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1. 发明授权

US09230564B2 Methods for fabricating magnetic transducers using post-deposition tilting 有权
标题翻译：使用后沉积倾斜制造磁换能器的方法
公开(公告)号：US09230564B2
公开(公告)日：2016-01-05
申请号：US13532716
申请日：2012-06-25
申请人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
发明人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
IPC分类号： G11B5/127 , H04R31/00 , G11B5/008 , G11B5/31 , G11B5/39
CPC分类号： G11B5/00821 , G11B5/3163 , G11B5/3906 , H04R31/00 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.
摘要翻译：在一个一般实施例中，提供了一种使用后沉积倾斜来制造磁性结构的方法。薄膜换能器结构形成在基板的基本上平面的部分上，使得薄膜换能器结构的沉积平面基本上平行于基板的平面。此外，使薄膜换能器结构相对于基板的平面成一定角度倾斜。薄膜换能器在倾斜后固定成角度。

2. 发明授权

US08957378B2 Nano-tip spacers for precise gap control and thermal isolation in MEMS structures 有权
标题翻译：用于MEMS结构中的精确间隙控制和热隔离的纳米尖端间隔物
公开(公告)号：US08957378B2
公开(公告)日：2015-02-17
申请号：US13525397
申请日：2012-06-18
申请人： Dan Corcos , Michel Despont , Danny Elad , Bernd Gotsmann , Lukas Kull , Thomas E. Morf
发明人： Dan Corcos , Michel Despont , Danny Elad , Bernd Gotsmann , Lukas Kull , Thomas E. Morf
IPC分类号： G01J5/02 , G01J5/34 , G01J5/08 , G01J5/22 , B81B3/00
CPC分类号： G01J5/34 , B81B3/0081 , G01J5/0235 , G01J5/024 , G01J5/0837 , G01J5/22
摘要： A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor separated by a plurality of nano-tip spacers that determine the gap distance. The capacitor couples energy from the antenna to the thermal sensor.
摘要翻译：一种太赫兹辐射检测器，包括通过隔离热空气间隙与悬浮平台分离的垂直天线，用于将太赫兹辐射能量集中到位于热传感器元件的较小悬置MEMS平台上。太赫兹光子能量通过由多个确定间隙距离的多个纳米尖端间隔物隔开的耦合电容器的板之间的隔热气隙转换成电能。电容器将能量从天线耦合到热传感器。

3. 发明授权

US08847079B2 Method for producing an integrated device 有权
标题翻译：集成装置的制造方法
公开(公告)号：US08847079B2
公开(公告)日：2014-09-30
申请号：US13470491
申请日：2012-05-14
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K1/00 , H05K1/16 , B81C1/00 , B81C3/00
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.
摘要翻译：用于制造集成装置的制品包括可变形层和可释放地附接在可变形层的一个表面上的一个或多个部件。

4. 发明授权

US08387160B2 Scanning probe-based lithography method 失效
标题翻译：扫描探针型光刻法
公开(公告)号：US08387160B2
公开(公告)日：2013-02-26
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G01Q60/24
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。聚合物含有热可逆交联。还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征交联。

5. 发明授权

US08327461B2 High-speed scanning probe microscope 有权
标题翻译：高速扫描探针显微镜
公开(公告)号：US08327461B2
公开(公告)日：2012-12-04
申请号：US13146355
申请日：2010-01-15
申请人： Harish Bhaskaran , Michel Despont , Abu Sebastian
发明人： Harish Bhaskaran , Michel Despont , Abu Sebastian
IPC分类号： G01Q60/14 , G01N13/16 , G01N13/10
CPC分类号： G01Q60/16
摘要： The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.
摘要翻译：本发明涉及用于扫描探针显微镜的探针。探针20包括隧道电流传导部分30和隧道电流绝缘部分40.所述部分被构造成使得绝缘部分确定导电部分30和样品表面之间的最小距离。本发明还可以涉及具有这种探针的扫描探针显微镜和相应的扫描探针显微镜方法。由于到达样品表面100的距离实际上由绝缘部件40确定，因此容易且快速地实现了探针20相对于样品表面的垂直位置的控制。部件的构造允许对样品表面进行快速扫描，由此可以实现高速成像。此外，实施例允许通过隧道效应准确地捕获地形变化。

6. 发明申请

US20120222294A1 METHOD FOR PRODUCING AN INTEGRATED DEVICE 有权
标题翻译：用于生产集成装置的方法
公开(公告)号：US20120222294A1
公开(公告)日：2012-09-06
申请号：US13470491
申请日：2012-05-14
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K13/04
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.
摘要翻译：用于制造集成装置的制品包括可变形层和可释放地附接在可变形层的一个表面上的一个或多个部件。

7. 发明申请

US20120164813A1 RESISTOR WITH IMPROVED SWITCHABLE RESISTANCE AND NON-VOLATILE MEMORY DEVICE 失效
标题翻译：具有改进的可切换电阻和非易失性存储器件的电阻器
公开(公告)号：US20120164813A1
公开(公告)日：2012-06-28
申请号：US13411610
申请日：2012-03-04
申请人： Christophe P. Rossel , Michel Despont
发明人： Christophe P. Rossel , Michel Despont
IPC分类号： H01L21/02
CPC分类号： H01L45/04 , H01L27/20 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： A resistor with improved switchable resistance includes a first electrode, a second electrode, and an insulating dielectric structure between the first and second electrodes. The insulating dielectric structure includes a confined conductive region providing a first resistance state and a second resistance state; the resistance state of the confined conductive region being switchable between the first and second resistance states by a control signal.
摘要翻译：具有改善的可切换电阻的电阻器包括在第一和第二电极之间的第一电极，第二电极和绝缘电介质结构。绝缘电介质结构包括提供第一电阻状态和第二电阻状态的限制导电区域; 受限导电区域的电阻状态可通过控制信号在第一和第二电阻状态之间切换。

8. 发明授权

US07848213B2 Data storage device 失效
标题翻译：数据存储设备
公开(公告)号：US07848213B2
公开(公告)日：2010-12-07
申请号：US12185530
申请日：2008-08-04
申请人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
发明人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
IPC分类号： G11B9/00
CPC分类号： G11B11/007 , B82Y10/00 , G11B9/1472
摘要： A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.
摘要翻译：一种存储装置，包括用于以地形或磁标记的形式存储数据的存储介质。至少一个探针安装在公共框架上，公共框架和存储介质被设计用于相对于彼此移动以创建或检测所述标记。每个探针包括面向存储介质的尖端，读取感测元件，写入元件和电容平台，其形成第一电极，并被设计用于独立于用于所述读取感测元件的控制信号的施加于其的电压电位，并且为施加到所述电容平台的所述电压电位独立于用于所述写入加热元件的控制信号。它还包括布置在相对于存储介质固定位置的第二电极，形成第一电容器，其中所述第一电极和第一和第二电极之间的介质。

9. 发明申请

US20090298253A1 RESISTOR WITH IMPROVED SWITCHABLE RESISTANCE AND NON-VOLATILE MEMORY DEVICE 有权
标题翻译：具有改进的可切换电阻和非易失性存储器件的电阻器
公开(公告)号：US20090298253A1
公开(公告)日：2009-12-03
申请号：US12538317
申请日：2009-08-10
申请人： Christophe P. Rossel , Michel Despont
发明人： Christophe P. Rossel , Michel Despont
IPC分类号： H01L21/02
CPC分类号： H01L45/04 , H01L27/20 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： A resistor with improved switchable resistance and a non-volatile memory device includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.
摘要翻译：具有改进的可切换电阻的电阻器和非易失性存储器件包括第一电极，面对第一电极的第二电极和第一电极与第二电极之间的电阻结构。电阻结构包括其中在第一和第二电极之间形成有约束的可切换导电区域的绝缘电介质材料。电阻器还包括扰动元件，至少在形成有限可切换的导电区域的形成过程期间，在扰动元件附近的电阻结构上局部地施加机械应力。

10. 发明授权

US07480426B1 Method of forming a three-dimensional stacked optical device 有权
标题翻译：形成三维堆叠光学器件的方法
公开(公告)号：US07480426B1
公开(公告)日：2009-01-20
申请号：US12054754
申请日：2008-03-25
申请人： Laurent Dellmann , Michel Despont , Bert J. Offrein
发明人： Laurent Dellmann , Michel Despont , Bert J. Offrein
IPC分类号： G02B6/12
CPC分类号： H01L25/167 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a three-dimensional stacked optical device includes mounting at least one optical device to a transparent substrate, fabricating a plurality of vias though the at least one optical device, and filling the plurality of vias with a conductive material member that forms a plurality of backside contacts on the at least one optical device. The method further requires mounting an electronic chip to the plurality of backside contacts on the at least one optical device, fabricating a plurality of vias in the electronic chip, filling each of the plurality of vias in the electronic chip with a another conductive material member, and depositing a backside contact at each of the plurality of vias formed in the electronic chip. Each backside contact is electrically connected to corresponding ones of the another conductive material member positioned in respective ones of the plurality of vias formed in the electronic chip.
摘要翻译：一种形成三维层叠光学器件的方法包括：将至少一个光学器件安装到透明衬底上，通过所述至少一个光学器件制造多个通孔，以及用导电材料部件填充多个通孔，所述导电材料部件形成在所述至少一个光学装置上的多个背面触点。该方法还需要将电子芯片安装到至少一个光学器件上的多个背面触点中，在电子芯片中制造多个通孔，用另一个导电材料构件填充电子芯片中的多个通孔中的每一个，以及在形成在电子芯片中的多个通孔中的每一个上沉积背面接触。每个背面接触件电连接到位于形成在电子芯片中的多个通孔中的相应一个通孔中的另一个导电材料构件的相应的一个。

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