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1. 发明授权

US06665065B1 Defect detection in pellicized reticles via exposure at short wavelengths 有权
标题翻译：通过在短波长下的曝光在斑点状掩模版中的缺陷检测
公开(公告)号：US06665065B1
公开(公告)日：2003-12-16
申请号：US09829195
申请日：2001-04-09
申请人： Khoi A. Phan , Bhanwar Singh , Wolfram Porsche
发明人： Khoi A. Phan , Bhanwar Singh , Wolfram Porsche
IPC分类号： G01N2100
CPC分类号： G01N21/95692
摘要： A system and method are provided for detecting latent defects in a mask or reticle, which defects may vary as a function of radiation at exposure wavelengths. By way of example, the mask or reticle is inspected, exposed to radiation at a specified wavelength, and then reinspected. A correlation between the inspection results before and after exposure provides an indication of exposure-related defects, which may include defect growth and/or formation of defects caused by the exposure. By way of further illustration, the combination of inspection and exposure of a mask or reticle may be implemented with respect to a pellicized mask or reticle so as to detect additional defects related to use of the pellicle with the mask or reticle.
摘要翻译：提供了用于检测掩模或掩模版中的潜在缺陷的系统和方法，该缺陷可以随曝光波长的辐射而变化。作为示例，检查掩模或掩模版，暴露于指定波长的辐射，然后再检查。暴露前后的检查结果之间的相关性提供暴露相关缺陷的指示，其可以包括由暴露引起的缺陷生长和/或形成缺陷。为了进一步说明，掩模或掩模版的检查和曝光的组合可以相对于薄膜掩模或掩模版实现，以便检测与使用掩模或掩模版的防护薄膜相关的附加缺陷。

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