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1. 发明授权

US5441926A Superconducting device structure with Pr-Ba-Cu-O barrier layer 失效
标题翻译：具有Pr-Ba-Cu-O势垒层的超导器件结构
公开(公告)号：US5441926A
公开(公告)日：1995-08-15
申请号：US151024
申请日：1993-11-12
申请人： Hiroshi Kimura , Toshiyuki Matsui , Takeshi Suzuki , Kazuo Mukae , Akihiko Ohi
发明人： Hiroshi Kimura , Toshiyuki Matsui , Takeshi Suzuki , Kazuo Mukae , Akihiko Ohi
IPC分类号： H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/228
摘要： A superconducting transistor having a source region and a drain region are formed by a YBCO film on a barrier layer, which is composed of a PBCO film formed on an STO substrate. A gate electrode is disposed on the thinner wall at the back of the STO substrate. In a superconducting transistor so constructed the electric field created by the gate voltage works effectively at an interface with the barrier layer, more carriers can be drawn out relative to the applied gate voltage, and it becomes possible for a large superconduction current to flow.
摘要翻译：具有源极区和漏极区的超导晶体管由阻挡层上的YBCO膜形成，该阻挡层由在STO衬底上形成的PBCO膜构成。栅电极设置在STO衬底背面的较薄壁上。在如此构造的超导晶体管中，由栅极电压产生的电场在与势垒层的界面处有效地工作，可以相对于施加的栅极电压引出更多的载流子，并且可以使大的超导电流流动。

2. 发明授权

US5422336A Superconducting FET with Pr-Ba-Cu-O channel 失效
标题翻译：具有Pr-Ba-Cu-O通道的超导FET
公开(公告)号：US5422336A
公开(公告)日：1995-06-06
申请号：US124788
申请日：1993-09-22
申请人： Koichi Tsuda , Toshiyuki Matsui , Takeshi Suzuki , Hiroshi Kimura , Takashi Ishii , Akihiko Ohi , Kazuo Mukae
发明人： Koichi Tsuda , Toshiyuki Matsui , Takeshi Suzuki , Hiroshi Kimura , Takashi Ishii , Akihiko Ohi , Kazuo Mukae
IPC分类号： H01L39/22 , H01L39/14 , B05D5/12 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/779
摘要： A superconducting transistor with superior withstand voltage having source region and a drain region formed of oxide superconductors 3, a PrBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 or an ScBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 forming an intermediate region sandwiched by the source and drain regions. The regions are disposed on a substrate 1. An insulation layer 4 is disposed on the intermediate region. A transistor uses the intermediate region as an insulator when the gate is turned off, and as a superconductor when the gate is turned on.
摘要翻译：具有优异的耐电压的超导晶体管具有源极区和由氧化物超导体3，PrBa2Cu3O7-x层2或ScBa2Cu3O7-x层2形成的漏极区，形成由源极和漏极区夹持的中间区。这些区域设置在基板1上。绝缘层4设置在中间区域上。当栅极截止时，晶体管使用中间区域作为绝缘体，并且当栅极导通时，作为超导体使用。

3. 发明授权

US09969041B2 Deformable thin object spreading device and method 有权
公开(公告)号：US09969041B2
公开(公告)日：2018-05-15
申请号：US13991066
申请日：2011-11-30
申请人： Yoshimasa Endo , Hiroshi Kitagawa , Hiroshi Kimura
发明人： Yoshimasa Endo , Hiroshi Kitagawa , Hiroshi Kimura
IPC分类号： D06F73/00 , B25J13/00 , B23Q3/18 , D06F67/04 , B25J9/02 , B25J15/02 , B25J9/16
CPC分类号： B23Q3/18 , B25J9/026 , B25J9/1679 , B25J15/0253 , D06F67/04 , G05B2219/39469 , G05B2219/39571 , G05B2219/40011 , G05B2219/40044 , Y10T29/49998
摘要： A deformable thin object spreading device and method are disclosed. The device includes a control part configured to: control a clamping unit and a moving mechanism to cause the clamping unit to clamp a first point of a deformable thin object; cause an endpoint detecting part to detect a first endpoint; control the clamping unit and the moving mechanism to cause the clamping unit to clamp the first endpoint; cause the endpoint detecting part to detect a second endpoint; control the clamping unit and the moving mechanism to cause the clamping unit to clamp both of the first endpoint and the second endpoint; cause the endpoint detecting part to detect a third endpoint; and control the clamping unit and the moving mechanism to cause the clamping unit to clamp both of the first endpoint or the second endpoint and the third endpoint of the deformable thin object.

4. 发明授权

US09492842B2 Cell culture membrane, cell culture substrate, and method for manufacturing cell culture substrate 有权
标题翻译：细胞培养膜，细胞培养基质和细胞培养基质的制造方法
公开(公告)号：US09492842B2
公开(公告)日：2016-11-15
申请号：US14128089
申请日：2012-06-22
申请人： Yasuo Yoshimoto , Kentaro Kamimae , Yuki Tanabe , Taku Oguni , Takashi Inoue , Tsutomu Mochizuki , Makoto Hirama , Teruo Fujii , Hiroshi Kimura , Hideto Tozawa
发明人： Yasuo Yoshimoto , Kentaro Kamimae , Yuki Tanabe , Taku Oguni , Takashi Inoue , Tsutomu Mochizuki , Makoto Hirama , Teruo Fujii , Hiroshi Kimura , Hideto Tozawa
IPC分类号： B05D1/00 , C12M1/12 , C12N5/00 , C12M1/00
CPC分类号： B05D1/60 , C12M23/20 , C12M25/02 , C12N5/0068 , C12N2533/30
摘要： Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 μm (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).

5. 发明申请

US20140028416A1 Low-Voltage Active Inductor 有权
标题翻译：低电压有源电感
公开(公告)号：US20140028416A1
公开(公告)日：2014-01-30
申请号：US13560893
申请日：2012-07-27
申请人： Hiroshi Kimura , Ram Surya Narayan , Ashutosh K. Sinha
发明人： Hiroshi Kimura , Ram Surya Narayan , Ashutosh K. Sinha
IPC分类号： H03H11/04
CPC分类号： H03H11/48
摘要： An active inductor circuit includes a field-effect transistor having a first source/drain adapted for connection with a first voltage source, a capacitor coupled between the first voltage source and a gate of the field-effect transistor, a resistor coupled between a second source/drain of the field-effect transistor and the gate of the field-effect transistor, and a current source coupled with the gate of the field-effect transistor. A voltage headroom of the active inductor circuit is controlled as a function of at least one of a magnitude of current generated by the current source and a resistance of the resistor.
摘要翻译：有源电感器电路包括具有适于与第一电压源连接的第一源极/漏极的场效应晶体管，耦合在第一电压源和场效应晶体管的栅极之间的电容器，耦合在第二源极场效应晶体管的漏极和场效应晶体管的栅极，以及与场效应晶体管的栅极耦合的电流源。有源电感器电路的电压余量被控制为电流源产生的电流的大小和电阻器的电阻中的至少一个的函数。

6. 发明申请

US20130230093A1 SHIFT REGISTER BASED DOWNSAMPLED FLOATING TAP DECISION FEEDBACK EQUALIZATION 有权
标题翻译：基于移位寄存器的浮动平移决策反馈均衡
公开(公告)号：US20130230093A1
公开(公告)日：2013-09-05
申请号：US13540923
申请日：2012-07-03
申请人： Pervez M. Aziz , Hiroshi Kimura , Amaresh V. Malipatil , Hairong Gao
发明人： Pervez M. Aziz , Hiroshi Kimura , Amaresh V. Malipatil , Hairong Gao
IPC分类号： H04L27/01
CPC分类号： H04L25/14 , H04L25/03057 , H04L25/03885 , H04L2025/0349 , H04L2025/03579
摘要： Described embodiments receive a signal by a set of fixed taps and a set of floating taps of a receiver, each tap corresponding to a detected symbol. Each of the floating taps is stored in a corresponding shift register to account for process, operating voltage and temperature (PVT) variations of the receiver without calibration of delay elements. Multiplexing logic selects (i) corresponding floating taps for equalization by coupling selected floating taps to the outputs of the fixed taps, and (ii) different phases of each possible floating tap position. The multiplexing logic prunes and/or amalgamates the phases of each possible floating tap position and selects floating taps based on a magnitude of each phase. A combiner adjusts each output value of the fixed taps and the selected floating taps by a corresponding tap-weight, combines the adjusted values into an output signal and subtracts the output signal from the input signal.
摘要翻译：描述的实施例通过一组固定抽头和接收器的一组浮动抽头接收信号，每个抽头对应于检测到的符号。每个浮动抽头存储在相应的移位寄存器中，以解决接收器的过程，工作电压和温度（PVT）变化，而不校准延迟元件。多路复用逻辑通过将选定的浮动抽头耦合到固定抽头的输出端，选择（i）相应的浮动抽头进行均衡，以及（ii）每个可能的浮动抽头位置的不同相位。多路复用逻辑修剪和/或合并每个可能的浮动抽头位置的相位，并且基于每相的幅度选择浮动抽头。组合器通过相应的抽头调整固定抽头和所选浮动抽头的每个输出值，将调整后的值组合成输出信号，并从输入信号中减去输出信号。

7. 发明授权

US08188903B2 Ramp wave output circuit, analog/digital conversion circuit, and camera 有权
标题翻译：斜坡波输出电路，模拟/数字转换电路和摄像机
公开(公告)号：US08188903B2
公开(公告)日：2012-05-29
申请号：US12810272
申请日：2008-11-25
申请人： Yuusuke Yamaoka , Hiroshi Kimura , Masahiro Higuchi
发明人： Yuusuke Yamaoka , Hiroshi Kimura , Masahiro Higuchi
IPC分类号： H03M1/56
CPC分类号： H03K4/08 , H03K5/082 , H03K2005/00293
摘要： A ramp wave output circuit includes a ramp wave generation circuit generating a ramp wave, and a low-pass filter having a variable cutoff frequency, which receives the ramp wave. The low-pass filter operates at a first cutoff frequency for a predetermined time period after the receipt of the ramp wave, and at a second cutoff frequency, which is larger than the first cutoff frequency, after the predetermined time period has passed.
摘要翻译：斜坡波输出电路包括产生斜坡波的斜坡波生成电路和接收斜坡波的具有可变截止频率的低通滤波器。低通滤波器在接收到斜波之后的预定时间段内以第一截止频率操作，并且在经过预定时间段之后，在大于第一截止频率的第二截止频率下操作。

8. 发明授权

US08124228B2 Carbon fiber strand and process for producing the same 有权
标题翻译：碳纤维束及其制造方法
公开(公告)号：US08124228B2
公开(公告)日：2012-02-28
申请号：US12740011
申请日：2008-08-27
申请人： Hidekazu Yoshikawa , Taro Oyama , Hiroshi Kimura
发明人： Hidekazu Yoshikawa , Taro Oyama , Hiroshi Kimura
IPC分类号： D02G3/00
CPC分类号： D01F9/225 , D02J1/08 , D02J1/222 , Y10T428/2918
摘要： A carbon fiber strand which is produced by obtaining a solidified-yarn strand by spinning with a spinneret having 20,000-30,000 spinning holes, passing the strand through an interlacing nozzle having an air blowing pressure of 20-60 kPa to obtain precursor fibers, oxidizing them in heated air having a temperature of 200-280° C. to obtain oxidized fibers, subjecting these oxidized fibers to a first carbonization treatment in an inert-gas atmosphere at a temperature of 300-900° C. in which the fibers are firstly stretched in a stretch ratio of 1.03-1.06 and then secondarily stretched in a stretch ratio of 0.9-1.01, subsequently conducting a second carbonization treatment in an inert-gas atmosphere at 1,360-2,100° C., and then conducting a surface oxidization treatment in an aqueous solution of an inorganic acid salt in a quantity of electricity of 20-100 C per g of the carbon fibers. This carbon fiber strand has a strand tensile strength of 5,650 MPa or higher, strand tensile modulus of 300 GPa or higher, and strand width of 5.5 mm or larger. No strand crack is observed in an examination by a strand crack evaluation method.
摘要翻译：一种碳纤维股线，其通过用具有20,000-30,000个纺丝孔的喷丝头纺丝获得固化纱股线，使股线通过空气吹送压力为20-60kPa的交织喷嘴，从而获得前体纤维，氧化它们在温度为200-280℃的加热空气中，获得氧化纤维，在惰性气体气氛中在300-900℃的温度下对这些氧化纤维进行第一次碳化处理，其中纤维首先被拉伸在1.03-1.06的拉伸比下，然后以0.9-1.01的拉伸比进行二次拉伸，随后在惰性气体气氛中在1360-2100℃下进行第二次碳化处理，然后进行表面氧化处理无机酸盐水溶液，每克碳纤维的电量为20-100℃。该碳纤维股线的线股抗拉强度为5,650MPa以上，线股拉伸弹性模量为300GPa以上，股线宽度为5.5mm以上。在线裂纹评估方法的检查中未观察到股线裂纹。

9. 发明授权

US08110048B2 Magnetic powder suitable for low-noise media 失效
标题翻译：磁粉适用于低噪音介质
公开(公告)号：US08110048B2
公开(公告)日：2012-02-07
申请号：US12986198
申请日：2011-01-07
申请人： Kenji Masada , Yuzo Ishikawa , Hiroshi Kimura
发明人： Kenji Masada , Yuzo Ishikawa , Hiroshi Kimura
IPC分类号： C23C8/24 , B22F1/00
CPC分类号： H01F1/065 , G11B5/70615 , G11B5/70626 , G11B5/714
摘要： A method for producing a magnetic powder comprised chiefly of Fe16N2 comprising providing a starting powder comprising an oxy-hydroxide or oxide of iron and an amount of noble metal. The starting powder is reduced into an iron powder by a dry method using a hydrogen gas; and the iron powder is nitrided into a magnetic powder comprised chiefly of Fe16N2 particles using a nitrogen-containing gas at a temperature not higher than 200° C. The amount of noble metal is such that an amount that the atomic percent ratio of the noble metal content to Fe in the magnetic powder is 0.01-10.
摘要翻译：一种主要由Fe16N2构成的磁性粉末的制造方法，其特征在于，提供包含氧化氢，氧化铁和一定数量的贵金属的起始粉末。起始粉末通过使用氢气的干法还原成铁粉末; 并使用含氮气体在不高于200℃的温度将铁粉浸入主要由Fe16N2颗粒构成的磁性粉末中。贵金属的量使得贵金属的原子百分比比磁粉中Fe含量为0.01-10。

10. 发明申请

US20110062547A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110062547A1
公开(公告)日：2011-03-17
申请号：US12882863
申请日：2010-09-15
申请人： Kazuma ONISHI , Yoshitaka Otsu , Hiroshi Kimura , Tetsuya Nitta , Shinichiro Yanagi , Katsumi Morii
发明人： Kazuma ONISHI , Yoshitaka Otsu , Hiroshi Kimura , Tetsuya Nitta , Shinichiro Yanagi , Katsumi Morii
IPC分类号： H01L29/02 , H01L21/76
CPC分类号： H01L29/0649 , H01L21/764 , H01L21/823807 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L27/11521 , H01L27/11526 , H01L29/0653 , H01L29/0878 , H01L29/1083 , H01L29/1087 , H01L29/456 , H01L29/4933 , H01L29/66689 , H01L29/7816 , H01L29/7835
摘要： A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.
摘要翻译：一种半导体器件，其通过简单的工艺消除了对高填充性的需要及其制造方法。在半导体衬底的表面上完成包括源极区和漏极区的高击穿电压横向MOS晶体管。在半导体衬底的表面中制造在平面图中观察时围绕晶体管的沟槽。在晶体管和沟槽中形成绝缘膜，以覆盖晶体管并在沟槽中形成气隙空间。到达晶体管的源极区域和漏极区域的接触孔分别制成层间绝缘膜。

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