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1. 发明申请

WO2008021093A3 PROBE BEAM PROFILE MODULATED OPTICAL REFLECTANCE SYSTEM AND METHODS 审中-公开
标题翻译：探头光束轮廓调制光学反射系统及方法
公开(公告)号：WO2008021093A3
公开(公告)日：2008-11-06
申请号：PCT/US2007017558
申请日：2007-08-07
申请人： KLA TENCOR TECHNOLOGIES , SALNIK ALEX , NICOLAIDES LENA , OPSAL JON
发明人： SALNIK ALEX , NICOLAIDES LENA , OPSAL JON
IPC分类号： G01N21/00
CPC分类号： G01N21/1717 , G01N21/4788 , G01N21/55 , G01N21/636 , G01N21/9501 , G01N2021/1731 , G01N2021/214
摘要： The present invention provides a probe beam profile - modulated optical reflectivity metrology system having a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample in a manner so that the rays within the probe beam create a spread of angles of incidence. A detector array simultaneously measures intensities of the rays within the reflected/diffracted probe beam simultaneously at different angles of incidence. The intensity and angle of incidence information is used to analyze the sample.
摘要翻译：本发明提供一种具有用于激发样品的调制泵浦源的探测光束分布调制的光学反射率测量系统。引导单独的探针光束以与样品相互作用的方式使得探针束内的光线产生入射角的扩展。检测器阵列同时以不同的入射角测量反射/衍射探测光束内的光线的强度。使用入射信息的强度和角度来分析样本。

2. 发明申请

WO2012138460A2 LED SOLAR ILLUMINATOR 审中-公开
标题翻译： LED太阳能照明灯
公开(公告)号：WO2012138460A2
公开(公告)日：2012-10-11
申请号：PCT/US2012028910
申请日：2012-03-13
申请人： KLA TENCOR CORP , ZHAO GUOHENG , LEVY ADY , SALNIK ALEX , VAEZ-IRAVANI MEHDI , NICOLAIDES LENA , NGAI SAMUEL S H
发明人： ZHAO GUOHENG , LEVY ADY , SALNIK ALEX , VAEZ-IRAVANI MEHDI , NICOLAIDES LENA , NGAI SAMUEL S H
IPC分类号： G01N21/01 , F21S2/00 , F21V8/00 , G01R31/26
CPC分类号： H05B33/0803
摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要翻译：一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置并且相对于目标表面大约九十度，其中所有阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器独立寻址光源的强度。

3. 发明专利

CA2314691C METHOD AND APPARATUS FOR DETECTION OF DEFECTS IN TEETH 未知
公开(公告)号：CA2314691C
公开(公告)日：2011-04-26
申请号：CA2314691
申请日：2000-07-28
申请人： MANDELIS ANDREAS , ABRAMS STEPHEN H , NICOLAIDES LENA , GARCIA-HECULES JOSE AGUSTIN
发明人： MANDELIS ANDREAS , ABRAMS STEPHEN H , NICOLAIDES LENA , GARCIA-HECULES JOSE AGUSTIN
IPC分类号： A61B6/14 , A61B5/00 , A61C19/04
摘要： There is provided a metrologic methodology and instrument, useful for a high-spatial-resolution dynamic diagnostic metrology and instrument, which can provide simultaneous measurements of laser-induced frequency-domain infrared photothermal radiometry (FD-PTR) and alternating-current (ac) modulated luminescence (FD-LM) signals from defects and caries in teeth intraorally. The combination of the luminescence and radiometric frequency scan techniques for inspection of defects and caries in teeth involves irradiating the tooth with a modulated (direct-current (dc) to 100 kHz) excitation source (laser) emitting in the near-ultraviolet, visible, or near-infrared spectral range, generating blackbody Planck-radiation (infrared radiometry) and ac luminescence, and comparing the obtained (amplitude and phase) luminescence and radiometric signals to those obtained from a well characterized sample (reference) to provide the clinician with numerical information on the status of a tooth. The method and device is used to scan teeth intraorally to detect caries and classify caries or the integrity of the enamel or cementum surface, classify the health and integrity of the enamel at the base of occlusal fissures, classify the health and integrity of enamel or cementum surface of the tooth and defects around the margins of restorations, locate the presence of cracks on the enamel or cementum surface, and locate and characterize cracks in dentin on prepared teeth.

4. 发明专利

CA2314691A1 METHOD AND APPARATUS FOR DETECTION OF DEFECTS IN TEETH 未知
公开(公告)号：CA2314691A1
公开(公告)日：2002-01-28
申请号：CA2314691
申请日：2000-07-28
申请人： GARCIA-HECULES JOSE AGUSTIN , MANDELIS ANDREAS , ABRAMS STEPHEN H , NICOLAIDES LENA
发明人： GARCIA-HECULES JOSE AGUSTIN , MANDELIS ANDREAS , ABRAMS STEPHEN H , NICOLAIDES LENA
IPC分类号： A61B5/00 , A61B6/14 , A61C19/04
摘要： There is provided a metrologic methodology and instrument, useful for a high-spatial-resolution dynamic diagnostic metrology and instrument, which c an provide simultaneous measurements of laser-induced frequency-domain infrared photothermal radiometry (FD-PTR) and alternating-current (ac) modulated luminescence (FD-LM) signals from defects and caries in teeth intraorally. T he combination of the luminescence and radiometric frequency scan techniques fo r inspection of defects and caries in teeth involves irradiating the tooth wit h a modulated (direct-current (dc) to 100 kHz) excitation source (laser) emittin g in the near-ultraviolet, visible, or near-infrared spectral range, generating blackbody Planck-radiation (infrared radiometry) and ac luminescence, and comparing the obtained (amplitude and phase) luminescence and radiometric signals to those obtained from a well characterized sample (reference) to provide the clinician with numerical information on the status of a tooth. T he method and device is used to scan teeth intraorally to detect caries and classify caries or the integrity of the enamel or cementum surface, classify the heal th and integrity of the enamel at the base of occlusal fissures, classify the healt h and integrity of enamel or cementum surface of the tooth and defects around them argins of restorations, locate the presence of cracks on the enamel or cementum surface, and locate and characterize cracks in dentin on prepared teeth.

5. 发明专利

CA2305477A1 NON-CONTACT PHOTOTHERMAL RADIOMETRIC METROLOGIES AND INSTRUMENTATION FOR CHARACTERIZATION OF SEMICONDUCTOR WAFERS, DEVICES AND NON ELECTRONIC MATERIALS 未知
公开(公告)号：CA2305477A1
公开(公告)日：2001-10-17
申请号：CA2305477
申请日：2000-04-17
申请人： MANDELIS ANDREAS , RODRIGUEZ MARIO , NICOLAIDES LENA , GARCIA JOSE A , PAOLONI STEFANO
发明人： MANDELIS ANDREAS , RODRIGUEZ MARIO , NICOLAIDES LENA , GARCIA JOSE A , PAOLONI STEFANO
IPC分类号： G01R31/311 , G01R31/265
摘要： There is provided a metrologic methodology, useful for in-situ, non- destructive monitoring, comprising of combination of novel signal generation and analysis techniques , computational software, and laser infrared radiometric instrumental configurations for measuring thermal and electronic properties of industrial semiconductor wafers and engineering materials. The combination of the frequency sweep (Chirp) and conventional frequency scan techniques fo r rapid measurement of electronic and thermal transport properties of semiconductor and engineering materials/devices involves providing a sample such as a semiconductor wafer or other engineeri ng material, irradiating the sample with an excitation source (laser), generating a square-wave chirp from a dual-channel fast Fourier transform (FFT) analyzer to drive an acousto-optic modulator and produce periodic frequency sweeps (Chirps) of the laser beam in the range including (but not confined to) do to 100 kHz, generating a plank-radiation (infrared radiometric) signal in an instrumentation of transfer function, H(f), by fitting the frequency-scan data from a reference sample t o a theoretical model, storing the data from the arbitrary sample in a personal computer, fitting t he obtained (amplitude and phase) radiometric signal from arbitrary semiconductor samples to the same theoretical model, corrected for the instrumental transfer function to obtain the thermal and/or electronic parameters of the said samples. The common rejection mode (dual pulse) method for detectio n of very weak inhomogeneities among materials involves: providing a sample of the material , irradiating the sample with an optical or otherwise excitation source of thermal waves, generating a real time periodic waveform consisting of two incident pulses, detecting the signal (phototherm al or any signal generation principle) and feeding it to a lock-in amplifier. This methodolog y is not confined to thermal-wave signal generation, but encompasses all manner of modulated signals, such as acoustic, luminescent optical, ultrasonic, X-rays and other signal generation methods. The multiparameter computational method for determining a unique set of thermal and electronic parameters of industrial semiconductor (i.e. Si) wafers, from frequency domain measurements, involves : providing a semiconductor wafer (or sample), irradiating the sample with a periodic optical (laser) or other free- carrier raising energy source generating a photothermal signal, detecting sa id photothermal (radiometric or otherwise) signal, imputting said signal to a lock-in amplifier, storing the frequency scans in a personal computer, applying the multiparameter fitting procedure (by means of an electronic sheet or any other code program, i.e C, Fortran).The depth profilometry and roughness elimination method for determining thermal diffusivity profiles of rough samples involves: (a) providing a sample of process-related inhomogeneous material or multi-layer structures; (b) irradiating the sample with a periodically excited source (laser); (c) detecting the photothermal frequency sweep signal with a lock-in amplifier and storing the experimental data in a personal computer; (d) processing the experimental data with a heuristic approach to roughness so as to eliminate the effects of roughness; (e) applying to the processed data the theoretical/computational model to reconstruct the thermal diffusivity profile.

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