大致U形绝缘层布置在沟槽的底部区域中，并将位线和位线接触区域与字线分离。

8. 发明申请

US20100090285A1 Integrated Circuit with a Contact Structure Including a Portion Arranged in a Cavity of a Semiconductor Structure 有权
标题翻译：具有包含在半导体结构的腔中的部分的接触结构的集成电路
公开(公告)号：US20100090285A1
公开(公告)日：2010-04-15
申请号：US12251864
申请日：2008-10-15
申请人： Werner Graf , Clemens Fitz
发明人： Werner Graf , Clemens Fitz
IPC分类号： H01L27/088 , H01L23/48 , H01L21/76
CPC分类号： H01L21/743 , H01L21/823418 , H01L21/823475 , H01L23/485 , H01L29/66636 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.
摘要翻译：集成电路包括具有埋入的第一和突出的第二部分的接触结构。掩埋的第一部分布置在形成于半导体结构中并与半导体结构直接接触的空腔中。突出的第二部分布置在半导体结构的主表面上方，并且与与半导体结构的主表面间隔开或分离的导电结构直接接触。绝缘体结构布置在接触结构的下方并直接接触。

9. 发明申请

US20080150141A1 Manufacturing method for an integrated semiconductor structure and corresponding semiconductor structure 审中-公开
标题翻译：集成半导体结构的制造方法和相应的半导体结构
公开(公告)号：US20080150141A1
公开(公告)日：2008-06-26
申请号：US11652255
申请日：2007-01-11
申请人： Werner Graf , Andreas Thies , Marco Lepper , Momtchil Stavrev
发明人： Werner Graf , Andreas Thies , Marco Lepper , Momtchil Stavrev
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/5329 , H01L21/76829 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of: providing a semiconductor substrate with a main surface; forming a wiring metal layer above said main surface; forming a doped getter layer on said wiring metal layer; and forming at least one additional wiring metal layer on said doped getter layer. The present invention also provides a corresponding integrated semiconductor structure and a semiconductor memory device.
摘要翻译：本发明提供一种用于集成半导体结构的制造方法，包括以下步骤：提供具有主表面的半导体衬底; 在所述主表面上形成布线金属层; 在所述布线金属层上形成掺杂的吸气剂层; 以及在所述掺杂的吸气剂层上形成至少一个附加的布线金属层。本发明还提供了相应的集成半导体结构和半导体存储器件。

10. 发明申请

US20060276019A1 Method for production of contacts on a wafer 审中-公开
标题翻译：在晶片上生产触点的方法
公开(公告)号：US20060276019A1
公开(公告)日：2006-12-07
申请号：US11503557
申请日：2006-08-11
申请人： Werner Graf , Henning Haffner , Johannes Kowalewski , Lars Heineck
发明人： Werner Graf , Henning Haffner , Johannes Kowalewski , Lars Heineck
IPC分类号： H01L21/3205 , H01L21/44
CPC分类号： H01L27/10888 , H01L21/76897
摘要： The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.
摘要翻译：本发明涉及一种用于在晶片上生产触点的方法，优选借助于光刻工艺。优选实施例提供一种克服复杂点/孔光刻工艺的缺点的方法，并且避免了工艺复杂性的任何增加。该方法的实现是使用两层延伸的条状结构来构造触点。第一层中的带状结构相对于第二层中的带状结构以预定角度旋转，并且触点形成在两层中条带结构的相互重叠的区域中。

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