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1. 发明授权

US08436791B2 Light-emitting device and mobility compensating method for driving the same, and electronic device 有权
标题翻译：用于驱动它们的发光装置和移动性补偿方法以及电子装置
公开(公告)号：US08436791B2
公开(公告)日：2013-05-07
申请号：US12690267
申请日：2010-01-20
申请人： Hitoshi Ota , Satoshi Yatabe , Hideto Ishiguro
发明人： Hitoshi Ota , Satoshi Yatabe , Hideto Ishiguro
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0256 , G09G2320/043
摘要： A light-emitting device includes a light-emitting element that emits light of an amount based on the size of a driving current; a driving transistor, the gate thereof being electrically connected to a first node, that outputs a current flowing between the drain-source as the driving current; and a control unit that supplies a first data potential to the first node and supplies a current to the driving transistor so as to set the voltage between the gate and source of the driving transistor to a compensated voltage based on the mobility of the driving transistor, and then supplies a second data potential determined in accordance with the first data potential to the first node.
摘要翻译：发光装置包括基于驱动电流的大小发光量的发光元件; 驱动晶体管，其栅极电连接到第一节点，其输出在所述漏源之间流动的电流作为所述驱动电流; 以及控制单元，其向第一节点提供第一数据电位，并且向驱动晶体管提供电流，以便基于驱动晶体管的迁移率将驱动晶体管的栅极和源极之间的电压设置为补偿电压，然后将根据第一数据电位确定的第二数据电位提供给第一节点。

2. 发明授权

US06306693B1 Method of manufacturing semiconductor device, method of manufacturing active matrix substrate, and electrooptic device 有权
标题翻译：制造半导体器件的方法，制造有源矩阵衬底的方法和电光器件
公开(公告)号：US06306693B1
公开(公告)日：2001-10-23
申请号：US09657901
申请日：2000-09-08
申请人： Hideto Ishiguro , Minoru Matsuo , Hiroyuki Murai , Masami Hayashi
发明人： Hideto Ishiguro , Minoru Matsuo , Hiroyuki Murai , Masami Hayashi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.
摘要翻译：为了提供一种制造半导体器件的方法，制造有源矩阵衬底的方法和电光器件，其中在同一衬底上形成不同类型的TFT时，TFT的LDD长度或偏移长度的变化可以通过少数步骤。在制造有源矩阵基板的方法中，留下用于形成栅电极15和25的图形掩模554，用于引入中等浓度的磷离子以引入与图案化掩模554自对准的杂质。接下来，去除图案化掩模554，通过使用栅电极15和25作为掩模来引入低浓度的磷离子，以形成与栅电极15自对准的低浓度源极 - 漏极区域111,121,211和221，以及每个区域的LDD长度等于在图案化栅电极15和25时引起的侧蚀刻量。

3. 发明授权

US08599222B2 Method of driving pixel circuit, light emitting device, and electronic apparatus 有权
标题翻译：驱动像素电路，发光器件和电子设备的方法
公开(公告)号：US08599222B2
公开(公告)日：2013-12-03
申请号：US12544563
申请日：2009-08-20
申请人： Hideto Ishiguro , Satoshi Yatabe
发明人： Hideto Ishiguro , Satoshi Yatabe
IPC分类号： G09G5/10
CPC分类号： G09G3/30 , G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0866 , G09G2310/0262 , G09G2320/043 , G09G2320/045
摘要： There is provided a method of driving a pixel circuit that includes a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is interposed between a path, which is formed between the light emitting element and the driving transistor, and a gate of the driving transistor; a selection switch that is interposed between the gate of the driving transistor and a signal line; and a first control switch that is interposed between the gate of the driving transistor and the signal line and is connected to the selection switch in series.
摘要翻译：提供了一种驱动包括发光元件的像素电路的方法; 与发光元件串联连接的驱动晶体管; 存储电容器，其设置在形成在所述发光元件和所述驱动晶体管之间的路径与所述驱动晶体管的栅极之间; 插入驱动晶体管的栅极和信号线之间的选择开关; 以及插入在驱动晶体管的栅极和信号线之间并串联连接到选择开关的第一控制开关。

4. 发明授权

US08456391B2 Pixel circuit driving method, light emitting device, and electronic apparatus including a variable driving signal 有权
标题翻译：像素电路驱动方法，发光装置和包括可变驱动信号的电子设备
公开(公告)号：US08456391B2
公开(公告)日：2013-06-04
申请号：US12545479
申请日：2009-08-21
申请人： Satoshi Yatabe , Hideto Ishiguro
发明人： Satoshi Yatabe , Hideto Ishiguro
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0814 , G09G2300/0819 , G09G2300/0852 , G09G2310/066
摘要： Provided is a method of driving a pixel circuit including a light emitting element and a driving transistor which are connected in series, and a storage capacitor disposed between the path between the light emitting element and the driving transistor and the gate of the driving transistor, the method including the steps of: supplying a driving signal, of which the time rate of change of the potential varies over time, to a gate of the driving transistor; stopping the supply of the driving signal at a point in time which is set to be variable in accordance with a gradation specified for the pixel circuit; and supplying a driving current corresponding to an open circuit voltage of the storage capacitor to the light emitting element.
摘要翻译：提供了一种驱动包括串联连接的发光元件和驱动晶体管的像素电路的方法，以及设置在发光元件和驱动晶体管之间的路径与驱动晶体管的栅极之间的存储电容器，方法包括以下步骤：将电位变化的时间变化率随时间变化的驱动信号提供给驱动晶体管的栅极; 停止在根据针对像素电路指定的灰度被设定为可变的时间点的驱动信号的供应; 并向所述发光元件提供与所述存储电容器的开路电压相对应的驱动电流。

5. 发明授权

US08362986B2 Light emitting apparatus, method for driving light emitting apparatus and electronic apparatus 有权
标题翻译：发光装置，用于驱动发光装置的方法和电子装置
公开(公告)号：US08362986B2
公开(公告)日：2013-01-29
申请号：US12783097
申请日：2010-05-19
申请人： Hideto Ishiguro , Satoshi Yatabe
发明人： Hideto Ishiguro , Satoshi Yatabe
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , G09G2310/066 , G09G2320/043 , G09G2320/045
摘要： A light emitting apparatus includes a pixel circuit, and a drive circuit which drives the pixel circuit. The pixel circuit has a light emitting device, a driving transistor connected in series to the light emitting device, a capacitive element arranged between a gate and a source of the driving transistor, a first switching device arranged between the gate of the driving transistor and a signal line corresponding to the pixel circuit, and a second switching device arranged between the source of the driving transistor and a reset line.
摘要翻译：发光装置包括像素电路和驱动像素电路的驱动电路。像素电路具有发光器件，与发光器件串联的驱动晶体管，布置在驱动晶体管的栅极和源极之间的电容元件，布置在驱动晶体管的栅极和第一开关器件之间的第一开关器件，信号线，以及布置在驱动晶体管的源极和复位线之间的第二开关器件。

6. 发明授权

US08310416B2 Method of driving pixel circuit, light-emitting apparatus, and electronic apparatus 有权
标题翻译：驱动像素电路，发光装置和电子设备的方法
公开(公告)号：US08310416B2
公开(公告)日：2012-11-13
申请号：US12499485
申请日：2009-07-08
申请人： Satoshi Yatabe , Hideto Ishiguro
发明人： Satoshi Yatabe , Hideto Ishiguro
IPC分类号： G09G3/30 , G09G5/00 , G06F3/038
CPC分类号： G09G3/3233 , G09G2300/043 , G09G2300/0819 , G09G2300/0852 , G09G2320/043
摘要： There is provided a method of driving a pixel circuit. The method includes: performing a compensating operation of asymptotically causing the voltage across the storage capacitance to converge with a voltage corresponding to a threshold voltage of the driving transistor by applying a first reference voltage to the gate of the driving transistor, over a time duration variably set according to a gradation value designated to the pixel circuit, in a compensating period after the elapse of the resetting period; changing the voltage across the storage capacitance from a voltage set by the compensating operation to a voltage corresponding to the gradation value by applying a gradation voltage corresponding to the gradation value from a signal line to the gate of the driving transistor, in a writing period after the elapse of the compensating period.
摘要翻译：提供了驱动像素电路的方法。该方法包括：通过在可变的时间段上施加第一参考电压到驱动晶体管的栅极，执行渐近地使存储电容两端的电压与对应于驱动晶体管的阈值电压的电压收敛的补偿操作在经过复位周期后的补偿期间，根据指定给像素电路的灰度值进行设定; 将存储电容的电压从通过补偿操作设定的电压改变为对应于灰度值的电压，通过在写入周期之后的写入周期中将与来自信号线的灰度值相对应的灰度电压施加到驱动晶体管的栅极经过补偿期。

7. 发明授权

US08089476B2 Liquid crystal device 有权
标题翻译：液晶装置
公开(公告)号：US08089476B2
公开(公告)日：2012-01-03
申请号：US12180092
申请日：2008-07-25
申请人： Hideto Ishiguro , Eiji Kanda , Hitoshi Ota
发明人： Hideto Ishiguro , Eiji Kanda , Hitoshi Ota
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G02F1/13338 , G02F2001/13312 , G06F3/042 , G09G3/3648 , G09G2300/0465 , G09G2360/148
摘要： A liquid crystal device includes a plurality of selection lines, a plurality of signal lines, a plurality of pixel portions, a plurality of photosensor portions, a plurality of first power lines, and a plurality of sense lines. The plurality of selection lines are provided in a line direction. The plurality of signal lines are provided in a column direction. The plurality of pixel portions are provided at positions corresponding to intersections of the selection lines and the signal lines. The plurality of photosensor portions are provided in correspondence with a portion of the plurality of pixel portions. The plurality of first power lines are provided in the line direction. The plurality of sense lines are provided in the column direction. Each of the plurality of pixel portions includes a first switching element and a liquid crystal.
摘要翻译：液晶装置包括多条选择线，多条信号线，多个像素部分，多个光电传感器部分，多个第一电力线以及多条感测线。沿线方向设置多条选择线。多个信号线沿列方向设置。多个像素部分设置在与选择线和信号线的交点对应的位置。多个光传感器部分与多个像素部分的一部分相对应地设置。沿线方向设置多个第一电力线。在列方向上设置多条检测线。多个像素部分中的每一个包括第一开关元件和液晶。

8. 发明授权

US07863809B2 Light-emitting device and method of manufacturing light-emitting device 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07863809B2
公开(公告)日：2011-01-04
申请号：US11466668
申请日：2006-08-23
申请人： Hiroshi Sera , Hideto Ishiguro
发明人： Hiroshi Sera , Hideto Ishiguro
IPC分类号： H01L51/40 , H05B33/10
CPC分类号： H01L51/524 , H01L27/3276 , H01L27/3288 , H01L51/0017 , H01L51/5203 , H01L51/5231
摘要： A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.
摘要翻译：发光体被密封在基板和密封体之间的发光装置的制造方法包括在基板的表面上形成由发光材料构成的发光层; 形成部分地覆盖发光层的密封体; 并且使用密封体作为掩模去除未被密封体覆盖的发光层的部分，由此形成发光体。

9. 发明授权

US07796101B2 Electroluminescent device, method for manufacturing electroluminescent device, and electronic apparatus 有权
标题翻译：电致发光器件，电致发光器件的制造方法和电子设备
公开(公告)号：US07796101B2
公开(公告)日：2010-09-14
申请号：US11668129
申请日：2007-01-29
申请人： Takahiro Iwashita , Hideto Ishiguro
发明人： Takahiro Iwashita , Hideto Ishiguro
IPC分类号： G09G3/30
CPC分类号： H01L27/3244 , H01L51/5218 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5265 , H01L51/5271 , H01L2251/5315
摘要： An electroluminescent device includes a substrate; a light-emitting region including a plurality of sub-pixels including switching elements, portions of an organic planarization layer for covering irregularities caused by the switching elements, reflective layers arranged on the organic planarization layer, protective layers extending over the respective reflective layers, light-transmissive first electrode layers which lie on the respective protective layers and which are electrically connected to the switching elements, portions of an organic light-emitting layer lying over the first electrode layers, and portions of a second electrode layer lying on the organic light-emitting layer; and a non-light-emitting region located outside the light-emitting region. The light-emitting region and the non-light-emitting region are arranged on the substrate. The organic planarization layer extends from the light-emitting region to the non-light-emitting region and has an upper portion which is located in the non-light-emitting region and which is exposed from the protective layers.
摘要翻译：电致发光器件包括：衬底; 包括多个子像素的发光区域，包括开关元件，用于覆盖由开关元件引起的凹凸的有机平坦化层的部分，布置在有机平坦化层上的反射层，在各个反射层上延伸的保护层，光位于各个保护层上并且与开关元件电连接的位于第一电极层上的有机发光层的部分和位于有机发光层上的第二电极层的部分的透射性第一电极层，发光层; 以及位于发光区域外的非发光区域。发光区域和非发光区域布置在基板上。有机平面化层从发光区域延伸到非发光区域，并且具有位于非发光区域中并从保护层露出的上部。

10. 发明授权

US07666726B2 Semiconductor element, semiconductor device, and method of manufacturing the same 失效
标题翻译：半导体元件，半导体器件及其制造方法
公开(公告)号：US07666726B2
公开(公告)日：2010-02-23
申请号：US11690461
申请日：2007-03-23
申请人： Sumio Utsunomiya , Hideto Ishiguro
发明人： Sumio Utsunomiya , Hideto Ishiguro
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/66772 , H01L29/78603 , H01L29/78654 , H01L29/78675
摘要： A method of manufacturing a semiconductor element includes: (a) preparing a first substrate provided with a plurality of protruding sections formed on a surface of the first substrate and a second substrate provided with a semiconductor film formed on a surface of the second substrate; and (b) executing a heat treatment on the semiconductor film while the plurality of protruding sections and the semiconductor film are in contact with each other.
摘要翻译：制造半导体元件的方法包括：（a）制备设置有形成在第一基板的表面上的多个突出部分的第一基板和设置有形成在第二基板的表面上的半导体膜的第二基板; 和（b）在所述多个突出部和所述半导体膜彼此接触的同时对所述半导体膜进行热处理。

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