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    • 3. 发明授权
    • Stationary induction electric apparatus and manufacturing method thereof
    • 固定式感应电气设备及其制造方法
    • US08860540B2
    • 2014-10-14
    • US13547475
    • 2012-07-12
    • Kei TakanoShin YamadaOsamu HosokawaTakeshi ChigiriKiyokatsu Akimoto
    • Kei TakanoShin YamadaOsamu HosokawaTakeshi ChigiriKiyokatsu Akimoto
    • H01F27/02H01F27/04
    • H01F41/005H01F27/04Y10T29/4902
    • A stationary induction electric apparatus includes a porcelain tube, a connection conductor, a conductor, a casing, a lead, a terminal, a spacer, an electric connection member and a first and a second insulating medium. The connection conductor is disposed at one end of the porcelain tube. The conductor is disposed in the porcelain tube, and connected to the connection conductor. The casing covers a stationary induction electric apparatus main body, and has an opening part. The lead extends from the main body to the opening part. The terminal is disposed at an end part of the lead. The spacer seals the other end of the porcelain tube and the opening part. The member includes an electrode connected to the terminal and a joint part connected to the conductor, and penetrates the spacer. The first and second insulating media are respectively filled in the porcelain tube and the casing.
    • 静电感应电气设备包括瓷管,连接导体,导体,壳体,引线,端子,间隔物,电连接构件和第一和第二绝缘介质。 连接导体设置在瓷管的一端。 导体设置在瓷管中,并连接到连接导体。 壳体覆盖固定感应电器主体,并具有开口部。 导线从主体延伸到开口部分。 端子设置在引线的端部。 间隔件密封瓷管的另一端和开口部分。 构件包括连接到端子的电极和连接到导体的接合部分,并且穿过间隔件。 第一和第二绝缘介质分别装入瓷管和外壳中。
    • 4. 发明授权
    • Semiconductor memory device and method of programming the same
    • 半导体存储器件及其编程方法
    • US6031760A
    • 2000-02-29
    • US124063
    • 1998-07-29
    • Koji SakuiJunichi MiyamotoKenichi ImamiyaKei Takano
    • Koji SakuiJunichi MiyamotoKenichi ImamiyaKei Takano
    • G11C16/10G11C16/34G11C16/00
    • G11C16/3459G11C16/10G11C16/3454
    • A semiconductor memory device includes sense amplifier circuits each having a latch circuit connected to a sense node and storing circuits for storing identification data indicating sense amplifier circuits instructed to perform program when program data is loaded into the sense amplifier circuits. Before program verify read operation, data in the sense amplifier circuits instructed to perform programming by the loaded data is reset to the loaded data on the basis of the identification data in the storing circuits. This suppresses any rise in the potential of the common source line of a plurality of memory cells when a program verify operation is performed or when a page divisional program operation is performed, or suppresses any difference between the common source line potential rises in a program verify read operation and a normal read operation, thereby preventing incomplete programming. This improves the reliability of the program verify read operation and the page divisional program operation.
    • 半导体存储器件包括读出放大器电路,每个读出放大器电路都具有连接到感测节点的锁存电路,并存储电路,用于存储当程序数据被加载到读出放大器电路中时指示执行程序的读出放大器电路的识别数据。 在编程验证读取操作之前,指示通过加载的数据执行编程的读出放大器电路中的数据根据​​存储电路中的识别数据被重置到加载的数据。 这抑制了当执行程序验证操作时或者当执行页面划分程序操作时多个存储器单元的公共源极线的电位的任何上升,或者抑制程序验证中的公共源极线电位上升之间的任何差异 读取操作和正常读取操作,从而防止编程不完整。 这提高了程序验证读取操作和页面分割程序操作的可靠性。