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    • 9. 发明申请
    • ETCHANT SOLUTIONS AND ADDITIVES THEREFOR
    • 其他解决方案及其添加剂
    • WO2006061741A3
    • 2008-01-17
    • PCT/IB2005053989
    • 2005-11-30
    • KONINKL PHILIPS ELECTRONICS NVBURDINSKI DIRKBRANS HAROLD
    • BURDINSKI DIRKBRANS HAROLD
    • C23F1/02C23F1/26C23F1/30G03F7/00
    • C23F1/30B82Y10/00B82Y30/00B82Y40/00C23F1/02C23F1/26G03F7/0002
    • The present invention is concerned with etchant or etching solutions and additives therefor, a process of preparing the same, a process of patterning a substrate employing the same, a patterned substrate thus prepared in accordance with the present invention and an electronic device including such a patterned substrate. An etchant solution according to the present invention for patterned etching of at least one surface or surface coating of a substrate comprises nitric acid, a nitrite salt, a halogenated organic acid represented by the formula C(H)n(Hal)m[C(H)o(Hal)p]qC?2H, where Hal represents bromo, chloro, fluoro or iodo, where n is 0, 1, 2 or 3, and m is 0, 1, 2 or 3, with the proviso that m + n = 3; o is 0 or 1, p is 1 or 2, with the proviso that o + p = 2; q is 0 or 1, with the proviso that q + m = 1 , 2, 3 or 4; and balance water.
    • 本发明涉及蚀刻剂或其蚀刻溶液及其添加剂,其制备方法,使用该方法的基材图案化方法,根据本发明制备的图案化基材和包含这种图案化的电子器件 基质。 根据本发明的用于图案化蚀刻底物的至少一个表面或表面涂层的蚀刻剂溶液包括硝酸,亚硝酸盐,由式C(H)n(Hal)m [C(H) H)o(Hal)p] qC 2 H 2,其中Hal表示溴,氯,氟或碘,其中n为0,1,2或3,m为0,1,2或3,条件是m + n = 3; o为0或1,p为1或2,条件是o + p = 2; q为0或1,条件是q + m = 1,2,3或4; 并平衡水分。
    • 10. 发明申请
    • NANOFABRICATION BASED ON SAM GROWTH
    • 基于SAM生长的南非
    • WO2006067694A2
    • 2006-06-29
    • PCT/IB2005054250
    • 2005-12-14
    • KONINKL PHILIPS ELECTRONICS NVBURDINSKI DIRKSHARPE RUBEN B A
    • BURDINSKI DIRKSHARPE RUBEN B A
    • G03F7/00
    • G03F7/0002B82Y10/00B82Y40/00
    • The present invention relates to a process of nano fabrication based on nucleated SAM growth, to patterned substrates prepared thereby, to a nano wire or grid of nanowires prepared thereby and to electronic devices including the same. In particular, there is provided a process which comprises applying a first SAM- forming molecular species to a first surface region of the substrate surface, so as to provide a first SAM defining a scaffold pattern on the first surface region; and applying a second SAM-forming molecular species to at least a second surface region of said substrate surface which is not covered by the first SAM, whereby a second replica SAM comprising the second SAM-forming molecular species selectively forms on substrate surface adjacent to at least one edge of said first SAM.
    • 本发明涉及一种基于有核SAM生长的纳米制造方法,由其制备的图案化衬底,由其制备的纳米线或纳米线网格以及包括该纳米线的电子器件。 特别地,提供了一种方法,其包括将第一SAM形成分子物质施加到衬底表面的第一表面区域,以便在第一表面区域上提供限定支架图案的第一SAM; 以及将第二SAM形成分子物质施加到所述基底表面的至少第二表面区域,所述第二表面区域未被所述第一SAM覆盖,由此包含所述第二SAM形成分子种类的第二副本SAM选择性地形成在邻近于 所述第一SAM的至少一个边缘。