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1. 发明授权

US10593767B2 Field plate structure for power semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10593767B2
公开(公告)日：2020-03-17
申请号：US14771095
申请日：2014-11-26
申请人： Chun Wai Ng , Iftikhar Ahmed , Johnny Kin On Sin
发明人： Chun Wai Ng , Iftikhar Ahmed , Johnny Kin On Sin
IPC分类号： H01L29/40 , H01L29/78 , H01L29/739 , H01L29/06 , H01L29/732 , H01L29/45 , H01L29/66 , H01L29/861 , H01L21/285 , H01L29/73 , H01L29/74 , H01L29/10
摘要： A structure and a manufacturing method of a power semiconductor device are provided. A structure of thin semi-insulating field plates (32, 33, 34) located between metal electrodes (21, 22, 23) at the surface of the power semiconductor device is provided. The thin semi-insulating field plates (32, 33, 34) are formed by depositing before metallization and annealing after the metallization. The present invention can be used in lateral power semiconductor devices and vertical power semiconductor devices.

2. 发明申请

US20160087050A1 POWER SEMICONDUCTOR DEVICES HAVING A SEMI-INSULATING FIELD PLATE 有权
标题翻译：具有半绝缘场板的功率半导体器件
公开(公告)号：US20160087050A1
公开(公告)日：2016-03-24
申请号：US14655717
申请日：2014-12-10
申请人： Johnny Kin-On Sin , Iftikhar Ahmed , Chun-Wai Ng
发明人： Johnny Kin-On Sin , Iftikhar Ahmed , Chun-Wai Ng
IPC分类号： H01L29/40 , H01L29/423 , H01L29/73 , H01L29/417 , H01L23/00 , H01L29/78
CPC分类号： H01L29/405 , H01L24/46 , H01L29/0619 , H01L29/41708 , H01L29/41758 , H01L29/42304 , H01L29/42356 , H01L29/73 , H01L29/732 , H01L29/78 , H01L29/7811 , H01L29/7816 , H01L29/7823 , H01L29/8611 , H01L2224/4502 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor device comprising a first metal electrode and a second metal electrode formed on a first substrate surface of a semiconductor substrate, a semi-insulating field plate interconnecting said first and second metal electrodes, and an insulating oxide layer extending between said first and second metal electrodes and between said field plate and said semiconductor substrate, wherein said semi-insulating field plate is a titanium nitride (TiN) field plate.
摘要翻译：一种功率半导体器件，包括形成在半导体衬底的第一衬底表面上的第一金属电极和第二金属电极，将所述第一和第二金属电极互连的半绝缘场板和在所述第一和第二金属电极之间延伸的绝缘氧化物层金属电极和所述场板和所述半导体衬底之间，其中所述半绝缘场板是氮化钛（TiN）场板。

3. 发明授权

US06294445B1 Single mask process for manufacture of fast recovery diode 有权
标题翻译：用于制造快速恢复二极管的单掩模工艺
公开(公告)号：US06294445B1
公开(公告)日：2001-09-25
申请号：US09510753
申请日：2000-02-22
申请人： Igor Bol , Iftikhar Ahmed
发明人： Igor Bol , Iftikhar Ahmed
IPC分类号： H01L2128
CPC分类号： H01L29/66143 , H01L29/66128 , H01L29/8611 , H01L29/872
摘要： A single mask process for manufacture of a FRED employs a thick oxide layer over an N type silicon surface and a thin nitride layer over the oxide. A single mask defines FRED device spaced P diffusions. The oxide spanning the P diffusions is laterally etched away, under the nitride layer to expose the surface of adjacent P diffusions and the spanning N type silicon surface. All nitride is then removed and a top contact layer of aluminum is applied atop the silicon surface, contacting a P guard ring diffusion; the surface of the P diffusions defining PN junctions; and the top of the N silicon to define a Schottky diode contact.
摘要翻译：用于制造FRED的单个掩模工艺在N型硅表面上形成厚的氧化物层，并在氧化物上采用薄的氮化物层。单个掩模定义FRED设备间隔开的P扩散。跨越P扩散的氧化物被横向蚀刻掉，在氮化物层下方暴露相邻的P扩散和跨越N型硅表面的表面。然后去除所有氮化物，并且将铝的顶部接触层施加在硅表面顶部，接触P保护环扩散; 定义PN结的P扩散表面; 和N硅的顶部来定义肖特基二极管接触。

4. 发明授权

US06525389B1 High voltage termination with amorphous silicon layer below the field plate 有权
标题翻译：高压端子与场板下面的非晶硅层
公开(公告)号：US06525389B1
公开(公告)日：2003-02-25
申请号：US09510613
申请日：2000-02-22
申请人： Iftikhar Ahmed
发明人： Iftikhar Ahmed
IPC分类号： H01L27095
CPC分类号： H01L29/404 , H01L21/765
摘要： A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two guard rings in an implant and drive system. A first metal ring overlies and contacts the outermost diffusion. A second metal ring which acts as a field plate contacts the second diffusion and overlaps the outermost oxide ring. A third metal ring, which acts as a field plate, is a continuous portion of the active area top contact and overlaps the second oxide ring. The termination is useful for high voltage (of the order of 1200 volt) devices. The rings are segments of a common aluminum or palladium contact layer. A thin high resistivity layer of amorphous silicon is deposited over the full upper surface of the wafer and is disposed between the wafer upper surface and all of the metal rings.
摘要翻译：用于制造FRED装置或任何功率半导体器件的端接结构和减小的掩模工艺包括在植入物和驱动系统中的两个保护环的定义中使用的至少两个同心扩散保护环和两个间隔开的二氧化硅环。第一金属环覆盖并接触最外面的扩散。作为场板的第二金属环接触第二扩散并与最外面的氧化物环重叠。用作场板的第三金属环是有源区顶部接触的连续部分并与第二氧化物环重叠。该端接对于高电压（大约1200伏）器件是有用的。环是常见的铝或钯接触层的段。在晶片的整个上表面上沉积非晶硅的薄的高电阻率层，并且设置在晶片上表面和所有金属环之间。

5. 发明授权

US06699775B2 Manufacturing process for fast recovery diode 有权
标题翻译：快速恢复二极管的制造工艺和端接结构
公开(公告)号：US06699775B2
公开(公告)日：2004-03-02
申请号：US10234905
申请日：2002-08-30
申请人： Igor Bol , Iftikhar Ahmed
发明人： Igor Bol , Iftikhar Ahmed
IPC分类号： H01L2128
CPC分类号： H01L29/404 , H01L29/0619 , H01L29/66136 , H01L29/861
摘要： A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two guard rings. A first metal ring overlies and contacts the outermost diffusion. A second metal ring which acts as a field plate contacts the second diffusion and overlaps the outermost oxide ring. A third metal ring, which acts as a field plate, is a continuous portion of the active area top contact and overlaps the second oxide ring. The termination is useful for high voltage (of the order of 1200 volt) devices. The rings are segments of a common aluminum or Palladium contact layer.
摘要翻译：用于制造FRED装置或任何功率半导体器件的端接结构和减少的掩模工艺包括在两个保护环的定义中使用的至少两个同心扩散保护环和两个间隔开的二氧化硅环。第一金属环覆盖并接触最外面的扩散。作为场板的第二金属环接触第二扩散并与最外面的氧化物环重叠。用作场板的第三金属环是有源区顶部接触的连续部分并与第二氧化物环重叠。该端接对于高电压（大约1200伏）器件是有用的。环是普通铝或钯接触层的段。

6. 发明授权

US06417554B1 Latch free IGBT with schottky gate 有权
标题翻译：具有肖特基门的无闩锁IGBT
公开(公告)号：US06417554B1
公开(公告)日：2002-07-09
申请号：US09559282
申请日：2000-04-27
申请人： Iftikhar Ahmed
发明人： Iftikhar Ahmed
IPC分类号： H01L27095
CPC分类号： H01L29/872 , H01L29/739
摘要： A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The depletion region is formed atop an emitter region which emits carriers into the depletion region in response to the turn on of the gate and the injection of carriers from the Schottky gate.
摘要翻译：不能锁定的三层IGBT设置有沟槽栅极和与沟槽栅极周围的耗尽区域的肖特基接触。发射极触点连接到扩散到耗尽区的基极扩散区。耗尽区形成在响应于栅极导通和从肖特基栅极注入载流子而将载流子发射到耗尽区的发射极区域的顶部。

7. 发明授权

US06486524B1 Ultra low Irr fast recovery diode 有权
标题翻译：超低Irr快速恢复二极管
公开(公告)号：US06486524B1
公开(公告)日：2002-11-26
申请号：US09510752
申请日：2000-02-22
申请人： Iftikhar Ahmed
发明人： Iftikhar Ahmed
IPC分类号： H01L27095
CPC分类号： H01L29/872 , H01L27/0788 , H01L27/0814 , H01L29/861
摘要： A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact having a lower barrier height than the conventional aluminum, and is palladium silicide with a top contact layer of aluminum.
摘要翻译：具有超低Irr的FRED器件采用接触层，该接触层在N型硅衬底中接触间隔开的P扩散，并且还接触跨越P扩散的硅表面。接触层由具有比常规铝更低的势垒高度的触点形成，并且是具有铝的顶部接触层的钯硅化物。

8. 发明授权

US5614771A Extended high voltage SCR switch 失效
标题翻译：扩展高压SCR开关
公开(公告)号：US5614771A
公开(公告)日：1997-03-25
申请号：US579514
申请日：1995-12-27
申请人： Iftikhar Ahmed , Steven A. Buhler
发明人： Iftikhar Ahmed , Steven A. Buhler
IPC分类号： H01L27/06 , H01L27/08 , H01L27/12 , H01L29/74 , H01H19/64
CPC分类号： H01L29/7436 , H01L27/0688 , H01L27/0817 , H01L27/1203 , H01L29/7408 , Y10T307/747
摘要： A high voltage switch in which an extended SCR is built in an insulated polysilicon layer for providing a single structure high voltage switch. The high voltage SCR is built by building unit SCRs comprising a cathode, a gate, an anode and a voltage sustaining area. The unit SCRs are built as horizontal linear devices. The unit SCRs can then be combined to form a large SCR by building each unit SCR so that the anode of one SCR is at least partially contiguous with the cathode of the next unit SCR.
摘要翻译：一种高压开关，其中扩展的SCR内置在绝缘多晶硅层中，用于提供单个结构的高压开关。高压SCR由构成单元SCR构成，其包括阴极，栅极，阳极和电压维持区域。单元SCR构建为水平线性器件。然后可以通过构建每个单元SCR来组合单元SCR以形成大的SCR，使得一个SCR的阳极与下一个单元SCR的阴极至少部分邻接。

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