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1. 发明专利

DE3269356D1 METHOD OF METALLIZING SINTERED CERAMICS MATERIALS 未知
公开(公告)号：DE3269356D1
公开(公告)日：1986-04-03
申请号：DE3269356
申请日：1982-06-23
申请人： HITACHI LTD
发明人： MIYAZAKI KUNIO , OOKOSHI YUKIO , KUMAGAI AKIRA , SUZUKI HITOSHI
IPC分类号： C04B37/02 , B32B15/04 , B32B18/00 , C04B41/51 , C04B41/88

2. 发明专利

JPH08287421A MAGNETORESISTANCE EFFECT HEAD 失效
公开(公告)号：JPH08287421A
公开(公告)日：1996-11-01
申请号：JP8902195
申请日：1995-04-14
申请人： HITACHI LTD
发明人： WATANABE KATSURO , TADOKORO SHIGERU , KUMAGAI AKIRA
IPC分类号： G11B5/39
摘要： PURPOSE: To produce a magnetoresistance effect head having the element structure of magnetoresistance effect film/separation film/soft magnetic thin film and having no Barkhausen noise by controlling the saturation magnetostriction of the soft magnetic thin film to a specified range. CONSTITUTION: A soft magnetic thin film having the saturation magnetostriction ranging from zero to +25.0×10 is disposed near a magnetoresistance effect film so as to apply a lateral bias magnetic field on a MR head. Since a tensile stress generates in the height direction of the element by processing the surface facing a medium, magnetization in the soft magnetic thin film rotates enough in the height direction of the element when a sensing current is applied. Thereby, the lateral bias magnetic field is stabilized and the magnetoresistance effect head has no Barkhausen noise is obtained.

3. 发明专利

JPH0628083B2 失效
公开(公告)号：JPH0628083B2
公开(公告)日：1994-04-13
申请号：JP18516285
申请日：1985-08-23
申请人： HITACHI LTD
发明人： MITSUOKA KATSUYA , NARUSHIGE SHINJI , SANO MASAAKI , SATO MITSUO , KUMAGAI AKIRA , HANAZONO MASANOBU , HARA SHINICHI
IPC分类号： G11B5/31

4. 发明专利

JPH0426227B2 失效
公开(公告)号：JPH0426227B2
公开(公告)日：1992-05-06
申请号：JP17123283
申请日：1983-09-19
申请人： HITACHI LTD
发明人： NARUSHIGE SHINJI , KUMAGAI AKIRA , MITSUOKA KATSUYA
IPC分类号： C22C19/03 , G11B5/39 , H01F10/08 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10

5. 发明专利

JPS6411397B2 失效
公开(公告)号：JPS6411397B2
公开(公告)日：1989-02-23
申请号：JP15391880
申请日：1980-11-04
申请人： HITACHI LTD
发明人： MYAZAKI KUNIO , KUMAGAI AKIRA , TAMAMURA TATEO , OOGOSHI YUKIO , SUZUKI HITOSHI
IPC分类号： B23K20/00 , B23K1/00

6. 发明专利

JPS644908A MULTI-LAYERED THIN FILM MAGNETIC HEAD 失效
公开(公告)号：JPS644908A
公开(公告)日：1989-01-10
申请号：JP15772187
申请日：1987-06-26
申请人： HITACHI LTD
发明人： MITSUOKA KATSUYA , SUDO SHUJI , SANO MASAAKI , IMAGAWA TAKAO , KUMAGAI AKIRA , NARUSHIGE SHINJI , HANAZONO MASANOBU , FUKUI HIROSHI , SUGITA KEN , KOBAYASHI TETSUO
IPC分类号： G11B5/147 , G11B5/31
摘要： PURPOSE:To provide stable recording and reproducing characteristics and high reading-out output by controlling the magnetic domain structure in the magnetic core shape of a thin film magnetic head. CONSTITUTION:This magnetic head is formed by laminating nonmagnetic films and magnetic films constituting multi-layered films at >=4X10 and ratios of the thicknesses of said films. The multi-layered films consist of the two layers interposed with one layer of the nonmagnetic film between the magnetic films. A conductor coil 54 is formed in part on a magnetic gap material 53 and further, an insulating film 55 consisting of an org. resin is formed to cover the conductor coil 54 with said film and the magnetic gap material 53. The inter-layer bond is intensified by using the two-layered films to the magnetic cores 52, 56. The head efficiency is thus more improved than in the case of using the single-layered films for the magnetic cores 52, 56.

7. 发明专利

JPS62145785A MAGNETORESISTANCE EFFECT ELEMENT 失效
公开(公告)号：JPS62145785A
公开(公告)日：1987-06-29
申请号：JP28555585
申请日：1985-12-20
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： MITSUOKA KATSUYA , KUMAGAI AKIRA , SATO MITSUO , NARUSHIGE SHINJI , HANAZONO MASANOBU , SAKAKIBARA MASAHIKO
IPC分类号： H01L43/08
摘要： PURPOSE:To obtain a high output magnetoresistance effect element by providing a high magnetic permeability magnetic film on the surface of a nonmagnetic insulating layer covered with a thin ferromagnetic film stripe, and making the length from the end of the magnetic film in a magnetic field detecting direction to the end shorter than that of the recording bit of a magnetic medium. CONSTITUTION:A thin ferromagnetic film stripe 1 is formed on a substrate 6, and a high magnetic permeability magnetic film 2 is covered with a protecting layer 7. The width of the stripe in a magnetic field detecting direction is indicated by 'x', and the length from the end of the magnetic film disposed at both sides of the stripe to the end is designated by W. The W is made shorter than the length of a recording bit. A nonmagnetic insulating layer 3 is provided between the stripe 1 and the film 2. According to the structure, a reverse magnetic field in the stripe 1 can be reduced by the magnetic film adjacent to the stripe 1 to enhance the detecting sensitivity for a magnetic field to be detected applied to the lateral direction of the stripe 1.

8. 发明专利

JPS62119907A SPUTTERING DEVICE FOR FORMATION OF MAGNETIC THIN FILM 失效
公开(公告)号：JPS62119907A
公开(公告)日：1987-06-01
申请号：JP25855285
申请日：1985-11-20
申请人： HITACHI LTD
发明人： KOZONO YUZO , MITSUOKA KATSUYA , IMAGAWA TAKAO , SATO MITSUO , KUMAGAI AKIRA , SANO MASAAKI , SATO TADASHI , HARA SHINICHI , NARUSHIGE SHINJI , HANAZONO MASANOBU , SETOYAMA HIDETSUGU , ARIMATSU KEIJI , KOBAYASHI TETSUO
IPC分类号： H01F41/14 , C23C14/34 , C23C14/35 , C23C14/36 , H01F41/18 , H01J37/34
摘要： PURPOSE:To enable the uniform magnetic characteristics of a magnetic film by forming the magnetic film of which the film ratio of inclined planes and flat parts is 0.75 or more on a substrate having a plurality of high step parts and flat parts by determining the angle made by the substrate surface with the line connecting an erosion area of a target and the edge of the substrate which is nearest to said area 55 deg. or under. CONSTITUTION:An upper magnetic film 5 is formed on the magnetic core for a thin film magnetic head in which a lower magnetic member 2, a conductive coil 3, and an insulator 4 are arranged on a substrate 1. At the same time, a magnetic film 5 is formed on the substrate on which hundreds of such elements are formed. A magnetron magnet 7 is put under a target 6 and the substrate 1 is arranged oppositely to an erosion area 8 of the target. The angle thetamade by the substrate surface with the line connecting said erosion area 8 and the edge of the substrate 1 which is nearest the area 8 is determined as theta

9. 发明专利

JPS5923219A Rotation angle detecting meter 失效
标题翻译：旋转角检测仪
公开(公告)号：JPS5923219A
公开(公告)日：1984-02-06
申请号：JP13222382
申请日：1982-07-30
申请人： Hitachi Ltd
发明人： NARUSHIGE SHINJI , KUMAGAI AKIRA , SANO MASAAKI , SATOU MITSUO
IPC分类号： G01D5/18 , G01B7/00 , G01D5/14 , G01D5/16 , G01D5/245
CPC分类号： G01D5/145
摘要： PURPOSE:To lighten a magneto-resistance veriation against a variation of a fitting angle of a detecting elemnt, by setting the thickness of a magneto-resistance effect thin film which forms a magneto-resistance variation detecting element for detecting a magnetic field variation corresponding to a rotation angle, to a prescribed value or above. CONSTITUTION:A ring-like magnetized pattern 3 consisting of a minute magnet group is formed on the surface of a disk 2 of a rotating body to be detected, and a magnetic field received by a detecting element 4 of a magneto-resistance effect thin film opposed in the vicinity of the pattern is varied in accordance with a rotation angle of the rotating body. Subsequently, electric resistance of the magneto-resistance effect thin film is varied and the rotation angle is measured electrically. When thickness of this magneto-resistance effect is set to 0.3mu or more, a difference between the maximum value and the minimum value of a magneto-resistance variation of the element 4, which is based on an angle made by an axis of difficult magnetization of the element 4 and the magnetic field is reduced suddenly, and simultaneously, the hysteresis characteristics becomes symmetrical. Accordingly, a magneto-resistnce variation against a variation of a fitting angle of a detecting element can be lightened, an assembly allowable range of a rotation angle detecting meter can be expanded, and also the detecting sensitivity and accuracy are improved.
摘要翻译：目的：通过设置形成磁阻变化检测元件的磁阻效应薄膜的厚度来防止检测元件的拟合角度变化的磁阻检测，用于检测对应于旋转角度达到规定值以上。构成：在被检体旋转体的盘2的表面形成由微小磁体组成的环状磁化图案3，由检测元件4接收的磁阻效应薄膜根据旋转体的旋转角度，在图案附近相对的方向变化。随后，磁阻效应薄膜的电阻变化并且电气测量旋转角度。当该磁阻效应的厚度设定为0.3μm以上时，元件4的磁阻变化的最大值和最小值之间的差异是基于由难磁化轴构成的角度并且磁场突然减小，同时滞后特性变得对称。因此，可以减轻针对检测元件的拟合角度的变化的磁阻变化，可以扩大旋转角度检测计的组合允许范围，并且提高检测灵敏度和精度。

10. 发明专利

JPS5781980A Method of joining utilizing eutectic reaction 失效
标题翻译：联合使用保护反应的方法
公开(公告)号：JPS5781980A
公开(公告)日：1982-05-22
申请号：JP15729380
申请日：1980-11-08
申请人： Hitachi Ltd
发明人： MIYAZAKI KUNIO , TAMAMURA TATEO , KUMAGAI AKIRA , OOGOSHI YUKIO , SUZUKI HITOSHI
IPC分类号： B23K20/00 , B23K20/14
摘要： PURPOSE: To obtain a joined part free from generation of voids by heating the surfaces to be joined of ≥2 base materials at above their eutectic temp. in an atmosphere contg. a large amt. of O
2 thereby forming a melt phase and an oxide phase on the contact surfaces of the base materials.
CONSTITUTION: Two or more base materials, for example, Al and Cu are placed in an atmosphere contg. O
2 of an amt. larger than that in the atmospheric air, more particularly, an atmosphere consisting substantially of pure oxygen. Next, with the O
2 held introduced into the contact faces of the base materials, the base materials are heated to the temp. range above the eutectic temp. thereof and at which the base materials do not melt. As a result, the O
2 intruded into the clearances of the base materials and the components in the base materials are caused to reacted so that the oxide phase formed thereby is diffused into the melt produced by eutectic reaction. Therefore, the remaining of the O
2 intruded in the clearances of the base materials as voids in the joined part is prevented. Here, said melt phase may be expelled from the contact faces by pressurizing the base materials or may be left as it is on the contact faces without being expelled.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过在高于其共晶温度的情况下加热> = 2基体材料的接合表面，获得不产生空隙的接合部分。在气氛中一个大的的O 2，从而在基材的接触表面上形成熔融相和氧化物相。构成：将两种或更多种基材，例如Al和Cu放置在气氛中。 O2的一个。大于大气中的气氛，更特别地，基本上由纯氧组成的气氛。接着，将O2保持在基材的接触面上，将基材加热至温度。范围在共晶温度以上。并且基材不熔化。结果，引入基底材料的间隙和基材中的组分的O 2反应，使得由此形成的氧化物相扩散到由共晶反应产生的熔体中。因此，防止了在接合部分中作为空隙的基体材料的间隙中的残留物。这里，所述熔融相可以通过对基材加压而从接触面排出，或者可以将其保持在接触面上而不被排出。

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