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    • 2. 发明申请
    • SCHOTTKY DIODE WITH SILVER LAYER CONTACTING THE ZnO AND MgxZn1-xO FILMS
    • 肖特基二极管与银层接触ZnO和MgxZn1-xO膜
    • WO2003061020A1
    • 2003-07-24
    • PCT/US2002/017555
    • 2002-05-30
    • RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    • LU, YichengSHENG, HaifengMUTHUKUMAR, SriramEMANETOGLU, Nuri, WilliamZHONG, Zian
    • H01L31/108
    • H01L31/0392H01L31/022408H01L31/108H01L31/1123Y02E10/50
    • In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and Mg x Zn 1-x O epitaxial films. The ZnO and Mg x Zn 1-x O films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and Mg x Zn 1-x O films using silver and aluminium as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistor (MESFETs) and more.
    • 在本发明中,提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长,肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。 肖特基二极管具有圆形图案,其中内圆是肖特基接触,外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造,而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比,这些检测器显示低频光响应,高速光响应,较低的漏电流和低噪声性能。 本发明还可应用于光学调制器,金属半导体场效应晶体管(MESFET)等。