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    • 2. 发明申请
    • COMPASS SENSOR UNIT AND PORTABLE ELECTRONIC DEVICE
    • COMPASS传感器单元和便携式电子设备
    • US20080091372A1
    • 2008-04-17
    • US11948921
    • 2007-11-30
    • Hideki SatoYukio WakuiMasayoshi Omura
    • Hideki SatoYukio WakuiMasayoshi Omura
    • G01C17/38
    • G01C17/38
    • In a compass sensor unit, an azimuth data computing method is carried out by the steps of: inputting a signal from a geomagnetic sensor to measure magnetic field; determining whether to store measurement data of the magnetic field based on a distance from the last stored measurement data; calculating an offset value based on the stored data; making a comparison for each component of a plurality of measurement data used for calculating the offset value, and judging the offset value to be valid when a difference between the maximum and minimum values of each component is a given value or more; updating the already stored offset value to the offset value judged to be valid; and correcting newly provided measurement data by the updated offset value to compute azimuth data.
    • 在罗盘传感器单元中,通过以下步骤执行方位数据计算方法:输入来自地磁传感器的信号以测量磁场; 基于距离最后存储的测量数据的距离确定是否存储磁场的测量数据; 基于所存储的数据计算偏移值; 对用于计算偏移值的多个测量数据的每个分量进行比较,并且当每个分量的最大值和最小值之间的差是给定值或更大时,判断偏移值是有效的; 将已经存储的偏移值更新为判断为有效的偏移值; 并通过更新的偏移值对新提供的测量数据进行校正,以计算方位数据。
    • 3. 发明申请
    • COMPASS SENSOR UNIT AND PORTABLE ELECTRONIC DEVICE
    • COMPASS传感器单元和便携式电子设备
    • US20090006020A1
    • 2009-01-01
    • US12206521
    • 2008-09-08
    • HIDEKI SATOYukio WakuiMasayoshi Omura
    • HIDEKI SATOYukio WakuiMasayoshi Omura
    • G01C17/38
    • G01C17/38
    • In a compass sensor unit, an azimuth data computing method is carried out by the steps of: inputting a signal from a geomagnetic sensor to measure magnetic field; determining whether to store measurement data of the magnetic field based on a distance from the last stored measurement data; calculating an offset value based on the stored data; making a comparison for each component of a plurality of measurement data used for calculating the offset value, and judging the offset value to be valid when a difference between the maximum and minimum values of each component is a given value or more; updating the already stored offset value to the offset value judged to be valid; and correcting newly provided measurement data by the updated offset value to compute azimuth data.
    • 在罗盘传感器单元中,通过以下步骤执行方位数据计算方法:输入来自地磁传感器的信号以测量磁场; 基于距离最后存储的测量数据的距离确定是否存储磁场的测量数据; 基于所存储的数据计算偏移值; 对用于计算偏移值的多个测量数据的每个分量进行比较,并且当每个分量的最大值和最小值之间的差是给定值或更大时,判断偏移值是有效的; 将已经存储的偏移值更新为判断为有效的偏移值; 并通过更新的偏移值对新提供的测量数据进行校正,以计算方位数据。
    • 5. 发明授权
    • Magnetic sensor and manufacturing method therefor
    • 磁传感器及其制造方法
    • US08178361B2
    • 2012-05-15
    • US10584666
    • 2006-03-15
    • Hiroshi NaitoHideki SatoYukio WakuiMasayoshi Omura
    • Hiroshi NaitoHideki SatoYukio WakuiMasayoshi Omura
    • H01L21/00G01R33/09
    • H01L27/22B82Y25/00G01R33/09G01R33/093H01L43/12Y10T29/4902Y10T29/49075
    • There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
    • 提供了一种用于检测三个轴向上的磁场强度的小型磁传感器,其中在单个半导体衬底上形成多个巨磁电阻元件。 在半导体衬底上形成厚膜; 在其平面上形成形成X轴传感器和Y轴传感器的巨磁阻元件; 并且使用形成在厚膜中的通道的斜面形成形成Z轴传感器的巨磁阻元件。 关于通道形成,可以使用反应离子蚀刻和高密度等离子体CVD方法。 此外,在厚膜和钝化膜之间形成绝缘膜,并用作蚀刻停止层。 通道的每个斜面可以由第一斜面和第二斜面构成,使得在具有较大倾斜角的第二斜面上形成磁敏元件。 为了优化相对于每个通道的斜率形状和倾斜度,可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。
    • 6. 发明授权
    • Compass sensor unit and portable electronic device
    • 指南针传感器单元和便携式电子设备
    • US07606676B2
    • 2009-10-20
    • US12206521
    • 2008-09-08
    • Hideki SatoYukio WakuiMasayoshi Omura
    • Hideki SatoYukio WakuiMasayoshi Omura
    • G01D18/00G06F19/00
    • G01C17/38
    • In a compass sensor unit, an azimuth data computing method is carried out by the steps of: inputting a signal from a geomagnetic sensor to measure magnetic field; determining whether to store measurement data of the magnetic field based on a distance from the last stored measurement data; calculating an offset value based on the stored data; making a comparison for each component of a plurality of measurement data used for calculating the offset value, and judging the offset value to be valid when a difference between the maximum and minimum values of each component is a given value or more; updating the already stored offset value to the offset value judged to be valid; and correcting newly provided measurement data by the updated offset value to compute azimuth data.
    • 在罗盘传感器单元中,通过以下步骤执行方位数据计算方法:输入来自地磁传感器的信号以测量磁场; 基于距离最后存储的测量数据的距离确定是否存储磁场的测量数据; 基于所存储的数据计算偏移值; 对用于计算偏移值的多个测量数据的每个分量进行比较,并且当每个分量的最大值和最小值之间的差是给定值或更大时,判断偏移值是有效的; 将已经存储的偏移值更新为判断为有效的偏移值; 并通过更新的偏移值对新提供的测量数据进行校正,以计算方位数据。
    • 7. 发明申请
    • Three-Axis Magnetic Sensor and Method for Manufacturing the Same
    • 三轴磁传感器及其制造方法
    • US20090027048A1
    • 2009-01-29
    • US11908549
    • 2006-03-17
    • Hideki SatoMasayoshi OmuraHiroshi NaitoToshiyuki OohashiYukio WakuiChihiro Osuga
    • Hideki SatoMasayoshi OmuraHiroshi NaitoToshiyuki OohashiYukio WakuiChihiro Osuga
    • G01R33/09G01R3/00
    • H01L27/22B82Y25/00G01R33/09G01R33/093Y10T29/49002Y10T29/4902
    • In the three-axis magnetic sensor of the present invention, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets to constitute magnetoresistive effect elements, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed on a flat surface parallel to the flat surface of the substrate. The sensitivity direction of magnetization is a direction vertical to the longitudinal direction of each of the magnetoresistive effect element bars, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed in such a way that the magnetization directions are orthogonal to each other. Further, magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface of the projection projected from the flat surface of the substrate in such a way that the magnetization direction is inside the tilted surface. The Z-axis sensor is provided in such a way that the sensitivity direction is vertical to the longitudinal direction of the magnetoresistive effect element bar.
    • 在本发明的三轴磁传感器中,多个磁阻效应元件棒通过偏置磁铁串联连接,构成磁阻效应元件,X轴传感器和Y轴传感器的磁阻效应元件, 轴传感器形成在平行于基板的平坦表面的平坦表面上。 磁化的灵敏度方向是垂直于每个磁阻效应元件棒的纵向的方向,并且X轴传感器和Y轴传感器的磁阻效应元件以这样的方式形成,使得磁化方向 彼此正交。 此外,Z轴传感器的磁阻效应元件形成在从基板的平坦表面突出的突起的倾斜表面上,使得磁化方向在倾斜表面内。 Z轴传感器以灵敏度方向垂直于磁阻效应元件棒的纵向的方式设置。
    • 10. 发明申请
    • Magnetic Sensor and Manufacturing Method Therefor
    • 磁传感器及其制造方法
    • US20080169807A1
    • 2008-07-17
    • US10584666
    • 2006-03-15
    • Hiroshi NaitoHideki SatoYukio WakuiMasayoshi Omura
    • Hiroshi NaitoHideki SatoYukio WakuiMasayoshi Omura
    • G01R33/02H01F7/06
    • H01L27/22B82Y25/00G01R33/09G01R33/093H01L43/12Y10T29/4902Y10T29/49075
    • There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
    • 提供了一种用于检测三个轴向上的磁场强度的小型磁传感器,其中在单个半导体衬底上形成多个巨磁电阻元件。 在半导体衬底上形成厚膜; 在其平面上形成形成X轴传感器和Y轴传感器的巨磁阻元件; 并且使用形成在厚膜中的通道的斜面形成形成Z轴传感器的巨磁阻元件。 关于通道形成,可以使用反应离子蚀刻和高密度等离子体CVD方法。 此外,在厚膜和钝化膜之间形成绝缘膜,并用作蚀刻停止层。 通道的每个斜面可以由第一斜面和第二斜面构成,使得在具有较大倾斜角的第二斜面上形成磁敏元件。 为了优化相对于每个通道的斜率形状和倾斜度,可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。