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1. 发明授权

US06466597B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06466597B1
公开(公告)日：2002-10-15
申请号：US09332163
申请日：1999-06-14
申请人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
发明人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
IPC分类号： G01S500
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/34333
摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.
摘要翻译：氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

2. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

3. 发明申请

US20050142682A1 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US20050142682A1
公开(公告)日：2005-06-30
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/00 , H01L21/336
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

4. 发明授权

US07160748B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US07160748B2
公开(公告)日：2007-01-09
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

5. 发明授权

US06586774B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US06586774B2
公开(公告)日：2003-07-01
申请号：US10021006
申请日：2001-12-19
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L2906
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

6. 发明授权

US06667185B2 Method of fabricating nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US06667185B2
公开(公告)日：2003-12-23
申请号：US10355069
申请日：2003-01-31
申请人： Akihiko Ishibashi , Isao Kidoguchi , Kenji Harafuji , Yuzaburo Ban
发明人： Akihiko Ishibashi , Isao Kidoguchi , Kenji Harafuji , Yuzaburo Ban
IPC分类号： H01L2120
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02645 , H01L33/007 , H01S5/32341
摘要： The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.
摘要翻译：制造本发明的氮化物半导体器件的方法包括分别在衬底上生长多个氮化物半导体层的多个步骤; 以及在所述多个步骤中生长一个氮化物半导体层的步骤和与所述一个氮化物半导体层相邻的另一氮化物半导体层的生长步骤之间，将生长环境压力从第一生长环境压力改变为第二生长环境的步骤压力与第一生长环境压力不同。

7. 发明授权

US06867112B1 Method of fabricating nitride semiconductor device 失效
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US06867112B1
公开(公告)日：2005-03-15
申请号：US09692211
申请日：2000-10-20
申请人： Akihiko Ishibashi , Isao Kidoguchi , Kenji Harafuji , Yuzaburo Ban
发明人： Akihiko Ishibashi , Isao Kidoguchi , Kenji Harafuji , Yuzaburo Ban
IPC分类号： H01L21/205 , H01L21/20 , H01L33/00 , H01S5/323 , H01S5/343
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02645 , H01L33/007 , H01S5/32341
摘要： The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.
摘要翻译：制造本发明的氮化物半导体器件的方法包括分别在衬底上生长多个氮化物半导体层的多个步骤; 以及在所述多个步骤中生长一个氮化物半导体层的步骤和与所述一个氮化物半导体层相邻的另一氮化物半导体层的生长步骤之间，将生长环境压力从第一生长环境压力改变为第二生长环境的步骤压力不同于第一生长环境压力。

8. 发明授权

US06544869B1 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device 失效
公开(公告)号：US06544869B1
公开(公告)日：2003-04-08
申请号：US09884133
申请日：2001-06-20
申请人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L2120
CPC分类号： C23C16/45582 , C23C16/52 , C30B25/14 , Y10T117/10
摘要： A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.

9. 发明授权

US5324388A Dry etching method and dry etching apparatus 失效
标题翻译：干蚀刻法和干蚀刻装置
公开(公告)号：US5324388A
公开(公告)日：1994-06-28
申请号：US74613
申请日：1993-06-11
申请人： Atsuhiro Yamano , Masafumi Kubota , Kenji Harafuji
发明人： Atsuhiro Yamano , Masafumi Kubota , Kenji Harafuji
IPC分类号： H01J37/32 , H01L21/306 , B44C1/22
CPC分类号： H01J37/32266 , H01J37/32357 , H01J37/32678
摘要： Magnetic coils are provided around a plasma generation chamber. To the plasma generation chamber is supplied a microwave which is generated by a microwave generator. Electron cyclotron resonance is caused by the interaction between a magnetic field produced by the magnetic coils and the microwave generated by the microwave generator, so as to accelerate electrons in the plasma generation chamber. The electrons thus accelerated generates a plasma. A reaction chamber is provided underneath the plasma generation chamber. The plasma generated in the plasma generation chamber is introduced to the reaction chamber to be used for etching a material on a sample stage. A reflex klystron is used as the microwave generator. By changing the cavity length of the reflex klystron, the resonance frequency of the cavity resonator is varied, thus modulating the frequency of the microwave supplied to the plasma generation chamber by the microwave generator.
摘要翻译：磁性线圈设置在等离子体发生室周围。向等离子体生成室供给由微波发生器产生的微波。电子回旋共振是由磁线圈产生的磁场与由微波发生器产生的微波之间的相互作用引起的，以便加速等离子体产生室中的电子。因此加速的电子产生等离子体。反应室设置在等离子体产生室下面。将等离子体产生室中产生的等离子体引入反应室，以用于蚀刻样品台上的材料。反射速调管用作微波发生器。通过改变反射速调管的空腔长度，空腔谐振器的谐振频率是变化的，从而调制由微波发生器提供给等离子体发生室的微波的频率。

10. 发明授权

US5259922A Drying etching method 失效
标题翻译：干燥蚀刻法
公开(公告)号：US5259922A
公开(公告)日：1993-11-09
申请号：US744583
申请日：1991-08-14
申请人： Atsuhiro Yamano , Tokuhiko Tamaki , Masafumi Kubota , Kenji Harafuji , Noboru Nomura
发明人： Atsuhiro Yamano , Tokuhiko Tamaki , Masafumi Kubota , Kenji Harafuji , Noboru Nomura
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/32137
摘要： A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.
摘要翻译：一种半导体或其他材料的衬底或层的干蚀刻方法，其包括提供具有阳极和阴极的金属室，所述金属室彼此间隔开并将待蚀刻的衬底或层安装在阴极上，以及将来自RF电源的电势施加到阴极，使得在阳极和阴极之间产生等离子体，以在阴极和阳极之间产生体积区域和鞘区域。 RF电源的频率设定在高于13.56MHz的水平，在该水平下，用离子对衬底或层进行蚀刻。可以用Cl基蚀刻气体有效地蚀刻多晶硅，SiN或Al合金层。

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