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1. 发明专利

JP2006273586A Ceramic member and production method therefor 有权
标题翻译：陶瓷会员及其生产方法
公开(公告)号：JP2006273586A
公开(公告)日：2006-10-12
申请号：JP2005090236
申请日：2005-03-25
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KOBAYASHI YOSHIMASA , HAYASE TORU , YAMADA NAOHITO
IPC分类号： C04B41/88 , C04B35/581 , C04B35/64 , H01L21/02 , H01L21/683 , H05B3/10 , H05B3/20 , H05B3/74
CPC分类号： C04B35/581 , C04B35/6303 , C04B35/645 , C04B37/021 , C04B2235/3225 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/6581 , C04B2235/77 , C04B2237/366 , C04B2237/403 , H01L21/67103 , H01L21/6831
摘要： PROBLEM TO BE SOLVED: To provide a ceramic member having excellent thermal uniformity. SOLUTION: The ceramic member 10 is provided with a ceramic sintered compact 11 and a metallic member 12 including the metal element formed in contact with the ceramic sintered compact 11. The thickness t of a degenerated layer 11a on the periphery of the metallic member 12 in the ceramic sintered compact 11 is suppressed to ≤300 μm. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的热均匀性的陶瓷构件。＆lt; P＆gt;解决方案：陶瓷构件10设置有陶瓷烧结体11和包括与陶瓷烧结体11接触形成的金属元素的金属构件12.金属构件10的外围的退化层11a的厚度t 陶瓷烧结体11中的构件12被抑制为≤300μm。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005029458A Aluminum nitride sintered compact, method of manufacturing aluminum nitride and method of evaluating aluminum nitride 有权
标题翻译：氮化铝烧结紧凑型，制造氮化铝的方法和评估氮化铝的方法
公开(公告)号：JP2005029458A
公开(公告)日：2005-02-03
申请号：JP2004155179
申请日：2004-05-25
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KOBAYASHI YOSHIMASA , HAYASE TORU , YAMADA NAOHITO
IPC分类号： C04B35/581 , C01B21/072 , C04B35/645
CPC分类号： C04B35/581 , C04B35/6303 , C04B35/645 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3418 , C04B2235/3869 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/963 , Y10T279/23
摘要： PROBLEM TO BE SOLVED: To prevent the omission of aluminum nitride particles from an aluminum nitride sintered compact. SOLUTION: The fracture toughness and the intergranular fracture occurrence rate of the aluminum nitride sintered compact are measured and the intergranular fracture toughness K IC gb determined by the following equation is controlled to ≥1.6 MPa×m 1/2 . The equation is K IC gb =K IC ×cos 2 (π×PIF/200), where K IC is the fracture toughness (MPa×m 1/2 ) and PIF is the intergranular fracture occurrence rate (%). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止从氮化铝烧结体中省去氮化铝颗粒。解决方案：测量氮化铝烧结体的断裂韧性和晶间断裂发生率，并且通过下式确定晶间断裂韧性K gb 控制在≥1.6MPa×m 。该方程式是K gb = K ×cos 2 （π×PIF / 200），其中K 断裂韧性（MPa×m 1/2 ），PIF为晶间断裂发生率（％）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2012216786A Member for semiconductor manufacturing apparatus 有权
标题翻译：半导体制造设备会员
公开(公告)号：JP2012216786A
公开(公告)日：2012-11-08
申请号：JP2012058586
申请日：2012-03-15
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KIDA MASAHIRO , HAYASE TORU , KATSUTA YUJI
IPC分类号： H01L21/683 , C04B37/02 , C23C16/458 , C23C16/509 , H02N1/00
CPC分类号： H01L21/6833
摘要： PROBLEM TO BE SOLVED: To reduce a residual stress in bonding, prevent a crack from generating on a ceramic base, and obtain a sufficient bonding strength even when an operating temperature is 200°C.SOLUTION: In the electrostatic chuck which includes: a ceramic base 12 having an electrode 14 embedded therein; an electrode terminal 14a that is exposed to the bottom surface of a recessed portion 16 provided on a back surface of the ceramic base 12; a power supply member 20 for supplying electric power to the electrode 14; and a bonding layer 22 which connects the power supply member 20 to the ceramic base 12, the bonding layer 22 is formed of an AuGe-based alloy, an AuSn-based alloy or an AuSi-based alloy, and the ceramic substrate 12 and the power supply member 20 are selected so that a difference D in thermal expansion coefficient obtained by subtracting the thermal expansion coefficient of the ceramic base 12 from the thermal expansion coefficient of the power supply member 20 becomes -2.2≤D≤6 (unit: ppm/K).
摘要翻译：要解决的问题为了减少接合中的残余应力，防止在陶瓷基体上产生裂纹，并且即使在工作温度为200℃时也获得足够的接合强度。解决方案：在静电卡盘中，其包括：嵌入有电极14的陶瓷基座12; 暴露于设置在陶瓷基体12的背面的凹部16的底面的电极端子14a; 用于向电极14供电的供电部件20; 以及将电源构件20连接到陶瓷基体12的接合层22，接合层22由AuGe系合金，AuSn系合金或AuSi系合金构成，陶瓷基板12和选择供电构件20，使得通过从供电构件20的热膨胀系数减去陶瓷基座12的热膨胀系数而获得的热膨胀系数的差D为-2.2≤D≤6（单位：ppm / K）。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2008239387A Aluminum nitride corrosion resistant member and member for semiconductor manufacturing apparatus 有权
标题翻译：氮化铝耐腐蚀成员和半导体制造设备的会员
公开(公告)号：JP2008239387A
公开(公告)日：2008-10-09
申请号：JP2007080701
申请日：2007-03-27
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： TERATANI NAOMI , YAMADA NAOHITO , KOBAYASHI YOSHIMASA , HAYASE TORU , KATSUTA YUJI
IPC分类号： C04B35/581 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride corrosion resistant member which retains characteristics inherent to aluminum nitride and has resistance controlled in a wide range. SOLUTION: By forming a continuous grain boundary phase at least containing calcium (Ca), aluminum (Al) and oxygen (O) in an aluminum nitride, lowering of resistance without damaging characteristics inherent to aluminum nitride is realized. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种保留氮化铝固有特性并具有大范围电阻控制的氮化铝耐蚀部件。解决方案：通过在氮化铝中形成至少含有钙（Ca），铝（Al）和氧（O）的连续晶界相，实现了不损害氮化铝固有特性的电阻的降低。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006001834A Aluminum nitride ceramic, member for producing semiconductor and method for producing aluminum nitride ceramic 有权
标题翻译：氮化铝陶瓷，制造半导体的制造商和氮化铝陶瓷的制造方法
公开(公告)号：JP2006001834A
公开(公告)日：2006-01-05
申请号：JP2005178590
申请日：2005-06-17
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KOBAYASHI YOSHIMASA , YAMADA NAOHITO , HAYASE TORU
IPC分类号： C04B35/581 , C04B41/85 , H01L21/683
CPC分类号： C04B35/581 , C04B35/645 , C04B35/65 , C04B41/009 , C04B41/5031 , C04B41/87 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/652 , C04B2235/75 , C04B2235/80 , C04B2235/85 , C04B2235/9692 , Y10T428/2975 , C04B41/4535 , C04B41/5029 , C04B41/5045 , C04B41/0072 , C04B41/4519 , C04B41/455 , C04B41/53
摘要： PROBLEM TO BE SOLVED: To improve corrosion resistance, while maintaining the characteristics of aluminum nitride. SOLUTION: The aluminum nitride ceramic 10 comprises aluminum nitride particles and grain-boundary phases. Furthermore, the aluminum nitride ceramic 10 has a grain boundary phase-rich layer 12 containing more grain boundary phases in the surface layer than in the inner part 11. And the grain boundary phases in the grain boundary phase-rich layer 12 contains at least one kind element of rare earth elements or alkaline earth elements. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高耐腐蚀性，同时保持氮化铝的特性。解决方案：氮化铝陶瓷10包括氮化铝颗粒和晶界相。此外，氮化铝陶瓷10具有在表层中比在内部11中含有更多的晶界相的晶界相富集层12.晶界相富层12中的晶界相包含至少一个稀土元素或碱土元素的元素。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2015015455A 電圧非直線抵抗体有权
标题翻译：电压非线性电阻
公开(公告)号：JP2015015455A
公开(公告)日：2015-01-22
申请号：JP2014104641
申请日：2014-05-20
申请人：日本碍子株式会社 , Ngk Insulators Ltd
发明人： YAMAZAKI SATORU , HAYASE TORU , MORIMOTO KENJI , KAWASAKI SHINJI
IPC分类号： H01C7/12 , C04B35/453
CPC分类号： H01C10/00 , C01G9/02 , C01P2002/72 , C01P2002/74 , C01P2004/20 , C01P2004/32 , C01P2004/62 , C04B35/453 , C04B2235/3217 , C04B2235/3267 , C04B2235/3275 , C04B2235/3279 , C04B2235/3284 , C04B2235/3291 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/5292 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/72 , C04B2235/787 , H01C7/112 , H01C17/06546
摘要：【課題】高電流領域の電圧が低い電圧非直線抵抗体であって製造が容易なものを提供する。【解決手段】本発明の電圧非直線抵抗体は、酸化亜鉛を主成分とし、下記式で表される酸化亜鉛の(100)面の配向度f(100)が0.40以上のものである。f(100)=I(100)/(I(100)+I(002)+I(101))但し、I(hkl)は(hkl)面のピーク強度(積分値)を表す。【選択図】図1
摘要翻译：要解决的问题：提供一种在大电流区域中呈现低电压且易于制造的电压非线性电阻器。本发明的电压非线性电阻器包括氧化锌作为主要组分。由下式表示的氧化锌（100）面的取向度f（100）为0.40以上：f（100）= I（100）/（I（100）+ I（002）+ I ）），条件是I（hkl）表示（hkl）平面的峰值强度（即积分值）。

7. 发明专利

JP2004262750A Aluminum nitride-based material and component for apparatus to manufacture semiconductor 有权
公开(公告)号：JP2004262750A
公开(公告)日：2004-09-24
申请号：JP2004033892
申请日：2004-02-10
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KOBAYASHI YOSHIMASA , HAYASE TORU , TERATANI NAOMI , YOSHIKAWA JUN , YAMADA NAOHITO
IPC分类号： C04B35/581 , H01L21/68 , H01L21/683
CPC分类号： C01B21/0602 , C01B21/072 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2006/40 , C04B35/581
摘要： PROBLEM TO BE SOLVED: To provide a new aluminum nitride-based material whose base is aluminum nitride and whose volume resistivity at room temperature is low. SOLUTION: The aluminum nitride-based material whose main component is aluminum nitride contains europium of 0.03 mol% or more in terms of an oxide and contains an aluminum nitride phase and a europium-aluminum oxide phase, or contains europium and samarium whose total content is 0.09 mol% or more in terms of an oxide and contains the aluminum nitride phase and a complex oxide phase containing at least europium and aluminum. COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2011168472A Alumina sintered body, method for producing the same and semiconductor manufacturing apparatus member 有权
标题翻译：铝氧化物烧结体及其制造方法及半导体制造装置
公开(公告)号：JP2011168472A
公开(公告)日：2011-09-01
申请号：JP2010056466
申请日：2010-03-12
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： TERATANI NAOMI , HAYASE TORU , KATSUTA YUJI , KIDA MASAHIRO
IPC分类号： C04B35/111 , C04B35/645 , C04B41/88 , H01B3/12 , H01L21/683
CPC分类号： C04B35/111 , B32B18/00 , C04B35/645 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/3222 , C04B2235/445 , C04B2235/5445 , C04B2235/656 , C04B2235/6567 , C04B2235/658 , C04B2235/6581 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/963 , C04B2237/343
摘要： PROBLEM TO BE SOLVED: To sinter a molded body produced with general alumina powder at low temperature.
SOLUTION: The method for producing the alumina sintered body comprises: a step (a) molding a powdery mixture of Al
2 O
3 and MgF
2 or a powdery mixture of Al
2 O
3 , MgF
2 and MgO into a molded body with a prescribed shape; a step (b) of performing hot press-firing of the molded body in a vacuum atmosphere or a nonoxidizing atmosphere to obtain an alumina sintered body, wherein, when the amount of use of MgF
2 to 100 pts.wt. of Al
2 O
3 is X (pts.wt.) and hot press firing temperature is defined as Y(°C), the hot press firing temperature is set to satisfy the following equations (1) to (4): 1120≤Y≤1300 (1), 0.15≤X≤1.89 (2), Y≤-78.7X+1349 (3), and Y≥-200X+1212 (4).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：在低温下烧结由一般氧化铝粉末制成的成型体。解决方案：制造氧化铝烧结体的方法包括：（a）将Al 2 SB 3 O 3 / SB 3的粉末混合物和MgF 2 / SB>或Al 2 至100重量份时 .wt。的比例为X（重量），热压烧成温度定义为Y（℃），将热压烧成温度设定为满足以下的式（1）〜（4）：1120≤Y≤1300（1），0.15≤X≤1.89（2），Y≤-78.7X + 1349（3），Y≥-200X + 1212（4）。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010180126A Method for producing aluminum nitride single crystal 有权
标题翻译：用于生产氮化钠单晶的方法
公开(公告)号：JP2010180126A
公开(公告)日：2010-08-19
申请号：JP2010054598
申请日：2010-03-11
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： KOBAYASHI YOSHIMASA , HAYASE TORU , YAMADA NAOHITO
IPC分类号： C30B29/38 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride single crystal, by which an aluminum nitride single crystal being sufficiently large for practical use can be obtained at low cost in a short time and which has high productivity and wide usability.
SOLUTION: The method for producing an aluminum nitride single crystal includes: preparing a raw material composition 10 containing aluminum oxynitride and/or an aluminum oxynitride precursor being converted into aluminum oxynitride by heating; heating the raw material composition 10 at a temperature of 1,600-2,400°C to synthesize aluminum nitride; and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造氮化铝单晶的方法，通过该方法可以在短时间内以低成本获得实际使用的氮化铝单晶，并且具有高的生产率和宽可用性。解决方案：制造氮化铝单晶的方法包括：通过加热制备含有氮氧化铝和/或氮氧化铝前体的原料组合物10，将其转化为氮氧化铝; 在1600-2400℃的温度下加热原料组合物10以合成氮化铝; 并引起氮化铝的晶体生长，得到氮化铝单晶。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010120822A Aluminum nitride sintered body, method for producing the same and electrostatic chuck using the same 有权
标题翻译：氮化铝烧结体，其制造方法和使用其的静电卡盘
公开(公告)号：JP2010120822A
公开(公告)日：2010-06-03
申请号：JP2008297438
申请日：2008-11-21
申请人： Ngk Insulators Ltd , 日本碍子株式会社
发明人： TERATANI NAOMI , HAYASE TORU , KATSUTA YUJI
IPC分类号： C04B35/581 , H01L21/683 , H02N13/00
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3232 , C04B2235/3865 , C04B2235/3886 , C04B2235/3895 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6567 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/80 , C04B2235/85 , C04B2235/9607 , H01L21/6833
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered body containing no samarium and having performances equivalent to an aluminum nitride sintered body containing samarium. SOLUTION: The method for producing the aluminum nitride sintered body contains (a) a process for preparing a mixed powder containing AlN, 2-10 pts.wt. Eu 2 O 3 to 100 pts.wt. AlN, 2-10 Al 2 O 3 to Eu 2 O 3 in molar ratio and 0.05-1.2 TiO 2 to Al 2 O 3 in molar ratio and containing no Sm, (b) a process for preparing a formed body by using the mixed powder and (c) a process for performing a hot press firing in a vacuum or inert gas atmosphere at firing the formed body. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供不含钐的氮化铝烧结体，其性能与含有钐的氮化铝烧结体相当。解决方案：制造氮化铝烧结体的方法包括（a）制备含有AlN的混合粉末的方法，2-10重量份 Eu 2 3 至100重量份 AlN，2-10 Al 2 SBB与O 2 / SB 3的摩尔比和0.05-1.2TiO 2 （SB）2 与Al 2 3 摩尔比，不含Sm，（b）使用混合粉末制备成形体的方法和（c）在烧成成形体时在真空或惰性气体气氛中进行热压烧结的方法。版权所有（C）2010，JPO＆INPIT

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