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1. 发明申请

US20140179117A1 METHOD FOR FORMING A LAYER ON A SUBSTRATE AT LOW TEMPERATURES 有权
标题翻译：在低温下在基材上形成层的方法
公开(公告)号：US20140179117A1
公开(公告)日：2014-06-26
申请号：US14131943
申请日：2012-07-12
申请人： Jurgen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
发明人： Jurgen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/02252 , H01L21/67115 , H01L31/02167 , H01L31/18 , Y02E10/50
摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
摘要翻译：描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

2. 发明授权

US09252011B2 Method for forming a layer on a substrate at low temperatures 有权
标题翻译：在低温下在基材上形成层的方法
公开(公告)号：US09252011B2
公开(公告)日：2016-02-02
申请号：US14131943
申请日：2012-07-12
申请人： Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
发明人： Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
IPC分类号： H01L21/31 , H01L21/02 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32 , H01L21/67 , H01L31/0216 , H01L31/18
CPC分类号： H01L21/02238 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/02252 , H01L21/67115 , H01L31/02167 , H01L31/18 , Y02E10/50
摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
摘要翻译：描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

3. 发明申请

US20060105584A1 Device and method for thermally treating semiconductor wafers 有权
标题翻译：用于热处理半导体晶片的装置和方法
公开(公告)号：US20060105584A1
公开(公告)日：2006-05-18
申请号：US10524871
申请日：2003-07-25
申请人： Georg Roters , Steffen Frigge , Sing Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
发明人： Georg Roters , Steffen Frigge , Sing Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
IPC分类号： H01L21/324
CPC分类号： H01L21/67115 , H01L21/28247 , H01L21/32105
摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.
摘要翻译：一种用于热处理半导体晶片的装置，其具有至少一个待氧化的硅层和不被氧化的金属层，优选钨层。本发明的装置包括：至少一个辐射源; 接收衬底的处理室，其中至少一个壁部分位于辐射源附近，并且对于所述辐射源的辐射基本上是透明的; 以及至少一个覆盖板，位于基板与位于辐射源附近的处理室的壁部分之间，所述盖板的尺寸被选择为使得其相对于基板完全覆盖处理室的透明壁部分为了防止包含来自所述衬底的金属，金属氧化物或金属氢氧化物如钨，氧化钨或氢氧化钨的材料沉积在或蒸发到处理室的透明壁部分上。

4. 发明授权

US07094637B2 Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates 有权
标题翻译：在钨硅栅极的选择性侧壁氧化期间最小化氧化钨的气相沉积的方法
公开(公告)号：US07094637B2
公开(公告)日：2006-08-22
申请号：US10694593
申请日：2003-10-27
申请人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
发明人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
IPC分类号： H01L21/337
CPC分类号： H01L21/32105 , H01L21/28061
摘要： During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
摘要翻译：在包括本身已知的多晶硅层和钨层的栅极结构的选择性氧化期间，通过特殊工艺防止或至少大大降低了氧化钨的气相沉积。栅极结构在氢/水混合物的处理步骤之前和（如果合适的话）之后由含氢非水惰性气体起作用。

5. 发明授权

US07151060B2 Device and method for thermally treating semiconductor wafers 有权
公开(公告)号：US07151060B2
公开(公告)日：2006-12-19
申请号：US10524871
申请日：2003-07-25
申请人： Georg Roters , Steffen Frigge , Sing Pin Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
发明人： Georg Roters , Steffen Frigge , Sing Pin Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
IPC分类号： H01L21/324 , H01L21/477 , H01L21/42 , H01L21/26
CPC分类号： H01L21/67115 , H01L21/28247 , H01L21/32105
摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

6. 发明授权

US06706616B1 Method for improving thermal process steps 失效
标题翻译：改善热处理步骤的方法
公开(公告)号：US06706616B1
公开(公告)日：2004-03-16
申请号：US09914749
申请日：2002-01-14
申请人： Wilhelm Kegel , Thomas Schuster
发明人： Wilhelm Kegel , Thomas Schuster
IPC分类号： H01L2176
CPC分类号： H01L21/02233 , H01L21/02255 , H01L21/31662
摘要： A method for controlling temperature of a semiconductor wafer in a process chamber includes heating the chamber from a starting temperature to a stabilizing temperature at a heating rate of approximately 12 degrees Celsius per second and maintaining the chamber at the stabilizing temperature for a selected stabilization period. The chamber is then heated from the stabilizing temperature to a process temperature at a heating rate of approximately 10 degrees Celsius per second. This process temperature is maintained for a selected processing period. After the period, the chamber is cooled to an exit temperature at a selected low cooling rate.
摘要翻译：用于控制处理室中的半导体晶片的温度的方法包括以约12摄氏度/秒的加热速率将室从起始温度加热至稳定温度，并将室保持在稳定温度下达到选定的稳定期。然后将室从稳定温度加热至约10摄氏度/秒的加热速率的过程温度。该处理温度保持在所选择的处理周期。在此期间之后，将腔室以选定的低冷却速度冷却至出口温度。

7. 发明授权

US06699747B2 Method for increasing the capacitance in a storage trench 失效
标题翻译：用于增加存储沟槽中的电容的方法
公开(公告)号：US06699747B2
公开(公告)日：2004-03-02
申请号：US10298394
申请日：2002-11-18
申请人： Alexander Ruff , Wilhelm Kegel , Wolfram Karcher , Martin Schrems
发明人： Alexander Ruff , Wilhelm Kegel , Wolfram Karcher , Martin Schrems
IPC分类号： H01L218242
CPC分类号： H01L27/10861 , H01L21/31683 , H01L28/56 , H01L29/66181
摘要： In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.
摘要翻译：在形成沟槽电容器的方法中，将第一层氧化硅沉积在存储沟槽中，并且通过化学气相沉积工艺在第一层上沉积硅层。一层可氧化金属沉积在硅层上。硅层和可氧化金属层随后被氧化以形成氧化硅层和金属氧化物层。

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