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1. 发明申请

US20050183820A1 Thermal treatment equipment 审中-公开
标题翻译：热处理设备
公开(公告)号：US20050183820A1
公开(公告)日：2005-08-25
申请号：US10876939
申请日：2004-06-24
申请人： Kenji Fukuda , Junji Senzaki , Shinichi Nishizawa , Tomoyoshi Endo , Teruyuki Yashima
发明人： Kenji Fukuda , Junji Senzaki , Shinichi Nishizawa , Tomoyoshi Endo , Teruyuki Yashima
IPC分类号： H01L21/31 , C04B35/565 , C04B35/64 , F27B5/04 , F27B17/00 , H01L21/00 , H01L21/26 , C23F1/00
CPC分类号： C04B35/565 , C04B35/64 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： Thermal treatment equipment for rapidly heating a SiC substrate having a diameter of several inches or larger to a temperature as high as 1200° C. or higher with a high in-plane evenness by heating a peripheral zone of a substrate using high frequency induction and by heating a central zone of the substrate using infrared lamps while the substrate and a stage thereof are covered with a shield plate.
摘要翻译：热处理设备，通过使用高频感应加热衬底的周边区域，以及通过使用高频感应加热基板的周边区域，将具有几英寸或更大直径的SiC衬底快速加热到高达1200℃或更高的温度，具有高的面内均匀性使用红外灯加热基板的中心区域，同时基板及其台阶用屏蔽板覆盖。

2. 发明授权

US07265388B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07265388B2
公开(公告)日：2007-09-04
申请号：US10928269
申请日：2004-08-30
申请人： Kenji Fukuda , Ryouji Kosugi , Shinsuke Harada , Junji Senzaki , Kazutoshi Kojima , Satoshi Kuroda
发明人： Kenji Fukuda , Ryouji Kosugi , Shinsuke Harada , Junji Senzaki , Kazutoshi Kojima , Satoshi Kuroda
IPC分类号： H01L29/15
CPC分类号： H01L29/1608 , H01L29/045 , H01L29/6606 , H01L29/66068 , H01L29/7801 , H01L29/7827 , H01L29/7835 , H01L29/812 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.
摘要翻译：形成在碳化硅半导体衬底上的半导体器件包括形成在从碳化硅半导体衬底的（000-1）面倾斜（或倾斜）0至小于1度的表面上的外延层，其中至少一个通过离子注入在外延层中选择性地形成P型半导体区域或N型半导体区域，形成与P型半导体区域或N型半导体区域的表面层接触的金属电极，整流功能示出在金属电极和P型半导体区域或N型半导体区域之间，并且半导体器件形成在肖特基势垒二极管或PN型二极管的碳化硅半导体衬底上。

3. 发明授权

US07880173B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07880173B2
公开(公告)日：2011-02-01
申请号：US12025445
申请日：2008-02-04
申请人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
发明人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
IPC分类号： H01L29/15
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/8213 , H01L21/823807 , H01L21/823857 , H01L21/823885 , H01L27/092 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7835
摘要： A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high blocking voltage and high channel mobility is manufactured by optimizing the heat-treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.
摘要翻译：提供半导体器件和使用（000-1）面的碳化硅衬底的器件的制造方法。通过优化栅极氧化后使用的热处理方法来制造具有高阻断电压和高沟道迁移率的SiC半导体器件。制造半导体器件的方法包括以下步骤：在由具有（000-1）面取向的碳化硅形成的半导体区上形成栅极绝缘层，在栅极绝缘层上形成栅电极，在半导体上形成电极区域，清洁半导体区域表面。栅极绝缘层在800℃至1150℃的温度下在含有1％或更多的H 2 O（水）蒸汽的气氛中形成，以降低栅绝缘层和半导体之间的界面的界面陷阱密度地区。

4. 发明申请

US20060151806A1 Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same 失效
公开(公告)号：US20060151806A1
公开(公告)日：2006-07-13
申请号：US10536192
申请日：2003-11-25
申请人： Kenji Fukuda , Ryoji Kosugi , Junji Senzaki , Shinsuke Harada
发明人： Kenji Fukuda , Ryoji Kosugi , Junji Senzaki , Shinsuke Harada
IPC分类号： H01L29/74
CPC分类号： H01L29/7828 , H01L21/0445 , H01L29/1608 , H01L29/41766 , H01L29/7802 , H01L29/7838 , H01L29/861 , H01L29/872
摘要： In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.

5. 发明申请

US20050245034A1 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050245034A1
公开(公告)日：2005-11-03
申请号：US10517772
申请日：2003-06-26
申请人： Kenji Fukuda , Junji Senzaki
发明人： Kenji Fukuda , Junji Senzaki
IPC分类号： H01L21/04 , H01L27/092 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/049 , H01L27/092 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7835
摘要： A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high voltage resistancehigh blocking voltage and high channel mobility is manufactured by opting the heat treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.
摘要翻译：提供半导体器件和使用（000-1）面的碳化硅衬底的器件的制造方法。通过选择栅极氧化后使用的热处理方法，制造具有高电阻高阻挡电压和高沟道迁移率的SiC半导体器件。制造半导体器件的方法包括以下步骤：在由具有（000-1）面取向的碳化硅形成的半导体区上形成栅极绝缘层，在栅极绝缘层上形成栅电极，在半导体上形成电极区域，清洁半导体区域表面。在800℃〜1150℃的温度下，在含有1％以上的H 2 O（水）蒸气的气氛中形成栅极绝缘层，以降低其界面陷阱密度栅极绝缘层和半导体区域之间的界面。

6. 发明申请

US20090057686A1 SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER, DRIVE INVERTER, GENERAL-PURPOSE INVERTER AND SUPER-POWER HIGH-FREQUENCY COMMUNICATION EQUIPMENT USING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和电力转换器，驱动变频器，一般用途逆变器和使用半导体器件的超级高频通信设备
公开(公告)号：US20090057686A1
公开(公告)日：2009-03-05
申请号：US12261930
申请日：2008-10-30
申请人： Kenji FUKUDA , Ryoji Kosugi , Junji Senzaki , Shinsuke Harada
发明人： Kenji FUKUDA , Ryoji Kosugi , Junji Senzaki , Shinsuke Harada
IPC分类号： H01L29/24
CPC分类号： H01L29/7828 , H01L21/0445 , H01L29/1608 , H01L29/41766 , H01L29/7802 , H01L29/7838 , H01L29/861 , H01L29/872
摘要： In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.
摘要翻译：在使用具有p型的碳化硅半导体衬底的半导体器件中，通过离子注入形成n型杂质半导体区域，可以通过降低碳化硅半导体衬底表面的粗糙度来改善端部半导体器件的电特性。本发明的半导体器件是肖特基势垒二极管或pn型二极管，其包括选择性地形成在具有最外表面层表面的碳化硅半导体区域中的至少一个p型半导体区域和n型半导体区域， 1）表面或与（000-1）表面成角度倾斜的表面，以及形成在最外表面层表面上的金属电极，其控制电流在垂直于最外表面层表面的方向上流动的方向从电压施加到金属电极。

7. 发明申请

US20080203400A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080203400A1
公开(公告)日：2008-08-28
申请号：US12025445
申请日：2008-02-04
申请人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
发明人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
IPC分类号： H01L29/161
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/8213 , H01L21/823807 , H01L21/823857 , H01L21/823885 , H01L27/092 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7835
摘要： A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high blocking voltage and high channel mobility is manufactured by optimizing the heat-treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.
摘要翻译：提供半导体器件和使用（000-1）面的碳化硅衬底的器件的制造方法。通过优化栅极氧化后使用的热处理方法来制造具有高阻断电压和高沟道迁移率的SiC半导体器件。制造半导体器件的方法包括以下步骤：在由具有（000-1）面取向的碳化硅形成的半导体区上形成栅极绝缘层，在栅极绝缘层上形成栅电极，在半导体上形成电极区域，清洁半导体区域表面。在800℃至1150℃的温度下，在含有1％或更多的H 2 O（水）蒸气的气氛中形成栅极绝缘层，以降低界面陷阱密度栅极绝缘层和半导体区域之间的界面。

8. 发明申请

US20050077591A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050077591A1
公开(公告)日：2005-04-14
申请号：US10928269
申请日：2004-08-30
申请人： Kenji Fukuda , Ryouji Kosugi , Shinsuke Harada , Junji Senzaki , Kazutoshi Kojima , Satoshi Kuroda
发明人： Kenji Fukuda , Ryouji Kosugi , Shinsuke Harada , Junji Senzaki , Kazutoshi Kojima , Satoshi Kuroda
IPC分类号： H01L21/28 , H01L21/04 , H01L21/329 , H01L29/04 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/78 , H01L29/80 , H01L29/812 , H01L29/861 , H01L29/872 , H01L29/15
CPC分类号： H01L29/1608 , H01L29/045 , H01L29/6606 , H01L29/66068 , H01L29/7801 , H01L29/7827 , H01L29/7835 , H01L29/812 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.
摘要翻译：形成在碳化硅半导体衬底上的半导体器件包括形成在从碳化硅半导体衬底的（000-1）面倾斜（或倾斜）0至小于1度的表面上的外延层，其中至少一个通过离子注入在外延层中选择性地形成P型半导体区域或N型半导体区域，形成与P型半导体区域或N型半导体区域的表面层接触的金属电极，整流功能示出在金属电极和P型半导体区域或N型半导体区域之间，并且半导体器件形成在肖特基势垒二极管或PN型二极管的碳化硅半导体衬底上。

9. 发明授权

US06764963B2 Manufacturing method of semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06764963B2
公开(公告)日：2004-07-20
申请号：US10101318
申请日：2002-03-20
申请人： Kenji Fukuda , Junji Senzaki , Ryoji Kosugi , Kazuo Arai , Seiji Suzuki
发明人： Kenji Fukuda , Junji Senzaki , Ryoji Kosugi , Kazuo Arai , Seiji Suzuki
IPC分类号： H01L2131
CPC分类号： H01L21/049 , H01L29/045 , H01L29/1608 , Y10S438/931
摘要： A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor. After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap density at the interface between the gate oxidation layer and the semiconductor region.
摘要翻译：使用SiC衬底制造半导体器件。在半导体区域形成由具有（11-20）面取向的SiC形成的区域。栅极绝缘层是栅极氧化层。清洁半导体区域的表面，并且在包含氢或水蒸汽的气氛中形成栅极绝缘层。在形成栅极绝缘层之后，在含有氢或水蒸汽的气氛中对衬底进行热处理。这降低了栅极氧化层和半导体区域之间的界面处的界面陷阱密度。

10. 发明授权

US06759684B2 SiC semiconductor device 有权
标题翻译： SiC半导体器件
公开(公告)号：US06759684B2
公开(公告)日：2004-07-06
申请号：US09987271
申请日：2001-11-14
申请人： Kenji Fukuda , Kazuo Arai , Junji Senzaki , Shinsuke Harada , Ryoji Kosugi , Kazuhiro Adachi
发明人： Kenji Fukuda , Kazuo Arai , Junji Senzaki , Shinsuke Harada , Ryoji Kosugi , Kazuhiro Adachi
IPC分类号： H01L310312
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/1608 , H01L29/4916 , H01L29/66068 , H01L29/7828 , H01L29/7835 , H01L29/7838
摘要： An MIS transistor that uses a silicon carbide substrate has a buried channel structure. The surface orientation of the silicon carbide substrate is optimized so that the device does not assume a normally on state, has good hot-carrier endurance and punch-through endurance, and high channel mobility. In particular, a P-type silicon carbide semiconductor substrate is used to form a buried channel region. To achieve high mobility, the depth at which the buried channel region is formed is optimized, and the ratio between buried channel region junction depth (Lbc) source and drain region junction depth (Xj) is made to be within 0.2 to 1.0. The device can be formed on any surface of a hexagonal or rhombohedral or a (110) surface of a cubic system silicon carbide crystal, and provides a particularly good effect when formed on the (11-20) surface.
摘要翻译：使用碳化硅衬底的MIS晶体管具有掩埋沟道结构。优化碳化硅衬底的表面取向，使得器件不会呈现正常导通状态，具有良好的热载流子耐久性和穿透耐久性以及高通道迁移率。特别地，使用P型碳化硅半导体衬底来形成掩埋沟道区域。为了实现高迁移率，优化了形成掩埋沟道区域的深度，并且使掩埋沟道区域结深度（Lbc）源极和漏极区域结深度（Xj）之间的比率在0.2至1.0之间。该器件可以形成在立方体系碳化硅晶体的六边形或菱面体或（110）表面的任何表面上，并且当形成在（11-20）表面上时，具有特别好的效果。

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