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1. 发明申请

US20090301542A1 INFRARED ABSORBER AND THERMAL INFRARED DETECTOR 有权
标题翻译：红外吸收和热红外探测器
公开(公告)号：US20090301542A1
公开(公告)日：2009-12-10
申请号：US12161868
申请日：2007-01-24
申请人： Fumikazu Ojima , Jun Suzuki , Ryusuke Kitaura
发明人： Fumikazu Ojima , Jun Suzuki , Ryusuke Kitaura
IPC分类号： H01L35/02
CPC分类号： H01L27/14669 , G01J5/04 , G01J5/046 , G01J5/08 , G01J5/0853 , G01J5/12
摘要： The infrared ray absorbing film 2 is provided with a first layer 21 containing TiN and a second layer 22 containing an Si based compound, converting energy of infrared ray made incident from the second layer 22 to heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 μm, while high in reflection rate of infrared ray over a wavelength range longer than 8 μm. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.
摘要翻译：红外线吸收膜2设置有含有TiN的第一层21和含有Si基化合物的第二层22，将从第二层22入射的红外线的能量转换成热。 TiN在短于8μm的波长范围内的红外线吸收率高，而在超过8μm的波长范围内红外线的反射率高。因此，如果在TiN层上层叠具有较长波长范围的红外线吸收率优异的Si系化合物层，则能够有利地吸收在TiN层上的吸收率下降的波长范围内的红外线，试图透过Si基化合物层的红外线，也可以在TiN层的边界面上反射回Si基化合物层。

2. 发明申请

US20110024855A1 PHOTODETECTOR 有权
标题翻译：照相机
公开(公告)号：US20110024855A1
公开(公告)日：2011-02-03
申请号：US12922805
申请日：2009-03-16
申请人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
发明人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
IPC分类号： H01L31/02
CPC分类号： H01L27/1446 , G01J5/20 , H01L27/14669 , H01L37/00
摘要： An infrared detector (1) having a bolometer element (11) and a reference element (21) is provided with a bolometer thin film (22) supported on a surface of a substrate (10) while spaced apart from the surface of the substrate (10), a metal film (23) for heat dissipation formed on the substrate (10)-side surface of the bolometer thin film (22) through an insulating film (31), and a plurality of metal columns (25) connected thermally with the metal film (23) for heat dissipation and the substrate (10). Since heat generated from a light receiving portion (22a) by infrared rays is dissipated efficiently to the substrate (10) through the insulating film (31), the metal film (23) for heat dissipation, the metal columns (25), and a metal film (24) for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment efficiently.
摘要翻译：具有测辐射热计元件（11）和参考元件（21）的红外检测器（1）设置有与基板表面间隔开的支撑在基板（10）的表面上的测辐射热计薄膜（22） 10），通过绝缘膜（31）形成在测辐射热计薄膜（22）的基板（10）侧表面上的用于散热的金属膜（23），以及多个金属柱（25），其与用于散热的金属膜（23）和基板（10）。由于通过红外线从光接收部分（22a）产生的热量通过绝缘膜（31）有效地散发到基板（10），所以用于散热的金属膜（23），金属柱（25）和在基板侧散热的金属膜（24），只能精确地测量由使用环境的变化引起的温度变化，能够有效地减小使用环境的温度变化的影响，从而实现小型化。

3. 发明授权

US08350350B2 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US08350350B2
公开(公告)日：2013-01-08
申请号：US13139599
申请日：2009-12-22
申请人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
发明人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
IPC分类号： H01L31/024
CPC分类号： G01J5/20 , G01J5/02 , G01J5/024 , G01J2005/068 , H01L27/14 , H01L27/14649
摘要： In an infrared sensor (1) having a bolometer element (11) and a reference element (21), the reference element (21) comprises a bolometer film (22), a substrate-side insulating film (31) formed on the substrate-side surface of the bolometer film (22), a heat dissipation film (23) made of amorphous silicon formed on the substrate-side surface of the bolometer film (22) with the substrate-side insulating film (31) interposed therebetween, and a plurality of heat dissipation columns (25) made of amorphous silicon thermally connected to the heat dissipation film (23) and a substrate (10), while the bolometer film (22) and substrate-side insulating film (31) are formed such as to extend over a side face of the heat dissipation film (23) intersecting a surface of the substrate (10). Thus configured infrared sensor (1) can efficiently reduce the influence of temperature changes in the environment in use, while being made smaller.
摘要翻译：在具有测辐射热计元件（11）和参考元件（21）的红外线传感器（1）中，参考元件（21）包括测辐射热计薄膜（22），形成在基板元件测辐射热计薄膜（22）的侧表面，形成在基准面膜绝缘膜（31）之间的测辐射热计薄膜（22）的基板侧表面上的由非晶硅制成的散热薄膜（23），以及热绝缘膜（23）与基板（10）热连接的多个由非晶硅制成的散热柱（25），而辐射热计薄膜（22）和基板侧绝缘膜（31）形成为在与基板（10）的表面相交的散热膜（23）的侧面上延伸。这样配置的红外线传感器（1）可以有效地减小使用环境中的温度变化的影响，同时使其变小。

4. 发明授权

US08692348B2 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US08692348B2
公开(公告)日：2014-04-08
申请号：US12922805
申请日：2009-03-16
申请人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
发明人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
IPC分类号： H01L31/058 , G01J5/00
CPC分类号： H01L27/1446 , G01J5/20 , H01L27/14669 , H01L37/00
摘要： An infrared detector 1 having a bolometer element 11 and a reference element 21 is provided with a bolometer thin film 22 supported on a surface of a substrate 10while spaced apart from the surface of the substrate 10, a metal film 23 for heat dissipation formed on a surface of the bolometer thin film 22 via an insulating film 31, wherein the surface of the bolometer thin film 22 faces the substrate 10, and a plurality of metal columns 25 connected thermally with the metal film 23 for heat dissipation and the substrate 10. Since heat generated from a photodetecting portion 22aby infrared rays is efficiently dissipated to the substrate 10 via the insulating film 31, the metal film 23 for heat dissipation, the metal columns 25, and a metal film 24 for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment.
摘要翻译：具有测辐射热计元件11和参考元件21的红外线检测器1设置有与基板10的表面间隔开的支撑在基板10的表面上的测辐射热计薄膜22，用于散热的金属膜23 测辐射热计薄膜22的表面，其中测辐射热计薄膜22的表面面向基板10，以及多个金属柱25与金属薄膜23热连接以进行散热，以及基板10.由于由光检测部22产生的热量经由绝缘膜31，散热用金属膜23，金属柱25和基板侧的散热用金属膜24，有效地向基板10散发红外线，可以精确地测量由使用环境变化引起的温度变化，并且可以在减少使用环境中的温度变化的影响的同时实现小型化的。

5. 发明授权

US08664510B2 Infrared absorber and thermal infrared detector 有权
标题翻译：红外线吸收器和热红外探测器
公开(公告)号：US08664510B2
公开(公告)日：2014-03-04
申请号：US12161868
申请日：2007-01-24
申请人： Fumikazu Ojima , Jun Suzuki , Ryusuke Kitaura
发明人： Fumikazu Ojima , Jun Suzuki , Ryusuke Kitaura
IPC分类号： H01L35/32
CPC分类号： H01L27/14669 , G01J5/04 , G01J5/046 , G01J5/08 , G01J5/0853 , G01J5/12
摘要： The infrared ray absorbing film 2 is provided with a first layer 21 containing TiN and a second layer 22 containing an Si based compound, converting energy of infrared ray made incident from the second layer 22 to heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 μm, while high in reflection rate of infrared ray over a wavelength range longer than 8 μm. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.
摘要翻译：红外线吸收膜2设置有含有TiN的第一层21和含有Si基化合物的第二层22，将从第二层22入射的红外线的能量转换成热。 TiN在短于8μm的波长范围内的红外线吸收率高，而在超过8μm的波长范围内红外线的反射率高。因此，如果在TiN层上层叠具有较长波长范围的红外线吸收率优异的Si系化合物层，则能够有利地吸收在TiN层上的吸收率下降的波长范围内的红外线，试图透过Si基化合物层的红外线，也可以在TiN层的边界面上反射回Si基化合物层。

6. 发明申请

US20110241154A1 OPTICAL SENSOR 有权
标题翻译：光传感器
公开(公告)号：US20110241154A1
公开(公告)日：2011-10-06
申请号：US13139599
申请日：2009-12-22
申请人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
发明人： Jun Suzuki , Fumikazu Ojima , Ryusuke Kitaura
IPC分类号： H01L31/024
CPC分类号： G01J5/20 , G01J5/02 , G01J5/024 , G01J2005/068 , H01L27/14 , H01L27/14649
摘要： In an infrared sensor (1) having a bolometer element (11) and a reference element (21), the reference element (21) comprises a bolometer film (22), a substrate-side insulating film (31) formed on the substrate-side surface of the bolometer film (22), a heat dissipation film (23) made of amorphous silicon formed on the substrate-side surface of the bolometer film (22) with the substrate-side insulating film (31) interposed therebetween, and a plurality of heat dissipation columns (25) made of amorphous silicon thermally connected to the heat dissipation film (23) and a substrate (10), while the bolometer film (22) and substrate-side insulating film (31) are formed such as to extend over a side face of the heat dissipation film (23) intersecting a surface of the substrate (10). Thus configured infrared sensor (1) can efficiently reduce the influence of temperature changes in the environment in use, while being made smaller.
摘要翻译：在具有测辐射热计元件（11）和参考元件（21）的红外线传感器（1）中，参考元件（21）包括测辐射热计薄膜（22），形成在基板元件测辐射热计薄膜（22）的侧表面，形成在基准面膜绝缘膜（31）之间的测辐射热计薄膜（22）的基板侧表面上的由非晶硅制成的散热薄膜（23），以及热绝缘膜（23）与基板（10）热连接的多个由非晶硅制成的散热柱（25），而辐射热计薄膜（22）和基板侧绝缘膜（31）形成为在与基板（10）的表面相交的散热膜（23）的侧面上延伸。这样配置的红外线传感器（1）可以有效地减小使用环境中的温度变化的影响，同时使其变小。

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