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    • 5. 发明授权
    • Plasma etching method
    • 等离子蚀刻法
    • US06914005B2
    • 2005-07-05
    • US10085002
    • 2002-03-01
    • Muneo FuruseMitsuru SuehiroHiroshi KanekiyoKunihiko KoroyasuTomoyuki Tamura
    • Muneo FuruseMitsuru SuehiroHiroshi KanekiyoKunihiko KoroyasuTomoyuki Tamura
    • H01J37/32H01L21/302H01L21/461
    • H01J37/32449H01J37/32082
    • A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
    • 一种等离子体蚀刻方法和装置,其中处理气体从布置在与用于产生等离子体或样品的电极相对的电极上的淋浴板供给到样品中心,并且将气体转化为等离子体,从而蚀刻样品 。 在样品台和电极之间施加RF功率以将能量施加到等离子体中的带电粒子上,从而蚀刻样品。 在该过程中,除了带电粒子对样品的入射之外,带电粒子通过施​​加RF功率也进入电极的喷淋板。 进入喷淋板的处理气体供给孔的带电粒子被中和,以防止喷淋板上的异常放电,从而抑制异物的产生。