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1. 发明申请

US20110080929A1 SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110080929A1
公开(公告)日：2011-04-07
申请号：US12519465
申请日：2009-01-08
申请人： Kazutoshi Onozawa , Satoshi Tamura
发明人： Kazutoshi Onozawa , Satoshi Tamura
IPC分类号： H01S5/323 , H01S5/22 , H01L21/30
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/0202 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/3216 , H01S5/34333 , H01S2301/02
摘要： A semiconductor laser device includes a substrate 11 having a (1-100) oriented principal surface, a semiconductor multilayer structure 12 formed on the substrate 11 and having a stripe-shaped optical waveguide, and a plurality of pyramidal protrusions 13 formed at least on a part of a light emitting facet of the substrate 11. The light emitting facet has a (000-1) plane orientation.
摘要翻译：半导体激光器件包括具有（1-100）取向主表面的基板11，形成在基板11上并具有条形光波导的半导体多层结构12，以及至少形成在其上的多个锥体状突起13 基板11的发光小面的一部分。发光小面具有（000-1）面取向。

2. 发明申请

US20110268144A1 NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：氮化物半导体激光器件
公开(公告)号：US20110268144A1
公开(公告)日：2011-11-03
申请号：US12681981
申请日：2009-10-21
申请人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
发明人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
IPC分类号： H01S5/323 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0658 , H01S5/2009 , H01S5/2081 , H01S5/2206 , H01S5/3063
摘要： A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044
摘要翻译：氮化物半导体激光器件包括由形成在衬底上的氮化物半导体制成的有源层106和形成在有源层106上方的电流限制层109.电流限制层具有开口109a，电流选择性地流入有源层该装置满足0.044 <＆Dgr; n /＆Ggr; v <0.062其中＆Dgr; n是开口109a和电流限制层109之间的有效折射率差，＆Ggr; v是作为垂直光限制因子的比例限定在有源层106中的激光照射到在有源层106中发射的激光。

3. 发明授权

US07860352B2 Light-collecting apparatus and contact-type solid-state imaging apparatus using the same 失效
标题翻译：集光装置和使用其的接触型固体摄像装置
公开(公告)号：US07860352B2
公开(公告)日：2010-12-28
申请号：US11423803
申请日：2006-06-13
申请人： Kimiaki Toshikiyo , Motohiro Kojima , Kazutoshi Onozawa
发明人： Kimiaki Toshikiyo , Motohiro Kojima , Kazutoshi Onozawa
IPC分类号： G02F1/01 , H01J3/14 , G01J1/04 , G01N21/00
CPC分类号： H04N1/0311 , G02B3/0087 , G02B5/1876 , G02B5/1885 , H04N1/0282 , H04N1/0312
摘要： The present invention provides a contact-type solid-state imaging apparatus which realizes high resolution and high sensitivity, and also implements downsizing and lowering the cost of the contact-type solid-state imaging apparatus. Each pixel includes a protection glass plate, a light-collecting device, a light-receiving device, a semiconductor integrated circuit, a light emitting diode (LED) and a mounting package. The light-collecting apparatus has two kinds of distributed index lens (o lens and convex lens), and Sin (N=2) film, which is a two-stage concentric structure, is embedded in SiO2 (N=1.45) film.
摘要翻译：本发明提供了实现高分辨率和高灵敏度的接触型固态成像装置，并且还实现了小型化并降低了接触式固态成像装置的成本。每个像素包括保护玻璃板，集光装置，光接收装置，半导体集成电路，发光二极管（LED）和安装封装。集光装置具有两种分布式折射率透镜（o透镜和凸透镜），并且作为两级同心结构的Sin（N = 2）膜嵌入SiO 2（N = 1.45）膜中。

4. 发明授权

US07728901B2 Solid-state imaging device using light-transmitting film as a micro lens 有权
标题翻译：使用透光膜作为微透镜的固态成像装置
公开(公告)号：US07728901B2
公开(公告)日：2010-06-01
申请号：US11621331
申请日：2007-01-09
申请人： Kazutoshi Onozawa , Motohiro Kojima
发明人： Kazutoshi Onozawa , Motohiro Kojima
IPC分类号： H04N5/225 , H04N5/232
CPC分类号： G02B5/32
摘要： The present invention provides a solid-state imaging device which compensates a field curvature which occurs due to an aberration of the optical imaging system and surely receive light incident with a wide angle. Each pixel (pixel size of 2.2 μm square) in a solid-state imaging device includes a light-transmitting film with the first effective refractive index distribution and a light-transmitting film with the second effective refractive index distribution, a light-receiving element, a wiring, a wavelength selection filter, and a Si substrate. A pixel (1) is a pixel placed an approximate center of the solid-state imaging device. A pixel (n) is a pixel placed in the periphery of the solid-state imaging device, and a pixel (n-x) is a pixel that are placed between the pixel (1) and the pixel (n). The light-transmitting film of each pixel has approximately same effective refractive index distribution. Θ0 which is a main light angle on the light-receiving element side, is approximately same. A main light angle in the optical imaging system is represented as Θ1, Θn-x, and Θn. The light-transmitting film varies for each pixel so that a condition Θ0/Θ1>Θ0/Θn-x
摘要翻译：本发明提供一种固态成像装置，其补偿由于光学成像系统的像差而发生的场曲率，并且可靠地接收以广角入射的光。固态成像装置中的每个像素（像素尺寸为2.2μm正方形）包括具有第一有效折射率分布的透光膜和具有第二有效折射率分布的透光膜，受光元件，布线，波长选择滤波器和Si衬底。像素（1）是固体摄像装置的近似中心的像素。像素（n）是位于固态成像装置的周围的像素，像素（n-x）是位于像素（1）和像素（n）之间的像素。每个像素的透光膜具有大致相同的有效折射率分布。作为光接收元件侧的主光角的θ0大致相同。光学成像系统中的主光角度表示为Θ1，Θn-x和Θn。透光膜对于每个像素而变化，使得条件Θ0/Θ1>Θ0/Θn-x <Θ0/Θn。

5. 发明授权

US07692129B2 Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereof 有权
标题翻译：具有亚波长周期结构的光收集装置的固态成像装置，固态成像装置及其制造方法
公开(公告)号：US07692129B2
公开(公告)日：2010-04-06
申请号：US11423776
申请日：2006-06-13
申请人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
发明人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens (1), a color filter (for example, for green) (2), an Al interconnections (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving device (Si photodiodes) (6), and an Si substrate (7). The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens (1)is air (n=1).
摘要翻译：本发明提供能够支持入射角较宽的光学系统的固体摄像装置等。每个像素的尺寸为2.25μm正方形，并且包括分布式折射率透镜（1），滤色器（例如，绿色）（2），Al互连（3），信号发送单元（4），平面化层（5），光接收装置（Si光电二极管）（6）和Si衬底（7）。分布式折射率透镜的两级同心圆结构由SiO 2（n = 2）形成，膜厚为1.2μm（“灰色”），膜厚为0.8μm（“点图案”），膜厚为 0μm（“无图案：白色”），分布式折射率透镜（1）周围的介质为空气（n = 1）。

6. 发明授权

US07586530B2 Solid-state imaging device including pixels arranged in a two-dimensional array 有权
标题翻译：固态成像装置，包括以二维阵列排列的像素
公开(公告)号：US07586530B2
公开(公告)日：2009-09-08
申请号：US11234258
申请日：2005-09-26
申请人： Kazutoshi Onozawa , Daisuke Ueda , Shinji Yoshida
发明人： Kazutoshi Onozawa , Daisuke Ueda , Shinji Yoshida
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/2254 , H04N5/2253
摘要： The present invention provides a solid-state imaging device including an optical element that efficiently condenses even wide-angle incident light and has a color separation function. The solid-state imaging device includes pixels, and in the device each pixel includes: a light receiving element; and an optical element, whose surface, at least, is made of metal, the optical element has: an aperture; and convex parts which are arranged cyclically, and a distance between adjacent convex parts and a width of each convex part range from 0 to 1 wavelength of the light to be condensed.
摘要翻译：本发明提供了一种固态成像装置，其包括有效地冷凝甚至广角入射光并具有分色功能的光学元件。固态成像装置包括像素，并且在该装置中，每个像素包括：光接收元件; 以及光学元件，其表面至少由金属制成，所述光学元件具有：孔; 周向布置的凸部和相邻的凸部之间的距离和每个凸部的宽度的范围为待冷凝的光的0〜1波长。

7. 发明授权

US07579593B2 Night-vision imaging apparatus, control method of the same, and headlight module 有权
标题翻译：夜视成像装置，其控制方法和头灯模块
公开(公告)号：US07579593B2
公开(公告)日：2009-08-25
申请号：US11774088
申请日：2007-07-06
申请人： Kazutoshi Onozawa , Daisuke Ueda
发明人： Kazutoshi Onozawa , Daisuke Ueda
IPC分类号： H01L31/12
CPC分类号： B60Q1/0023 , G01S7/4811 , G01S7/4918 , G01S7/493 , G01S7/499 , G01S17/89 , G01S17/936 , H01L27/14643 , H01L27/148
摘要： The invention provides a night-vision imaging apparatus including: a light emission unit that emits infrared light; a solid-state imaging device that converts the infrared light into a first signal; a light-emission control unit that allows the light emission unit to emit the infrared light which is modulated according to a temporally pseudo-random first modulation; and an extraction unit that extracts, according to the first modulation, a signal corresponding to the infrared light emitted by the light emission unit from the first signal.
摘要翻译：本发明提供了一种夜视成像装置，包括：发射红外光的发光单元; 将所述红外光转换为第一信号的固态成像装置; 发光控制单元，其允许发光单元发射根据时间上伪随机的第一调制被调制的红外光; 以及提取单元，根据第一调制，从第一信号中提取与由发光单元发射的红外光相对应的信号。

8. 发明申请

US20080272454A1 Light-Collecting Device, Solid-State Imaging Apparatus and Method of Manufacturing Thereof 有权
标题翻译：光收集装置，固态成像装置及其制造方法
公开(公告)号：US20080272454A1
公开(公告)日：2008-11-06
申请号：US11658666
申请日：2005-09-01
申请人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
发明人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
IPC分类号： H01L21/64 , G02F1/01 , H01L27/14
CPC分类号： G02B5/1876 , G02B5/1885 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/02327
摘要： It is realized a high sensitive solid-state imaging apparatus which corresponds to an optical system having a short focal length (an optical system having a large incident angle θ).Each pixel (2.8 mm square in size) includes a distributed refractive index lens (1), a color filter (2) for green, Al wirings (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving element (Si photodiode) (6), and an Si substrate (7). The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 μm.
摘要翻译：实现了对应于具有短焦距的光学系统（具有大的入射角θ的光学系统）的高灵敏度固态成像装置。每个像素（尺寸为2.8mm正方形）包括分布折射率透镜（1），用于绿色的滤色器（2），Al布线（3），信号传输单元（4），平坦化层（5），光接收元件（Si光电二极管）（6）和Si衬底（7）。分布式折射率透镜的同心圆结构由具有不同折射率的四种材料制成，例如TiO 2（n = 2.53），SiN（n = 2.53），SiO 2 /SUB>(n=2.53）和空中（n = 1.0）。在同心结构中，相邻圆形透光膜的外周的径向差为100nm。此外，膜厚度为0.4μm。

9. 发明申请

US20060245459A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20060245459A1
公开(公告)日：2006-11-02
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

10. 发明授权

US06919641B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06919641B2
公开(公告)日：2005-07-19
申请号：US10462744
申请日：2003-06-17
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/022 , H01L25/075 , H01S5/02 , H01S5/40 , H01L23/52
CPC分类号： H01L24/95 , H01L25/0753 , H01L2224/95085 , H01L2224/95146 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/15165 , H01S5/02252 , H01S5/4031 , H01L2924/15153 , H01L2924/00
摘要： A semiconductor device includes: a substrate having in its principal surface first and second recessed portions formed adjacent to each other; and first and second semiconductor laser chips each having a portion that is inserted in one of the recessed portions. The depth of the recessed portions is smaller than the height of the first and second semiconductor laser chips that are disposed in the recessed portions.
摘要翻译：半导体器件包括：基板，其主表面具有彼此相邻形成的第一和第二凹部; 以及第一和第二半导体激光器芯片，每个半导体激光器芯片具有插入到一个凹部中的一部分。凹部的深度小于设置在凹部中的第一和第二半导体激光器芯片的高度。

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