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1. 发明授权

US08436791B2 Light-emitting device and mobility compensating method for driving the same, and electronic device 有权
标题翻译：用于驱动它们的发光装置和移动性补偿方法以及电子装置
公开(公告)号：US08436791B2
公开(公告)日：2013-05-07
申请号：US12690267
申请日：2010-01-20
申请人： Hitoshi Ota , Satoshi Yatabe , Hideto Ishiguro
发明人： Hitoshi Ota , Satoshi Yatabe , Hideto Ishiguro
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0256 , G09G2320/043
摘要： A light-emitting device includes a light-emitting element that emits light of an amount based on the size of a driving current; a driving transistor, the gate thereof being electrically connected to a first node, that outputs a current flowing between the drain-source as the driving current; and a control unit that supplies a first data potential to the first node and supplies a current to the driving transistor so as to set the voltage between the gate and source of the driving transistor to a compensated voltage based on the mobility of the driving transistor, and then supplies a second data potential determined in accordance with the first data potential to the first node.
摘要翻译：发光装置包括基于驱动电流的大小发光量的发光元件; 驱动晶体管，其栅极电连接到第一节点，其输出在所述漏源之间流动的电流作为所述驱动电流; 以及控制单元，其向第一节点提供第一数据电位，并且向驱动晶体管提供电流，以便基于驱动晶体管的迁移率将驱动晶体管的栅极和源极之间的电压设置为补偿电压，然后将根据第一数据电位确定的第二数据电位提供给第一节点。

2. 发明授权

US06306693B1 Method of manufacturing semiconductor device, method of manufacturing active matrix substrate, and electrooptic device 有权
标题翻译：制造半导体器件的方法，制造有源矩阵衬底的方法和电光器件
公开(公告)号：US06306693B1
公开(公告)日：2001-10-23
申请号：US09657901
申请日：2000-09-08
申请人： Hideto Ishiguro , Minoru Matsuo , Hiroyuki Murai , Masami Hayashi
发明人： Hideto Ishiguro , Minoru Matsuo , Hiroyuki Murai , Masami Hayashi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.
摘要翻译：为了提供一种制造半导体器件的方法，制造有源矩阵衬底的方法和电光器件，其中在同一衬底上形成不同类型的TFT时，TFT的LDD长度或偏移长度的变化可以通过少数步骤。在制造有源矩阵基板的方法中，留下用于形成栅电极15和25的图形掩模554，用于引入中等浓度的磷离子以引入与图案化掩模554自对准的杂质。接下来，去除图案化掩模554，通过使用栅电极15和25作为掩模来引入低浓度的磷离子，以形成与栅电极15自对准的低浓度源极 - 漏极区域111,121,211和221，以及每个区域的LDD长度等于在图案化栅电极15和25时引起的侧蚀刻量。

3. 发明授权

US08643576B2 Pixel circuit driving method, light emitting device, and electronic apparatus 有权
标题翻译：像素电路驱动方法，发光装置和电子设备
公开(公告)号：US08643576B2
公开(公告)日：2014-02-04
申请号：US12534524
申请日：2009-08-03
申请人： Hideto Ishiguro , Satoshi Yatabe
发明人： Hideto Ishiguro , Satoshi Yatabe
IPC分类号： G09G3/34
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0866 , G09G2310/0297
摘要： A method of driving a plurality of pixel circuits. The pixel circuits are disposed corresponding to intersections between a plurality of scanning lines and a plurality of signal lines. Each of the pixel circuits includes: a light emitting element; a driving transistor; a holding capacitor; and a selection switch electrically interconnecting the signal line and the gate of the driving transistor at the time of the selection of the scanning line. The method includes: supplying a gradation potential to each signal line during a first period, selecting the scanning line during a second period, and supplying the gradation potential to the gate of the driving transistor; controlling the driving transistor of each of the pixel circuits to be in an ON state, supplying a reference potential to the gate of the corresponding driving transistor, and executing a first compensation operation and supplying driving current to the light emitting element.
摘要翻译：一种驱动多个像素电路的方法。像素电路对应于多条扫描线和多条信号线之间的交叉点设置。每个像素电路包括：发光元件; 一个驱动晶体管; 保持电容器; 以及在选择扫描线时将信号线与驱动晶体管的栅极电连接的选择开关。该方法包括：在第一周期期间向各信号线提供灰度电位，在第二周期期间选择扫描线，并将灰度电位提供给驱动晶体管的栅极; 控制每个像素电路的驱动晶体管处于导通状态，向对应的驱动晶体管的栅极提供参考电位，并执行第一补偿操作，并向发光元件提供驱动电流。

4. 发明授权

US07982389B2 Light-emitting device incorporating an inorganic insulating layer between a reflective layer and corresponding pixel electrode 有权
标题翻译：在反射层和相应的像素电极之间结合有无机绝缘层的发光装置
公开(公告)号：US07982389B2
公开(公告)日：2011-07-19
申请号：US12379034
申请日：2009-02-11
申请人： Hideto Ishiguro
发明人： Hideto Ishiguro
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3258 , H01L27/3206 , H01L27/3246 , H01L27/3248 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/5265 , H01L51/5271 , H01L2227/323 , H01L2251/5315
摘要： A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers arranged on a face of the organic insulating layer, an inorganic insulating layer extending over the reflective layers, pixel electrodes arranged on the inorganic insulating layer, and light-emitting sections arranged on the respective pixel electrodes. The inorganic insulating layer has openings and regions in which no pixel electrodes are arranged when viewed from above. The openings extend through the respective regions to the organic insulating layer. A method for manufacturing such a light-emitting device includes forming openings in regions of the inorganic insulating layer in advance of the formation of the light-emitting sections such that the openings extend through the regions to the organic insulating layer, the regions having no pixel electrodes thereon when viewed from above.
摘要翻译：发光装置包括位于基板表面上的有机绝缘层，布置在有机绝缘层的表面上的反射层，在反射层上延伸的无机绝缘层，布置在无机绝缘层上的像素电极，以及配置在各像素电极上的发光部。无机绝缘层具有从上方观察不设置像素电极的开口部和区域。开口延伸穿过相应的区域到有机绝缘层。制造这种发光装置的方法包括在形成发光部分之前在无机绝缘层的区域中形成开口，使得开口延伸穿过该区域到有机绝缘层，不具有像素的区域从上方观察时的电极。

5. 发明授权

US07943935B2 Semiconductor device, method for manufacturing semiconductor device, and electro-optical apparatus 有权
标题翻译：半导体装置，半导体装置的制造方法以及电光装置
公开(公告)号：US07943935B2
公开(公告)日：2011-05-17
申请号：US11877350
申请日：2007-10-23
申请人： Hideto Ishiguro
发明人： Hideto Ishiguro
IPC分类号： H01L29/04 , H01L21/04 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78612 , H01L29/78621 , H01L29/78645
摘要： A semiconductor device includes a thin-film transistor including a polycrystalline silicon layer, disposed above a substrates serving as an active layer. The thin-film transistor includes a first thin-film transistor section including a first channel region disposed in a drain-side portion of the polycrystalline silicon layer and also includes a second thin-film transistor section including a second channel region that is adjacent to the first channel region with an impurity-implanted region disposed therebetween. The first and second thin-film transistor sections are of the same conductivity type. The gate electrode of the first thin-film transistor section is electrically connected to the gate electrode of the second thin-film transistor section. The first thin-film transistor section has a channel length of less than 2 μm.
摘要翻译：半导体器件包括设置在用作有源层的衬底之上的多晶硅层的薄膜晶体管。薄膜晶体管包括第一薄膜晶体管部分，其包括设置在多晶硅层的漏极侧部分中的第一沟道区域，并且还包括第二薄膜晶体管部分，其包括与第二沟道区域相邻的第二沟道区域第一沟道区，其间配置有杂质注入区。第一和第二薄膜晶体管部分具有相同的导电类型。第一薄膜晶体管部分的栅电极电连接到第二薄膜晶体管部分的栅电极。第一薄膜晶体管部分的沟道长度小于2μm。

6. 发明申请

US20100328278A1 Light Emitting Device, Electronic Device, and Method for Driving Pixel Circuit 审中-公开
标题翻译：发光装置，电子装置和驱动像素电路的方法
公开(公告)号：US20100328278A1
公开(公告)日：2010-12-30
申请号：US12821839
申请日：2010-06-23
申请人： Hideto Ishiguro , Satoshi Yatabe
发明人： Hideto Ishiguro , Satoshi Yatabe
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G2300/043 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251
摘要： A light emitting device includes: a pixel circuit; and a driving circuit that drives the pixel circuit, wherein the pixel circuit includes: a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is located between a gate of the driving transistor and a source of the driving transistor; and a selecting transistor that is located between the gate of the driving transistor and a signal line that corresponds to the pixel circuit, after a writing period starts, the driving circuit sets a potential of a selection signal to a selection potential to turn on the selecting transistor and outputs a data potential to the signal line to cause a current corresponding to the data potential to flow in the driving transistor, the selection signal being to be supplied to the gate of the selecting transistor, the data potential being changed over time, and after the driving circuit sets the potential of the selection signal to the selection potential and outputs the data potential, the driving circuit changes, from the selection potential, the potential of the selection signal over time until the end time of the writing period to turn off the selecting transistor and thereby stop supply of the data potential and sets, to a rate corresponding to a gradation specified for the pixel circuit, a rate of change of the data potential at the time when the supply of the data potential to the driving transistor is stopped.
摘要翻译：发光器件包括：像素电路; 以及驱动所述像素电路的驱动电路，其中所述像素电路包括：发光元件; 与发光元件串联连接的驱动晶体管; 存储电容器，位于所述驱动晶体管的栅极和所述驱动晶体管的源极之间; 以及位于驱动晶体管的栅极与对应于像素电路的信号线之间的选择晶体管，在写入周期开始之后，驱动电路将选择信号的电位设置为选择电位，以接通选择晶体管，并向信号线输出数据电位，使与数据电位对应的电流流入驱动晶体管，选择信号被提供给选择晶体管的栅极，数据电位随时间变化，以及在驱动电路将选择信号的电位设置为选择电位并输出数据电位之后，驱动电路从选择电位改变选择信号的电位随时间变化直到写入周期的结束时间关闭选择晶体管，从而停止提供数据电位，并将其设置为与为像素循环指定的灰度相对应的速率在停止提供驱动晶体管的数据电位时的数据电位的变化率。

7. 发明申请

US20070053202A1 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置及制造发光装置的方法
公开(公告)号：US20070053202A1
公开(公告)日：2007-03-08
申请号：US11466668
申请日：2006-08-23
申请人： Hiroshi Sera , Hideto Ishiguro
发明人： Hiroshi Sera , Hideto Ishiguro
IPC分类号： F21V5/00
CPC分类号： H01L51/524 , H01L27/3276 , H01L27/3288 , H01L51/0017 , H01L51/5203 , H01L51/5231
摘要： A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.
摘要翻译：发光体被密封在基板和密封体之间的发光装置的制造方法包括在基板的表面上形成由发光材料构成的发光层; 形成部分地覆盖发光层的密封体; 并且使用密封体作为掩模去除未被密封体覆盖的发光层的部分，由此形成发光体。

8. 发明授权

US6146928A Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method 失效
标题翻译：通过该方法制造薄膜晶体管，液晶显示器和电子器件的制造方法
公开(公告)号：US6146928A
公开(公告)日：2000-11-14
申请号：US11512
申请日：1998-02-04
申请人： Hideto Ishiguro , Takashi Nakazawa
发明人： Hideto Ishiguro , Takashi Nakazawa
IPC分类号： G02F1/1362 , H01L21/314 , H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/8249
CPC分类号： H01L29/66757 , H01L29/458 , H01L29/4908 , G02F1/13454
摘要： A method for making a highly reliable non-single-crystal silicon thin film transistor, in which an underlying SiO.sub.2 film 15 is formed on a glass substrate 14 and then a polycrystalline silicon layer 17 is formed thereon. After patterning the polycrystalline silicon layer 17, a gate SiO.sub.2 film 18 is formed by an ECR-PECVD process or a TEOS-PECVD process. A gate electrode 19 is formed and source and drain regions 20, 20 are formed by an ion doping process. After forming a SiO.sub.2 insulating interlevel film 21 and providing a contact hole 22, an electrode 23 composed of an Al--Si--Cu film is formed. Finally, it is subjected to wet annealing at a temperature of 350.degree. C. for 3 hours.
摘要翻译： PCT No.PCT / JP97 / 01891 Sec。 371日期：1998年2月4日 102（e）日期1998年2月4日PCT提交1997年6月4日PCT公布。公开号WO97 / 47046 日期1997年12月11日制造高可靠性的非单晶硅薄膜晶体管的方法，其中在玻璃基板14上形成下面的SiO 2膜15，然后在其上形成多晶硅层17。在图案化多晶硅层17之后，通过ECR-PECVD工艺或TEOS-PECVD工艺形成栅极SiO 2膜18。形成栅电极19，并通过离子掺杂工艺形成源极和漏极区20,20。在形成SiO 2绝缘层间膜21并提供接触孔22之后，形成由Al-Si-Cu膜构成的电极23。最后，在350℃的温度下进行湿式退火3小时。

9. 发明授权

US5614730A Active matrix substrate 失效
标题翻译：有源矩阵基板
公开(公告)号：US5614730A
公开(公告)日：1997-03-25
申请号：US790253
申请日：1991-11-08
申请人： Takashi Nakazawa , Hideto Ishiguro
发明人： Takashi Nakazawa , Hideto Ishiguro
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/01 , H01L31/036
CPC分类号： G02F1/1362 , H01L27/12 , G02F1/136213 , G02F2202/104
摘要： There is disclosed an active matrix substrate including on a given substrate a thin film transistor, a scanning line connected to the gate of the thin film transistor, a data bus connected to the source of the thin film transistor, and a picture element electrode connected to the data bus through the thin film transistor, the active matrix substrate comprising a structure of the scanning line having the surface covered with an insulating film. A semiconductor layer covered with a gate insulating film constituting the thin film transistor, and a gate electrode constituting the thin film transistor, which are laid on each other in the stated order.
摘要翻译：公开了一种有源矩阵基板，包括在给定基板上的薄膜晶体管，连接到薄膜晶体管的栅极的扫描线，连接到薄膜晶体管的源极的数据总线和连接到薄膜晶体管的像素电极所述数据总线通过所述薄膜晶体管，所述有源矩阵基板包括具有被绝缘膜覆盖的所述表面的所述扫描线的结构。由构成薄膜晶体管的栅极绝缘膜覆盖的半导体层和构成薄膜晶体管的栅电极按照所述顺序相互放置。

10. 发明授权

US08599222B2 Method of driving pixel circuit, light emitting device, and electronic apparatus 有权
标题翻译：驱动像素电路，发光器件和电子设备的方法
公开(公告)号：US08599222B2
公开(公告)日：2013-12-03
申请号：US12544563
申请日：2009-08-20
申请人： Hideto Ishiguro , Satoshi Yatabe
发明人： Hideto Ishiguro , Satoshi Yatabe
IPC分类号： G09G5/10
CPC分类号： G09G3/30 , G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0866 , G09G2310/0262 , G09G2320/043 , G09G2320/045
摘要： There is provided a method of driving a pixel circuit that includes a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is interposed between a path, which is formed between the light emitting element and the driving transistor, and a gate of the driving transistor; a selection switch that is interposed between the gate of the driving transistor and a signal line; and a first control switch that is interposed between the gate of the driving transistor and the signal line and is connected to the selection switch in series.
摘要翻译：提供了一种驱动包括发光元件的像素电路的方法; 与发光元件串联连接的驱动晶体管; 存储电容器，其设置在形成在所述发光元件和所述驱动晶体管之间的路径与所述驱动晶体管的栅极之间; 插入驱动晶体管的栅极和信号线之间的选择开关; 以及插入在驱动晶体管的栅极和信号线之间并串联连接到选择开关的第一控制开关。

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