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1. 发明申请

WO2017195052A1 INTEGRATED ELECTRO-OPTICAL MODULE ASSEMBLY 审中-公开
标题翻译：集成的电光模块组件
公开(公告)号：WO2017195052A1
公开(公告)日：2017-11-16
申请号：PCT/IB2017/052140
申请日：2017-04-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： DANG, Bing , CHEN, Qianwen , POLASTRE, Robert, John , WEBB, Bucknell , LU, Minhua , KNICKERBOCKER, John , ANDRY, Paul
IPC分类号： H01M2/18
摘要： An electro-optical module assembly is provided that includes a flexible substrate (12P) having a first surface (14A) and a second surface (14B) opposite the first surface (14A), wherein the flexible substrate (12P) contains an opening (17) located therein that extends from the first surface (14A) to the second surface (14B). An optical component (24) is located on the second surface (14B) of the flexible substrate (12P) and is positioned to have a surface exposed by the opening (17). At least one electronic component (16A, 16B) is located on a first portion of the first surface (14A) of the flexible substrate (12P), and at least one micro-energy source (28) is located on a second portion of the first surface (14A) of the flexible substrate (12P).
摘要翻译：提供了一种电光模块组件，其包括具有第一表面（14A）和与第一表面（14A）相对的第二表面（14B）的柔性基板（12P），其中柔性基板（12P）包含位于其中的开口（17），该开口从第一表面（14A）延伸到第二表面（14B）。光学部件（24）位于柔性基板（12P）的第二表面（14B）上并且定位成具有由开口（17）暴露的表面。至少一个电子部件（16A，16B）位于柔性衬底（12P）的第一表面（14A）的第一部分上，并且至少一个微能量源（28）位于柔性衬底（12P）的第二部分上柔性衬底（12P）的第一表面（14A）。

2. 发明申请

WO2020254040A1 THERMALIZATION STRUCTURE FOR DEVICES COOLED TO CRYOGENIC TEMPERATURE 审中-公开
公开(公告)号：WO2020254040A1
公开(公告)日：2020-12-24
申请号：PCT/EP2020/063358
申请日：2020-05-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED
发明人： LEWANDOWSKI, Eric, Peter , WEBB, Bucknell , HERTZBERG, Jared, Barney , SANDBERG, Martin , JINKA, Oblesh
IPC分类号： H01L23/44
摘要： A thermalization structure is formed using a foil and a low temperature device (LTD). The foil includes a first layer of a first material. The LTD includes a surface from which heat is transferred away from the LTD. A coupling is formed between the foil and the surface of the LTD, where the coupling includes a bond formed between the foil and the surface such that forming the bond forms a set of ridges in the foil, a ridge in the set of ridges operating to dissipate the heat.

3. 发明申请

WO2011054568A1 MAGNETIC WRITER HAVING MULTIPLE GAPS WITH MORE UNIFORM MAGNETIC FIELDS ACROSS THE GAPS 审中-公开
标题翻译：具有更多均匀磁场的多个GAPS的磁性写作
公开(公告)号：WO2011054568A1
公开(公告)日：2011-05-12
申请号：PCT/EP2010/063342
申请日：2010-09-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HERGET, Philipp , BISKEBORN, Robert, Glenn , WEBB, Bucknell
发明人： HERGET, Philipp , BISKEBORN, Robert, Glenn , WEBB, Bucknell
IPC分类号： G11B5/265 , G11B5/23
CPC分类号： G11B5/3116 , G11B5/17 , G11B5/23 , G11B5/265 , G11B5/2652 , G11B5/59638
摘要： A magnetic device according to one embodiment includes a source of flux; a magnetic pole coupled to the source of flux, the magnetic pole having two or more gaps; and a low reluctance path positioned towards at least one of the gaps and not positioned towards at least one other of the gaps for affecting a magnetic field formed at the at least one of the gaps when the source of flux is generating flux. Other disclosed embodiments include devices having coil turns with a non-uniform placement in the magnetic yoke for altering a magnetic field formed at the at least one of the gaps during writing. In further embodiments, a geometry of the magnetic pole near or at one of the gaps is different than a geometry of the magnetic pole near or at another of the gaps to help equalize fields formed at the gaps when the source of flux is generating flux.
摘要翻译：根据一个实施例的磁性装置包括通量源; 耦合到磁通源的磁极，所述磁极具有两个或更多个间隙; 以及朝向所述间隙中的至少一个定位的低磁阻路径，并且朝向所述间隙中的至少另一个定位，以在所述通量源产生磁通时影响形成在所述至少一个间隙处的磁场。其他公开的实施例包括具有在磁轭中具有不均匀布置的线圈匝的装置，用于在写入期间改变在至少一个间隙处形成的磁场。在另外的实施例中，靠近或在其中一个间隙处的磁极的几何形状不同于磁极附近或在另一个间隙处的几何形状，以帮助当磁通源产生磁通时在间隙处形成的场均衡。

4. 发明申请

WO2021259712A1 SELECTIVE CHEMICAL FREQUENCY MODIFICATION OF JOSEPHSON JUNCTION RESONATORS 审中-公开
公开(公告)号：WO2021259712A1
公开(公告)日：2021-12-30
申请号：PCT/EP2021/066160
申请日：2021-06-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM DEUTSCHLAND GMBH
发明人： LEWANDOWSKI, Eric , YAU, Jeng-Bang , ZHANG, Eric , WEBB, Bucknell
IPC分类号： H01L39/24 , H01L27/18 , G06N10/00 , G06N10/40 , H01L39/223 , H01L39/2493
摘要： Techniques for selectively tuning the operating frequency of superconducting Josephson junction resonators are provided which include chemically altering a Josephson junction (110) via a plasma treatment, preferably by masked exposure of a transmon qubit die (104) to plasma (502) including reactants such as hydrogen or oxygen. In particular, the plasma treatment adjusts an electrical resistance of the Josephson junction. An apparatus for carrying out the plasma treatment is also disclosed.

5. 发明申请

WO2017195058A1 SIMPLIFIED HERMETIC PACKAGING OF A MICRO-BATTERY 审中-公开
标题翻译：微型电池的简化密封包装
公开(公告)号：WO2017195058A1
公开(公告)日：2017-11-16
申请号：PCT/IB2017/052411
申请日：2017-04-26
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： DANG, Bing , ANDRY, Paul , WEBB, Bucknell , NAH, Jae-Woong , NARASGOND, Adinath, Shantinath , LIU, Yang , KNICKERBOCKER, John
IPC分类号： H01M10/04
CPC分类号： H01M2/0207 , H01M2/1061 , H01M6/40 , H01M10/0436 , H01M2220/30
摘要： A micro-battery (50A, 50B, 50C) is provided in which a metallic sealing layer (18) is used to provide a hermetic seal between an anode side of the micro-battery (50A, 50B, 50C) and the cathode side of the micro-battery (50A, 50B, 50C). The metallic sealing layer (18) is formed around a perimeter of each metallic anode structure (16) located on the anode side and then the metallic sealing layer (18) is bonded to a solderable metal layer (32) of a wall structure present on the cathode side. The wall structure contains a cavity (34) that exposes a metallic current collector structure (24). The cavity (34) is filled with battery materials (36).
摘要翻译：提供一种微型电池（50A，50B，50C），其中使用金属密封层（18）来提供微型电池（50A，50B）的阳极侧，50℃）和微电池（50A，50B，50C）的阴极侧。金属密封层（18）围绕位于阳极侧的每个金属阳极结构（16）的周边形成，然后金属密封层（18）与存在于其上的壁结构的可焊接金属层（32）阴极侧。该壁结构包含暴露金属集流器结构（24）的空腔（34）。空腔（34）填充有电池材料（36）。

6. 发明申请

WO2016071835A1 MULTI-LAYER LASER DEBONDING STRUCTURE WITH TUNABLE ABSORPTION 审中-公开
标题翻译：多层激光雷达结构与可抽吸吸收
公开(公告)号：WO2016071835A1
公开(公告)日：2016-05-12
申请号：PCT/IB2015/058490
申请日：2015-11-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED
发明人： ANDRY, Paul , GELORME, Jeffrey , TSANG, Cornelia, Kang-I , WEBB, Bucknell
IPC分类号： H01L21/02
CPC分类号： H01L21/6835 , B32B7/12 , B32B2307/4026 , B32B2457/14 , H01L21/6836 , H01L21/76898 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： The absorption properties of both an adhesive layer and an ablation layer are employed to facilitate debonding of a device wafer and a glass handler without damaging the device wafer. The penetration depths of the adhesive and ablation layers are selected such that no more than a negligible amount of the ablation fluence reaches the surface of the device wafer.
摘要翻译：使用粘合剂层和消融层的吸收性能来促进器件晶片和玻璃处理器的剥离而不损坏器件晶片。选择粘合剂和烧蚀层的穿透深度，使得不超过可忽略量的消融注量到达器件晶片的表面。

7. 发明申请

WO2012079826A1 THIN FILM INDUCTOR WITH INTEGRATED GAPS 审中-公开
标题翻译：具有集成GAPS的薄膜电感器
公开(公告)号：WO2012079826A1
公开(公告)日：2012-06-21
申请号：PCT/EP2011/068889
申请日：2011-10-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HERGET, Philipp , FONTANA, JR, Robert, Edward , WEBB, Bucknell , GALLAGHER, William
发明人： HERGET, Philipp , FONTANA, JR, Robert, Edward , WEBB, Bucknell , GALLAGHER, William
IPC分类号： H01F3/14 , H01F17/00 , G11B5/31
CPC分类号： H01F17/0006 , H01F3/14
摘要： A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
摘要翻译：根据一个实施例的薄膜电感器包括一个或多个臂; 穿过每个臂的一个或多个导体; 所述第一铁磁磁轭部分围绕所述一个或多个臂中的第一个中的所述一个或多个导体包围，所述第一铁磁轭包括磁性顶部，磁性底部部分和位于所述一个或多个导体的相对侧上的通孔区域在一个或多个臂中的第一个中，其中磁性顶部部分和磁性底部部分通过通孔区域中的低磁阻路径耦合在一起; 以及在至少一个通孔区域中的顶部和底部之间的一个或多个非磁性间隙。还提供了附加的系统和方法。

8. 发明申请

WO2010125164A1 THROUGH SUBSTRATE VIAS 审中-公开
标题翻译：通过基板VIAS
公开(公告)号：WO2010125164A1
公开(公告)日：2010-11-04
申请号：PCT/EP2010/055867
申请日：2010-04-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , WEBB, Bucknell , COTTE, John, Michael , JAHNES, Christopher, Vincent
发明人： WEBB, Bucknell , COTTE, John, Michael , JAHNES, Christopher, Vincent
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via (240) comprises the hole and the first metal.
摘要翻译：提出了用于形成通孔的方法和装置，例如，在包括衬底的半导体晶片的一部分中形成通孔的方法。该方法包括形成围绕基板的第一部分的沟槽，使得第一部分与基板的第二部分分离，在第一部分内形成穿过基板的孔，并在孔内形成第一金属。沟槽延伸穿过衬底。第一金属从基板的前表面延伸到基板的后表面。通孔（240）包括孔和第一金属。

9. 发明申请

WO2017208113A1 MICROBATTERY WITH THROUGH-SILICON VIA ELECTRODES 审中-公开
标题翻译：通过硅通过电极的微生物
公开(公告)号：WO2017208113A1
公开(公告)日：2017-12-07
申请号：PCT/IB2017/053041
申请日：2017-05-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： WEBB, Bucknell , ANDRY, Paul
IPC分类号： H01M4/76
摘要： Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.
摘要翻译：电池及其形成方法包括阳极结构，阴极结构和导电外涂层。阳极结构包括阳极基底，在阳极基底上形成的阳极以及与阳极接触的阳极导电衬里。阴极结构包括阴极基底，在阴极基底上形成的阴极以及与阴极接触的阴极导电衬里。导电外涂层形成在阳极结构和阴极结构上以密封由阳极结构和阴极结构形成的空腔。阳极基板和阴极基板中的至少一个被与相应的阳极导电衬垫或阴极导电衬垫接触的通孔刺穿。

10. 发明申请

WO2017025858A1 ALL-SILICON HERMETIC PACKAGE AND PROCESSING FOR NARROW, LOW-PROFILE MICROBATTERIES 审中-公开
标题翻译：所有硅胶片包装和加工用于NARROW，低轮廓微型机
公开(公告)号：WO2017025858A1
公开(公告)日：2017-02-16
申请号：PCT/IB2016/054651
申请日：2016-08-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： ANDRY, Paul , WEBB, Bucknell , TSANG, Cornelia, Kang-l
IPC分类号： H01M10/04 , H01L21/50
CPC分类号： H01M2/08 , H01M2/0207 , H01M2/026 , H01M6/40 , H01M10/0436 , H01M2220/30
摘要： A microbattery structure (101) for hermetically sealed microbatteries is provided. The microbattery structure (101) includes a first silicon substrate (1001) containing at least one pedestal which houses a cathode material (1601) of a microbattery and at least one depression (1003, 1004) which houses a first sealant material (1301) of the microbattery, the structure further includes a second silicon substrate (201) containing at least one pedestal which houses an anode material (601) of the microbattery and at least one depression (202, 204) which houses a second sealant material (801) of the microbattery. An insulated centerpiece (1401) is bonded to the first sealant material (1301) present in at least two depressions (202,204) on the first silicon substrate (1001). An interlock structure is formed by aligning and superimposing the second silicon substrate (201) on the first silicon substrate (1001) in a mortise and tenon fashion and sealing the two substrates (1001, 201) using a high force.
摘要翻译：提供了用于气密密封的微电池的微电池结构（101）。微电池结构（101）包括第一硅衬底（1001），第一硅衬底（1001）包含容纳微电池的阴极材料（1601）的至少一个基座和容纳第一密封剂材料（1301）的至少一个凹部（1003,1004）所述微电池还包括第二硅衬底（201），所述第二硅衬底（201）包含容纳所述微电池的阳极材料（601）的至少一个基座和至少一个容纳第二密封剂材料（801）的凹部（202,204）微电池。绝缘中心件（1401）与存在于第一硅衬底（1001）上的至少两个凹部（202,204）中的第一密封剂材料（1301）结合。通过使第二硅衬底（201）以榫眼和榫头的方式对准和叠加在第一硅衬底（1001）上并且使用高力密封两个衬底（1001,201）来形成互锁结构。

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