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1. 发明申请

US20100073099A1 STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK 有权
标题翻译：稳定网络和具有稳定网络的半导体器件
公开(公告)号：US20100073099A1
公开(公告)日：2010-03-25
申请号：US12417089
申请日：2009-04-02
申请人： Choon Yong NG , Kazutaka Takagi , Naotaka Tomita
发明人： Choon Yong NG , Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03B9/12
CPC分类号： H03F3/245 , H03F1/086 , H03F3/195 , H03F2200/391 , H03F2200/451
摘要： A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.
摘要翻译：一种稳定网络和具有稳定网络的半导体器件，其中稳定网络包括具有伴随高频负电阻振荡的负电阻的有源元件; 以及由与有源元件的主电极连接的电阻构成的振荡电路，与电阻并联连接并与高频负电阻振荡的振荡频率同步的电感和电容，其中执行稳定网络用于抑制伴随Gunn振荡的负电阻并获得稳定和高效的功率放大。

2. 发明申请

US20120218045A1 CLASS-C POWER AMPLIFIER 有权
标题翻译： CLASS-C功率放大器
公开(公告)号：US20120218045A1
公开(公告)日：2012-08-30
申请号：US13267116
申请日：2011-10-06
申请人： Kazutaka Takagi , Naotaka Tomita
发明人： Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F3/04
CPC分类号： H03F1/0261 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/48227 , H01L2924/1305 , H03F1/565 , H03F3/60 , H03F2200/387 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a class-C power amplifier includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being less than π(rad), and load impedance of a fundamental wave being expressed as Z1=R1+j·X1 and load impedance of a 2nd harmonic being expressed as Z2=R2+j·X2 which are observed from a dependent current source of an equivalent circuit of the amplifying element, wherein a relationship between variables X1 and R1 is set to −R1
摘要翻译：根据一个实施例，C类功率放大器包括其电源电压表示为Vdc并且其最大电流表示为Imax的放大元件，放大元件的导通角和θ小于＆amp; Gr（rad）并且基波的负载阻抗表示为Z1 = R1 + j·X1，二次谐波的负载阻抗表示为Z2 = R2 + j·X2，其从放大电路的等效电路的相关电流源观察到元素，其中变量X1和R1之间的关系被设置为-R1 <= X1 <= R1，变量R1被设置为R1 = Vdc / Imax·＆pgr;·{1-cos（＆Theta; o / 2）} / { ＆thetas; o / 2-sin（＆thetas; o）/ 2}，变量X2 / X1设置为X2 / X1 = - {＆amp; tt; o / 2-sin（＆Thetas; o）/ 2} / {sin（＆thetas ; / 2）-sin（1.5·＆tt; o）/ 3），或者将各变量设定为大致相等。

3. 发明申请

US20110018631A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20110018631A1
公开(公告)日：2011-01-27
申请号：US12780280
申请日：2010-05-14
申请人： Choon Yong Ng , Kazutaka Takagi , Naotaka Tomita
发明人： Choon Yong Ng , Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F1/00
CPC分类号： H03F1/086 , H03F1/14 , H03F3/193 , H03F3/211
摘要： According to one embodiment, there is a semiconductor device including a first active element, a second active element connected in parallel with the first active element, and a first stabilization circuit connected between a gate of the first active element and a gate of the second active element and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, the first stabilization circuit having a resonant frequency equal to an odd mode resonant frequency.

4. 发明授权

US08643438B2 Class-AB power amplifier 有权
标题翻译： AB类功率放大器
公开(公告)号：US08643438B2
公开(公告)日：2014-02-04
申请号：US13267115
申请日：2011-10-06
申请人： Kazutaka Takagi , Naotaka Tomita
发明人： Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F3/60
CPC分类号： H03F1/3205 , H03F1/565 , H03F3/195 , H03F3/601 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/391
摘要： According to an embodiment, a class-AB power amplifier includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being more than π(rad) and less than 2·π(rad), and load impedance of a fundamental wave being expressed as Z1=R1+j·X1 and load impedance of a 2nd harmonic being expressed as Z2=R2+j·X2 which are observed from a dependent current source of an equivalent circuit of the amplifying element, wherein a relationship between variables X1 and R1 is set to −R1
摘要翻译：根据实施例，AB类功率放大器包括其电源电压表示为Vdc并且其最大电流表示为Imax的放大元件，放大元件的导通角θo大于pi（rad）且小于 2·pi（rad），基波的负载阻抗表示为Z1 = R1 + j·X1，二次谐波的负载阻抗表示为Z2 = R2 + j·X2，从相关电流源放大元件的等效电路，其中变量X1和R1之间的关系被设置为-R1 <= X1 <= R1，变量R1被设置为R1 = Vdc / Imax·pi·{1-cos（θo/ 2） } / {θo/ 2-sin（θo）/ 2}，并且将变量X2 / X1设置为X2 / X1 = - {θo/ 2-sin（θo）/ 2} / {sin（θo/ 2）（1.5·θo）/ 3}，或者将每个变量设置为基本上相等。

5. 发明授权

US08604883B2 Class-C power amplifier 有权
标题翻译： C类功率放大器
公开(公告)号：US08604883B2
公开(公告)日：2013-12-10
申请号：US13267116
申请日：2011-10-06
申请人： Kazutaka Takagi , Naotaka Tomita
发明人： Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F3/04
CPC分类号： H03F1/0261 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/48227 , H01L2924/1305 , H03F1/565 , H03F3/60 , H03F2200/387 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a class-C power amplifier includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being less than π(rad), and load impedance of a fundamental wave being expressed as Z1=R1+j·X1 and load impedance of a 2nd harmonic being expressed as Z2=R2+j·X2 which are observed from a dependent current source of an equivalent circuit of the amplifying element, wherein a relationship between variables X1 and R1 is set to −R1
摘要翻译：根据一个实施例，C类功率放大器包括其电源电压表示为Vdc并且其最大电流表示为Imax的放大元件，放大元件的导通角度θo小于pi（rad），负载基波的阻抗表示为Z1 = R1 + j·X1，二次谐波的负载阻抗表示为从放大元件的等效电路的依赖电流源观测到的Z2 = R2 + j·X2，其中变量X1和R1之间的关系被设置为-R1 <= X1 <= R1，变量R1被设置为R1 = Vdc / Imax·pi·{1-cos（θo/ 2）} / {thetao / 2-sin（ theta）/ 2}，并且将变量X2 / X1设置为X2 / X1 = - {θo/ 2-sin（θo）/ 2} / {sin（θ/ 2）-sin（1.5·theta）/ 3} 或者将每个变量设置为基本上相等。

6. 发明申请

US20120218040A1 CLASS-AB POWER AMPLIFIER 有权
标题翻译： CLASS-AB功率放大器
公开(公告)号：US20120218040A1
公开(公告)日：2012-08-30
申请号：US13267115
申请日：2011-10-06
申请人： Kazutaka Takagi , Naotaka Tomita
发明人： Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F3/60 , H03F3/16
CPC分类号： H03F1/3205 , H03F1/565 , H03F3/195 , H03F3/601 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/391
摘要： According to an embodiment, a class-AB power amplifier includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being more than π(rad) and less than 2·πr(rad), and load impedance of a fundamental wave being expressed as Z1=R1+j·X1 and load impedance of a 2nd harmonic being expressed as Z2=R2+j·X2 which are observed from a dependent current source of an equivalent circuit of the amplifying element, wherein a relationship between variables X1 and R1 is set to −R1
摘要翻译：根据实施例，AB类功率放大器包括其电源电压表示为Vdc并且其最大电流表示为Imax的放大元件，放大元件的导通角和θ大于＆amp; Gr（rad）小于2·＆rg r（rad），基波的负载阻抗表示为Z1 = R1 + j·X1，二次谐波的负载阻抗表示为Z2 = R2 + j·X2，从放大元件的等效电路的依赖电流源，其中变量X1和R1之间的关系被设置为-R1 <= X1 <= R1，变量R1被设置为R1 = Vdc / Imax·＆pgr;·{1- cos（＆thetas; o / 2）} / {＆thetas; o / 2-sin（＆thetas; o）/ 2}，变量X2 / X1设置为X2 / X1 = - {＆Thetas; o / 2-sin ; o）/ 2} / {sin（＆thetas; o / 2）-sin（1.5·＆thetas; o）/ 3}，或者将每个变量设置为基本上相等。

7. 发明申请

US20110298552A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110298552A1
公开(公告)日：2011-12-08
申请号：US13211806
申请日：2011-08-17
申请人： Choon Young NG , Kazutaka Takagi , Naotaka Tomita
发明人： Choon Young NG , Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03B5/12
CPC分类号： H03F1/086 , H03F1/14 , H03F3/193 , H03F3/211
摘要： According to one embodiment, there is a semiconductor device including a first active element, a second active element connected in parallel with the first active element, and a first stabilization circuit connected between a gate of the first active element and a gate of the second active element and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, the first stabilization circuit having a resonant frequency equal to an odd mode resonant frequency.
摘要翻译：根据一个实施例，存在包括第一有源元件，与第一有源元件并联连接的第二有源元件的半导体器件，以及连接在第一有源元件的栅极和第二有源元件的栅极之间的第一稳定电路元件，并配置有栅极旁路电阻器，栅极旁路电容器和栅极旁路电感器的并联电路，第一稳定电路具有等于奇数模式谐振频率的谐振频率。

8. 发明申请

US20090256210A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20090256210A1
公开(公告)日：2009-10-15
申请号：US12300795
申请日：2007-11-28
申请人： Keiichi Matsushita , Kazutaka Takagi , Naotaka Tomita
发明人： Keiichi Matsushita , Kazutaka Takagi , Naotaka Tomita
IPC分类号： H01L27/06 , H01L21/336
CPC分类号： H01L29/7787 , H01L27/0251 , H01L27/0629 , H01L29/2003 , H01L29/402 , H01L29/41725
摘要： A semiconductor device, which can prevent an element breakdown by alleviating of electric field concentrations, and can also prevent reduction of gain is provided.It includes: a source electrode (21) formed on a semiconductor layer (12); a drain electrode (23) formed on the semiconductor layer (12); a gate electrode (22) formed between the source electrode (21) and the drain electrode (23); an insulating film (24) formed on the semiconductor layer (12) and the gate electrode (22); a field plate electrode (25) formed on the insulating film (24); and a resistor (26) for connecting the field plate electrode (25) and the source electrode (21).
摘要翻译：提供了可以通过减少电场浓度来防止元件击穿的半导体器件，并且还可以防止增益的降低。它包括：形成在半导体层（12）上的源极（21）; 形成在所述半导体层（12）上的漏电极（23）。形成在源电极（21）和漏电极（23）之间的栅电极（22）。形成在半导体层（12）和栅电极（22）上的绝缘膜（24）; 形成在绝缘膜（24）上的场板电极（25）; 以及用于连接场板电极（25）和源电极（21）的电阻器（26）。

9. 发明授权

US08653896B2 Class-AB power amplifier 有权
标题翻译： AB类功率放大器
公开(公告)号：US08653896B2
公开(公告)日：2014-02-18
申请号：US13267138
申请日：2011-10-06
申请人： Kazutaka Takagi , Naotaka Tomita
发明人： Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03F3/14
CPC分类号： H03F3/60 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/0261 , H03F1/565 , H03F2200/387 , H01L2924/00014 , H01L2924/00
摘要： A class-AB power amplifier according to the present embodiment includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being more than π(rad) and less than 2·π(rad), and load impedance of a fundamental wave being expressed as Z1=R1+j·X1, load impedance of a 2nd harmonic being expressed as Z2=R2+j·X2, and load impedance of a 3rd harmonic being expressed as Z3=R3+j−X3 which are observed from a dependent current source of an equivalent circuit of the amplifying element, and a relationship between variables X1 and R1 is set to −0.5·R1
摘要翻译：根据本实施例的AB类功率放大器包括其电源电压表示为Vdc并且其最大电流表示为Imax的放大元件，放大元件的导通角θo大于pi（rad）且小于 2·pi（rad），基波的负载阻抗表示为Z1 = R1 + j·X1，二次谐波的负载阻抗表示为Z2 = R2 + j·X2，三次谐波的负载阻抗为表示为从放大元件的等效电路的依赖电流源观察到的Z3 = R3 + j-X3，变量X1和R1之间的关系设置为-0.5·R1 <= X1 <= 0.5·R1，变量R1设定为R1 = Vdc / Imax·{1-cos（thetao / 2）}·pi /（θo/ 2-sin（θo）/ 2），变量X2 / X1设定为X2 / X1 = -2 ·{theta-sin（θo）} / {sin（θo/ 2）-sin（1.5·θo）/ 3}，变量X3 / X1设定为X3 / X1 = {theta-sin（θo）} / sin（θo）/ 3-sin（2θo）/ 6}，或者将每个变量设置成为相等。

10. 发明授权

US08427248B2 Stabilization network and a semiconductor device having the stabilization network 有权
标题翻译：稳定网络和具有稳定网络的半导体器件
公开(公告)号：US08427248B2
公开(公告)日：2013-04-23
申请号：US12417089
申请日：2009-04-02
申请人： Choon Yong Ng , Kazutaka Takagi , Naotaka Tomita
发明人： Choon Yong Ng , Kazutaka Takagi , Naotaka Tomita
IPC分类号： H03B9/12 , H03B7/06
CPC分类号： H03F3/245 , H03F1/086 , H03F3/195 , H03F2200/391 , H03F2200/451
摘要： A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.
摘要翻译：一种稳定网络和具有稳定网络的半导体器件，其中稳定网络包括具有伴随高频负电阻振荡的负电阻的有源元件; 以及由与有源元件的主电极连接的电阻构成的振荡电路，与电阻并联连接并与高频负电阻振荡的振荡频率同步的电感和电容，其中执行稳定网络用于抑制伴随Gunn振荡的负电阻并获得稳定和高效的功率放大。

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