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1. 发明授权

US07795694B2 Quantum device, manufacturing method of the same and controlling method of the same 有权
标题翻译：量子器件及其制造方法及其控制方法
公开(公告)号：US07795694B2
公开(公告)日：2010-09-14
申请号：US12292235
申请日：2008-11-14
申请人： Haizhi Song , Tatsuya Usuki
发明人： Haizhi Song , Tatsuya Usuki
IPC分类号： H01L21/00
CPC分类号： H01L29/66977 , G01Q80/00 , H01L29/127 , Y10S438/962 , Y10S977/938
摘要： By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.
摘要翻译：通过使AFM的尖端与GaAs衬底或AlGaAs衬底的表面接触，例如向尖端施加负偏压，并向GaAs衬底或AlGaAs衬底施加正偏压，形成环形形成氧化膜。然后，除去氧化膜。结果，在GaAs衬底或AlGaAs衬底的表面中形成环形沟槽。可以通过化学蚀刻，用水进行超声波清洗，在真空中用原子氢处理等除去氧化膜。此后，在槽内外延生长半导体膜（InAs膜或InGaAs膜）。然后，形成覆盖半导体膜和GaAs衬底或AlGaAs衬底的覆盖层。

2. 发明申请

US20090078930A1 Quantum device, manufacturing method of the same and controlling method of the same 有权
标题翻译：量子器件及其制造方法及其控制方法
公开(公告)号：US20090078930A1
公开(公告)日：2009-03-26
申请号：US12292235
申请日：2008-11-14
申请人： Haizhi Song , Tatsuya Usuki
发明人： Haizhi Song , Tatsuya Usuki
IPC分类号： H01L29/12
CPC分类号： H01L29/66977 , G01Q80/00 , H01L29/127 , Y10S438/962 , Y10S977/938
摘要： By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.
摘要翻译：通过使AFM的尖端与GaAs衬底或AlGaAs衬底的表面接触，例如向尖端施加负偏压，并向GaAs衬底或AlGaAs衬底施加正偏压，形成环形形成氧化膜。然后，除去氧化膜。结果，在GaAs衬底或AlGaAs衬底的表面中形成环形沟槽。可以通过化学蚀刻，用水进行超声波清洗，在真空中用原子氢处理等除去氧化膜。此后，在槽内外延生长半导体膜（InAs膜或InGaAs膜）。然后，形成覆盖半导体膜和GaAs衬底或AlGaAs衬底的覆盖层。

3. 发明授权

US07465595B2 Quantum device, manufacturing method of the same and controlling method of the same 有权
标题翻译：量子器件及其制造方法及其控制方法
公开(公告)号：US07465595B2
公开(公告)日：2008-12-16
申请号：US11064497
申请日：2005-02-24
申请人： Haizhi Song , Tatsuya Usuki
发明人： Haizhi Song , Tatsuya Usuki
IPC分类号： H01L21/00
CPC分类号： H01L29/66977 , G01Q80/00 , H01L29/127 , Y10S438/962 , Y10S977/938
摘要： By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.
摘要翻译：通过使AFM的尖端与GaAs衬底或AlGaAs衬底的表面接触，例如向尖端施加负偏压，并向GaAs衬底或AlGaAs衬底施加正偏压，形成环形形成氧化膜。然后，除去氧化膜。结果，在GaAs衬底或AlGaAs衬底的表面中形成环形沟槽。可以通过化学蚀刻，用水进行超声波清洗，在真空中用原子氢处理等除去氧化膜。此后，在槽内外延生长半导体膜（InAs膜或InGaAs膜）。然后，形成覆盖半导体膜和GaAs衬底或AlGaAs衬底的覆盖层。

4. 发明申请

US20060099825A1 Quantum device, manufacturing method of the same and controlling method of the same 有权
公开(公告)号：US20060099825A1
公开(公告)日：2006-05-11
申请号：US11064497
申请日：2005-02-24
申请人： Haizhi Song , Tatsuya Usuki
发明人： Haizhi Song , Tatsuya Usuki
IPC分类号： H01L21/31 , H01L21/20 , H01L21/00
CPC分类号： H01L29/66977 , G01Q80/00 , H01L29/127 , Y10S438/962 , Y10S977/938
摘要： By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.

5. 发明申请

US20080012003A1 Quantum device, control method thereof and manufacturing method thereof 有权
标题翻译：量子装置及其控制方法及其制造方法
公开(公告)号：US20080012003A1
公开(公告)日：2008-01-17
申请号：US11898116
申请日：2007-09-10
申请人： Haizhi Song
发明人： Haizhi Song
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/205 , H01L33/06 , Y10S438/962 , Y10S977/773 , Y10S977/774 , Y10S977/933 , Y10S977/937
摘要： A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is formed on the barrier layer (28). Then, a cap layer (34) covering the quantum dot (30) and the like is formed.
摘要翻译：在GaAs衬底（20）上形成量子点（22）。在量子点（22）中，存在单个电子。在量子点（22）的周围区域上形成有盖层（26），在其上形成阻挡层（28）。用于检测的量子点（30）形成在阻挡层（28）上。然后，形成覆盖量子点（30）的盖层（34）等。

6. 发明授权

US07880162B2 Quantum device, control method thereof and manufacturing method thereof 有权
标题翻译：量子装置及其控制方法及其制造方法
公开(公告)号：US07880162B2
公开(公告)日：2011-02-01
申请号：US11898116
申请日：2007-09-10
申请人： Haizhi Song
发明人： Haizhi Song
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/205 , H01L33/06 , Y10S438/962 , Y10S977/773 , Y10S977/774 , Y10S977/933 , Y10S977/937
摘要： A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is formed on the barrier layer (28). Then, a cap layer (34) covering the quantum dot (30) and the like is formed.
摘要翻译：在GaAs衬底（20）上形成量子点（22）。在量子点（22）中，存在单个电子。在量子点（22）的周围区域上形成有盖层（26），在其上形成阻挡层（28）。用于检测的量子点（30）形成在阻挡层（28）上。然后，形成覆盖量子点（30）的盖层（34）等。

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