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1. 发明授权

US06436605B1 Plasma resistant composition and use thereof 失效
标题翻译：等离子体组合物及其用途
公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译：通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。

2. 发明授权

US07074525B2 Critical dimension control of printed features using non-printing fill patterns 失效
标题翻译：使用非印刷填充图案的印刷特征的关键尺寸控制
公开(公告)号：US07074525B2
公开(公告)日：2006-07-11
申请号：US10425817
申请日：2003-04-29
申请人： Chung-Hsi J. Wu , Timothy Allan Brunner , Shahid Butt , Patrick Speno
发明人： Chung-Hsi J. Wu , Timothy Allan Brunner , Shahid Butt , Patrick Speno
IPC分类号： G01F9/00
CPC分类号： G03F1/36
摘要： Non-uniformity and image shortening are substantially reduced in an image printed on a substrate using a photolithographic mask in which the mask pattern includes at least one lines and spaces array adjacent to at least one clear region. At least one line feature is incorporated within the clear region of the mask pattern and is disposed in proximity to the lines and spaces array. The line feature has a line width that is smaller than a minimum resolution of the optical projection system. The image is printed by illuminating the photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using the optical projection system.
摘要翻译：使用其中掩模图案包括与至少一个透明区域相邻的至少一个行和间隔阵列的光刻掩模，印刷在基板上的图像中的非均匀性和图像缩短显着降低。至少一个线特征被并入在掩模图案的清晰区域内并且设置在线和间隔阵列附近。线特征具有小于光学投影系统的最小分辨率的线宽。通过照射光刻掩模并使用光学投影系统将透射通过光刻掩模的光投影到基板上来打印图像。

3. 发明授权

US6114096A Asymmetrical resist sidewall 失效
标题翻译：不对称抗蚀剂侧壁
公开(公告)号：US6114096A
公开(公告)日：2000-09-05
申请号：US175856
申请日：1998-10-20
申请人： Rebecca Dora Mih , Donald Coughlin Wheeler , Timothy Allan Brunner
发明人： Rebecca Dora Mih , Donald Coughlin Wheeler , Timothy Allan Brunner
IPC分类号： G03F1/26 , G03F1/30 , G03F7/00 , G03F7/20 , H01L21/027
CPC分类号： G03F1/30 , G03F1/26 , G03F7/00 , G03F7/2002
摘要： A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.
摘要翻译：提供了一种光掩模和使用该光掩模制作不对称抗蚀剂图案的方法。在其上具有抗蚀剂涂层的晶片在特殊控制的散焦条件下使用本发明的掩模曝光以提供不对称抗蚀剂图案轮廓。在掩模上的遮光图案形成材料的一侧或两侧上包括移相器的掩模提供通过遮光材料的每个侧面上具有不同相位的掩模的光，其产生不对称抗蚀剂图案轮廓。

4. 发明授权

US5805290A Method of optical metrology of unresolved pattern arrays 失效
标题翻译：未解决的图案阵列的光学计量方法
公开(公告)号：US5805290A
公开(公告)日：1998-09-08
申请号：US643138
申请日：1996-05-02
申请人： Christopher Perry Ausschnitt , Timothy Allan Brunner
发明人： Christopher Perry Ausschnitt , Timothy Allan Brunner
IPC分类号： G01B11/02 , B81C99/00 , G03F7/20 , H01L21/027 , G01B11/00
CPC分类号： G03F7/70625 , G03F7/70633
摘要： A process for determining critical dimension bias or overlay error in a substrate formed by a lithographic process initially provides an array of elements on a substrate, the array comprising a plurality of spaced, substantially parallel elements having a length and a width. The sum of the width of an element and the spacing of adjacent elements define a pitch of the elements. Edges of the elements are aligned along a line forming opposite array edges, with the distance between array edges comprising the array width. An optical metrology tool used for measurement of the array is adjustable for one or more of i) wavelength of the light source, ii) numerical aperture value or iii) partial coherence. The process includes selecting the pitch of the elements, the wavelength of the light source, the numerical aperture and the partial coherence such that the pitch of the elements is less than or about equal to the ratio of the wavelength of the light source to the numerical aperture value of the optical metrology tool in the direction of the array edges whereby individual elements are not resolved within the array. The edges of the array are resolved with the optical metrology tool and the width of the array is measured to determine bias or overlay error in the substrate. Where the pitch of the array differs in different directions, the optical metrology tool has a non-circular pupil and the numerical aperture value NA of the optical metrology tool in the direction of minimum array pitch is selected to be less than the numerical aperture value NA of the optical metrology tool in a direction of maximum array pitch, such that the array edges are resolved and individual elements are not resolved.
摘要翻译：用于确定由光刻工艺形成的衬底中的临界尺寸偏差或重叠误差的过程最初提供了衬底上的元件阵列，所述阵列包括具有长度和宽度的多个间隔开的基本上平行的元件。元素的宽度和相邻元素的间距的总和定义了元素的间距。元件的边缘沿着形成相对的阵列边缘的线对齐，阵列边缘之间的距离包括阵列宽度。用于测量阵列的光学测量工具可以调整光源的i）波长中的一个或多个，ii）数值孔径值或iii）部分相干性。该过程包括选择元件的间距，光源的波长，数值孔径和部分相干性，使得元件的间距小于或等于光源的波长与数值的比率在光学计量工具的阵列边缘的方向上的光圈值，其中各个元件在阵列内不被解析。阵列的边缘用光学测量工具解析，测量阵列的宽度以确定衬底中的偏置或重叠误差。在阵列的间距在不同方向上不同的情况下，光学计量工具具有非圆形光瞳，光学测量工具在最小阵列间距方向上的数值孔径NA选择为小于数值孔径值NA 的光学计量学工具在最大阵列间距的方向上，使得阵列边缘被解析并且各个元件不被解析。

5. 发明授权

US08227180B2 Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权
标题翻译：通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进
公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/00 , G03F7/028 , G03F7/11 , G03F7/20 , G03F7/40
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

6. 发明授权

US5948571A Asymmetrical resist sidewall 失效
公开(公告)号：US5948571A
公开(公告)日：1999-09-07
申请号：US820399
申请日：1997-03-12
申请人： Rebecca Dora Mih , Donald Coughlin Wheeler , Timothy Allan Brunner
发明人： Rebecca Dora Mih , Donald Coughlin Wheeler , Timothy Allan Brunner
IPC分类号： G03F1/26 , G03F1/30 , G03F7/00 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/26 , G03F7/00 , G03F7/2002
摘要： A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.

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