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1. 发明专利

MY116530A PROCESS AND APPARATUS FOR FORMING BALL BUMPS 未知
公开(公告)号：MY116530A
公开(公告)日：2004-02-28
申请号：MYPI9602413
申请日：1996-06-14
申请人： NIPPON STEEL CORP
发明人： HOSHIBA HIROSHI , TATSUMI KOHEI , KONDA MASASHI , KAWAKAMI YOJI
IPC分类号： B23K1/06 , H01L21/60 , H01L21/321
摘要： A PROCESS OF FORMING BALL BUMPS FOR ELECTRICAL CONNECTION TO AN INTEGRATED CIRCUIT, THE PROCESS COMPRISING THE STEPS OF : APPLYING A VIBRATION AT A SMALL AMPLITUDE TO A VESSEL (11) CONTAINING SMALL BALLS (B) OF AN ELECTROCONDUCTIVE MATERIAL TO CAUSE THE SMALL BALLS TO JUMP UP ABOVE THE VESSEL; HOLDING AND ARRANGING THE SMALL BALLS ON AN ARRANGEMENT BASEPLATE (15) BY ATTRACTING THE JUMPING UP SMALL BALLS TO ATTRACTION OPENINGS (14) PROVIDED IN THE ARRANGEMENT BASEPLATE IN POSITIONS CORRESPONDING TO POSITIONS OF AT LEAST ONE SET OF THE ELECTRODE PADS OF ONE SEMICONDUCTOR CHIP; REMOVING EXCESS SMALL BALLS (B') ADHERED EITHER TO THE ARRANGEMENT BASEPLATE OR TO THE SMALL BALLS ATTRACTED TO THE OPENINGS; AND SIMULTANEOUSLY BONDING THE SMALL BALLS HELD AND ARRANGED ON THE ARRANGEMENT BASEPLATE TO BONDING SPOTS ARRANGED IN POSITIONS CORRESPONDING TO SAID POSITIONS OF SAID AT LEAST ONE SET OF THE ELECTRODE PADS. (FIG 2)

2. 发明专利

MY130223A SEMICONDUCTOR DEVICE PROVIDED WITH LOW MELTING POINT METAL BUMPS AND PROCESS FOR PRODUCING SAME 未知
公开(公告)号：MY130223A
公开(公告)日：2007-06-29
申请号：MYPI9703950
申请日：1997-08-27
申请人： NIPPON STEEL CORP
发明人： TATSUMI KOHEI , SHIMOKAWA KENJI , HASHINO EIJI
IPC分类号： B23K31/00 , H01L21/60 , H01L23/485 , H05K3/34
摘要： A SEMICONDUCTOR DEVICE (1) COMPRISING ELECTRODES (8) FORMED ON A SEMICONDUCTOR CHIP (2) AND BUMPS (3) WHICH CONSIST OF A LOW MELTING POINT METAL BALL SPHERICALLY FORMED AND HAVING A GIVEN SIZE AND WHICH ARE ADHESIVE BONDED TO THE ELECTRODES (8). THE ELECTRODES (8) ARE FORMED FROM AN ELECTRODE MATERIAL (5) OF CU OR A CU ALLOY, AL OR AN AL ALLOY, OR AU OR A AU ALLOY.WHEN THE ELECTRODE MATERIAL (5) IS COMPOSED OF A1 OR AN AL ALLOY, THE ELECTRODES CONTAIN, ON THE ELECTRODE MATERIAL LAYER OF AL OR AN AI ALLOY, AT LEAST ONE LAYER (6) COMPOSED OF A METAL OR METAL ALLOY (PREFERABLY A METAL SELECTED FORM TI, W, NI, CR, AU, PD, CU, PT, AG, SN OR PB, OR AN ALLOY OF THESE METALS) HAVING A MELTING POINT HIGHER THAN THE ELECTRODE MATERIAL (5). THE LOW MELTING POINT METAL BALLS (3) ARE ADHESIVE BONDED TO THE ELECTRODES (8) PREFERABLY WITH A FLUX. THE LOW MELTING POINT METAL BALLS (3) ADHESIVE BONDED TO THE RESPECTIVE ELECTRODES (8) MAY ALSO BE REFLOWED TO FORM SEMISPHERICAL BUMPS (10) BEFORE USE.(FIG 2)

3. 发明公开

EP1249302A4 SOLDER ALLOY, ELECTRONIC MEMBER HAVING SOLDER BALL AND SOLDER BUMP 审中-公开
标题翻译：焊料合金，具有焊球与-HÖCKER电子部件
公开(公告)号：EP1249302A4
公开(公告)日：2004-10-20
申请号：EP00976358
申请日：2000-11-20
申请人： NIPPON STEEL CORP , NIPPON MICROMETAL CORP
发明人： TANAKA MASAMOTO , ENDO MICHIO , HASHINO EIJI , TATSUMI KOHEI , NAKAMORI TAKASHI , FUJISHIMA MASAMI
IPC分类号： B23K35/14 , B23K35/26 , H01L21/60 , B23K1/00 , H05K3/34
CPC分类号： B23K35/262 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/13099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/351 , H01L2924/00 , H01L2224/05599
摘要： A lead-free solder alloy, characterized in that it has a chemical composition: Ag: 2 to 3 wt %, Cu: 0.3 to 1.5 wt %, Bi: 0.05 to 1.5 wt %, Sb: 0.2 to 1.5, balance: Sn and inevitable impurities, with the proviso that the total content of Ag, Cu, Sb and Bi is 5 wt % or less, and is capable of forming a smooth surface after reflow treatment; and an electronic member, such as a semiconductor device, manufactured by the use of the lead-free solder alloy. The solder alloy has an appropriate melting point and excellent resistance to thermal fatigue, and can form, after solder reflow, a surface having smoothness and excellent properties being sufficient to permit the optical evaluation for the formation of a bump, and thus can be used as an excellent material for solder bumps of an electronic member.

4. 发明专利

DE69740081D1 KUGELANORDNUNGSSUBSTRAT ZUR HERSTELLUNG VON HÖCKERN, KUGELANORDNUNGSKOPF, KUGELANORDNUNGSVORRICHTUNG UND KUGELANORDNUNGSVERFAHREN 未知
公开(公告)号：DE69740081D1
公开(公告)日：2011-01-27
申请号：DE69740081
申请日：1997-08-28
申请人： NIPPON STEEL CORP
发明人： SHIMOKAWA KENJI , HASHINO EIJI , TATSUMI KOHEI
IPC分类号： H01L21/321 , H01L21/48 , H01L21/60 , H01L23/12 , H05K1/02 , H05K3/34

5. 发明专利

MY119289A GOLD ALLOY THIN WIRE FOR SEMICONDUCTOR DEVICES 未知
公开(公告)号：MY119289A
公开(公告)日：2005-04-30
申请号：MYPI9703214
申请日：1997-07-16
申请人： NIPPON STEEL CORP
发明人： UNO TOMOHIRO , TATSUMI KOHEI
IPC分类号： B21C37/00 , C22C5/02
摘要： TO PROVIDE A GOLD ALLOY THIN WIRE ADVANTAGEOUSLY APPLICABLE TO HIGH DENSITY PACKAGING OF SEMICONDUCTOR DEVICES, IN WHICH THE WIRE DEFORMATION UPON RESIN MOLDING IS REDUCED TO SUCCESSFULLY ACHIEVE REDUCTION IN THE BONDING PITCH AND THE WIRE DIAMETER, A GOLD ALLOY THIN WIRE ACCORDING TO THE PRESENT INVENTION CONSISTS OF 0.015 TO 1.0 WTU, 0.0002 TO 0.02 WTA, AND THE BALANCE CONSISTING OF AU AND UNAVOIDABLE IMPURITIES. PREFERABLY, THE CU CONTENT IS 0.1 TO 1.0 WTAND THE CA CONTENT IS 0.001 TO 0.2 WT, AND MORE PREFERABLY, CU AND CA ARE PRESENT IN A WEIGHT CONTENT RATIO CU/CA OF FROM 40 TO 800. THE GOLD ALLOY THIN WIRE FURTHER PREFERABLY CONTAINS ONE OR MORE OF PT, PD AND IN IN A TOTAL AMOUNT OF FROM 0.01 TO 3.0 WTAND/OR ONE OR MORE OF Y, LA, AND CE IN A TOTAL AMOUNT OF FROM 0.0003 TO 0.03 WT

6. 发明专利

MY137479A BONDING WIRE FOR SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 未知
公开(公告)号：MY137479A
公开(公告)日：2009-01-30
申请号：MYPI20014368
申请日：2001-09-18
申请人： NIPPON STEEL CORP
发明人： UNO TOMOHIRO , TERASHIMA SHINICHI , TATSUMI KOHEI
IPC分类号： B21C37/04 , B32B15/01 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L23/49
摘要： THE PRESENT INVENTION PROVIDES A BONDING WIRE FOR A SEMICONDUCTOR DEVICE,HAVING HIGH STRENGHT AND HIGH FLEXURAL RIDIGATY CONFORMING TO THE TRENDS OF NARROWER PITCHES AND THINNER AND LONGER WIRES,IMPROVED BONDABILITY AND EXCELLENT INDUSTRIAL MASS PRODUCTIVITY.THE PRESENT INVENTION IS A BONDING WIRE FOR A SEMICONDUCTOR DEVICE,HAVING A CORE WIRE AND A PERIPHERY CONSISTING OF A CONDUCTIVE METAL MAINLY COMPOSED OF AN ELEMENT COMMON TO BOTH AND/OR AN ALLOYS OF SAID METAL AND,BETWEEN THE CORE WIRE AND THE PERIPHERY,A DIFFUSION LAYER OR AN INTERMETALLIC COMPOUND LAYRE COMPOSED OF THE ELEMENTS CONSTITUTING THE CORE WIRE AND THE PERIPHERY AND A BONDING WIRE FOR A SEMICONDUCTOR DEVICE CHARACTERIZED BY HAVING A CORE WIRE CONSISTING OF A FIRST CONDUCTIVE METAL OR AN ALLOY MAINLY COMPOSED OF THE FIRST CONDUCTIVE METAL,A PERIPHERY CONSISTING OF A SECOND CONDUCTIVE METAL DIFFERENT FROM THE FIRST CONDUCTIVE METAL OF THE CORE WORE OR AN ALLOY MAINLY COMPOSED OF THE SECOND CONDUCTIVE MATAL,AND,BETWEEN THE CORE WIRE AND THE PERIPHERY,A DIFFUSION LAYER OR AN INTERMATALLIC COMPOUND LAYER,AND THE METHOD TO PRODUCE A BONDING WIRE FOR A SEMICONDUCTOR DEVICE FOR SUBJECTING THE OBNDING WIRE TO A DIFFUSION HEAT TREATMENT TO FORM A DIFFUSION LAYER AND/OR AN INTERMETALLIC COMPOUND LAYER AT THE INTERFACE BETWEEN THE CORE WIRE AND THE PERIPHARY.

7. 发明专利

JPH06349895A PLATING CONNECTION EQUIPMENT 失效
公开(公告)号：JPH06349895A
公开(公告)日：1994-12-22
申请号：JP13841593
申请日：1993-06-10
申请人： TOSHIBA CORP , NIPPON STEEL CORP
发明人： KUDO YOSHIMASA , FUJIZU TAKAO , SHIMIZU SHINYA , ONO TAKAHIDE , TATSUMI KOHEI , ANDO TOSHINORI
IPC分类号： H01L21/288 , C25D5/02 , C25D5/08 , C25D7/12 , H01L21/60
摘要： PURPOSE:To provide a plating connection equipment suitable for plating connection between pad electrodes of a semiconductor element and inner leads. CONSTITUTION:This equipment consists of the following; a means which aligns and fixes pad electrodes 12 on a semiconductor element 11 and the tip parts of inner leads 13, a plating liquid injection means for injecting plating liquid 14 against the semiconductor element 11 and the inner leads 13, a counter electrode 17 arranged horizontally to the semiconductor element and the inner leads 13, and a voltage applying means which applies voltages to the inner leads 13 and the counter electrode 17.

8. 发明专利

JPH06151504A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH06151504A
公开(公告)日：1994-05-31
申请号：JP29515492
申请日：1992-11-04
申请人： TOSHIBA CORP , NIPPON STEEL CORP
发明人： SHIMIZU SHINYA , FUJIZU TAKAO , KUDO YOSHIMASA , ONO TAKAHIDE , TATSUMI KOHEI , ANDO TOSHINORI
IPC分类号： H01L21/60 , H01L23/50
摘要： PURPOSE:To provide an electrode structure of a semiconductor chip which is suitable for a plating bonding method. CONSTITUTION:An electrode of a semiconductor chip 2 is formed of an aluminum layer 1 and a copper layer 4 formed on this aluminum layer 1, and connection of the fore end of a lead of a lead frame or a TAB tape with the electrode of the semiconductor chip 2 is conducted by a plating bonding method.

9. 发明专利

DE69738324T2 未知
公开(公告)号：DE69738324T2
公开(公告)日：2008-10-09
申请号：DE69738324
申请日：1997-08-27
申请人： NIPPON STEEL CORP
发明人： TATSUMI KOHEI , SHIMOKAWA KENJI , HASHINO EIJI
IPC分类号： H01L23/485 , H01L21/60 , H05K3/34
摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps 3 which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

10. 发明专利

DE69738324D1 未知
公开(公告)号：DE69738324D1
公开(公告)日：2008-01-10
申请号：DE69738324
申请日：1997-08-27
申请人： NIPPON STEEL CORP
发明人： TATSUMI KOHEI , SHIMOKAWA KENJI , HASHINO EIJI
IPC分类号： H01L23/485 , H01L21/60 , H05K3/34
摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps 3 which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

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