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1. 发明专利

JP2000286222A METHOD FOR REDUCING METAL CONTAMINATION ON SURFACE OF A SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JP2000286222A
公开(公告)日：2000-10-13
申请号：JP2000002644
申请日：2000-01-11
申请人： IMEC INTER UNI MICRO ELECTR , TEXAS INSTRUMENTS INC
发明人： MERTENS PAUL , LOEWENSTEIN LEE , VEREECKE GUY
IPC分类号： C11D7/06 , B08B7/04 , C11D7/08 , C11D7/10 , C11D7/18 , C11D7/26 , C11D17/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for improving metal elimination performance from a substrate without the need for sharply improving chemical purity, in a cleaning method of semiconductors. SOLUTION: This method uses a solution having a pH value of at least 5, capable of oxidizing the surface of a semiconductor substrate and containing a substance of at least 6% dissociating and ionizing in the solution, and the substrate is submitted to wet cleaning and/or rinsing process. A prescribed amount of ions of at least one kind of chemical species are created in the solution by dissociating and ionizing the substance. By these ions, the amount of metal ions bonded to the oxidized substrate surface is substantially reduced.

2. 发明申请

WO02101795A3 MEGASONIC CLEANER AND DRYER SYSTEM 审中-公开
标题翻译： MEGASONIC CLEANER和DRYER系统
公开(公告)号：WO02101795A3
公开(公告)日：2003-03-06
申请号：PCT/US0218761
申请日：2002-06-12
申请人： VERTEQ INC , IMEC INTER UNI MICRO ELECTR
发明人： LAUERHAAS JEFFREY M , NICOLOSI JR THOMAS J , MERTENS PAUL , FYEN WILLIAM
IPC分类号： B08B3/02 , B08B3/12 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： An apparatus for drying a generally flat substrate (114) that has been cleaned has a rotatable support (110) for supporting the substrate (114), a substrate drying assembly (120), and a controller (147). The substrate drying assembly (120) includes a substrate drying assembly support arm (130), an outlet for applying liquid to an upper surface of the substrate (114), and an outlet for applying a drying vapor to the upper surface of the substrate (114). The substrate drying assembly (120) is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate (114). The controller (147) causes the substrate drying assembly (120) to be retracted over the upper surface of the substrate (114) at a faster rate near a center of the substrate (114) than near a periphery of the substrate (114).
摘要翻译：用于干燥已经被清洁的大致平坦的基底（114）的装置具有用于支撑基底（114）的可旋转支撑件（110），基底干燥组件（120）和控制器（147）。衬底干燥组件（120）包括衬底干燥组件支撑臂（130），用于将液体施加到衬底（114）的上表面的出口和用于将干燥蒸气施加到衬底的上表面的出口 114）。衬底干燥组件（120）构造成定位液体施加出口并将蒸气施加出口定位在衬底（114）的一部分上方。控制器（147）使衬底干燥组件（120）在衬底（114）的中心附近以更靠近衬底（114）的周边的更快的速度在衬底（114）的上表面上缩回。

3. 发明申请

WO02051961A3 COMPOSITION COMPRISING AN OXIDIZING AND COMPLEXING COMPOUND 审中-公开
标题翻译：包含氧化和配合物的组合物
公开(公告)号：WO02051961A3
公开(公告)日：2002-10-17
申请号：PCT/BE0100219
申请日：2001-12-21
申请人： IMEC INTER UNI MICRO ELECTR , ASHLAND INC , VOS RITA , MERTENS PAUL , FESTER ALBRECHT , DOLL OLIVER , KOLBESEN BERND
发明人： VOS RITA , MERTENS PAUL , FESTER ALBRECHT , DOLL OLIVER , KOLBESEN BERND
IPC分类号： B08B3/08 , A61K6/00 , C01B15/037 , C09K3/00 , C09K15/30 , C11D3/28 , C11D3/39 , C11D3/395 , C11D11/00 , D06L3/02 , H01L21/304 , D21C9/08 , H01L21/306
CPC分类号： C01B15/037 , C09K15/30 , C11D3/28 , C11D3/3902 , C11D11/0047 , D06L4/12
摘要： The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.
摘要翻译：本发明涉及一种组合物，其包含氧化化合物和具有化学式的络合化合物，其中R 1，R 2，R 3和R 4选自H和任何有机侧链。氧化性化合物可以是水溶液的形式。配位化合物用于络合金属离子。金属离子可以存在于溶液中或与溶液接触的外部介质中。本发明可以用于清洁半导体衬底。

4. 发明专利

JPH11233481A METHOD AND APPARATUS FOR REMOVING A LIQUID FROM ROTATING SUBSTRATE SURFACE 失效
公开(公告)号：JPH11233481A
公开(公告)日：1999-08-27
申请号：JP30625698
申请日：1998-09-22
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , MEURIS MARK , HEYNS MARC
IPC分类号： F26B5/08 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To effectively remove a liquid from the upper surface of a substrate, by supplying a gaseous substance on the substrate surface which substance generates a mixture having a surface tension lower than that of the liquid when mixed with the liquid. SOLUTION: Nozzles 6 are so arranged that center lines of the nozzles 6 draw concentric circles on a surface, thereby forming curvature arranged at the center of a substrate 2, i.e., a liquid-vapor boundary on the upper surface of the substrate 2. When an arm 3 is moved from the central part to the peripheral part, the boundary is gradually induced to the outside, so that liquid or solution of the liquid is removed from the upper surface of the substrate 2. The liquid-vapor boundary is positioned between the nozzles 6 supplying the gaseous substance for decreasing the surface tension and the nearest nozzle 6 jetting the liquid. By using this method, fresh liquid is supplied to the liquid- vapor boundary, together with the gaseous substance of very low concentration which decreases surface tension. As a sew removal of the liquid is made maximum.

5. 发明专利

JP2000164475A SEMICONDUCTOR TREATMENT SYSTEM, METHOD AND DEVICE 失效
公开(公告)号：JP2000164475A
公开(公告)日：2000-06-16
申请号：JP21517599
申请日：1999-07-29
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MEURIS MARK , MERTENS PAUL , HEYNS MARC
IPC分类号： H01L21/02 , H01L21/00 , H01L21/68 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To optimize the manufacture of an integrated circuit by a method wherein individual substrate pieces are fixed on a support for applying to a heat treatment process at a temperature higher than a specified temperature, and after those substrate pieces are subjected to prescribed treatment, the substrate pieces are separated from each other. SOLUTION: A plurality of receiving spaces 9 are formed on a support or a skate holder 2, those spaces 9 are formed into oblique or slant holes and oblique or slant substrate pieces 1 are respectively arranged in the oblique or slant holes. After a prescribed treatment comprising a heat treatment process for forming an integrated circuit at a temperature of 450 deg.C or higher is performed to the substrate pieces 1, a layer 3 deposited on the rear of the holder 2 is removed by etching or a treatment similar to the etching and the individual substrate pieces 1 are separated from the holes formed in the spacers 9. As a result, the easily optimized integraed circuit can be manufactured.

6. 发明专利

AT332873T 未知
公开(公告)号：AT332873T
公开(公告)日：2006-08-15
申请号：AT01271916
申请日：2001-12-21
申请人： IMEC INTER UNI MICRO ELECTR , AIR PROD & CHEM
发明人： VOS RITA , MERTENS PAUL , FESTER ALBRECHT , DOLL OLIVER , KOLBESEN BERND
IPC分类号： B08B3/08 , A61K6/00 , C01B15/037 , C09K3/00 , C09K15/30 , C11D3/28 , C11D3/39 , C11D3/395 , C11D11/00 , D06L3/02 , H01L21/304 , H01L21/30 , D21C9/08
摘要： The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate

7. 发明专利

DE69832567D1 未知
公开(公告)号：DE69832567D1
公开(公告)日：2006-01-05
申请号：DE69832567
申请日：1998-09-22
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , MEURIS MARK , HEYNS MARC
IPC分类号： F26B5/08 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308

8. 发明专利

AT311665T 未知
公开(公告)号：AT311665T
公开(公告)日：2005-12-15
申请号：AT98870200
申请日：1998-09-22
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , MEURIS MARK , HEYNS MARC
IPC分类号： F26B5/08 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308

9. 发明专利

AT415646T 未知
公开(公告)号：AT415646T
公开(公告)日：2008-12-15
申请号：AT05447154
申请日：2005-06-30
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , FYEN WIM
IPC分类号： G03F7/20
摘要： A method and apparatus for immersion lithography is described. The method includes positioning a semiconductor substrate under an optical immersion head assembly, providing an immersion liquid between the substrate and the optical immersion head assembly, and supplying a tensio-active gaseous substance along the perimeter of the contact area of the immersion liquid and the substrate. The immersion liquid contacts at least an area of the substrate. The tensio-active gaseous substance is chosen such that, when at least partially mixed with the immersion liquid, the mixture has a lower surface tension than the immersion liquid, thereby creating a surface tension gradient pulling the immersion liquid from the perimeter towards the contact area.

10. 发明专利

DE60040386D1 未知
公开(公告)号：DE60040386D1
公开(公告)日：2008-11-13
申请号：DE60040386
申请日：2000-06-19
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , MEURIS MARC , HEYNS MARC
IPC分类号： H01L21/00

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