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    • 4. 发明申请
    • DRIVING OF A MEMORY MATRIX OF RESISTANCE HYSTERESIS ELEMENTS
    • 驱动电阻滞后元件的记忆矩阵
    • WO2006095278A1
    • 2006-09-14
    • PCT/IB2006/050617
    • 2006-02-28
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.IKKINK, Teunis, J.WOERLEE, Pierre, H.VAN ACHT, Victor, M., G.LAMBERT, NicolaasMARSMAN, Albert, W.
    • IKKINK, Teunis, J.WOERLEE, Pierre, H.VAN ACHT, Victor, M., G.LAMBERT, NicolaasMARSMAN, Albert, W.
    • G11C16/02
    • G11C13/0004G11C11/5678G11C13/0028G11C2213/15G11C2213/72
    • A memory matrix (10) comprises rows and columns of cells, each cell comprising a resistance hysteresis element (24) and a threshold element (22) coupled in series between a row terminal and a column terminal of the cell (20). The resistance hysteresis element (24) has a mutually larger and smaller hysteresis thresholds of mutually opposite polarity respectively. Voltage differences are applied between the column terminals and the row terminals of cells (20) in a selected row, so as to perform read actions. These voltage differences have a read polarity so that the voltage across the cell (20) is in a direction corresponding to the larger hysteresis threshold. Voltage differences are applied between the column terminals and the row terminals of cells (20) in a selected row, so as to perform erase actions, all cells (20) of a selected row being erased collectively in the erase action. The voltage differences for erase actions have the read polarity. Furthermore voltage differences are applied between the column terminals and the row terminals of cells (20) in a selected row, so as to perform write actions. The voltage differences for the write actions have a write polarity corresponding to the smaller hysteresis threshold, for updating cells (20) that are selected dependent on write data.
    • 存储器矩阵(10)包括单元的行和列,每个单元包括串联耦合在单元(20)的行端子和列端子之间的电阻滞后元件(24)和阈值元件(22)。 电阻滞后元件(24)分别具有相互相反极性的相互较大和较小的滞后阈值。 电压差在列选择行中的单元(20)的列端子和行端子之间施加,以便执行读取动作。 这些电压差具有读取极性,使得电池(20)两端的电压处于对应于较大滞后阈值的方向。 电压差在列选择行中的单元(20)的列端子和行端子之间施加,以便执行擦除动作,所选行的所有单元(20)在擦除动作中被共同擦除。 擦除动作的电压差具有读取极性。 此外,在列端子和选定行中的单元(20)的行端子之间施加电压差,以便执行写入动作。 写入动作的电压差具有对应于较小滞后阈值的写入极性,用于更新根据写入数据选择的单元(20)。