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1. 发明申请

US20070290761A1 Signal amplifier circuit 有权
标题翻译：信号放大电路
公开(公告)号：US20070290761A1
公开(公告)日：2007-12-20
申请号：US11783327
申请日：2007-04-09
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
IPC分类号： H03F1/34
CPC分类号： H03F3/45 , G01D3/021 , G01D3/028 , G01L27/007
摘要： A signal amplifier circuit includes a negative feedback amplifier circuit having an output terminal, a first voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a second voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a first reference voltage supply applying a first reference voltage to the first voltage limiting device, a second reference voltage supply applying a second reference voltage to the second voltage limiting device. The first voltage limiting device is configured to fix a lower limit saturation voltage at the first reference voltage. The second voltage limiting device is configured to fix an upper limit saturation voltage at the second reference voltage.
摘要翻译：信号放大器电路包括具有输出端子的负反馈放大器电路，用于限制来自负反馈放大器电路的输出电压的第一电压限制装置，用于限制来自负反馈放大器电路的输出电压的第二电压限制装置，将第一参考电压施加到所述第一电压限制装置的第一参考电压源，向所述第二电压限制装置施加第二参考电压的第二参考电压电源。第一限压装置被配置为固定第一参考电压的下限饱和电压。第二电压限制装置被配置为将第二参考电压的上限饱和电压固定。

2. 发明授权

US07046013B2 Open-circuit failure detection circuit 有权
公开(公告)号：US07046013B2
公开(公告)日：2006-05-16
申请号：US10401772
申请日：2003-03-31
申请人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G01R31/08
CPC分类号： H02H5/10 , G01R31/025 , G01R31/316
摘要： A broken-wire-failure detection circuit connected to a higher circuit includes a power line, a signal line, a ground line, and at least one of the first resistance device connected between the power line and the signal line and the second resistance device connected between the signal line and the ground line. The broken-wire-failure detection circuit also includes the third resistance device connected between the power line and the ground line, and a signal output circuit connected to the second power line, the second signal line and the second ground line.

3. 发明授权

US06684371B2 Layout of semiconductor integrated circuit 有权
标题翻译：半导体集成电路布局
公开(公告)号：US06684371B2
公开(公告)日：2004-01-27
申请号：US10117340
申请日：2002-04-08
申请人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G06F1750
CPC分类号： G06F17/5068 , H01L2224/05553
摘要： To improve the capability to withstand noises and surges in a semiconductor integrated circuit in which an RC filter for cutting electromagnetic wave noises is integrated with analog circuits and digital circuits, a positive electrode of a capacitor constituting the RC filter is disposed apart from circuit elements or connection lines constituting the circuits at such an interval as to prevent malfunction of the circuit elements resulting from a noise superimposed on the positive electrode, or dielectric breakdown of the capacitor constituting the RC filter and latch-up and dielectric breakdown of the circuit elements resulting from a surge applied to the positive electrode. The interval is larger than the minimum interval required by a layout rule or five times longer than the minimum.
摘要翻译：为了提高在用于切割电磁波噪声的RC滤波器与模拟电路和数字电路集成的半导体集成电路中抵抗噪声和浪涌的能力，构成RC滤波器的电容器的正电极与电路元件或构成电路的连接线以这样的间隔来防止由叠加在正电极上的噪声导致的电路元件的故障，或者构成RC滤波器的电容器的电介质击穿以及由此产生的电路元件的闭锁和电介质击穿施加到正电极的浪涌。间隔大于布局规则所需的最小间隔或比最小值长五倍的间隔。

4. 发明授权

US07525389B2 Signal amplifier circuit with a limiting voltage device 有权
标题翻译：信号放大电路具有极限电压装置
公开(公告)号：US07525389B2
公开(公告)日：2009-04-28
申请号：US11783327
申请日：2007-04-09
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
IPC分类号： H03F1/52
CPC分类号： H03F3/45 , G01D3/021 , G01D3/028 , G01L27/007
摘要： A signal amplifier circuit includes a negative feedback amplifier circuit having an output terminal, a first voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a second voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a first reference voltage supply applying a first reference voltage to the first voltage limiting device, a second reference voltage supply applying a second reference voltage to the second voltage limiting device. The first voltage limiting device is configured to fix a lower limit saturation voltage at the first reference voltage. The second voltage limiting device is configured to fix an upper limit saturation voltage at the second reference voltage.
摘要翻译：信号放大器电路包括具有输出端子的负反馈放大器电路，用于限制来自负反馈放大器电路的输出电压的第一电压限制装置，用于限制来自负反馈放大器电路的输出电压的第二电压限制装置，将第一参考电压施加到所述第一电压限制装置的第一参考电压源，向所述第二电压限制装置施加第二参考电压的第二参考电压电源。第一限压装置被配置为固定第一参考电压的下限饱和电压。第二电压限制装置被配置为将第二参考电压的上限饱和电压固定。

5. 发明授权

US07274543B2 Over-voltage protection circuit 有权
标题翻译：过电压保护电路
公开(公告)号：US07274543B2
公开(公告)日：2007-09-25
申请号：US10401751
申请日：2003-03-31
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Akio Kitamura
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Akio Kitamura
IPC分类号： H02H9/00
CPC分类号： H01L27/0266 , H01L2924/0002 , H02H3/20 , H01L2924/00
摘要： An over-voltage protection circuit for protecting an integrated circuit includes an external power supply terminal to which a power supply voltage is supplied, a grounding terminal to which a ground voltage is supplied, and an internal power supply terminal for supplying the power supply voltage to the integrated circuit. A voltage dividing unit is connected between the external power supply terminal and the grounding terminal for dividing a voltage supplied from the external power supply terminal, and has a Zener diode and a first resistor connected in series. A signal generating unit is connected between the external power supply terminal and the grounding terminal for outputting the power supply voltage or the ground voltage, and a switching unit is connected between the internal power supply terminal and the signal generating unit for performing a switching operation.
摘要翻译：用于保护集成电路的过电压保护电路包括供给电源电压的外部电源端子，提供接地电压的接地端子和用于将电源电压提供给集成电路。分压单元连接在外部电源端子和用于分压从外部电源端子提供的电压的接地端子之间，并具有串联连接的齐纳二极管和第一电阻器。信号发生单元连接在外部电源端子和接地端子之间，用于输出电源电压或接地电压，并且在内部电源端子和信号产生单元之间连接有用于进行开关操作的开关单元。

6. 发明授权

US06962081B2 Semiconductor physical quantity sensor with improved noise resistance 有权
标题翻译：半导体物理量传感器具有改进的抗噪声能力
公开(公告)号：US06962081B2
公开(公告)日：2005-11-08
申请号：US10053528
申请日：2002-01-18
申请人： Katsumichi Ueyanagi , Kazunori Saito , Kimihiro Ashino , Mutsuo Nishikawa , Katsuyuki Uematsu
发明人： Katsumichi Ueyanagi , Kazunori Saito , Kimihiro Ashino , Mutsuo Nishikawa , Katsuyuki Uematsu
IPC分类号： G01L9/00 , G01L9/04 , G01P1/02 , G01P15/08 , G01P15/12 , H01L29/84 , G01P15/00
CPC分类号： G01L19/0084 , G01L19/069 , G01P1/023 , G01P15/123 , H01L2224/05553 , H01L2224/45124 , H01L2224/48247 , H01L2224/49175 , H01L2924/19107 , H01L2924/3025 , H01L2924/00
摘要： An inexpensive, accurate, and reliable semiconductor physical quantity sensor having improved resistance to noise is provided, wherein pads that have been pulled down to ground inside a semiconductor chip are arranged closer to a ground pad, while pads and that have been pulled up to a power supply inside the chip are arranged closer to a power supply pad. Of the digital input/output pads that have undergone digital trimming to obtain a predetermined output, the pulled-down pads and the ground pad are electrically connected to a ground terminal outside the chip via internal exposed portions, wires, and a ground-connecting external wire. The pulled-up pads and the power supply pad are electrically connected to a power supply terminal outside the chip via the internal exposed portions, the wires, and a power-supply-connecting external wire. Terminals may be electrically connected together on a package or a mounting substrate.
摘要翻译：提供了具有改善的抗噪声性能的廉价，准确和可靠的半导体物理量传感器，其中在半导体芯片内被下拉到地的焊盘被布置成更靠近接地焊盘，而焊盘已经被拉到芯片内的电源设置得更靠近电源板。在经过数字修整以获得预定输出的数字输入/输出焊盘中，下拉焊盘和接地焊盘通过内部暴露部分，导线和接地外部电路与芯片外部的接地端子电连接线。上拉焊盘和电源焊盘通过内部暴露部分，电线和电源连接的外部电线电连接到芯片外部的电源端子。端子可以在封装或安装基板上电连接在一起。

7. 发明授权

US07119657B2 Polysilicon resistor semiconductor device 有权
标题翻译：多晶硅电阻半导体器件
公开(公告)号：US07119657B2
公开(公告)日：2006-10-10
申请号：US10120211
申请日：2002-04-10
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Katsuyuki Uematsu
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Katsuyuki Uematsu
IPC分类号： H01C1/012 , H01C7/06
CPC分类号： H01L28/20 , H01L23/522 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a polysilicon resistor that can suppress variations in resistance value in environments with an ambient temperature higher than room temperature. The resistance value Rcon of a polysilicon contact is reduced to 2% or less of the sum of the resistance value Rcon of the polysilicon contact and the resistance value Rpoly of a polysilicon resistor. Hence, a semiconductor device that is not significantly affected by a variation in the resistance of the polysilicon contact is realized. This device suppresses variations in resistance value in environments with an ambient temperature higher than room temperature.
摘要翻译：半导体器件包括可以抑制环境温度高于室温的环境中的电阻值变化的多晶硅电阻器。多晶硅接触的电阻值R SUB降低到多晶硅接触的电阻值R OUT的总和的2％以下，电阻值R _{多晶硅电阻器的多晶硅。因此，实现了不受多晶硅接触电阻变化的显着影响的半导体器件。该装置抑制环境温度高于室温的环境中的电阻值的变化。}

8. 发明授权

US06680512B2 Semiconductor device having an integral protection circuit 有权
标题翻译：具有整体保护电路的半导体装置
公开(公告)号：US06680512B2
公开(公告)日：2004-01-20
申请号：US10121447
申请日：2002-04-12
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu
IPC分类号： H01L2362
CPC分类号： H01L23/5286 , H01L24/05 , H01L27/0251 , H01L2224/05553 , H01L2924/12035 , H01L2924/12036 , H01L2924/12043 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/3011 , H01L2924/00
摘要： A CMOS device with an integral reverse connection protection circuit having a low impedance region, whose impedance becomes lowest when a Vcc pad to which is to be supplied power supply voltage and a GND pad to which is to be supplied ground potential are connected in reverse polarity. The low impedance region, Vcc pad and GND pad are electrically connected through a metal line and a metal line, and current is diverted into the low impedance region during the reverse connection so as to protect an internal circuit. Surge protection elements with identical characteristics are disposed in proximity to three sides or four sides of a pad, and each side of the pad and the surge protection element corresponding thereto are electrically connected to each other, so that surge current applied to the pad is dispersed to the plurality of surge protection elements to protect the internal circuit.
摘要翻译：具有整体反向连接保护电路的CMOS器件，其具有低阻抗区域，当要提供电源电压的Vcc焊盘和要被提供接地电位的GND焊盘的阻抗变为最低时，反相极性连接。低阻抗区域Vcc焊盘和GND焊盘通过金属线和金属线电连接，并且在反向连接期间电流被转移到低阻抗区域中，以保护内部电路。具有相同特性的浪涌保护元件设置在焊盘的三边或四边附近，焊盘和对应于其的浪涌保护元件的每一侧彼此电连接，使得施加到焊盘的浪涌电流被分散到多个浪涌保护元件以保护内部电路。

9. 发明申请

US20060244101A1 SEMICONDUCTOR APPARATUS AND PHYSICAL QUANTITY SENSING APPARATUS 审中-公开
标题翻译：半导体装置和物理量传感装置
公开(公告)号：US20060244101A1
公开(公告)日：2006-11-02
申请号：US11278429
申请日：2006-04-03
申请人： Katsuyuki Uematsu , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Katsumichi Ueyanagi
IPC分类号： H01L29/00
CPC分类号： G01D3/032 , G01L9/06 , G01L19/0084 , G01L19/069 , G01L19/141
摘要： In a semiconductor device, in particular a physical quantity sensing apparatus, the length and the width of the wiring connecting a sensor internal circuit and an output or power supply pad are adjusted so that the total parasitic resistance components R1 parasitic on the wiring and the sum Rf of the resistance values of resistors in the filter circuit for countermeasuring against electromagnetic noises satisfy the relational expression R1/Rf×100
摘要翻译：在半导体装置中，特别是物理量感测装置中，调整连接传感器内部电路和输出或电源焊盘的布线的长度和宽度，使得寄生在布线上的总寄生电阻分量R1和总和用于对抗电磁噪声的滤波电路中的电阻的电阻值的Rf满足关系式R 1 / Rf×100 <25。此外，调整输出或电源焊盘与电容器之间的布线的长度和宽度以及电容器和接地焊盘之间的布线的长度和宽度，使得阻抗Za导致通过寄生电阻分量Ra和输出或电源焊盘与电容器之间的布线的电感分量La，由寄生电阻分量Rk引起的阻抗Zk和电容器之间的布线的电感分量Lk s）和接地焊盘，并且由电容器的电容分量引起的阻抗Zc总是满足要切断的电磁噪声的频率范围内的关系式Za + Zk

10. 发明申请

US20100097146A1 Signal amplification circuit 有权
标题翻译：信号放大电路
公开(公告)号：US20100097146A1
公开(公告)日：2010-04-22
申请号：US12588123
申请日：2009-10-05
申请人： Mutsuo Nishikawa , Katsuyuki Uematsu , Kazuhiro Watsunami
发明人： Mutsuo Nishikawa , Katsuyuki Uematsu , Kazuhiro Watsunami
IPC分类号： H03F1/34
CPC分类号： H03F3/45179 , H03F3/45085 , H03F3/45475 , H03F3/45659 , H03F2200/261 , H03F2203/45418 , H03F2203/45424 , H03F2203/45646
摘要： This invention provides a low-current consumption type signal amplification circuit, which limits the output voltage to fix a lower-limit (upper-limit) saturation voltage of the amplification circuit at a predetermined lower-limit (upper-limit) limiting voltage. The signal amplification circuit comprises a negative feedback amplification circuit, a lower-limit voltage limiting circuit and an upper-limit voltage limiting circuit. The lower-limit voltage limiting circuit increases a resistance between an output terminal of the negative feedback amplification circuit and a ground terminal when the output voltage of the negative feedback amplification circuit falls below the lower-limit limiting voltage. The upper-limit voltage limiting circuit increases a resistance between the output terminal of the negative feedback amplification circuit and a high-potential side of a power supply when the output voltage of the negative feedback amplification circuit rises above the upper-limit limiting voltage.
摘要翻译：本发明提供了一种低电流消耗型信号放大电路，其限制输出电压，将放大电路的下限（上限）饱和电压固定在预定的下限（上限）限制电压。信号放大电路包括负反馈放大电路，下限电压限制电路和上限电压限制电路。当负反馈放大电路的输出电压低于下限极限电压时，下限电压限制电路增加负反馈放大电路的输出端子与接地端子之间的电阻。当负反馈放大电路的输出电压超过上限极限电压时，上限电压限制电路增加负反馈放大电路的输出端子与电源的高电位侧之间的电阻。

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