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    • 7. 发明授权
    • Scheduling method and scheduling apparatus
    • 调度方法和调度设备
    • US08375390B2
    • 2013-02-12
    • US11996361
    • 2006-05-31
    • Keisuke InoueSeiji Murata
    • Keisuke InoueSeiji Murata
    • G06F9/46
    • G06F9/526G06F9/461G06F9/4843G06F9/4881
    • Thread information is retained in a main memory. The thread information includes a bit string and last executed information. Each bit of the bit string is allocated to a thread, and the number and the value of the bit indicate the number of the thread and whether or not the thread is in an executable state, respectively. The last executed information is the number of a last executed thread. A processor rotates the bit string so that a bit indicating the last executed thread comes to the end of the bit string. It searches the rotated bit string for a bit corresponding to a thread in the executable state in succession from the top, and selects the number of the first obtained bit as the number of the next thread to be executed. Then, the thread information is updated by changing the value of the bit of this number to indicate not being executable, and setting the last executed information to the number of this bit. This operation is performed by using an atomic command.
    • 线程信息保留在主存储器中。 线程信息包括位串和最后执行的信息。 位串的每一位分配给一个线程,该位的数字和值分别表示线程的数量以及线程是否处于可执行状态。 最后执行的信息是最后执行的线程的编号。 处理器旋转位串,使得指示最后执行的线程的位到达位串的末尾。 从顶部连续地搜索与可执行状态的线程相对应的位的旋转位串,并选择第一获得位数作为要执行的下一个线程的号码。 然后,通过改变该数字的位的值来更新线程信息,以指示不可执行,并且将最后执行的信息设置为该位的编号。 该操作通过使用原子命令来执行。
    • 9. 发明授权
    • Method for manufacturing photoelectric converting device
    • 光电转换装置的制造方法
    • US07867807B2
    • 2011-01-11
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/00
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。